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TLE4726G
Bipolar IC
Overview
Features
2 0.75 A / 50 V outputs
Integrated driver, control logic and
current control (chopper)
Fast free-wheeling diodes
Low standby-current drain
Full, half, quarter, mini step
PG-DSO-24-13
Type
Ordering Code
Package
TLE4726G
On Request
PG-DSO-24-13
Description
TLE4726G is a bipolar, monolithic IC for driving bipolar stepper motors, DC motors and
other inductive loads that operate on constant current. The control logic and power
output stages for two bipolar windings are integrated on a single chip which permits
switched current control of motors with 0.75 A per phase at operating voltages up to
50 V.
The direction and value of current are programmed for each phase via separate control
inputs. A common oscillator generates the timing for the current control and turn-on with
phase offset of the two output stages. The two output stages in a full-bridge configuration
have integrated, fast free-wheeling diodes and are free of crossover current. The logic
is supplied either separately with 5 V or taken from the motor supply voltage by way of
a series resistor and an integrated Z-diode. The device can be driven directly by a
microprocessor with the possibility of all modes from full step through half step to mini
step.
Data Sheet
TLE4726G
10
11
Phase 1
OSC
GND
GND
GND
GND
Q11
R1
+ VS
Q12
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
20
21
Phase 2
Inhibit
GND
GND
GND
GND
Q21
R2
+VL
Q22
IEP00898
Figure 1
Data Sheet
TLE4726G
Function
1, 2, 23, 24
Digital control inputs IX0, IX1 for the magnitude of the current of the
particular phase.
IX1
IX0
Phase
Current
Example of
Motor Status
No current
1/3 Imax
Hold
2/3 Imax
Set
Imax
Accelerate
10
9, 12
11
14
13, 16
15
21
Inhibit input; the IC can be put on standby by low potential on this pin.
This reduces the current consumption substantially.
22
Data Sheet
TLE4726G
+ VL
14
4
+ VS
11
Oscillator
D11
D12
T11
10
T12
11
Phase 1
Inhibit
21
Phase 1
Functional
Logic
Phase 1
D14
T13
T14
Q12
R1
Inhibit
D21
20
12
10
D22
T21
T22
16
Q21
24
Phase 2
D23
21
23
Phase 2
22
Functional
Logic
Phase 2
T23
D24
T24
13
15
5-8, 17-19
GND
Data Sheet
Q11
1
D13
Figure 2
Q22
R2
IEB00899
Block Diagram
TLE4726G
TA = 40 to 125 C
Parameter
Supply voltage
Logic supply voltage
Z-current of VL
Output current
Ground current
Logic inputs
Symbol
VS
VL
IL
IQ
IGND
VIxx
Limit Values
Unit Remarks
min.
max.
52
6.5
Z-diode
50
mA
VL +
IXX ; Phase 1, 2;
0.3
VRX,
VOSC
Tj
Tj
Tstg
0.3
VL +
Inhibit
V
0.3
125
150
C
C
max. 10,000 h
50
125
Note: Stresses above those listed here may cause permanent damage to the
device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Data Sheet
TLE4726G
Operating Range
Parameter
Symbol
Limit Values
Unit Remarks
min.
max.
50
VS
VL
4.5
6.5
without series
resistor
Case temperature
TC
25
110
measured on
pin 5
Pdiss = 2 W
Output current
IQ
VIXX
800
800
mA
VL
IXX ; Phase 1, 2;
Supply voltage
Logic inputs
Inhibit
Thermal Resistances
Junction ambient
Junction ambient (soldered on a
35 m thick
20 cm2 PC boar
copper area)
Junction case
Rth ja
Rth ja
75
50
K/W PG-DSO-24-13
K/W PG-DSO-24-13
Rth jc
15
K/W measured on
pin 5
PG-DSO-24-13
Note: In the operating range, the functions given in the circuit description are fulfilled.
Characteristics
VS = 40 V; VL = 5 V; 25 C Tj 125 C
Parameter
Symbol
Limit Values
min.
typ.
max.
Current Consumption
from + VS
from + VS
IS
IS
0.2
16
0.5
20
mA
mA
from + VL
from + VL
IL
IL
1.7
18
3
25
mA
mA
Data Sheet
Vinh = L
Vinh = H
IQ1/2 = 0, IXX = L
Vinh = L
Vinh = H
IQ1/2 = 0, IXX = L
TLE4726G
Characteristics (contd)
VS = 40 V; VL = 5 V; 25 C Tj 125 C
Parameter
Symbol
Limit Values
min.
typ.
max.
IOSC
110
VOSCL
VOSCH
fOSC
18
1.3
2.3
25
40
V
V
kHz
Vsense n
Vsense h
Vsense s
Vsense a
200
420
700
0
250
540
825
300
680
950
mV
mV
mV
mV
IX0 = H; IX1 = H
IX0 = L; IX1 = H
IX0 = H; IX1 = L
IX0 = L; IX1 = L
Threshold
VI
IIL
IIL
IIH
2.3
(LH)
10
L-input current
L-input current
H-input current
1.4
(HL)
10
100
A
A
A
VI = 1.4 V
VI = 0 V
VI = 5 V
1.7
2.3
2.9
VInhhy
0.3
0.7
1.1
VLZ
6.5
7.4
8.2
IL = 50 mA
Oscillator
Output charging
current
Charging threshold
Discharging threshold
Frequency
COSC = 2.2 nF
VInh
(LH)
Threshold
VInh
(HL)
Hysteresis
Internal Z-Diode
Z-voltage
Data Sheet
TLE4726G
Characteristics (contd)
VS = 40 V; VL = 5 V; 25 C Tj 125 C
Parameter
Symbol
Limit Values
min.
typ.
max.
0.3
0.5
0.9
1
0.6
1
300
1.3
1.4
V
V
A
V
V
IQ = 0.5 A
IQ = 0.75 A
VQ = 40 V
IQ = 0.5 A
IQ = 0.75 A
0.9
1.2
IQ = 0.5 A;
Power Outputs
Diode Transistor Sink Pair
(D13, T13; D14, T14; D23, T23; D24, T24)
Saturation voltage
Saturation voltage
Reverse current
Forward voltage
Forward voltage
Vsatl
Vsatl
IRl
VFl
VFl
VsatuC
Saturation voltage
VsatuD
0.3
0.7
Saturation voltage
VsatuC
1.1
1.4
Saturation voltage
VsatuD
0.5
Reverse current
Forward voltage
Forward voltage
Diode leakage current
IRu
VFu
VFu
ISL
1
1.1
1
300
1.3
1.4
2
A
V
V
mA
charge
IQ = 0.5 A;
discharge
IQ = 0.75 A;
charge
IQ = 0.75 A;
discharge
VQ = 0 V
IQ = 0.5 A
IQ = 0.75 A
IF = 0.75 A
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at TA = 25 C and
the given supply voltage.
Data Sheet
TLE4726G
IED01655
40
IED01656
40
mA
mA
S, L
S, L
T j = 25 C
30
V S = 40V
30
XX = L
L
20
XX = H
20
XX = L
10
10
XX = H
S
0
10
20
30
V
VS
50
-25
25
50
75 100 C 150
Tj
QX
Operating Condition:
IED01657
800
VL
VInh
COSC
Rsense
= 5V
= H
= 2.2 nF
= 1
Load: L = 10 mH
R = 2.4
fphase = 50 Hz
mode: fullstep
mA
600
400
200
Data Sheet
-25
25 50
75 100 C 150
Tj
TLE4726G
IED01167
1.0
A
V Fl
V Fu
0.8
T j = 25 C
0.6
0.4
0.2
0.5
1.0
1.5
VF
12
Measured
at pin 5.
Ptot
10
P-DSO-24
8
6
P-DIP-20
4
0
-25
Data Sheet
10
TLE4726G
IED01661
0.8
mA
IXX 0.6
V L = 5V
0.4
0.2
0
0.2
0.4
0.6
0.8
-6
-5
-2
3.9
V
6
V IXX
f OSC
IED01663
V S = 40V
V L = 5V
COSZ = 2.2nF
25
20
15
-25 0
Data Sheet
11
TLE4726G
100 F
220 nF
L
H
10
11
3
21
14
11
VL
100 F
220 nF
VS
VS
Q11
Phase 1
Q12
Inhibit
TLE4726G
24
20
Q21
23
21
Q22
22
V L
V H
Phase 2
OSC
4
15
OSC VOSC
2.2 nF
Q
- Fu
12
-R
Ru
VSatl
16
13
- VFl
GND
5, 6, 7, 8
17, 18, 19, 20
10
R2
1
VSense
VSatu
- VFu
R1
1
VSense
GND
AES02301
Figure 3
Test Circuit
+5 V
+40 V
100 F
220 nF
1
2
3
Micro
Controller
21
24
23
22
10
14
VL
11
VS
Q11
11
Phase 1
Inhibit
Q12
TLE4726G
Q21
20
21
Phase 2
OSC
4
2.2 nF
100 F
220 nF
Q22
15
R2
1
10
R1
1
9
12
16
13
GND
5, 6, 7, 8
17, 18, 19, 20
AES02302
Figure 4
Data Sheet
Application Circuit
12
TLE4726G
Normal Mode
Accelerate Mode
10
11
Phase 1
i acc
i set
Q1
t
i set
i acc
i acc
i set
Q2
t
i set
i acc
Phase 2
20
21
H
L
H
L
H
L
IED01666
Figure 5
Data Sheet
Full-Step Operation
13
TLE4726G
Normal Mode
Accelerate Mode
10
H
L
11
H
L
H
L
Phase 1
i acc
i set
Q1
t
- i set
- i acc
i acc
i set
Q2
t
- i set
- i acc
Phase 2
H
L
20
H
L
21
H
L
t
IED01667
Figure 6
Data Sheet
Half-Step Operation
14
TLE4726G
Figure 7
Data Sheet
Quarter-Step Operation
15
TLE4726G
10
11
Phase 1
i acc
i set
i hold
Q1
i hold
i set
i acc
i acc
i set
i hold
Q2
i hold
i set
i acc
Phase 2
20
21
H
L
H
L
H
L
t
IED01665
Figure 8
Data Sheet
Mini-Step Operation
16
TLE4726G
V Osc
2.4 V
1.4 V
0
GND
0
V Q12
+ VS
V FU
V sat 1
t
V Q11
V satu D
+ VS
V satu C
t
V Q22
+ VS
t
V Q21
+ VS
Operating conditions:
VS
VL
L phase x
R phase x
V phase x
V Inhibit
V xx
Figure 9
Data Sheet
= 40 V
=5V
= 10 mH
= 20
=H
=H
=L
IED01177
Current Control
17
TLE4726G
Inhibit
L
V Osc
t
2.3 V
1.3 V
0
Oscillator
High Imped.
Oscillator
High Imped.
t
Phase Changeover
Phase 1
L
GND
N
0
t
V Fu
V Q11
Vsatu C
Vsatu D
+V S
High
Impedance
V Fl
V satl
High
Impedance
t
V Q12
+V S
High
Impedance
Phase 1
Operating Conditions:
= 40 V
VS
=5V
V
L phase 1 = 10 mH
R phase 1 = 20
1X
= L; 1X = H
t
Fast Current Decay
Slow
Current Decay
Fast
Current
Decay by
Inhibit
IED01178
18
TLE4726G
Ptot = 2 Psat + Pq + 2 Ps
where
Psat IN { Vsatl d + VFu (1 d ) + VsatuC d + VsatuD (1 d ) }
Pq = Iq VS + IL VL
V S i D t DON i D + i R t ON I N
IN
Iq
iD
iR
tp
tON
tOFF
tDON
tDOFF
T
d
Vsatl
VsatuC
VsatuD
VFu
VS
VL
IL
Data Sheet
19
TLE4726G
+V S
Tx1
Dx1
Dx2
Tx2
Tx3
Dx3
Dx4
Tx4
V sense
R sense
IES01179
Figure 11
Voltage and
Current at
Chopper
Transistor
Turn-ON
Turn-OFF
iR
iD
VS + VFu
VS + VFu
Vsatl
t D ON
t D OFF
t ON
tp
t OFF
t
IET01210
Figure 12
Data Sheet
20
TLE4726G
Application Hints
The TLE726G is intended to drive both phases of a stepper motor. Special care has
been taken to provide high efficiency, robustness and to minimize external components.
Power Supply
The TLE726G will work with supply voltages ranging from 5 V to 50 V at pin VS. As the
circuit operates with chopper regulation of the current, interference generation problems
can arise in some applications. Therefore the power supply should be decoupled by a
0.22 F ceramic capacitor located near the package. Unstabilized supplies may even
afford higher capacities.
Current Sensing
The current in the windings of the stepper motor is sensed by the voltage drop across R1
and R2. Depending on the selected current internal comparators will turn off the sink
transistor as soon as the voltage drop reaches certain thresholds (typical 0 V, 0.25 V,
0.5 V and 0.75 V); (R1 , R2 = 1 ). These thresholds are neither affected by variations
of VL nor by variations of VS .
Due to chopper control fast current rises (up to 10 A/s) will occur at the sensing
resistors R1 and R2 . To prevent malfunction of the current sensing mechanism R1 and
R2 should be pure ohmic. The resistors should be wired to GND as directly as possible.
Capacitive loads such as long cables (with high wire to wire capacity) to the motor should
be avoided for the same reason.
Synchronizing Several Choppers
In some applications synchrone chopping of several stepper motor drivers may be
desireable to reduce acoustic interference. This can be done by forcing the oscillator of
the TLE726G by a pulse generator overdriving the oscillator loading currents
(approximately 100 A). In these applications low level should be between 0 V and 1 V
while high level should be between 2.6 V and VL .
Optimizing Noise Immunity
Unused inputs should always be wired to proper voltage levels in order to obtain highest
possible noise immunity.
To prevent crossconduction of the output stages the TLE4726G uses a special break
before make timing of the power transistors. This timing circuit can be triggered by short
glitches (some hundred nanoseconds) at the Phase inputs causing the output stage to
become high resistive during some microseconds. This will lead to a fast current decay
during that time. To achieve maximum current accuracy such glitches at the Phase
inputs should be avoided by proper control signals.
Data Sheet
21
TLE4726G
Data Sheet
22
TLE4726G
Package Outlines
1.27
+0.0
7.6 -0.2 1)
8 MAX.
0.35 x 45
0.23
2.65 MAX.
2.45 -0.2
Package Outlines
0.2 -0.1
0.4 +0.8
0.35 +0.15
0.1
2)
10.3 0.3
0.2 24x
24
13
1
15.6 -0.4
1)
12
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area
P/PG-DSO-24-1, -3, -8, -9, -13, -15, -16-PO V01
Figure 1
PG-DSO-24-13
23
Dimensions in mm
Rev. 1.1, 2008-06-16
TLE4726G
Revision History
Revision History
Revision
Date
Changes
1.1
2008-06-17
Data Sheet
24
Edition 2008-01-04
Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
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