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Data Sheet
January 2002
Ordering Information
PART NUMBER
Features
3.3A, 200V
rDS(ON) = 1.500
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
PACKAGE
BRAND
D
IRF610
TO-220AB
IRF610
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
IRF610 Rev. B
IRF610
Absolute Maximum Ratings
IRF610
200
200
3.3
2.1
8
20
43
0.34
46
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
oC
oC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVDSS
200
VGS(TH)
25
250
3.3
100
nA
1.0
1.5
0.8
1.3
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
VGS = 20V
VGS = 10V, ID = 1.6A (Figures 8, 9)
VDS 50V, ID = 1.6A (Figure 12)
VDD = 100V, ID 3.3A, RG = 24, RL = 30
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
tf
Qg(TOT)
Qgs
Qgd
Input Capacitance
CISS
Output Capacitance
COSS
CRSS
LD
LS
RJC
RJA
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
12
ns
17
26
ns
13
21
ns
13
ns
5.3
8.2
nC
1.2
nC
3.0
nC
135
pF
60
pF
16
pF
3.5
nH
4.5
nH
7.5
nH
2.9
oC/W
80
oC/W
LD
G
LS
S
IRF610 Rev. B
IRF610
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
ISD
ISDM
MIN
TYP
MAX
UNITS
3.3
2.0
75
160
310
ns
0.33
0.9
1.4
VSD
trr
QRR
NOTES:
2. Pulse test: pulse width 300s, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 6.4mH, RG = 25, peak IAS = 3.3A.
5.0
1.0
ID, DRAIN CURRENT (A)
1.2
0.8
0.6
0.4
0.2
0
50
100
4.0
3.0
2.0
1.0
0
25
150
50
75
100
150
125
ZJC, TRANSIENT
THERMAL IMPEDANCE (oC/W)
10
0.5
1
0.2
0.1
PDM
0.05
0.02
0.1 0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
0.1
10
IRF610 Rev. B
IRF610
Typical Performance Curves
100
10s
10
100s
1ms
1
10ms
VGS = 10V
VGS = 8V
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
ID, DRAIN CURRENT (A)
VGS = 7V
2
VGS = 6V
1
VGS = 5V
DC
0.1
100
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
1000
20
4
VGS = 10V
VGS = 8V
VGS = 7V
2
VGS = 6V
1
0
4
TJ = 150oC
0.1
TJ = 25oC
VGS = 5V
VGS = 4V
2
10
10-2
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
6
VGS = 10V
3
VGS = 20V
2.4
4
6
ID, DRAIN CURRENT (A)
10
1.8
1.2
0.6
0
2
10
15
100
10
60
40
VGS = 4V
80
-60
-40
-20
20
40
60
80 100
IRF610 Rev. B
IRF610
Typical Performance Curves
400
ID = 250A
1.05
0.95
240
CISS
160
COSS
0.85
0.75
-60
320
1.15
C, CAPACITANCE (pF)
1.25
80
-40
-20
20
40
60
80
CRSS
1.5
1.2
TJ = 25oC
TJ = 150oC
0.9
0.6
0.3
102
5
10
2
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
TJ = 150oC
10
TJ = 25oC
1
0
2
3
ID, DRAIN CURRENT (A)
20
0.4
0.8
1.2
1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
ID = 3.2A
VDS = 100V
16
VDS = 40V
12
VDS = 160V
0
0
10
IRF610 Rev. B
IRF610
Test Circuits and Waveforms
VDS
BVDSS
L
tP
VARY tP TO OBTAIN
RG
VDS
IAS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01
tAV
tON
tOFF
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
RG
VDD
10%
10%
DUT
90%
VGS
VGS
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
0.2F
50%
PULSE WIDTH
10%
12V
BATTERY
50%
VDD
Qg(TOT)
SAME TYPE
AS DUT
50k
Qgd
0.3F
VGS
Qgs
D
VDS
DUT
0
Ig(REF)
0
IG CURRENT
SAMPLING
RESISTOR
VDS
ID CURRENT
SAMPLING
RESISTOR
IG(REF)
0
IRF610 Rev. B
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H4