RESISTIVITY PROBE NO. 301 application note Veco ‘oO ® 4 point resistivity measurements: a primer Tha purpose of this application note is to acquaint the reader with some of the basic principles of Four Point Resistivity Measure- ments. Resistance has become a popular parameter in characteriz- ing films, coatings and semicon- ductor waters. One reason for this, is that resistance is a convenient link between the physical charac- teristics of a surface and its elec- trical characteristics: Resistance — Elect Votage Curent Physical — (Chatacteriaues Material Geometry Sheet Resistance In its simpiest form, resistance is the ratio between voltage and Current or the product of resistivity and geometry. Resistance — Res Geo Voll~ Current For the slab of resistive material shown axy= Revi ‘ Figure 1 It is often useful to associate layer thickness, t, with resisti p, in characterizing a surtace This is because the thickness is often uniform across the entire surface while the length and width are geometric factors which can be varied fyfoRg tow ut The term pit is known as Sheet Resistance. Aithough strictly ‘speaking, the unit of measure for ‘sheet resistance is ohms, the term ohm/square is more commonly used. This is because dividing / by w is equivalent to partitioning the surface area of the resistor into squares of side w placed end to end along the length, For ex- ample, in Figure 1 for/= 3w, the ‘surface area of the resistor is 3 squares as shown, On a given layered surface, a resistor with 6 squares of surface area has twice the resistance of a resistor oc- cupying 3 squares of surface no matter what combination of length and width are used in their implementation. Four Point Measurement One problem ignored in the analysis of the two point measure ment in Figure 1, is the contact resistance between the electrical circuitry and the resistive siab being measured. The contact re- sistanoge is in series with the e tance to be measured. This is shown schematically in Figure 2 Resistors r,,r2 are not necessarily equal and aré predominantly due tocontact resistance. Reducing and r, would reduce the meaeure- ment error proportionately. Unfor- tunately, methods of reducing contact resistance often nave un- Gesirable side effects. For exam- ple, increasing contact force reduces resistance but can cause surface damage. ‘The four point technique over- comes these problems by intro- ducing two additional contacts for voltage sensing as snown 5 a fe — Vien eneeh oratitta ie R Figure 2At first glance it would appear that the addition of two more con- tacts doubles the problem by adding additional sources of con- This is not the case however, since the current flowing through the voltage sensing device is neg- ligible because of its high imped- ence. Thus, the voltage drops Cross fs, f. can be ignored, For example, the input impedence of the Veeco Four Point Probe Volt- age Sensor is typically 10°2 ohms. Geometric Factors The resistance measurement used to characterize a surface layer is essentially a Vil measure- ment. Most resistivity probes will report sheet resistance, resistivity and thickness. It is important to realize that these parameters are calculated, not measured. For ex- ample, if elther resistivity or thick- fess is known, the other can be calculated using the relationship: Rs = Resistivity/Thickness The relationship between sheet resistance and V/I is more complex. Rs = Geometric Factor x Vil For the simple case of the resis- tive siao discussed earlier, the geometric factor is Wi. Recail that TW was related to the number of surface area squares of side W occupied by the resistor, In the more general case, the ‘current is not confined to a simple geometric path. Although four Point probe measurement tech- niques are still applicable, the re- lationship between Vil and sheet resistance becomes more obscure. A variety of geometric factors have been developed analytically. In each case, a num- ber of assumptions are required to simplify the analysis. These generally involve edge effects, probe spacing uniformity and sample thickness. Two of the most commonly used are Thick Samples Fi 2 cm w For Thickness (W) > 10 Probe spacing (S) Forw <.18 Thin Samples Ps = wna (Vi) n ic} 1% f2 Figure 4 eco, VEECO INSTRUMENT GROUP Terminal Drive, Plainview, NY 11803 » 516-349-8300RESISTIVITY PROBE NO. 302 application note Veeco the two-configuration technique in four point probe measurements The four-point probe technique of resistivity measurement volves bringing four, in-line, trically conducting pins into contact with 2 conducting sub- strate. A known currentis passed between two of the pins and a voltage measurement is made be- ‘tween the two remaining pins. The resulting vaiue of Vil can then be related to sheet resistance and bulk resistivity of the substrate if certain geometrical factors are known, anda standard theoretical model is applied. This procedure is generally referred to as the one-configuration technique. The relationships between W/l and re- sistivity are different if the con- ducting substrate is much thinner ‘of much thicker than the spacing between the pins of the four-point probe. Using the notation: W = substrate thickness (cm) bulk resistivity (Q-cm) pin spacing of four-point probe (cm) sheet resistance (0/2) Vil for current passing through probes 1 & 4 = Vil for current passing through probes 18 3 D = substrate diameter then in all cases: R, = pW. For large diameter substrates which are respectively thin and thick compared to probe spacing the following relationships hoia: Tremere wees) Thor scenes (25) These relationships are derived from models of current flow in an infinitely thin resistive sheet and a semi-infinite resistive siab of ma- terial, The above two extreme conditions may be combined and written as: W) 2 wY e- FS )aa Wy where, for thin substrates F = 1 and for thick substrates Wy _ 1.386 *(S) = We For intermediate substrate thick- ness (WW=6) the recommended values of F are given by ASTM and. are plotted in Figure 7 along with the extreme values given above. Also, provided by ASTM is a cor- rection factor for finite substrate diameter as a function of S/D. This is given in Table 1, and should replace the value of n/n 2 above. For most applications, sub- Strates are moderately thin and the formula Ry = (w/In 2)V/l is widely applied. However, the the retical arin w/in 216 not always agood one touse, especially near the edge of a wafer orf, asis often the case, the prove spacings have small random fluctuations when brought into contact with the substrate. Such fluctuations ‘can result from mechanical limita- tions in probe construction and from the manner in which the probe is brought into contact with the substrate. In such cases the two-configuration technique can be of considerable value. In the two-configuration tech- nique, the factor x/in 2is replaced by an'experimentally determined quantity denoted byk; .e., Ry =k VA. A determination of k is made by ‘measuring two values of Vil, denoted by R, and R,, corre: sponding to passing a known cur rent between pins 7 and 4 and 1 and 3 respectively, and measur ing the voltage between the re- maining two pins. The ratio of these two values, Ry/R., can be different from the theéretical value of 1.26 and its measured value is, related to k by an algorithm in the AP150 memory. By this means, considerably improved resistivity data may be obtained. Limits to the allowable values of R/R,, are built into the AP150. If the experi- mentally determined value of Fy! 1 lies outside the window: RAR, = 1.26 = 0.06 then a two-configuration error re- sulls. This erroriree window is applicabie for the majority of sub- strates encountered in practiceTABLE1 Correction Factor, F, as @ Function of the Ratio of Probe Spacing, S, to Slice Diameter, D SD Fy 0 4532 0.005 4531 0.010 4.528 0.015 4.524 0.020 4517 0.025 4.508 0.030 4.497 0.035 4.485 0.040 4.470 0.045 4.454 0.050 4.436 0.055 4ai7 0.060 4.395 0.065 4.372 0.070 4348 0.075 4.322 0.080 4.204 0.085 4.265 0.090 4.235 0.095 4.204 0.100 4A71 Figure 1 ‘CO GROUP VECO INSTRUME? Terminal Drive, Plainview, NY 11803 « 516-349-8300RESISTIVITY PROBE NO. 303 application note ecco ® the importance of proper probe head selection Four-point probe resistance measurements are a convenient method of characterizing the dop- ing of silicon wafers. Since there are a variety of different dopant levels and surface characteristics used in semiconductor process- ing, a variety of different prove heads may be used. For accurate and reliable measurements, the correct probe head must be chosen. Important points to con- siderin choosing a probe head for a specific application are the fol lowing: probe needle spacing needie tip material, needle tip re dius and probe force. Probe Needle Spacing Probe needle spacing is impor- tant to avoid making lengthy cal- culations with correction factors. The probe spacing should be at least twice the slice or layer thick- ness. The water diameter must also be taken into consideration. Generally, the smalier the diame- ter of the water, the smaller the probe spacing. For wafers larger than two inches in diameter, spac ing up to 0.0625 inches is usually used, Needle Tip Material The two materials used to fab- ricate the needle tips are tungsten carbide and osmium. Tungsten carbide is a durable material, but does not make good electrical contact with silicon. Osmium makes good electrical contact with silicon but, because it is 2 softer material, must be replaced more often. For most applications, tungsten carbide is used. Needle Tip Radius and Probe Pressure Choosing the needle tip radius and probe pressure is extremely important for accurate resistivity measurements. A combination of needies with small radii and heavy gram force may push the needles into the surface of the wafer. In cases of thin epitaxial films or shallow diffused layers. the probe would be pushed through the desired measured layer, into underlying layers result- ing in an incorrect reading. if the water to be measured was clean of oxide, the best contact to be made would be the needle point alone touching the surface of the water. Operation These probe head design con- siderations are importantin assur- ing reliable resistivity meas- urements. What happens during a reading is as follows: when the probe tip is Brought into contact with the substrate, the needles are pushed into the housing against springs. These springs are the pressure of the contact. This pressure is important to provide a low contact resistance between the prove tips and the sample surface. This test is referred to as a de- structive test because of the pos- sibility of mechanical and electrical damage to the wafer. This is another reason why the probe tio size and material must be matched to the semiconductor material being measured. The ob- jective in selecting a probe head is to consider the wafer and pre- vent damages on penetration of the surface being measured. Itis impractical to own a variety of heads for Veeco'’s AP150. Veeco encourages customers to send samples in order to deter- mine a match of the proper probe head and of accurate resistivity readings. At our faciity, we will test a variety of heads to best match the applicationTYPICAL PROBE HEAD SECTION VIEW ‘SPRING ADJUSTMENT SCREW ‘SPRING PROBE NEEDLE DIFFERENCE IN PROBE NEEDLE RADII EXAGGERATED FOR DEMONSTRATION PURPOSES? \ — 0920 IN oot IN —— ENLARGED DETAIL DRAVINGS NOT TD SCALE Terminal Drive, Plainview, NY 11803 * 516-349-8300RESISTIVITY PROBE NO. 304 application note eeco four-point probe measurements— geometrical considerations In the four-point probe tech- nique, substrate resistivity is mea- sured by passing a known current (I) through two pins in contact with the substrate surface, and me suring the voltage (V) between two other pins at different loca- tions on the surface. The pins are generally colinear butcan, in prin- Ciple, have any location’ on the substrate. From the known cur rent and measured voltage the substrate resistivity (p) or sheet resistance (R,) can be inferred if certain geometrical factors are known. The purpose of this note is to deduce the appropriate geo- metrical factors for the linear four- pon probe for thin ana thick substrates. The method consists of deter- mining the electrical potential of every point on the substrate sur- face when a current is injected at fone point and withdrawn at other. If this potential mapping is known, then the potential dif- ference between any two points on the surface can easily be de- termined in terms of the current, | the substrate resistance and the applicable geometrical factors. Clearly, the voltage “measuring device should have a very high input impedance so as not to dis- turb the potential distribution of the substrate. The potential map for a thin substrate can be calcu- lated analytically, and numerical computation is used for thick substrates. Thin Substrates Consider the thin conductive substrate shown in Figure 1 where positive current is _injecte through a pin of radius ro and spreads out uniformly in all direc- tions, The return path is assumed to be at a great distance from the pin. The surface potential dis- tribution can be calculated lows. The resistance, dR, of the annu- lar ring of substrate shown is: pot Rude sa” 2nd” Oe The entire current, I, passes through this annulus, so the volt~ age across itis given by: pxiengtn oR = Re ae 7 ee ee a The negative sign arises since the voltage falis as the radius in- creases. Integrating equation (2) from the tip radius to any radius 1) yields where Vp is the voltage applied to the pin. ff a second, identical pin with a potential of ~ Vp is applied fo the substrate a distance 2a from the first pin, as shown in Fig- ure 2, the surface potential dis. tribution due to this at a distance fp iS given by + 2 «4 The sum of V, and Vz gives the potential at any point, P, shown in Figure 2, where: ey in Von Vee Vem if the pin radii are exactly equal. From equation (5) it appears that whenever constant 6) an equipotential line on the sub- strate surface is traced out. Fur- thermore, when K > 1, the potential Vis positive. This corre- sponds to"the left-hand side of Figure 2. When K <1, V, is negative and lies to the right Hand side of Figure 2 The equipotentialiines given by equation (6) can be developed further by expending 1,, rp in terms of r and (by the Cosine rule) then transforming to cartesian co- ordinates. The resulting equipo- tentials are found to bé circular, with radii and centers determined K for any given value of a. Ex- plicitly, thé equipotentials are given by: o Thus an equipotential has a ra- dius given by: rads = a Vi [4 centered on the point: cone = a (La) x toontey = a [22] Figure 3 shows a sample of such equipotential ines for values of K between 0.0 and 0.8 which repre- sent negative values of V and lie on the right hand side of the fig- ure, The potential at any point is °given by: ao ‘Also shown in Figure 3 are dotted line circles centered on the y-axis which pass through the source and drain points T and 2. These sare everywhere perpendicular to the equipotential lines and thus represent lines of electric force and hence current flux through the thin substrate Returning to the four-point probe, let us introduce two more pins to the substrate with the pin numbers 2s shown in Figure 4. Curtentis injected at pin #1, with drawn at pin #4 and the voltage difference between pins #2 and #3 is measured. If all of the pin spacings are equal to S, and all have the same radius fo, then, from equation (5) Puen an #2 = 9 = Fe og, 3 2 Rig on Bn P96 ~ ay OO? o Potential atin #3 = 95 aa ‘The potential difference between pins #2 and #3 is then given by: an) yielding the well-known relation- ship between sheet resistance, R,, and VII for thin layers: ae oa) In the 2-configuration tech nique, current is injected and withdrawn from pins #1 and #3, and the voltage between #2 and #4 is measured as shown in Fig- ure 8. Again applying equa- tion (5): So: Yaeene ees on and: ice Itis usual to designate Vza/l by Ra and Va4/l by Re, Thus in the 2-con- figuration technique we have the ratio: Ay _ 2 logs? R” Toad This is the ratio which the AP 150 checks in the 2-configuration mode to ensure meaningful re- sults. If its measured value lies outside the range of 1.26 = 0.06 then an error is indicated. Thick Substrates When the substrate is thick compared to the pin spacing the Gaiculation of the equipotentials ceases to be analytical, but nu- merical results will be given. Fig- ure 6 shows a single pin injecting a curtent, |, into a semi-infinite substrate, The resistance of the hemispherical shell, radius 1, and thickness dris given by: = 1262 09) oxticiness _ 2 wea ae oo The potential across the shell due to current | flowing through it is: oat ae @ wee ) Integrating: vy : - fw & (2 wove 23) For a second pin with the reverse current flow: 1 gra) Alternatively’ winew-B(2-2) eo Ve lta) = = +2(2-1) a where pins 1 and 2 are at poten- tials +V, and —Vo respectively, Thus the total potential at any point P is given by: oe a Equipotential lines are given by: K = constant (28) A numerically generated figure of @ few equipotentials is given in Figure 7. Note that the equipoten- tials are no longer circular. Applying the above potential map to the case of the four-point probe we have for configuration a Figure 4) ae ) eo) ce : 2 (a - 5) z eo 2) For configuration b shown in Fig- ure 5 oy (4 os) 6) (7) Thus caution should be exercised when using the 2-configuration technique with thick substrates since Ry/R, can lie outside of the predetermined window (1.26.08)Configuration 8 ve \ Curent, |, Out ~— Po, current n D Semin, conaveting sera, Fioure 6 FIGURE? \VEECO INSTRUMENT GROUP Terminal Drive, Plainview, NY 11803 « 516-349-8300RESISTIVITY PROBE NO. 305 application note ‘eeco effects of variations in probe tip diameter and spacing on measurements of sheet resistivity using the four-point probe When a four-point probe is brought ntact with @ con- ducting or semi-conducting su face in order to measure sheet resistance, variations in probe tip contact area and probe spacing Tay affect the readings obtained Since the probe tips are rounded the apparent contact radius is ex: pected to be determined pri- marily by the tip radius of curvature, the loading force of the tip and the elasticity of the sub- strate. The effects of variation in tip contact radius are shown to be negligible for thin and thick sub- strates in both the one and two configuration methods. The effects of variation in pin spacing can be corrected for when measuring thin layer shee! resistance by the use of the two configuration technique. The technique is of less value for thick er substrates Thin Substrates —One and Two Con- figuration Techniques: Figure 1 shows the four pins of an in-line probe in contact with a thin substrate. The contact radii of the pins are given by Tor,-..foand the current enters the substra via pin 1 and leaves via pin 4 configuration (a). Tne potential pin 21s given by *): given by: Thus the effect of pin radius varia. tions cancels out totally which is extremely fortunate otherwise the method would be dominated by uncertainties in the contact area The same cancellation occurs in injected via pin 1 and withdrawn through pin 3 and the vol measured between gins 2 ar Note that the radii of the pins mea- suring the voltage do not appear in this treatment, and it is as- sumed that they are small com- pared to the pin spacing Thick Substrates —One and Two Configuration Techniques: Using the same notation snown in jure 1 to probe a thick substrate tecoentae se pins 2 and 3. in configuration (a), are given by * Hence @ Similarly, in configuration (b), tne pin contact radii do not enter into the axnression for Vou The Etfects of Unequal Pin Spacings: (i) Thin layers: Figure 2 shows the notation used in this section. The nominal pin Spacing is s and deviations from this are given by 8,2, 8,5 and gq each of which may De positive or negative. in exercising the two- configuration technique, the robe is held in a fixed position and electrical connections are changed. It is presumed that any values of the 8's thus remain con- stant during the measurement This enables the pin spacing vari- ations to be compensated for as will be shown In configuration (a) the poten- tials at pins 2 and 3 are given by® and using the notation Re = Vz3/l one has: 25+ ba + ba a) 0) Similarly, in configuration (b): eRe where Ry = Vaal Using equation (10) and keep- ing s S58 s0 thal the pare theses canbe expanded use the binomial theorem: ne sf wo sma) (Sani Meee er oC +85) (=) (GB) (5 Multiplying out to first order only in the 8s: 3) aaa | eryerer - 82 _ x) cha in( 2(2 -82=t2=b)) 8) Denoting: Bia ba ~ bu eA ce then the sheet resistance is given by: os n(2(e+3) Next, using equations (10) and (11) and similar algebra: one gets n(e(2+4)) © GG=-9) Equation (17) implies that the measured value of A, changes as the pin spacing changes tnrough the unknown quantity A. The latter can take on any positive or nege- tive value which is small com- pared to s. Note, however, that Using the two-configuration tech- nique to determine the ratio R,/Re yields a vaiue of A/e which can then be inserted into equation (17) to give @ more accurate value to R,. When A is zero (all pin soac- ings equal to s) equation (17) re- duces to the comman form ma 3) and R,/R, is equal to Ind fin 3, By inserting values of A cover- ing the range of +0.1s into equa- tions (17) and (18) a plot of corrected Ry vs Ra/R, can be generated and is shown in figure 3. This result is equivalent to that of Perloff 2, The curve of figure 3 is parameterized and storedin the ‘AP150 memory and is used to cor- tect the measured sheet resist- lance when the two configuration method is used. Thus the two configuration technique is a very powerful tool in obtaining accurate sheet resist- ances, especially when mapping a wafer surface where statistical fluctuations can arise from vari- able probe spacings. (ii) Thick layers: The two. configuration tech- nique does not appear to lend itselfto improvement of resistance measurement of thick, conduct- ing substrates. Furthermore, the ratio of Fg/R, tends to 1.5 (cf. 1.26 for thin layers) and lies out of the range where it can be employed in an automated way on a four point probe. Thus the procedure should be avoided when mea- suring thick substrates P Reo References: (1) Previous Application Note. Re- Sistivity probe Application Note #304. (2) Perloff Solid State Technology 2/81 po. 120.PNG lies i rere ff Te. “yk Ras: FIGURE + fl a FIGURE 2 k (Rak) 72 eae a 425 A30 FIGURE 3RESISTIVITY PROBE NO. 306 application note ecco ® particle emission and wafer contamination of the Veeco AP-150 automatic four-point resistivity probe Cleanliness plays a major role in the selection of semiconductor equipment for use in the wat fab. Due to the importance of par- ticle generation, Veeco has run article emission and wafer con- tamination studies on its AP-150 Automatic Four-Point Resistivity Probe The first tests determined the amount of particles emitted inside 1@ equipment. A Royca model 245 sniffing probe was placed in- Side the cabinet next to the stage linear-drive motor. The resistivity probe was prevented from com- ing in contact with the wafer. The AB-150 was programmed to do a 5 point test on a four inch water. The cycle time for one test was seventy-one seconds, forty-four of which had the door open. There were twenty such runs done. The amount of particles emitted averaged 1.1 particles/cublic foot of air withdrawn from the cabinet by the counter. When the system was shut down, the background count was 0.15 particles/cubic foot, See Figures 1 and 2 The second test determined the wafer contamination created dur ing testing. A new four-inch sili- con wafer was mapped prior to testing. The equipment used for mapping was the Aeronca Wafer Inspection System. A total count of 19 particles, 0.4 to 2.0 microns in diameter was recorded. The automatic probe was placed in the chamber with a mixing fan. The resistivity probe was pre- vented from making contact with was cleared of parti- ing run was done for 60 seconds. Again the AP-150 was tun doing a 5 point resistivity test. The test was simulated 51 tim To determine the generation rate the following formula was used CE + kal K = generation rate c measured conc. of particles in chamber F = flow rate of air removed by counter (1 cubic fmin.) k = the value of the loss constant (0.028 ttimin) 1@ chamber's interior sur- face area (dd sq, ft.) i = 2partlest? (1feminus + 0.028 mint (8) K = Spartciesimn A The water mao showed an in. crease of 15 particles as a result ofthe 51 simulated resistivity runs. As a result, the particles gener- ated per cycle were’ 0.28 pa It can be concluded from the studies that the AP-150 exceeds- the requirements for a class 10 clean room and generates negli- gible wafer contamination. The Concentration of particles in the sample chamber was 2 particles: cubic footTOTAL PARTICLE COUNT TOTAL PARTICLE COUNT Pa PPP WEAN PARTICLE COUNT L oe Sas oo AUN HER BACKGROUND INSIDE CABINET FIGURE 1 s = = =, = = = oo QS O87 Lt 38 38 PARTICLE SIZE INSIDE CASE NEAR X Y STAGE MOTOR FIGURE 2 eco, ‘® (0 INSTRUMENT GROUP Terminal Drive, Plainview, NY 11803 + 516-349-8300RESISTIVITY PROBE NO. 308 application note ecco ® veeco’s ap-150 automatic resistivity probe software enhancements Veeco’s AP-150 automatic re- sistivity probe measures the resistance of substrates such as silicon for semiconductor man- facturing. Software modifica- tions have been made to enhance the utilization of the AP-180. The modifications are multiprogram storage; password restriction: ASTM geometric conversion: use of display mode in the program Mode; hard copy of programs; and hard copy of partitions Muttiorogram Storage The multiprogram storage penis storaue uf Up iu five sepa~ rate programs simultaneously. Each program is self-contained and can easily access any of the five partitions available. The pro- grams, labeled one through five, Gan be accessed or modified in the program mode. Partitions Partitions are user-defined areas on the wafer. Predetermined loca- tions within the boundaries of the area will be probed. These pre- determined points are illustrated in the AP-150 operator's manual. The user can select from several partition options and up to 150 probe sites per partition, depend- ing on waier size. The selected partition points, as well asthe pro: gram, can now be printed into a ard copy trom the internal orinter (Figures {and 2). This makes data collection and record keeping easier and more reliable. The pro- gram can now be displayed while Being modified by using the cis- play mode in the program menu (Figure 3) Geometric Conversion The ASTM (American Society for Testing Materials) geometric Conversion option for all testing has been added. This conversion factor is used to compensate for the variation in wafer diameter (D) and probe spacing (S). The data sheets to help determine the val- ue to be inserted in the program are found in the equipment man- ual. Some of this information ap- pears in Figure 4. Password Restriction The password restriction ap- plies to the program modifica. tions, There are two selections to be made: whether to have a pass- word and what the password is to be. The password format is one to eight characters, 0-9, and the decimal point. Any combin: can be used. When the chi ters are keyed into the system, an asterisk appears on the display to indicate each character of the Password entered. This will help to keep the password a secret. As a result, when the passwor tion is chosen (Figure 5), a oro: gram can only be modified when the correct password is known (Figure 6) 0 INSTRUMENTS, AP-150 PROGRAM 4 4-INCH 5-PTS vil onm| TYPE NO PENET NO COI REMOTE OFF PRINT NO CT 0.995 Figure 2 PARTITION PRINT-OUT PARTITION 1 18 19) 20 21 2a) 42. 43 44 4547 122 123 124 327 170 471 172 175 186 187 188Figure 3 PROGRAM DISPLAY PROGRAM 1 4-INCHES 5-PTS Vil ohm TYPINGNO — PENETNO —-2-CONFIGURATION NO. REMOTE OFF = PRINTNO—- CORR-FACT 0.995, Figure 4 Geometry Corrections Figure 5 PASSWORD OPTION ETTINGS: PRINT yes no SERVICE HEAD: yes no | PASSWORD’ yes no Figure 6 PASSWORD PROGRAM DISPLAY PROGRAM MENU 7 PASSWORD: CONFIGURE: EXIT. probe data | specify promats profile misc remote DEFAULT | Yeocs) VECO INSTRUMENT GROUP Terminal Drive, Plainview, NY 11803 + 516-349-8300