No.2732 28C3998 NPN Triple Diffused Planar Silicon Transistor Very High-Definition Color Display Horizontal Deflection Output Applications Features + Righ speed (ty=100ns typ) + High breakdown voltage (Vogg=1500¥) + High reliability (adoption of BVP process) + Adoption of MBIT process Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vou 1500 Collector-to-Emitter Voltage Vogo 800 Emitter-to-Base Voltage Veo 6 ov Collector Current Ie 2 Ok Peak Collector Current igp 50 OR Collector Dissipation P 250 We Junction Temperature r, 150 °C Storage Temperature Tste 55 to +150 Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current I, 1.0 mA Collector Sustain Voltage Yoro(sus) 800 v Bmitter Cutoff Current — Inso, 1.0 mh Collector Cutoff Current I¢p icp=800V,Ip=0 10 pA DC Current Gain beet) Vgpe5v,1g=1-08 8 30 bpp(2)— Vop=5¥, Ig 4 8 C-E Saturation Voltage — Vog(sat) Ic=20A,Ipr5A BOY BE Saturation Voltage Var(sat) Zc=20A,Ip=5A 15 0O«WY Storage Time tte Tg=128,T, 3.0 ps ee Fall Tine te JoF 2h Ty 0.2 ps Tyres Switching Time Test Circuit Package Dimensions 2048 (unit mm) eee tea weir ae a bat q $h=S— 1 par ‘Unit (resistance: eepacitance:F) i Pan &? Bmittor aS 4 ©? collector 5? Bese sano : 90-281 SANYO Electric Co., Lt Ula kegaetus el! Sn ea ene ics PAR uo) ils Ni58MO,7S No.2732-1/32S¢3998 bre — ic : take : & fe * ic i a E | i EEE glo s4 fea Cotteclor-to-tuttter VoLtage, tog = coltector Current tg = A oe Le Ic I tc = Vee i 7 AE pei 3 / ag fe gs B I u j ee a onl 8 58a ge SH ai t iv 18 x % br = oe oi To T Colieetor Current Je ave to-Buitter WoltesevYgp =V i we - SW = lap a 2 ' & _ me 4 a a ge a 2 z é | con — a] a a appt 4 “ 15, 16 Collector Current Ig Base Current Igo ~ A Forward Bias A S O Reverse Bias A SO ene 1 »9| Zo, Conlector Current,Ig = & oo! 10 700 15 Collector-to-Britter Voltsse Veg - V . = ao, : Single poise i. SC £ é 5 10 7 g im J Coutector-to-Enitter Sustain Voltage, Vogy(ous) - ¥ No.2732-2/328C3998 Pc = Te 8 & g 8 co oor 1% ‘Apbient Tonperature,ta ~ °C W Hio products descrived or contsned hersin are intended for use in suigieal implants, Me-support systems, ‘eerospace equipment, nuclear power control systems, vehicles, disaster/orime-prevention squpment and the tke, the falure of which may direct or indirect cause jury, death or property loss W Anyone purchasing any products desorbed or contained hersin for an above-mentioned use shalt © Accept full responsibilty and indemnity and dafend SANYO ELECTRIC CO, LTD. its afflates, ‘subsidiaries and distroutors and all their officers and employees, jointly and several, against any and al claims and ligation and all damages, cost and expenses associated with such use ® Not impose any responsibiay for any faut or noglgence which may be cited in any such claim or ltgation on SANYO ELECTRIC CO, LTD, its aifliates, subsidaries and dstrbutors o: ary of their officers and employees pint oF several Wivformaton (including orout dagrams and clout parameters) harein is for example ony; itis not gustan ‘eed for volume profuction. SANYO belaves information herein iS accurate and relablo, but no guarantees, ‘ade or impled regaring its use or any infragoments of intellectual property rights or other rights of thed partes, No.2732-3/3,