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SPI21N10

SPP21N10,SPB21N10

Target data sheet

SIPMOS =Power-Transistor

Feature

Product Summary

N-Channel

VDS

Enhancement mode
=175C operating temperature
Avalanche rated

P-TO262-3-1

100

RDS(on)

85

ID

21

P-TO263-3-2

P-TO220-3-1

dv/dt rated

Type

Package

Ordering Code

Marking

SPP21N10

P-TO220-3-1 -

21N10

SPB21N10

P-TO263-3-2 -

21N10

SPI21N10

P-TO262-3-1 -

21N10

Maximum Ratings,at Tj = 25 C, unless otherwise specified


Parameter

Symbol

Continuous drain current

ID

Value

Unit
A

TC=25C

21

TC=100C

ID puls

84

EAS

130

dv/dt

Gate source voltage

VGS

20

Power dissipation

Ptot

104

-55... +175

Pulsed drain current


TC=25C

Avalanche energy, single pulse

mJ

ID =21 A , VDD=25V, RGS =25

Reverse diode dv/dt

kV/s

IS =21A, VDS=80V, di/dt=200A/s, Tjmax =175C

TC=25C

Operating and storage temperature

Tj , Tstg

IEC climatic category; DIN IEC 68-1

55/175/56

Page 1

2001-03-16

SPI21N10
SPP21N10,SPB21N10

Target data sheet


Thermal Characteristics
Symbol

Parameter

Values

Unit

min.

typ.

max.

Characteristics
Thermal resistance, junction - case

RthJC

1.5

Thermal resistance, junction - ambient, leaded

RthJA

100

SMD version, device on PCB:

RthJA
-

75

50

@ min. footprint
@ 6 cm 2 cooling area

1)

K/W

Electrical Characteristics, at Tj = 25 C, unless otherwise specified


Parameter

Symbol

Values

Unit

min.

typ.

max.

V(BR)DSS

100

VGS(th)

2.1

Static Characteristics
Drain-source breakdown voltage

VGS =0V, ID =1mA

Gate threshold voltage, VGS = VDS


ID = 44 A

Zero gate voltage drain current

IDSS

VDS =100V, VGS=0V, Tj =25C

0.01

VDS =100V, VGS=0V, Tj =125C

100

IGSS

100

nA

RDS(on)

tbd

85

Gate-source leakage current


VGS =20V, VDS=0V

Drain-source on-state resistance


VGS =10V, ID=-A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2

2001-03-16

SPI21N10
SPP21N10,SPB21N10

Target data sheet


Electrical Characteristics, at Tj = 25 C, unless otherwise specified
Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

tbd

tbd

S
pF

Dynamic Characteristics
Transconductance

gfs

VDS 2*ID *RDS(on)max ,


ID =-A

Input capacitance

Ciss

VGS =0V, VDS =25V,

tbd

tbd

Output capacitance

Coss

f=1MHz

tbd

tbd

Reverse transfer capacitance

Crss

tbd

tbd

Turn-on delay time

td(on)

VDD =50V, VGS=10V,

tbd

tbd

Rise time

tr

ID =21A, RG =13

tbd

tbd

Turn-off delay time

td(off)

tbd

tbd

Fall time

tf

tbd

tbd

tbd

tbd

tbd

tbd

tbd

tbd

V(plateau) VDD =17V, ID=21A

tbd

IS

21

84

ns

Gate Charge Characteristics


Gate to source charge

Qgs

Gate to drain charge

Qgd

Gate charge total

Qg

VDD =17V, ID=21A

VDD =17V, ID=21A,

nC

VGS =0 to 10V

Gate plateau voltage


Reverse Diode
Inverse diode continuous

TC=25C

forward current
Inverse diode direct current,

ISM

pulsed
Inverse diode forward voltage

VSD

VGS =0V, IF =21A

tbd

tbd

Reverse recovery time

trr

VR =50V, IF =lS ,

tbd

tbd

ns

Reverse recovery charge

Qrr

diF /dt=100A/s

tbd

tbd

nC

Page 3

2001-03-16

Target data sheet

SPI21N10
SPP21N10,SPB21N10

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Page 4

2001-03-16

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