SDT12S60

Silicon Carbide Schottky Diode thinQ! SiC Schottky Diode

Worlds first 600V Schottky diode
Revolutionary semiconductor Product Summary

material - Silicon Carbide VRRM 600 V

Qc 30 nC
Switching behavior benchmark
IF 12 A
No reverse recovery
No temperature influence on PG-TO220-2-2.

the switching behavior

No forward recovery

Type Package Ordering Code Marking Pin 1 Pin 2

SDT12S60 PG-TO220-2-2. Q67040-S4470 D12S60 C A

Maximum Ratings, at Tj = 25 C, unless otherwise specified

Parameter Symbol Value Unit
Continuous forward current, TC=100C IF 12 A
RMS forward current, f=50Hz IFRMS 17
Surge non repetitive forward current, sine halfwave IFSM 36
TC=25C, tp=10ms

Repetitive peak forward current IFRM 49

Tj=150C, TC=100C, D=0.1

Non repetitive peak forward current IFMAX 120

tp=10s, TC=25C

i 2t value, TC=25C, tp=10ms i2dt 6.48 As

Repetitive peak reverse voltage VRRM 600 V
Surge peak reverse voltage VRSM 600
Power dissipation, TC=25C Ptot 88.2 W
Operating and storage temperature Tj , Tstg -55... +175 C

Rev. 2.3 Page 1 2008-06-03

http://www.Datasheet4U.com
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Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 1.7 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage VF V
IF=12A, Tj=25C - 1.5 1.7
IF=12A, Tj=150C - 1.7 2.1
Reverse current IR A
V R=600V, T j=25C - 40 400
V R=600V, T j=150C - 100 2000

Rev. 2.3 Page 2 2008-06-03

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Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Total capacitive charge Qc - 30 - nC
V R=400V, IF=12A, diF /dt=200A/s, Tj=150C
Switching time trr - n.a. - ns
V R=400V, IF=12A, diF /dt=200A/s, Tj=150C

Total capacitance C pF
V R=1V, T C=25C, f=1MHz - 450 -
V R=300V, T C=25C, f=1MHz - 45 -
V R=600V, T C=25C, f=1MHz - 43 -

Rev. 2.3 Page 3 2008-06-03

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1 Power dissipation 2 Diode forward current

Ptot = f (TC) IF = f (TC)
parameter: Tj175 C
90 24

W
A

20
70
18

60 16
Ptot

IF
14
50
12
40
10

30 8

6
20
4
10
2

0 0
0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 C 180
TC TC

3 Typ. forward characteristic 4 Typ. forward power dissipation vs.

IF = f (VF) average forward current
parameter: Tj , tp = 350 s PF(AV)=f(IF) TC=100C, d = tp/T
24 44
W
d=0.1
A
d=0.2
150C 36
d=0.5
125C d=1
100C 32
PF(AV)

16 25C
-40C 28
IF

24
12
20

16
8
12

4 8

0 0
0 0.5 1 1.5 V 2.5 0 2 4 6 8 10 12 A 16
VF IF(AV)

Rev. 2.3 Page 4 2008-06-03

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5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance

I R=f(VR) ZthJC = f (t p)
parameter : D = t p/T
2
10 10 1 SDT12S60

A K/W

150C
10 1 125C 10 0
100C
25C

ZthJC
IR

10 0 10 -1

D = 0.50
-1 -2
10 10 0.20
0.10
0.05
-2 -3 0.02
10 10 single pulse
0.01

10 -3 10 -4 -7 -6 -5 -4 -3 -2 0
100 150 200 250 300 350 400 450 500 V 600 10 10 10 10 10 10 s 10
VR tp

7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy

C= f(V R) EC=f(V R)
parameter: TC = 25 C, f = 1 MHz
600 9
pF J

500
7
450

400 6
EC
C

350
5
300
4
250

200 3

150
2
100
1
50

0 0 1 2 3 0
10 10 10 V 10 0 100 200 300 400 V 600
VR VR

Rev. 2.3 Page 5 2008-06-03

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9 Typ. capacitive charge vs. current slope

Q c=f(diF /dt)
parameter: Tj = 150 C
40

nC
IF *2
IF
32

28 IF *0.5
Qc

24

20

16

12

0
100 200 300 400 500 600 700 800A/s 1000
diF/dt

Rev. 2.3 Page 6 2008-06-03

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PG-TO-220-2-2

Rev. 2.3 Page 7 2008-06-03

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Rev. 2.3 Page 8 2008-06-03