PROFET BTS 432 E2

Smart Highside Power Switch

Features Product Summary
Load dump and reverse battery protection1) VLoad dump 80 V
Clamp of negative voltage at output Vbb-VOUT Avalanche Clamp 58 V
Short-circuit protection Vbb (operation) 4.5 ... 42 V
Current limitation
Vbb (reverse) -32 V
Thermal shutdown
Diagnostic feedback RON 38 m
Open load detection in ON-state IL(SCp) 44 A
CMOS compatible input IL(SCr) 35 A
Electrostatic discharge (ESD) protection IL(ISO) 11 A
Loss of ground and loss of Vbb protection2)
Overvoltage protection PG-TO220-5-11 PG-TO263-5-2
Undervoltage and overvoltage shutdown with auto-
restart and hysteresis 5
Green Product (RoHS compliant) 5
AEC qualified 1
Standard SMD

Application
C compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.

R bb + V bb
3
Voltage Overvoltage Current Gate
source protection limit protection
V Logic
OUT
Voltage Charge pump Limit for
unclamped 5
sensor Level shifter ind. loads Temperature
Rectifier sensor
2 IN
Open load
Load
ESD Logic detection

4 ST
Short circuit
detection

GND PROFET
1
Signal GND Load GND

1) No external components required, reverse load current limited by connected load.

2) Additional external diode required for charged inductive loads
Data Sheet 1 of 14 2010-Jan-26
 PROFET BTS 432 E2

Pin Symbol Function

1 GND Logic ground
2 IN Input, activates the power switch in case of logical high signal
3 Vbb Positive power supply voltage,
the tab is shorted to this pin
4 ST Diagnostic feedback, low on failure
5 OUT Output to the load
(Load, L)

Maximum Ratings at Tj = 25 C unless otherwise specified

Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) Vbb 63 V
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V Vs3) 66.5 V
RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4) IL self-limited A
Operating temperature range Tj -40 ...+150 C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC) Ptot 125 W
Inductive load switch-off energy dissipation,
single pulse Tj=150 C: EAS 1.7 J
Electrostatic discharge capability (ESD) VESD 2.0 kV
(Human Body Model)
Input voltage (DC) VIN -0.5 ... +6 V
Current through input pin (DC) IIN 5.0 mA
Current through status pin (DC) IST 5.0
see internal circuit diagrams page 6...

Thermal resistance chip - case: RthJC 1 K/W

junction - ambient (free air): RthJA 75
SMD version, device on pcb4): typ. 33

3) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.

Data Sheet 2 2010-Jan-26

 PROFET BTS 432 E2

Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)
IL = 2 A Tj=25 C: RON -- 30 38 m
Tj=150 C: 55 70
Nominal load current (pin 3 to 5) IL(ISO) 9 11 -- A
ISO Proposal: VON = 0.5 V, TC = 85 C
Output current (pin 5) while GND disconnected or IL(GNDhigh) -- -- 1 mA
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150C
Turn-on time to 90% VOUT: ton 50 160 300 s
Turn-off time to 10% VOUT: toff 10 -- 80
RL = 12 , Tj =-40...+150C
Slew rate on dV /dton 0.4 -- 2.5 V/s
10 to 30% VOUT, RL = 12 , Tj =-40...+150C
Slew rate off -dV/dtoff 1 -- 5 V/s
70 to 40% VOUT, RL = 12 , Tj =-40...+150C

Operating Parameters
Operating voltage 5) Tj =-40...+150C: Vbb(on) 4.5 -- 42 V
Undervoltage shutdown Tj =-40...+150C: Vbb(under) 2.4 -- 4.5 V
Undervoltage restart Tj =-40...+150C: Vbb(u rst) -- -- 4.5 V
Undervoltage restart of charge pump Vbb(ucp) -- 6.5 7.5 V
see diagram page 12 Tj =-40...+150C:
Undervoltage hysteresis Vbb(under) -- 0.2 -- V
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown Tj =-40...+150C: Vbb(over) 42 -- 52 V
Overvoltage restart Tj =-40...+150C: Vbb(o rst) 42 -- -- V
Overvoltage hysteresis Tj =-40...+150C: Vbb(over) -- 0.2 -- V
Overvoltage protection 6) Tj =-40C: Vbb(AZ) 60 -- -- V
Ibb=40 mA Tj =25...+150C: 63 67
Standby current (pin 3) Tj=-40...+25C: Ibb(off) -- 12 25 A
VIN=0 Tj=150C: -- 18 60
Leakage output current (included in Ibb(off)) IL(off) -- 6 -- A
VIN=0
Operating current (Pin 1)7), VIN=5 V IGND -- 1.1 -- mA

5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V
6) see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
7) Add IST, if IST > 0, add IIN, if VIN>5.5 V
Data Sheet 3 2010-Jan-26
 PROFET BTS 432 E2

Parameter and Conditions Symbol Values Unit

at Tj = 25 C, Vbb = 12 V unless otherwise specified min typ max
Protection Functions8)
Initial peak short circuit current limit (pin 3 to 5)9), IL(SCp)
( max 400 s if VON > VON(SC) )
Tj =-40C: -- -- 74 A
Tj =25C: -- 44 --
Tj =+150C: 24 -- --
Repetitive short circuit current limit IL(SCr)
Tj = Tjt (see timing diagrams, page 10) 22 35 -- A
Short circuit shutdown delay after input pos. slope
VON > VON(SC), Tj =-40..+150C: td(SC) 80 -- 400 s
min value valid only, if input "low" time exceeds 30 s
Output clamp (inductive load switch off)
at VOUT = Vbb VON(CL), IL= 30 mA VON(CL) -- 58 -- V
Short circuit shutdown detection voltage
(pin 3 to 5) VON(SC) -- 8.3 -- V
Thermal overload trip temperature Tjt 150 -- -- C
Thermal hysteresis Tjt -- 10 -- K
Inductive load switch-off energy dissipation10), EAS -- -- 1.7 J
Tj Start = 150 C, single pulse Vbb = 12 V: ELoad12 1.3
Vbb = 24 V: ELoad24 1.0
Reverse battery (pin 3 to 1) 11) -Vbb -- -- 32 V
Integrated resistor in Vbb line Rbb -- 120 --

Diagnostic Characteristics
Open load detection current Tj=-40 C: IL (OL) 2 -- 900 mA
(on-condition) Tj=25..150C: 2 -- 750

8) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9) Short circuit current limit for max. duration of 400 s, prior to shutdown (see td(SC) page 4)
10) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx.
2 VON(CL)
EAS= 1/2 * L * IL * ( ), see diagram page 8.
VON(CL) - Vbb
11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
Data Sheet 4 2010-Jan-26
 PROFET BTS 432 E2

Parameter and Conditions Symbol Values Unit

at Tj = 25 C, Vbb = 12 V unless otherwise specified min typ max

Input and Status Feedback12)

Input turn-on threshold voltage VIN(T+) 1.5 -- 2.4 V
Tj =-40..+150C:
Input turn-off threshold voltage VIN(T-) 1.0 -- -- V
Tj =-40..+150C:
Input threshold hysteresis VIN(T) -- 0.5 -- V
Off state input current (pin 2) VIN = 0.4 V: IIN(off) 1 -- 30 A

On state input current (pin 2) VIN = 3.5 V: IIN(on) 10 25 50 A

Status invalid after positive input slope td(ST SC) 80 200 400 s
(short circuit) Tj=-40 ... +150C:
Status invalid after positive input slope td(ST) 350 -- 1600 s
(open load) Tj=-40 ... +150C:
Status output (open drain)
Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+150C, IST = +1.6 mA: VST(low) -- -- 0.4

12) If a ground resistor RGND is used, add the voltage drop across this resistor.

Data Sheet 5 2010-Jan-26

 PROFET BTS 432 E2

Truth Table
Input- Output Status
Level level 432E2
Normal L L H
operation H H H
Open load L 13) H
H H L
Short circuit L L H
to GND H L L
Short circuit L H H
to Vbb H H H (L14)
Overtem- L L L
perature H L L
Under- L L H
voltage H L H
Overvoltage L L H
H L H
L = "Low" Level
H = "High" Level

Terms Input circuit (ESD protection)

Ibb
R
3 I
IN
I IN
Vbb
IN ESD-
2 IL VON ZDI1 ZDI2
I
OUT I
I ST PROFET
5
GND
ST
4
V VST GND
IN
V 1 IGND ZDI1 6.1 V typ., ESD zener diodes are not designed for
bb VOUT
R continuous current
GND

13) Power Transistor off, high impedance

14) Low resistance short Vbb to output may be detected by no-load-detection
Data Sheet 6 2010-Jan-26
 PROFET BTS 432 E2

Status output Overvolt. and reverse batt. protection

+5V
+ V bb

R ST(ON) V
R bb
ST Z
R IN
IN

ESD- Logic
V
ZD OUT
GND R ST ST
GND PROFET
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 250 at 1.6 mA, ESD zener diodes are not
R GND
designed for continuous current
Signal GND

Rbb = 120 typ., VZ +Rbb*40 mA = 67 V typ., add

Short Circuit detection RGND, RIN, RST for extended protection
Fault Condition: VON > 8.3 V typ.; IN high

Open-load detection
+ V bb ON-state diagnostic condition: VON < RON * IL(OL); IN
high

V + V bb
ON

OUT

Logic Short circuit

detection VON
unit ON

OUT

Logic Open load

Inductive and overvoltage output clamp unit detection

+ V bb

V
Z

V
ON

GND disconnect
OUT

GND
3
Vbb
VON clamped to 58 V typ. IN
2

PROFET OUT
5
ST
4
GND
V V V 1 V
bb IN ST GND

Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .

Due to VGND >0, no VST = low signal available.

Data Sheet 7 2010-Jan-26

 PROFET BTS 432 E2

GND disconnect with GND pull up

3 3

Vbb high Vbb

IN IN
2 2

PROFET OUT PROFET OUT

5 5
ST ST
4 4
GND GND
1 1

V V V
V IN ST V
bb GND bb

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.

Vbb disconnect with charged inductive Inductive Load switch-off energy

load dissipation
E bb

3 E AS

high Vbb ELoad

IN
2 Vbb
IN
PROFET OUT
5
PROFET OUT
ST
4 =
GND ST EL
1 GND

ER
V
bb

Energy dissipated in PROFET EAS = Ebb + EL - ER.

2
ELoad < EL, EL = 1/2 * L * I L

Data Sheet 8 2010-Jan-26

 PROFET BTS 432 E2

Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type BTS 432E2
Logic version E
Overtemperature protection
Tj >150 C, latch function15)16)
Tj >150 C, with auto-restart on cooling X
Short-circuit to GND protection
switches off when VON>8.3 V typ.15) X
(when first turned on after approx. 200 s)
Open load detection
in OFF-state with sensing current 30 A typ.
in ON-state with sensing voltage drop across X
power transistor
Undervoltage shutdown with auto restart X
Overvoltage shutdown with auto restart X
Status feedback for
overtemperature X
short circuit to GND X
short to Vbb -17)
open load X
undervoltage -
overvoltage -
Status output type
CMOS
Open drain X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL) X
Load current limit
high level (can handle loads with high inrush currents) X
medium level
low level (better protection of application)

15) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
16) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
17) Low resistance short V to output may be detected by no-load-detection
bb

Data Sheet 9 2010-Jan-26

 PROFET BTS 432 E2

Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: Vbb turn on:

IN
IN

t d(bb IN)
V td(ST)
bb ST

*)

V
V OUT
OUT

ST open drain I
L
IL(OL)
t t
A
in case of too early VIN=high the device may not turn on (curve A) *) if the time constant of load is too large, open-load-status may
td(bb IN) approx. 150 s occur

Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit,

IN IN

ST ST

V V
OUT OUT

td(SC)

I I
L L

t t

td(SC) approx. 200s if Vbb - VOUT > 8.3 V typ.

Data Sheet 10 2010-Jan-26

 PROFET BTS 432 E2

Figure 3b: Turn on into overload, Figure 4a: Overtemperature:

Reset if Tj <Tjt
IN

IN

IL
ST
I L(SCp)
IL(SCr)

V
OUT

T
ST t J

t
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.

Figure 5a: Open load: detection in ON-state, turn

Figure 3c: Short circuit while on: on/off to open load

IN
IN

t
ST ST d(ST)

V OUT V
OUT

I
IL L
**) open

t t

**) current peak approx. 20 s

Data Sheet 11 2010-Jan-26

 PROFET BTS 432 E2

Figure 5b: Open load: detection in ON-state, open Figure 6b: Undervoltage restart of charge pump
load occurs in on-state
VON [V]

V on VON(CL)
IN
off

td(ST OL1) t d(OL ST2)

ST

V V
OUT bb(over)
off

V V
bb(u rst) bb(o rst)

I normal open normal

L V
bb(u cp)

V bb(under)
t on
V bb

td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ Vbb [V]
charge pump starts at Vbb(ucp) =6.5 V typ.

Figure 6a: Undervoltage:

Figure 7a: Overvoltage:

IN
IN

V bb V ON(CL) V bb(o rst)

Vbb Vbb(over)

V Vbb(u cp)
bb(under)
V
bb(u rst)

V
OUT
V OUT

ST open drain
ST

t t

Data Sheet 12 2010-Jan-26

 PROFET BTS 432 E2

Package and Ordering Code

All dimensions in mm
PG-TO220-5-11 SMD PG-TO263-5-2
BTS 432 E2 BTS432E2 E3062A

10 0.2
A
4.4
9.9 0.2 10 0.2
1.27 0.1
8.5 1) 4.4 0...0.3
3.7 -0.15 A B
1.27 0.1 8.5 1)

1 0.3
0.05

0...0.3 2.4

7.55 1)
1)
15.65 0.3

2.8 0.2

9.25 0.2

1.3 0.3
12.95
17 0.3

0.05 0.1
9.25 0.2
1.6 0.3

(15)
2.4

2.7 0.3
4.7 0.5
8.6 0.3
10.2 0.3

3.7 0.3

0...0.15
C
0...0.15 0.5 0.1 5 x 0.8 0.1 0.5 0.1
5 x 0.8 0.1 3.9 0.4 4 x 1.7
4 x 1.7 8.4 0.4 8 MAX.
0.25 M A C
0.25 M A B 0.1 B
1)
Typical
All metal surfaces tin plated, except area of cut.
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut. GPT09062
Green Product
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Revision History
Version Date Changes
Rev. 1.1 2010-01-26 Page 13: Package drawing for PG-TO220-5-11 corrected.
Rev. 1.0 2009-11-12 RoHS-compliant version of BTS432E2
Removal of straight lead package variant E3043
Page 1, page 13: RoHS compliance statement and Green product feature added
Page 1, page 13: Change to RoHS compliant packages; PG-TO220-5-11 for
standard (staggered) variant; PG-TO263-5-2 for E3062A variant.
Page 2: Thermal resistance junction to ambient for SMD version set to typically
33K/W.
Page 2: Pin marking removed.
Page 6, 9: Discontinued variants removed from truth table & options overview.
Legal disclaimer updated

Data Sheet 13 2010-Jan-26

 PROFET BTS 432 E2

Published by
Infineon Technologies AG
81726 Munich, Germany
2010 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.

Data Sheet 14 2010-Jan-26