Documentos de Académico
Documentos de Profesional
Documentos de Cultura
MISFET
Lecture 26-29
MISFET: Introduction
EEE C381
Fermi Level
Potential barrier
MOSFET
VG
VG-VD
N-channel MOSFET
MOS Capacitor
10
11
V<0
12
13
n0 ni e EF E i ) / kT ; or
EF Ei kT ln
no
qF
ni
14
Inversion Region:
Lecture-27
15
Strong Inversion:
s = 0: Flat-band condition
F > s > 0: Depletion of holes
(bands bend downwards)
s = F : intrinsic
2F >S > F: weak Inversion
S =2F: STRONG INVERSION
17
Surface Charge:
Electron and hole concentrations at any position x within the
semiconductor is given by:
n( x) n0e
q ( x ) / kT
p( x) p0e q ( x) / kT
18
2kT
Es
e
qLD
q
s
kT
qs n0
1 e
kT p0
q s
kT
qs
1
kT
1/ 2
s kT
whereLD 2
q p0
Debye length : distance over which significant charge
separation can occur.
19
Qs increases as s
2kT
Es
e
qLD
q
s
kT
n0
qs
e
kT
p
0
qs
kT
qs
1
kT
1/ 2
20
21
= -qNAW
Positive charge balances
negative charge
Qm = -Qs
= -(-qNAW +Qn)
Qm = qNAW -Qn)
Charge Density
22
Width of inversion
layer<10 nm thus is
neglected in sketching
the E
Electric Field
Applied Voltage(V)
= across the
insulator(Vi)
+
across the depletion
region in sc (s )
Electrostatic potential
23
Qd qN AWm 2 s qN AF
(assuming Qs Qd)
24
Capacitance-Voltage Characteristics
(ideal MOS structure)
Lecture-28
Cd Ci
C
Cd Ci
Ci
i
d
and Cd
Voltage independent
s
W
Voltage dependent
i(SiO2) = 3.9 0
s(Si) = 11.8 0
25
26
27
Inversion
VG : more +ve
Depends on frequency: LF (1-100Hz) or HF (~1 MHz)
w.r.t generation-recombination rate of the minority
carriers in inversion layer.
VG: varied rapidly: Cd do not contribute; Cd
Cdmin.
Hence C will remain Cmin
28
D
13
D ~ 10 s
Permittivity
Very small for majority
carriers
29
30
31
32
33
Qi C / cm Qm Qot Q f Qit
to induce an equivalent ve
charge in the SC.
34
VT VFB
Qd
2F
Ci
35
Threshold Voltage:
Qi Qd
VT ms 2F
Ci Ci
(-)
(-)
(+) n channel
(-) p channel
(+) n channel
(-) p channel
36
37
Example:
Lecture-29
38
Qd 2 s qN aF
1/ 2
2(11.8 8.85 10
14
1.6 10
19
10 0.407)
17
1/ 2
16.5 10 8
Qi Qd
VT ms 2F
Ci Ci
1.6 16.5
0.95
0.814 3.32V
4.31 4.31
39
no leakage current
Real gate insulator
I FN Eox
exp
Eox
40
Fowler Nordheim
tunneling
Direct tunneling
41
Impact Ionization
Positive feedback effect
42
Output Characteristics:
Qs
VG VFB s
Ci
Qs Qn Qd
(Qn Qd )
VG VFB
s
Ci
Qd
Qn Ci VG (VFB
s )
Ci
VT at threshold
43
When VD is applied
1
Qn Ci VG VFB 2F Vx
2q s N a (2F Vx )
Ci
Qn ( x) Ci VG VT Vx
44
Qn ( x) Ci VG VT Vx
I D dx n ZCi
ID
VD
VG VT Vx dVx
n ZCi
L
1 2
V
V
V
G T D 2 VD
45
n ZCi
ID
L
1 2
VG VT VD 2 VD
VD.( sat.) VG VT
I D ( sat.)
I D ( sat.)
n ZCi
1
2
VG VT VD ( sat.) VD ( sat.)
L
2
n ZCi
n ZCi
2
2
(VG VT )
VD ( sat.)
2L
2L
46
Channel conductance: g
Transconductance:gm
I D
g
VD
gm
I D
VG
VG const .
Z nCi
VG VT
L
VD const .
Z n Ci
VD
L
VD.(sat.) VG VT
g m ( sat.)
Z nCi
VG VT
L
47
48
Transfer characteristics:
49
50
Saturation region:
51