Transistor

2SA1512
Silicon PNP epitaxial planer type

For low-frequency output amplification

Unit: mm
Complementary to 2SC1788
4.00.2

3.00.2
Features
Low collector to emitter saturation voltage VCE(sat).
Optimum for low-voltage operation and for converters.

15.60.5
Allowing supply with the radial taping.
Optimum for high-density mounting.

Absolute Maximum Ratings (Ta=25C)

+0.2
0.450.1
marking

0.70.1

2.00.2
Parameter Symbol Ratings Unit 1 2 3

Collector to base voltage VCBO 25 V

Collector to emitter voltage VCEO 20 V 1.27 1.27
Emitter to base voltage VEBO 7 V 2.540.15

Peak collector current ICP 1 A

Collector current IC 0.5 A 1:Emitter
2:Collector EIAJ:SC72
Collector power dissipation PC 300 mW 3:Base New S Type Package
Junction temperature Tj 150 C
Storage temperature Tstg 55 ~ +150 C

Electrical Characteristics (Ta=25C)

Parameter Symbol Conditions min typ max Unit
ICBO VCB = 25V, IE = 0 100 nA
Collector cutoff current
ICEO VCE = 20V, IB = 0 1 A
Collector to base voltage VCBO IC = 10A, IE = 0 25 V
Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V
Emitter to base voltage VEBO IE = 10A, IC = 0 7 V
hFE1*1 VCE = 2V, IC = 0.5A*2 90 220
Forward current transfer ratio
hFE2 VCE = 2V, IC = 1A*2 25
Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA*2 0.4 V
Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA*2 1.2 V
Transition frequency fT VCB = 10V, IE = 50mA, f = 200MHz 150 MHz
Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 15 25 pF
*2 Pulse measurement

*1h Rank classification

FE1

Rank Q R
hFE1 90 ~ 155 130 ~ 220

1
Transistor 2SA1512

PC Ta IC VCE VCE(sat) IC
500 1.2 100

Collector to emitter saturation voltage VCE(sat) (V)

Ta=25C IC/IB=10
Collector power dissipation PC (mW)

450 IB=10A
30
1.0
400 9A

Collector current IC (mA)

8A 10
350 7A
0.8
6A 3
300
5A
250 0.6 4A 1

200 3A
0.3
0.4 Ta=75C
150 2A
0.1 25C
100
0.2 1A 25C
50 0.03

0 0 0.01
0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 0.01 0.03 0.1 0.3 1 3 10
Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A)

VBE(sat) IC hFE IC fT IE
100 600 320
IC/IB=10 VCB=10V
Base to emitter saturation voltage VBE(sat) (V)

VCE=2V
Ta=25C
280
Forward current transfer ratio hFE

30

Transition frequency fT (MHz)

500

10 240

400
3 200

Ta=25C
1 25C 300 Ta=75C 160
75C 25C
0.3 120
200
25C
0.1 80

100
0.03 40

0.01 0 0
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 30 100
Collector current IC (A) Collector current IC (A) Emitter current IE (mA)

Cob VCB
80
Collector output capacitance Cob (pF)

IE=0
70 f=1MHz
Ta=25C
60

50

40

30

20

10

0
1 3 10 30 100
Collector to base voltage VCB (V)