1

Module 2 :
Diffusive heat and mass transfer

Lecture 10:
Simultaneous Mass Diffusion and
Reaction between wafers in Low
Pressure Chemical Vapor Deposition

NPTEL,IITKharagpur,Prof.SaikatChakraborty,DepartmentofChemicalEngineering

Mathematical Model for Mass Transfer with Chemical Reaction: Diffusion-Reaction

Equation

Writing general mass balance

In Out + Generation = 0
Shell mass balance on SiH2 (A)
Writing for component A, we have
N Ar (2lr )r N Ar (2rl )r + r + 2(2 rr rA ' ') = 0
where NAr is the flux of A at r and rA '' is the rate of reaction

NPTEL,IITKharagpur,Prof.SaikatChakraborty,DepartmentofChemicalEngineering

(10.1)

The factor two in the last term of the balance equation implies that the deposition is been carried
out on both wafer faces. Dividing equation (10.1) by 2rl and taking limit r 0 we get

1 d(N Ar r ) 2
= rA ' '
r dr
l

(10.2)

Now, for binary diffusion (A&B) the molar flux is given by

N Ar = c D AB

dx A
+ x A (N Ar + N Br )
dr

(10.3)

where DAB is the diffusivity of A in B

For every molecule of A diffusing in, however, one molecule of B diffuse out. This is the case of
equimolar counter diffusion. For which we can write

N Ar = N Br
hence equation (10.3) becomes

N Ar = c D AB

dx A
dr

(10.4)

Assuming constant c (which means that P/RT = const, for ideal gas)

N Ar = D AB

dc A
dr

Also, for first order reaction

NPTEL,IITKharagpur,Prof.SaikatChakraborty,DepartmentofChemicalEngineering

(10.5)

rA ' ' = k C A

(10.6)

Using equations (10.5) and (10.6) in (10.2) we get

dc
d r A
1 dr
r
dr

2k c A = 0
D AB l

(10.7)

Note that equation (10.7) can also be derived using General Mass balance equation.
Boundary Conditions
cA = cA0 at r = Rw

dc A
= 0 at r = 0
dr
Defining dimensionless quantities

cA
r
and J =
c A0
Rw

Then after inserting the dimensionless quantities in equation (10.7), we get

d
d J
1 dJ
J
dJ

2 = 0
1

where 1 =

2kR w 2
DAB l

(10.8)

[which is analogous to N in equation for rectangular fin]

NPTEL,IITKharagpur,Prof.SaikatChakraborty,DepartmentofChemicalEngineering

For equation (10.8) the new B.Cs are

At J = 0

d
= 0 and
dJ

At J = 1 = 1
Then the solution to equation (10.8) is given by

= AIo (1 J ) + BK O (1 J )
Where
Io is a modified Bessel function of the first kind of order zero and;
Ko is a modified Bessel function of the second kind of order zero

NPTEL,IITKharagpur,Prof.SaikatChakraborty,DepartmentofChemicalEngineering

(10.9)

Fig.10.2 Bessel function of zero order

Since Ko (0) therefore B = 0
Then equation (10.14) becomes

cA IO (1 J )
=
cA0
IO (1 )

(10.10)

Effectiveness factor

Fig.10.3 Temperature and Concentration gradients in porous catalyst particle

NPTEL,IITKharagpur,Prof.SaikatChakraborty,DepartmentofChemicalEngineering

Since concentration and temperature varies from point to point within a catalyst particle, shown
in Fig.(10.3), the rate of reaction varies accordingly. In other words, we can say that the
effectiveness of the catalyst varies within the particle.
For this purpose, the term effectiveness factor , which can be defined as the ratio of the
actual rate of reaction for the particle as a whole to the intrinsic rate at the surface conditions, cAs
and Ts. In terms of reactant A

Actual dissipation rate

deposition rate if c A was equal to c A o throughout inter Wafer space
( N Ar )r = R

( 2R w l )
2R w 2 ( rAo '')
w

(10.11)

Adjusting the parameters and using dimensionless quantities

d

dJ J =1
=2
12

(10.12)

Therefore from equations (10.10) and (10.12), we get

2 I1 (1 )

1IO (1 )

NPTEL,IITKharagpur,Prof.SaikatChakraborty,DepartmentofChemicalEngineering

(10.13)

k
w
o
L
,B
A
D
h
g
i
H

Fig. 10.4 Deposition of film thickness for different

NPTEL,IITKharagpur,Prof.SaikatChakraborty,DepartmentofChemicalEngineering