2N3903, 2N3904

2N3903 is a Preferred Device

General Purpose
Transistors
NPN Silicon

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COLLECTOR
3
MAXIMUM RATINGS
Rating Symbol Value Unit 2
CollectorEmitter Voltage VCEO 40 Vdc BASE

CollectorBase Voltage VCBO 60 Vdc

1
EmitterBase Voltage VEBO 6.0 Vdc
EMITTER
Collector Current Continuous IC 200 mAdc
STYLE 1
Total Device Dissipation PD
@ TA = 25C 625 mW
Derate above 25C 5.0 mW/C
TO92
Total Device Dissipation PD
CASE 29
@ TC = 25C 1.5 Watts 1 STYLE 1
Derate above 25C 12 mW/C 2
3
Operating and Storage Junction TJ, Tstg 55 to C
Temperature Range +150
MARKING DIAGRAMS

THERMAL CHARACTERISTICS (Note 1.)

2N 2N
Characteristic Symbol Max Unit 3903 3904
Thermal Resistance, RJA 200 C/W YWW YWW
Junction to Ambient
Thermal Resistance, RJC 83.3 C/W
Junction to Case
Y = Year
1. Indicates Data in addition to JEDEC Requirements. WW = Work Week

ORDERING INFORMATION

Device Package Shipping

2N3903 TO92 5000 Units/Box

2N3903RLRM TO92 2000/Ammo Pack

2N3904 TO92 5000 Units/Box

2N3904RLRA TO92 2000/Tape & Reel

2N3904RLRE TO92 2000/Tape & Reel

2N3904RLRM TO92 2000/Ammo Pack

2N3904RLRP TO92 2000/Ammo Pack

2N3904RL1 TO92 2000/Tape & Reel

2N3904ZL1 TO92 2000/Ammo Pack

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

November, 2000 Rev. 3 2N3903/D
 2N3903, 2N3904

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 Vdc
CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 Vdc
EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL 50 nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX 50 nAdc

ON CHARACTERISTICS
DC Current Gain (Note 2.) hFE
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903 20
2N3904 40
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3903 35
2N3904 70
(IC = 10 mAdc, VCE = 1.0 Vdc) 2N3903 50 150
2N3904 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 2N3903 30
2N3904 60
(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903 15
2N3904 30
CollectorEmitter Saturation Voltage (Note 2.) VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.2
(IC = 50 mAdc, IB = 5.0 mAdc 0.3
BaseEmitter Saturation Voltage (Note 2.) VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) 0.95

SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903 250
2N3904 300
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo 4.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 8.0 pF
Input Impedance hie k
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 1.0 8.0
2N3904 1.0 10
Voltage Feedback Ratio hre X 104
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 0.1 5.0
2N3904 0.5 8.0
SmallSignal Current Gain hfe
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 50 200
2N3904 100 400
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 40 mhos
Noise Figure NF dB
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3903 6.0
2N3904 5.0

SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, td 35 ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr 35 ns
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, 2N3903 ts 175 ns
IB1 = IB2 = 1.0 mAdc) 2N3904 200
Fall Time tf 50 ns
2. Pulse Test: Pulse Width
300 s; Duty Cycle
2%.

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 2N3903, 2N3904

+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 s t1
300 ns +10.9 V
+10.9 V DUTY CYCLE = 2%
275 275

10 k 10 k
0
-
0.5 V
< 1 ns CS < 4 pF* 1N916 CS < 4 pF*

-
9.1 V
< 1 ns

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25C
TJ = 125C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
5.0
CAPACITANCE (pF)

Q, CHARGE (pC)

1000
700
Cibo
3.0 500

300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

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 2N3903, 2N3904

500 500
IC/IB = 10 VCC = 40 V
300 300
IC/IB = 10
200 200

100 100

t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)

50 50

30 30
40 V
20 20
15 V
10 10
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. TurnOn Time Figure 6. Rise Time

500 500
ts = ts - 1/8 tf VCC = 40 V
300 IB1 = IB2 300
IC/IB = 20 IC/IB = 10 IB1 = IB2
200 200
IC/IB = 20
t s , STORAGE TIME (ns)

t f , FALL TIME (ns)

100 100
70 70
50 IC/IB = 20 50
IC/IB = 10 IC/IB = 10
30 30
20 20

10 10
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time Figure 8. Fall Time

TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)

12 14
SOURCE RESISTANCE = 200
f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA 12
10
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

10 IC = 0.5 mA
8 SOURCE RESISTANCE = 200

IC = 0.5 mA IC = 50 A
8
6 SOURCE RESISTANCE = 1.0 k IC = 100 A
IC = 50 A 6
4
4

2 SOURCE RESISTANCE = 500
2

IC = 100 A
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)

Figure 9. Figure 10.

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 2N3903, 2N3904

h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)

300 100

hoe, OUTPUT ADMITTANCE ( mhos)

50

200
h fe , CURRENT GAIN

20

10
100

70 5

50
2

30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain Figure 12. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 7.0
h ie , INPUT IMPEDANCE (k OHMS)

10
5.0
5.0
3.0

2.0 2.0

1.0
1.0
0.5
0.7

0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio

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 2N3903, 2N3904

TYPICAL STATIC CHARACTERISTICS

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125C VCE = 1.0 V

1.0 +25C

0.7
0.5 -
55C

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 1.0
TJ = 25C
1.0 VBE(sat) @ IC/IB =10 0.5 +25C TO +125C
VC FOR VCE(sat)
COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)

0.8 0 -
55C TO +25C

VBE @ VCE =1.0 V
0.6 -
0.5
-
55C TO +25C
0.4 -
1.0
VCE(sat) @ IC/IB =10 +25C TO +125C
0.2 -
1.5 VB FOR VBE(sat)

0 -
2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 17. ON Voltages Figure 18. Temperature Coefficients

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 2N3903, 2N3904

PACKAGE DIMENSIONS

TO92
TO226AA
CASE 2911
ISSUE AL NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION XX R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---
N STYLE 1: STYLE 14:
PIN 1. EMITTER PIN 1. EMITTER
2. BASE 2. COLLECTOR
3. COLLECTOR 3. BASE

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 2N3903, 2N3904

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