Semikonduktor 3

TUGAS 5
SEMIKONDUKTOR
Diajukan untuk memenuhi salah satu tugas mata kuliah Dasar Perancangan Fabrikasi
Sistem Elektronika
Program Diploma IV Politeknik
Disusun oleh:
Muhamad Zahra Saputra (151354021)
2C
JURUSAN TEKNIK ELEKTRO

PRODI D4 TEKNIK ELEKTRONIKA
POLITEKNIK NEGERI BANDUNG
2016
1. STMicroelectronics STGF3NC120HD, IGBT Transistor, 6 A 1200 V,

1MHz, 3-Pin TO-220FP
IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power
semiconductor device, noted for high efficiency and fast switching. The IGBT
combines the simple gate-drive characteristics of the MOSFETs with the high-current
and lowsaturation-voltage capability of bipolar transistors by combining an isolated
gate FET for the control input, and a bipolar power transistor as a switch, in a single
device.
Maximum Continuous Collector Current
6A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
25 W
Package Type
TO-220FP
Mounting Type
Through Hole
Channel Type
Pin Count
Switching Speed
1MHz
Transistor Configuration
Single
Configuration
Single
Length
10.4mm
Width
4.6mm
Height
16.4mm
Dimensions
10.4 x 4.6 x 16.4mm
Minimum Operating Temperature
-55 C
Maximum Operating Temperature
+150 C
2. BTB12-600SWRG STMicroelectronics, TRIAC, 600V 12A, Gate Trigger

1.3V 10mA, 3-Pin TO-220AB
TRIAC, 8A to 12A,
STMicroelectronics
Rated Average On-State Current
12A
Mounting Type
Through Hole
Package Type
TO-220AB
Maximum Gate Trigger Current
10mA
Repetitive Peak Reverse Voltage
600V
Surge Current Rating
126A
Pin Count
Maximum Gate Trigger Voltage
1.3V
Repetitive Peak Forward Blocking Voltage
600V
Maximum Holding Current
15mA
Dimensions
10.4 x 4.6 x 15.9mm
Length
10.4mm
Width
4.6mm
Height
15.9mm
+125 C
-40 C
Repetitive Peak Off-State Current
1mA
Peak On-State Voltage
1.55V
3. Infineon IRLB3034PBF N-channel MOSFET Transistor, 343 A, 40 V, 3Pin TO-220AB
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel
MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies
supports the customer demands for higher power density, smaller size, more
portability and more flexible systems.
MOSFET Transistors, Infineon (IR)

Infineon comprehensive portfolio of rugged single and dual N-channel and P-channel
devices offer fast switching speeds and addresses a wide variety of power
requirements. Applications range from ac-dc and DC-DC power supplies to audio and
consumer electronics and from motor control to lighting and home appliances.
Channel Type
Maximum Continuous Drain Current
343 A
Maximum Drain Source Voltage
40 V
Maximum Drain Source Resistance
0.002
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Gate Source Voltage
20 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
Single
Channel Mode
Enhancement
Category
Power MOSFET
375 W
Width
4.83mm
Number of Elements per Chip
Typical Input Capacitance @ Vds
10315 pF@ 25 V
Transistor Material
Si
Length
10.67mm
Dimensions
10.67 x 4.83 x 9.02mm
Typical Turn-On Delay Time
65 ns
-55 C
Typical Gate Charge @ Vgs
108 nC @ 4.5 V
Typical Turn-Off Delay Time
97 ns
Height
9.02mm
+175 C
4. NXP BFT46 N-channel JFET Transistor, 25 V, Idss 0.2 1.5mA, 3-Pin

TO-236AB
N-channel JFET, NXP

JFET Transistors
A range of JFET (junction field-effect transistor) and
HEMT/HFET (high-electron-mobility transistor/ heterojunction FET) discrete semiconductor devices.
Channel Type
Idss Drain-Source Cut-off Current
0.2 1.5mA
10 mA
25 V
-25 V
Maximum Drain Gate Voltage
25V
Configuration
Single
Mounting Type
Surface Mount
Package Type
TO-236AB
Pin Count
Dimensions
3 x 1.4 x 1mm
Length
3mm
+150 C
Height
1mm
-65 C
Width
1.4mm
5. STMicroelectronics BD680 PNP Darlington Transistor, 4 A 80 V

HFE:750, 3-Pin SOT-32
Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics
including General Purpose, Darlington, Power and High-Voltage devices in both
SMT and Through-hole packages.
Transistor Type
PNP
4A
80 V
Maximum Emitter Base Voltage
5V
Package Type
SOT-32
Mounting Type
Through Hole
Pin Count
Single
Minimum DC Current Gain
750
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
2.5 V
Maximum Collector Cut-off Current
0.2mA
-65 C
Dimensions
7.8 x 2.7 x 10.8mm
Length
7.8mm
+150 C
Width
2.7mm
Height
10.8mm
6. Toshiba 2SA1943N(S1,E,S) PNP Bipolar Transistor, 15 A, 230 V, 3-Pin

TO-3PN
Transistor Type
PNP
Maximum DC Collector Current
15 A
230 V
Package Type
TO-3PN
Mounting Type
Through Hole
150 W
35
Single
-230 V
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
+150 C
Length
15.5mm
Height
20mm
Dimensions
15.5 x 4.5 x 20mm
-3 V
Width
4.5mm
7. Sanyo SVC203C-TB-E Varactor Diode, 10.84pF min, 4.6:1

Tuning Ratio, 16V, 3-Pin CP
Variable-Capacitance Diode, Sanyo
Variable Capacitance Diodes, commonly known as

Varicap, Varactor or Tuning diodes, are useful in
many applications where a change in capacitance
derived from a change in voltage is required. They are suitable for use in a wide range
of application, including RF tuning, Voltage Controlled Oscillators and filters,
Frequency Synthesizers and Multipliers.
Application
Tuner
Minimum Diode Capacitance
10.84pF
Maximum Reverse Voltage
16V
Minimum Quality Factor
60
Minimum Tuning Ratio
4.6
Mounting Type
Surface Mount
Package Type
CP
Pin Count
Tuning Ratio Test Condition
1 9V
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Length
2.9mm
+125 C
Width
1.5mm
8. IXYS IXGH48N60B3, 280 A 600 V, 40kHz, 3-Pin TO-247

IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a

three-terminal power semiconductor device, noted
for high efficiency and fast switching. The IGBT
combines the simple gate-drive characteristics of
the MOSFETs with the high-current and low
saturation-voltage capability of bipolar transistors
by combining an isolated gate FET for the control
input, and a bipolar power transistor as a switch, in
a single device.
280 A
600 V
Maximum Gate Emitter Voltage
20V
300 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
Pin Count
Switching Speed
40kHz
Single
Configuration
Single
Length
16.26mm
Width
5.3mm
Height
21.46mm
Dimensions
16.26 x 5.3 x 21.46mm
+150 C
-55 C
9. Microchip DN2530N3-G N-channel MOSFET Transistor, 0.175

A, 300 V Depletion, 3-Pin TO-92
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from

Microchip are suited to applications requiring high breakdown voltage, high input
impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
MOSFET Transistors, Microchip
0.175 A
300 V
12
Maximum Gate Threshold Voltage
-3.5V
20 V
Package Type
TO-92
Mounting Type
Through Hole
Single
Pin Count
Channel Mode
Depletion
0.74 W
-55 C
Typical Input Capacitance @ Vds
300 pF@ 25 V
Typical Turn-Off Delay Time
15 ns
Transistor Material
Si
Typical Turn-On Delay Time
10 ns
Height
0.21in
Width
0.165in
+150 C
Length
5.2mm
Dimensions
0.205 x 0.165 x 0.21in
10.
Fairchild BC560CTA PNP Bipolar Transistor, 0.1 A, 45 V,
3-Pin TO-92
Small Signal PNP Transistors, 40 to 50V,
Fairchild Semiconductor
Bipolar Transistors, Fairchild
Semiconductor
Bipolar Junction Transistors (BJT) broad range

provides complete solutions for various circuit
application needs. Innovative packages are
designed for minimal size, highest reliability
and maximum thermal performance.
Transistor Type
PNP
Maximum DC Collector Current
0.1 A
45 V
Package Type
TO-92
Mounting Type
Through Hole
500 mW
110
Single
-50 V
-5 V
Maximum Operating Frequency
10 MHz
Pin Count
Length
5.2mm
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Base Emitter Saturation Voltage
-800 V
+150 C
Width
4.19mm
-650 V
Height
5.33mm
11.
Sanyo SVC203SPA-AL Varactor Diode, 12.64pF min,
2.5:1 Tuning Ratio, 16V, 3-Pin SPA
Variable-Capacitance Diode, Sanyo
Variable Capacitance Diodes, commonly known as Varicap, Varactor or

Tuning diodes, are useful in many applications where a change in
capacitance derived from a change in voltage is required. They are
suitable for use in a wide range of application, including RF tuning,
Voltage Controlled Oscillators and filters, Frequency Synthesizers and
Multipliers.
Application
Tuner
Minimum Diode Capacitance
12.64pF
Maximum Reverse Voltage
16V
Minimum Quality Factor
60
Minimum Tuning Ratio
2.5
Mounting Type
Through Hole
Package Type
SPA
Pin Count
Tuning Ratio Test Condition
3 8V
Dimensions
4 x 2.2 x 3mm
Height
3mm
Length
4mm
+125 C
Width
2.2mm
12.
NXP BSR57,215 N-channel JFET Transistor, 40 V, Idss 20
100mA, 3-Pin TO-236AB
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electronmobility transistor/ hetero-junction FET)
discrete semiconductor devices.
Channel Type
20 100mA
100 mA
40 V
-40 V
40V
Configuration
Single
<40
Mounting Type
Surface Mount
Package Type
TO-236AB
Pin Count
Dimensions
3 x 1.4 x 1mm
-65 C
Height
1mm
+150 C
Length
3mm
Width
1.4mm
13.
ON Semiconductor, MAC4DCNT4G, TRIAC, 800V 4A,
Gate Trigger 1.3V 35mA, 3-Pin DPAK
TRIACs
A range of TRIACs (Triodes for Alternating

Current is also known as Bidirectional
Thyristors). They are used in AC switching and
control applications with current ratings from
under 1A to 40A rms. A TRIAC makes a
convenient switch for alternating current circuit.
Rated Average On-State Current
4A
Mounting Type
Surface Mount
Package Type
DPAK
Maximum Gate Trigger Current
35mA
Repetitive Peak Reverse Voltage
800V
Surge Current Rating
40A
Pin Count
Maximum Gate Trigger Voltage
1.3V
Repetitive Peak Forward Blocking Voltage
800V
Maximum Holding Current
35mA
Dimensions
6.73 x 6.22 x 2.38mm
Length
6.73mm
Width
6.22mm
Height
2.38mm
Peak On-State Voltage
1.6V
Repetitive Peak Off-State Current
2mA
-40 C
+125 C
14.
NXP PMBFJ177,215 P-channel JFET Transistor, 30 V, Idss
1.5 20mA, 3-Pin SOT-23
P-channel JFET, NXP

JFET Transistors
A range of JFET (junction field-effect

transistor) and HEMT/HFET (high-electronmobility transistor/ hetero-junction FET) discrete semiconductor devices.
Channel Type
1.5 20mA
20 mA
30 V
30 V
30V
Configuration
Single
<300
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
Dimensions
3 x 1.4 x 1mm
Width
1.4mm
Height
1mm
+150 C
Length
3mm
-65 C
15.
Vishay 2N4393-E3 N-channel JFET Transistor, Idss 5
30mA, 3-Pin TO-206AA
N-channel JFET, Vishay

JFET Transistors
A range of JFET (junction field-effect
transistor) and HEMT/HFET (highelectron-mobility transistor/ heterojunction FET) discrete semiconductor
Channel Type
5 30mA
-40 V
-40V
Configuration
Single
100
Mounting Type
Through Hole
Package Type
TO-206AA
Pin Count
Dimensions
5.84 x 5.84 x 5.33mm
Height
5.33mm
Length
5.84mm
+200 C
-55 C
Width
5.84mm

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TUGAS 5

JURUSAN TEKNIK ELEKTRO

1. STMicroelectronics STGF3NC120HD, IGBT Transistor, 6 A 1200 V,

IGBT Discretes & Modules, STMicroelectronics

Maximum Collector Emitter Voltage

Maximum Gate Emitter Voltage

Maximum Power Dissipation

10.4 x 4.6 x 16.4mm

Minimum Operating Temperature

Maximum Operating Temperature

2. BTB12-600SWRG STMicroelectronics, TRIAC, 600V 12A, Gate Trigger

Rated Average On-State Current

Maximum Gate Trigger Current

Repetitive Peak Reverse Voltage

Surge Current Rating

Maximum Gate Trigger Voltage

Repetitive Peak Forward Blocking Voltage

Maximum Holding Current

10.4 x 4.6 x 15.9mm

Maximum Operating Temperature

Minimum Operating Temperature

Repetitive Peak Off-State Current

Peak On-State Voltage

3. Infineon IRLB3034PBF N-channel MOSFET Transistor, 343 A, 40 V, 3Pin TO-220AB

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Synchronous Rectifier MOSFET

MOSFET Transistors, Infineon (IR)

Maximum Continuous Drain Current

Maximum Drain Source Voltage

Maximum Drain Source Resistance

Maximum Gate Threshold Voltage

Minimum Gate Threshold Voltage

Maximum Gate Source Voltage

Maximum Power Dissipation

Number of Elements per Chip

Typical Input Capacitance @ Vds

10.67 x 4.83 x 9.02mm

Typical Turn-On Delay Time

Minimum Operating Temperature

Typical Gate Charge @ Vgs

Typical Turn-Off Delay Time

Maximum Operating Temperature

4. NXP BFT46 N-channel JFET Transistor, 25 V, Idss 0.2 1.5mA, 3-Pin

N-channel JFET, NXP

Idss Drain-Source Cut-off Current

Maximum Continuous Drain Current

Maximum Drain Source Voltage

Maximum Gate Source Voltage

Maximum Drain Gate Voltage

Maximum Operating Temperature

Minimum Operating Temperature

5. STMicroelectronics BD680 PNP Darlington Transistor, 4 A 80 V

Bipolar Transistors, STMicroelectronics

Maximum Continuous Collector Current

Maximum Collector Emitter Voltage

Maximum Emitter Base Voltage

Number of Elements per Chip

Minimum DC Current Gain

Maximum Collector Base Voltage

Maximum Collector Emitter Saturation Voltage

Maximum Collector Cut-off Current

Minimum Operating Temperature

7.8 x 2.7 x 10.8mm

Maximum Operating Temperature