IRF9630, SiHF9630

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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY Dynamic dV/dt rating
VDS (V) -200 Repetitive avalanche rated Available
RDS(on) max. () VGS = -10 V 0.80 P-channel
Qg max. (nC) 29 Fast switching Available

Qgs (nC) 5.4 Ease of paralleling

Qgd (nC) 15
Simple drive requirements
Material categorization: for definitions of compliance
Configuration Single
please see www.vishay.com/doc?99912
S Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
TO-220AB example, parts with lead (Pb) terminations are not RoHS-compliant.
G Please see the information / tables in this datasheet for details.

DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
S ruggedized device design, low on-resistance and
D D
G cost-effectiveness.
P-Channel MOSFET
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRF9630PbF
Lead (Pb)-free
SiHF9630-E3
IRF9630
SnPb
SiHF9630

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -200
V
Gate-Source Voltage VGS 20
TC = 25 C -6.5
Continuous Drain Current VGS at -10 V ID
TC = 100 C -4.0 A
Pulsed Drain Current a IDM -26
Linear Derating Factor 0.59 W/C
Single Pulse Avalanche Energy b EAS 500 mJ
Repetitive Avalanche Current a IAR -6.4 A
Repetitive Avalanche Energy a EAR 7.4 mJ
Maximum Power Dissipation TC = 25 C PD 74 W
Peak Diode Recovery dV/dt c dV/dt -5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150
C
Soldering Recommendations (Peak temperature) d for 10 s 300
10 lbf in
Mounting Torque 6-32 or M3 screw
1.1 Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -50 V, starting TJ = 25 C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12).
c. ISD -6.5 A, dI/dt 20 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.

S16-0754-Rev. D, 02-May-16 1 Document Number: 91084

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - C/W
Maximum Junction-to-Case (Drain) RthJC - 1.7

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 A -200 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = -1 mA - -0.24 - V/C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 A -2.0 - -4.0 V
Gate-Source Leakage IGSS VGS = 20 V - - 100 nA
VDS = -200 V, VGS = 0 V - - -100
Zero Gate Voltage Drain Current IDSS A
VDS = -160 V, VGS = 0 V, TJ = 125 C - - -500
Drain-Source On-State Resistance RDS(on) VGS = -10 V ID = -3.9 A b - - 0.80
Forward Transconductance gfs VDS = -50 V, ID = -3.9 A b 2.8 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 700 -
Output Capacitance Coss VDS = -25 V, - 200 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 40 -
Total Gate Charge Qg ID = -6.5 A, - - 29
Gate-Source Charge Qgs VGS = -10 V VDS = -160 V, - - 5.4 nC
Gate-Drain Charge Qgd see fig. 6 and 13 b - - 15
Turn-On Delay Time td(on) - 12 -
Rise Time tr - 27 -
VDD = -100 V, ID = -6.5 A, ns
Turn-Off Delay Time td(off) Rg = 12 , RD = 15, see fig. 10 b - 28 -
Fall Time tf - 24 -
Between lead, D
Internal Drain Inductance LD - 4.5 -
6 mm (0.25") from
nH
package and center of G

Internal Source Inductance LS die contact - 7.5 -

S

Gate Input Resistance Rg f = 1 MHz, open drain 0.6 - 3.7

Drain-Source Body Diode Characteristics
MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - -6.5
showing the
A
integral reverse G

Pulsed Diode Forward Current a ISM p -n junction diode S

- - -26

Body Diode Voltage VSD TJ = 25 C, IS = -6.5 A, VGS = 0 V b - - -6.5 V

Body Diode Reverse Recovery Time trr - 200 300 ns
TJ = 25 C, IF = -6.5 A, dI/dt = 100 A/s b
Body Diode Reverse Recovery Charge Qrr - 1.9 2.9 C
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

S16-0754-Rev. D, 02-May-16 2 Document Number: 91084

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9630, SiHF9630
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TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

RDS(on), Drain-to-Source On Resistance

VGS 3.0
ID = - 6.5 A
Top - 15 V VGS = - 10 V
- 10 V 2.5
101 - 8.0 V
- ID, Drain Current (A)

- 7.0 V
- 6.0 V 2.0

(Normalized)
- 5.5 V
- 5.0 V
- 4.5 V 1.5
Bottom - 4.5 V
100
1.0

0.5
20 s Pulse Width
TC = 25 C
10-1 0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91084_01 - VDS, Drain-to-Source Voltage (V) 91084_04 TJ, Junction Temperature (C)

Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 4 - Normalized On-Resistance vs. Temperature

1200
VGS = 0 V, f = 1 MHz
VGS Ciss = Cgs + Cgd, Cds Shorted
Top - 15 V 1000 Crss = Cgd
101 - 10 V Coss = Cds + Cgd
Capacitance (pF)

- 8.0 V
- ID, Drain Current (A)

800
- 7.0 V Ciss
- 6.0 V
- 5.5 V - 4.5 V 600
- 5.0 V
Bottom - 4.5 V
100 400

Coss
200
Crss
20 s Pulse Width
0
TC = 150 C
10-1 100 101
10-1 100 101
91084_05 - VDS, Drain-to-Source Voltage (V)
91084_02 - VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20
ID = - 6.5 A
- VGS, Gate-to-Source Voltage (V)

VDS = - 160 V
16
- ID, Drain Current (A)

101 VDS = - 100 V

150 C
25 C
12 VDS = - 40 V

100
4
20 s Pulse Width For test circuit
VDS = - 50 V see figure 13
0
4 5 6 7 8 9 10 0 5 10 15 20 25 30
91084_03 - VGS, Gate-to-Source Voltage (V) 91084_06 QG, Total Gate Charge (nC)

Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

S16-0754-Rev. D, 02-May-16 3 Document Number: 91084

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9630, SiHF9630
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Vishay Siliconix

7.0
- ISD, Reverse Drain Current (A)

101 6.0

- ID, Drain Current (A)

5.0
150 C
25 C
4.0

100 3.0

2.0

1.0
VGS = 0 V
10-1 0.0
0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150
91084_07 - VSD, Source-to-Drain Voltage (V) 91084_09 TC, Case Temperature (C)

Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature

RD
103 VDS
Operation in this area limited
5
by RDS(on)
2
VGS
D.U.T.
- ID, Drain Current (A)

102 RG
+
5 - VDD
2
10 s
- 10 V
10 100 s
Pulse width 1 s
5
Duty factor 0.1 %
1 ms
2

1 10 ms Fig. 10a - Switching Time Test Circuit

5 TC = 25 C
TJ = 150 C
2 td(on) tr td(off) tf
Single Pulse
0.1 VGS
2 5 2 5 2 5 2 5
0.1 1 10 102 103 10 %
91084_08 - VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

90 %
VDS

Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1 D = 0.5

0.2 PDM
0.1

0.1 0.05 t1
0.02 t2
0.01 Single Pulse Notes:
(Thermal Response) 1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91084_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S16-0754-Rev. D, 02-May-16 4 Document Number: 91084

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9630, SiHF9630
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Vishay Siliconix

L IAS
VDS
Vary tp to obtain
required IAS
VDS
RG D.U.T
-
+ V DD
IAS VDD
- 10 V tp
tp 0.01 A
VDS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

1200
ID
EAS, Single Pulse Energy (mJ)

Top - 2.9 A
1000 - 4.1 A
Bottom - 6.5 A
800

600

400

200

VDD = - 50 V
0
25 50 75 100 125 150

91084_12c Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 k
- 10 V 12 V 0.2 F
0.3 F

QGS QGD -

D.U.T. + VDS

VG
VGS

- 3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13c - Gate Charge Test Circuit

S16-0754-Rev. D, 02-May-16 5 Document Number: 91084

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9630, SiHF9630
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Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T. +
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-

- - +

Rg dV/dt controlled by Rg +
ISD controlled by duty factor D VDD
D.U.T. - device under test -

Note
Compliment N-Channel of D.U.T. for driver

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = - 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current

ISD
Ripple 5 %

Note
a. VGS = - 5 V for logic level and - 3 V drive devices

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91084.

S16-0754-Rev. D, 02-May-16 6 Document Number: 91084

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A MILLIMETERS INCHES
E DIM.
MIN. MAX. MIN. MAX.
F
A 4.24 4.65 0.167 0.183
P b 0.69 1.02 0.027 0.040
Q

b(1) 1.14 1.78 0.045 0.070

H(1)

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
1 2 3
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1)

L(1) 3.33 4.04 0.131 0.159

M* P 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
L

DWG: 6031
Note
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

C
b
e
J(1)
e(1)

Package Picture
ASE Xian

Revison: 14-Dec-15 1 Document Number: 66542

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16 1 Document Number: 91000