PD - 95552B

IRLR2908PbF
IRLU2908PbF

HEXFET Power MOSFET

Features
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Advanced Process Technology

Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

VDSS = 80V
RDS(on) = 28m

ID = 30A

Description
This HEXFET Power MOSFET utilizes the latest processing techniques
to achieve extremely low on-resistance per silicon area. Additional features
of this HEXFET power MOSFET are a 175C junction operating temperature,
low RJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRFU series) is
for through-hole mounting applications. Power dissipation levels up to 1.5
watts are possible in typical surface mount applications.

I-Pak
D-Pak
IRLR2908PbF IRLU2908PbF

Absolute Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

39

ID @ TC = 100C

Continuous Drain Current, VGS @ 10V (See Fig. 9)

28

ID @ TC = 25C

Continuous Drain Current, VGS @ 10V (Package Limited)

30

IDM

Pulsed Drain Current

150

PD @TC = 25C

Maximum Power Dissipation

120

VGS

Linear Derating Factor

Gate-to-Source Voltage

0.77
16

W/C
V

180

mJ

EAS

EAS (tested)

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

IAR

Avalanche Current

EAR
dv/dt
TJ
TSTG

See Fig.12a,12b,15,16

h
Peak Diode Recovery dv/dt e

A
mJ
V/ns
C

2.3
-55 to + 175

Operating Junction and

Storage Temperature Range
Soldering Temperature, for 10 seconds

Parameter
RJA

Junction-to-Case
Junction-to-Ambient (PCB Mount)

RJA

Junction-to-Ambient

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250

Repetitive Avalanche Energy

Thermal Resistance
RJC

j

300 (1.6mm from case )

Typ.

Max.

Units

1.3

C/W

40

110

1
10/01/10

IRLR/U2908PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

80

VDSS/TJ

Breakdown Voltage Temp. Coefficient

0.085

V/C Reference to 25C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

22.5

28

25

30

VGS = 0V, ID = 250A

VGS = 10V, ID = 23A
VGS = 4.5V, ID = 20A

f
f

VGS(th)

Gate Threshold Voltage

1.0

2.5

VDS = VGS, ID = 250A

gfs
IDSS

Forward Transconductance

35

VDS = 25V, ID = 23A

Drain-to-Source Leakage Current

20

VDS = 80V, VGS = 0V

250

200

nA

VGS = 16V

nC

ID = 23A

IGSS

Gate-to-Source Forward Leakage

VDS = 80V, VGS = 0V, TJ = 125C

VGS = -16V

Gate-to-Source Reverse Leakage

-200

Qg

Total Gate Charge

22

33

Qgs

Gate-to-Source Charge

6.0

9.1

VDS = 64V

Qgd

Gate-to-Drain ("Miller") Charge

11

17

VGS = 4.5V

td(on)

Turn-On Delay Time

12

tr

Rise Time

95

ID = 23A

td(off)

Turn-Off Delay Time

36

RG = 8.3

tf

Fall Time

55

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

6mm (0.25in.)
from package
and center of die contact
VGS = 0V

ns

VDD = 40V

VGS = 4.5V
nH

Between lead,

G
S

Ciss

Input Capacitance

1890

Coss

Output Capacitance

260

VDS = 25V

Crss

Reverse Transfer Capacitance

35

= 1.0MHz, See Fig. 5

Coss

Output Capacitance

1920

VGS = 0V, VDS = 1.0V, = 1.0MHz

Coss

Output Capacitance

170

VGS = 0V, VDS = 64V, = 1.0MHz

Coss eff.

Effective Output Capacitance

310

VGS = 0V, VDS = 0V to 64V

pF

Diode Characteristics
Parameter

Min. Typ. Max. Units

IS

Continuous Source Current

ISM

(Body Diode)
Pulsed Source Current

VSD

(Body Diode)
Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

c

39

150

showing the
integral reverse

1.3

p-n junction diode.

TJ = 25C, IS = 23A, VGS = 0V

75

110

ns

210

310

nC

Conditions
MOSFET symbol

TJ = 25C, IF = 23A, VDD = 25V

di/dt = 100A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes through are on page 11

HEXFET is a registered trademark of International Rectifier.

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IRLR/U2908PbF
1000

1000

100

BOTTOM

10

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V

2.5V
1

0.1

100
BOTTOM

VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V

2.5V

10

20s PULSE WIDTH

Tj = 175C

20s PULSE WIDTH

Tj = 25C
0.1

0.01
0.01

0.1

10

0.01

100

10

100

VDS, Drain-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

60
G FS , Forward Transconductance (S)

ID, Drain-to-Source Current ()

0.1

100

T J = 175C
T J = 25C

10

VDS = 25V
20s PULSE WIDTH
1
2

VGS , Gate-to-Source Voltage (V)

TJ = 25C

50
40

T J = 175C

30
20
10

VDS = 10V
20s PULSE WIDTH

0
0

10

20

30

40

50

60

ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics

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Fig 4. Typical Forward Transconductance

vs. Drain Current

IRLR/U2908PbF
100000

VGS , Gate-to-Source Voltage (V)

ID= 23A

Coss = Cds + Cgd

10000

C, Capacitance(pF)

5.0

VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd

Ciss
1000

Coss
100

Crss

4.0

VDS= 16V

3.0

2.0

1.0

0.0

10
1

10

100

10

15

20

25

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000

100.00

ID, Drain-to-Source Current (A)

1000.00

ISD, Reverse Drain Current (A)

Q G Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

T J = 25C

1.00

VGS = 0V

0.10
0.2

0.4

0.6

0.8

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100

T J = 175C

10.00

1.0

1.2

1.4

1.6

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

VDS= 64V
VDS= 40V

1.8

100sec
10
1msec
1

10msec

Tc = 25C
Tj = 175C
Single Pulse
0.1
1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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IRLR/U2908PbF
40
35

ID, Drain Current (A)

30
25
20
15
10
5

ID = 38A
2.5

VGS = 4.5V

2.0

(Normalized)

RDS(on) , Drain-to-Source On Resistance

3.0

1.5

1.0

0.5

0.0

25

50

75

100

125

150

175

-60 -40 -20 0

T C , Case Temperature (C)

20 40 60 80 100 120 140 160 180

T J , Junction Temperature (C)

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 10. Normalized On-Resistance

vs. Temperature

Thermal Response ( Z thJC )

10

D = 0.50
0.20
0.10

0.1

0.05
0.02
0.01

P DM
t1

0.01

SINGLE PULSE
( THERMAL RESPONSE )

t2
Notes:
1. Duty factor D =
2. Peak T

t1/ t 2

J = P DM x Z thJC

+T C

0.001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRLR/U2908PbF

DRIVER

VDS

D.U.T

RG
20V
VGS

+
V
- DD

IAS

0.01

tp

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
tp

EAS , Single Pulse Avalanche Energy (mJ)

400

15V

ID
9.3A
16A
BOTTOM 23A
TOP

300

200

100

0
25

50

75

100

125

150

175

Starting T J , Junction Temperature (C)

I AS

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

QG
QGS

QGD

2.5

VG

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator
Same Type as D.U.T.

50K
12V

.2F
.3F

D.U.T.

+
V
- DS

VGS(th) Gate threshold Voltage (V)

10 V

2.0

1.5

ID = 250A
1.0

0.5
-75 -50 -25

VGS

25

50

75 100 125 150 175 200

T J , Temperature ( C )

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 14. Threshold Voltage vs. Temperature

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IRLR/U2908PbF
1000

Avalanche Current (A)

Duty Cycle = Single Pulse

100

Allowed avalanche Current vs

avalanche pulsewidth, tav
assuming Tj = 25C due to
avalanche losses

0.01
10

0.05
0.10

0.1
1.0E-08

1.0E-07

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

EAR , Avalanche Energy (mJ)

200

TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 23A

150

100

50

0
25

50

75

100

125

150

Starting T J , Junction Temperature (C)

Fig 16. Maximum Avalanche Energy

vs. Temperature

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175

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav

IRLR/U2908PbF
D.U.T

Driver Gate Drive

D.U.T. ISD Waveform

Reverse
Recovery
Current

RG

dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test

P.W.
Period
VGS=10V

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

D=

Period

P.W.

VDD

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs

VDS
VGS
RG

RD

D.U.T.
+

-VDD

10V
Pulse Width 1 s
Duty Factor 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on)

tr

t d(off)

tf

Fig 18b. Switching Time Waveforms

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IRLR/U2908PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

EXAMPLE: T HIS IS AN IRFR120
WIT H ASS EMBLY
LOT CODE 1234
ASS EMBLED ON WW 16, 2001
IN T HE AS SEMB LY LINE "A"

PART NUMBER

INT ERNAT IONAL

RECT IFIER
LOGO

Note: "P" in assembly line position

indicates "Lead-Free"

IRFR120
116A
12

34

AS SEMB LY
LOT CODE

DAT E CODE
YEAR 1 = 2001
WEEK 16
LINE A

"P" in assembly line position indicates

"Lead-Free" qualification to the cons umer-level

OR

INT ERNAT IONAL

RECT IFIER
LOGO

PART NUMBER
IRFR120
12

AS SEMB LY
LOT CODE

34

DAT E CODE
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
P = DESIGNAT ES LEAD-FREE
PRODUCT QUALIFIED T O T HE
CONS UMER LEVEL (OPT IONAL)
YEAR 1 = 2001
WEEK 16
A = AS SEMB LY S IT E CODE

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRLR/U2908PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

E XAMPLE: T HIS IS AN IRF U120
WIT H AS SEMBLY
LOT CODE 5678
ASS EMBLED ON WW 19, 2001
IN T HE AS SEMBLY LINE "A"

INT ERNAT IONAL

RE CT IF IER
LOGO

PART NUMBER
IRF U120
119A
56
78

ASSE MBLY
LOT CODE

Note: "P" in as s embly line pos ition

indicates Lead-Free"

DAT E CODE
YE AR 1 = 2001
WEEK 19
LINE A

OR
INT ERNAT IONAL
RECT IFIER
LOGO

PART NUMBER
IRF U120
56

ASS EMBLY
LOT CODE

78

DAT E CODE
P = DESIGNAT ES LE AD-FREE
PRODUCT (OPT IONAL)
YEAR 1 = 2001
WEEK 19
A = ASS EMBLY SIT E CODE

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/

10

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IRLR/U2908PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR

TRR

16.3 ( .641 )
15.7 ( .619 )

12.1 ( .476 )
11.9 ( .469 )

FEED DIRECTION

TRL

16.3 ( .641 )
15.7 ( .619 )

8.1 ( .318 )
7.9 ( .312 )

FEED DIRECTION

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.

Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25C, L = 0.71mH, RG = 25, IAS = 23A, VGS =10V. Part not recommended for use above
this value.
ISD 23A, di/dt 400A/s, VDD V(BR)DSS, TJ 175C.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2010

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