EF 9 VariableMU RF. pentode ‘This is an R.P. or LF. varinble-mu pentode that can also be used as a resistance-coupled A.F. amplifier, with or withont control of the amount of gain (A.G.C. operating also on the A.F. stage). The design of this valve differs from that of the EF 5 in that in place of a fixed screen potential the latter is made to vary on an increasing bias. Instead of taking the screen voltage from a potential divider the screen may be fed via a resistor. Without control the screen potential is adjusted, by means of the voltage drop across this resistor. to about 100 V. Due to the application of gain control the screen current drops and therefore also the potential difference across EF Fig. 1 the resistor; the screen pinensions in mi. pay voltage thus rises again until, under full control, it approaches the value ‘This varying voltage on the screen is referred to as. “self-adjusting” or “sliding” sereen voltage. The advantage of using a sereen-grid series re- sistor is to be found in the fact that, assuming roughly equal cross-mo- dulation conditions, the anode current without control is lower and the mutual conductance higher than in a valve with fixed sereen vol- tage. For example, the anode current of the EF 9, at —2.5 V and 100 V screen, in the uncontrolled condition 7-0 3 0 0 0 -0 208 of the supply voltage. im / a ie Arrangement of electrodes and vase eonneetions. Fig, 3 Ta/¥9, characteristics using V4 ‘The broken line shows the an control applied to the valve, with the screen fed through a resistance of 90,000 olums from ‘a supply voltage of 250 V. 4s parameter. le current with is 6 mA and the mutual conductance 2.2mA/V, whereas in the case of the EF 5, at Vg, =—3 V and Vy, = 100 V, the anode current is 8 mA and the mutual conductance 1.7 mA/V. When the screen voltage rises the Lq/ lg, characteristic is displaced to the left and, if the curve has a short “tail” when the valve is in the uncontrolled condition, this will steadily increase in size as the sereen voltage rises: the logarithmic J,/Vp, characteristics with respect to different screen potentials shown in Fig. 3 will confirm this fact. Arising from these circumstances it may be said that, although the J,/Vq, characteristic for the uncontrolled valve has only a short tail, the cross-modulation properties during the time that control is applied are considerably better than if the sereen voltage were constant. Ona supply voltage of 250 V the screen-grid series resistor must be 90,000 ohmsin order to obtain 100 V on the screen without control. As there is a different sereen voltage for 81EF 9 every value of the grid bins, the anode current plotted against grid bias is shown by a broken line. An alternating grid voltage does not affect the sereen voltage, since the screen is decoupled with a capacitor and in this case the anode current varies in accordance with the IqlVgy characteristic relating to the appropriate grid bins. According to Fig. at 12.5 V bias is 17 bias value the Jq/F'g, character refers to Vy, = 175 V. On other supply voltages the sereen-grid resistor must be adjusted accordingly and the control curve is thereby slightly modified : for instance on a 200 V supply (as in A.C/D.C. sets) 60,000 ohms will he required to produce 110 V- screen voltage without control. The anode voltage will then fall rather more rapidly. On a the sereen voltage 5 V, so that at this istic va I lawl LET l, supply of 100 V, however, the sliding a a sereen voltage no longer functions and sem tho valve has therefore to be used with Fie 4 a fixed sereen potential. In this ease the twa cinguctne a a funtion of tho gd Ja/Vn charactoristie for Vg. = 100 ¥ 3 the hutual conductance of the valve shown in Fig. 3 applies. If a potential ‘ud eupiiy voltage divider is used for feeding the screen it V possible to obtain a more rapid control- Jing effect than with fixed sereen potential by a judicions arrangement of the resistance values in the network, but it should be bore in mind that the cross-modulation characteristic is then not quite so good. By means of the Jy,/Vy. eurves in Fig. 10 the various values can he determined for each particular ease in advance, A suitable choiee of control curve will also guarantee excellent: modulation-hum characteristics, this being of especial importance when dealing with A.C./D.C, mains receivers. A special feature of the EF 9 is the very low interelectrode capacitance; the anode-to- grid capacitance is less than 0.002 jiF and the valve therefore gives very good results resistor af 90,00) 0] on™ le pease Kig. 5 ‘Theoretical cixeuit diagram of an LF. valvo c1uployiag the principle of the “sliding” sereen voltae,EF 9 v0 zen © 0 "at 1000 BUsY; Sd? ‘alternating grid vol ual conductance jon; sereen grid. fed W0 ohms from i 200 V r with 1% eros with 1% cross 5 sereen fed. vi via a resistor of 60, resistor ‘of 10,000 oluns from 250 V supply Centre diagram. Eltective alternating geid Vol. st tage as a function of the mutual conductaner, Centre diugram. wrfective alternating urid. vole with 1% modulation hum, Taye as 4 fumetion of he mutual conductance, er diagram. Mutual conductance Sand swith 1% modulation hui. anode current Twas a function of the grid bias. Tower diagram. Mutual conduetance Sand ‘node current Za as a funetion of the grid Tas. in the short-wave mnge. Although in this range the magnification of the circuits is usually only fair, the EF 9 will ensure a high degree of amplification. As already mentioned, the EF 9 can also be employed as a resistance-coupled AP, amplifier; by applying a control voltage to the grid the amplifier may he so regulated that the performance of the A.G.C. of the receiver is enhanced by the A.I’. stage. ‘The relevant data will be found in the table on page 276. HEATER RATINGS Heating: indirect, A.C. or D.C., series or parallel supply. etcrvlec Heater current . s - CAPACITANCES, Cag < 0.002 yP 5.5 pk 72 ykEF 9 Fig. 8 Upper diagram. Plfoctive alternating zrld vol- tage as a function of the mutual conductance with 1% eross-modulation, at Va = 100 V, Fy,= 100-¥ (nixed), Centre diagram, Bifective alternating cid vol tage as a function of the mutual conductance jth 1% modulation hum. Tower diagram. ‘Mutual conductance S and anode current Za as a function of the grid bias. OPERATING DATA: EF 9 used as R.F. or LF, amplifier Anode voltage Suppressor grid voltage»... - Sereen-grid series resistor eee 90,000 ohms Cathode resistor... eee Grid bias. 2... ae 39 V4) —49 V9) Soren vollege ee 250 V Anode current ee - Sereen current... 2... — Mutual conductanee. . 2... 2. 4.5 wA/V Internal resistance. 2... 2. se >10 > 10Mohms Anode voltage - 200 V Suppressor grid voltage... =0v Sereen-grid series resistor : 60,000 ohms Cathode resistor ©... 2... 325 ohms Grid bias. —32 V4) —39 V*) Sereen voltage . _ 200 V Anode current... . . ] = Screen current... 2... 2 we - _ Mutual conductance 22 5.5 pAlV Internal resistance >10 > 10Mohms Anode voltage . . ee 100 V Suppressor-grid voltage -- ov Screen-grid voltage... . 100 V Cathode resistor... 2... = 325 ohms Grid bias. . —16 V4) -19 V9) Anode current 5... 0. Screen current... . ie = = Mutual conductance... 2... . 8 = 2,200 22 TA Internal resistance... 2... . Re = 04 >10 > 10 Mohms ») Without control. *) futual conductance reduced to one-hundredth of uncontrolled value, *) Extreme Tmt of control range 84Pig. 9 Anode current asa fun of the anode voltage at ditfer- ent values of the grid. bias, With a fixed sereen Voltaye uf 100 Y, MAXIMUM RATINGS Anode voltage in cold condition . . Anode voltage... ae Anode dissipation. . : Sereen voltage in cold condition . Screen voltage at Jy = 6 mA . Screen voltage at J, == 3 mA : Screen-grid dissipation. . 2.2... Cathode current Grid voltage at grid current. start Ua Resistance between grid and cathode... . . Resistance between filament and cathode... . . Ry Voltage between filament and cathode (direct voltage or effective value of alternating voltage)... . Wye 27018 ase -20v -osv sv @ 50 100 50 200 Waly 250 Fig. 10 Sereen current as a function of the sereen voltage at difforent values of the grid hias. Theso eurvos also apply as an approximation to anode voltages between 100 aud 250 V- . 3 Mohms = max. 20,000 ohms = max. 100 V For data referring to the use of the valve as. a resistance-coupled AP. amplifier see Table on p. (272). The EF 9 is used as amplifier valve with ma- nually or automatically controlled amplification. ‘The heating-up time is shorter than usual and the cathode insulation is rated to carry 100 V direct voltage or eflee- tive valne of the altern: ating voltage; this value should not be exceeded. 85 EF 9EF 9 OPERATING DATA: EF 9 used as resistance-coupled A.F. amplifier with controlled amplification (in amplifiers or A.C. receivers) Supply | Anode | Sereen | Cathode’ Anode | Screen | Alter- ‘Total voltage | ‘coup | series | res. current | current nating distor- Ting | “res, input. | output tion. res. volts | volts vo ta | aoe Ja | ag, | vi | vo atot (¥)_} at ohm | ow ohm) ama) | md | wep | wa a. 250 | 02 | 08 0.87 | 0.26 | 0.028 0.8 250 | 02 | 08 0.69 | 0.21 | 0.075 0.8 250 | 0.2 | 08 0.55 | 0.17 ]0.13 Ll 250 | 02 | 08 0.37 | 0.11 }0.27 | 3 | 116] 15 250 | 02 | 08 0.17 | 0.05 Jo45 | 3 | 67] 27 250 | 02 | 08 | 1,750] 0 | 087 | 0.26 |0.047] 5 | 106 250 | 02 | 08 | 1,750] —3 | 0.69 | 0.21 J0.125] 5 250 | 02 | 08 | 1,750 | —10 | 0.55 [0.17 ]0.22 | 5 250 | 02 | 08 | 1,750 | —1s | 0.37 | 0.11 Jo42 | 5 | 116 250 | 02 | 08 | 1,750 | —25 | 0.17 [0.05 ]0.75 | 5 | 67 250 | 02 | 08 | 1,750] 0 | 0.87 | 0.26 |0.004) 10 }106 | 2.7 250 | 02 | 08 | 1,750] —5 | 069 | 0.21 |0.25 | 10 | 40 | 27 250 | 02 | 08 | 1,750 | —10 | 0.55 | 0.17 ]0.43 | 10 | 23 | 3.7 250 | 0.2 | 08 | 1,750 | —18 | 0.37 | 0.11 ]0.86 | 10 | 116] 48 250 | 02 | 08 | 1,750 | —25 | 0.17 | 0.05 |146 | 10 | 6.7] 88 o | 16 | 0.45 | 0.035 250 | 0.1 x 5 | 08 250 | O.1 —5 | 1.22 | 0.36 | 0.083 36 | 0.8 250 | O.1 10 | 0,92 | 0.28 | 0.15 20 | 12 250 | 0.1 —18 | 0.57 | 0.18 [0.33 92] 18 250 | 0.1 —25 | 0.36 | 0.11 [0.55 55] 28 250 | 0.1 0 | 16 | 0.45 |0.059 8 | 13 250 | Ol J 7 0.14 36 | 14 250 | OL —10 0.25 20 | 21 250 | 0.1 —18 0.55 9.2] 3.1 250 | OL —25 0.91 5.5] 48 250 | 01 | 0.4 | 1,000 250 | 01 | 0.4 | 1,000 250 | 0.1 | 04 | 1,000 250 | 0.1 | 0.4 | 1,000 250 | 01 | 04 | 1,000 0.45 [0.118] 10 | 85 | 2.5 0.36 {0.28 | 10 | 36 | 2.7 0.281049 | 10 | 20 | 41 0.1g|ios | 10 | 92) 6.1 o.11|1s3 | 10 | 55] 95 Note, The values for the voltage gain relate to cases where the grid leak of the next valve is 0.7 megohm. The control voltage on the grid must not be interchanged with the grid bias, which consists of the control voltage augmented by the voltage drop across the cathode resistor. 276