FUNDAMENTAL OF ELECTRONICS

ENGINEERING
SEM-II, 2013
B TECH QUESTION PAPER
UTTARAKHAND TECHNICAL
UNIVERSITY
(UTU)
Time: 3 Hours

Total Marks: 100

Attempt any four parts of the following:

1.

Define Semiconductor materials on the basis of energy band diagram with

example.

2.

How electron hole pairs are generated. Explain working of different forms of
semiconductors.

3.

Why Si is preferred over Ge for manufacturing of electronics devices. How

Semiconductors diode behave as switch.

4.

Explain the effect of temperature on I-V characteristics of p-n junction diode.

5.

Differentiate between extrinsic and intrinsic semiconductor on the basis of

impurity present in them.

6. Explain the working of Semiconductor diode at different biasing conditions, no

bias, forward bias & reverse bias condition.

Attempt any four parts of the following:

1.

Explain full wave bridge rectifier.

2.

Prove that efficiency of full wave rectifier is 81%.

3.

The reverse saturation current of a silicon diode in 3 nA at 27o C find(i) Reverse saturation current at 82o C.
(ii) Forward current at 82o C if forward voltage applied is 82o C.

4.

Sketch Vo for the circuit shown below D1 and D2 are silicon diodes.

5.

Determine Vo for network given below.

6.

Explain Voltage Doublers or Voltage Tripler with neat diagram.

Attempt any two parts of the following:

1.

(i) Explain Zener diode, draw its symbol and V-I characteristics.
(ii) In a Zener voltage Regulator find the range of RL and IL for Load voltage to be
constant.

2.

Draw a Voltage Regulation that will maintain an output voltage of 20V across a
1K load with an input that will vary between 30 and 50 V. That is determining
the proper value of series Resistance (Rs) and maximum current IZM.

3.

Explain Zener Diode application as shunt regulator.

Attempt any two parts of the following:

1.

(i) Derive relation between & of transistor, also calculate for given = 0.95.
(ii) Explain potential divider biasing of transistor.

2.

(i) Explain working of npn transistor at no bias and active mode condition.
(ii) What is close loop non inverting amplifier, derive expression for it.

3.

(i) The BJT amplifier has hfe = 100, VBE = 0.007 V, ICO = 0. Calculate the value of
R1 and RC. Such that IC =1 mA and VCE = 2.5V.

(ii) For the following, as shown in the following, determine the output voltage v o if
the input voltage vi = 1.2 V.

Attempt any two parts of the following:

1.

(i) Write down characteristics of ideal OP-AMP.

(ii) What is close loop non inverting amplifier, derive expression for it.

2.

(i) Convert the following numbers:

(a) (4021.25)10 = ( )2
(b) (101010.10)4 = ( )8
(c) (23.AB)16 = ( )2
(d) (111011)2 = ( )gray code
(v) (23.53)10 + (23.58)8 = ( )10
(ii) Minimize the following Boolean function and draw its logic diagram using
minimum universal gates.

3.

Explain the construction and working of n-channel enhancement type MOSEFET.

Also draw its drain and transfer characteristics of the same.

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