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Operational Amplifier
FINAL PROJECT
Goal
The goal of this project is to design a CMOS operational amplifier
block to be used in a complex system-on-a-chip (SoC). The design
must meet the requirements and it should be optimized for
robustness, power, and/or speed.
Design Specifications
Gain >= 60 dB, Unity Gain frequency >= 60MHz, Phase Margin >=
45Deg, Offset <= 50uV, Dynamic Rage = +/-6.5V (for 10mV error), Slew
Rate >= 80 V/us. The power supply is +/-7.5V and the transistors are
from TSMC 0.35u HV process.
Introduction:
There are various parameters to be considered while designing any
circuit. The parameters that are to be considered when designing an
Op-Amp are described below.
Procedure:
The circuit contains two stages. The first is formed by the differential pair Q1-Q2
with its current mirror load Q3-Q4. Differential pair is biased using the current
source Q5. The transistor Q5 is fed by a reference current mirror IRef. The second
stage is comprised of transistor Q6 with its current source load Q7. The second
stage is used to improve the gain significantly. The two stage Op-Amp is expected
to produce a gain greater than 1000.
In order to design the Op-Amp with the specifications mentioned above, the
first step is to estimate the value of bias current from current source IRef. The
next step is to calculate the (W/L) ratios of the transistors in the circuit
PAGE 1
T-Spice Netlist:
* OPAMP test circuit for ECE523 design project
.lib 'hv15.l' TT_hva
.param IRef=1.5E-6
VDD
VDD
GND
DC
7.5V
VSS
VSS
GND
DC -7.5V
*
Rc 3 5 10K
CC 5 OUT 0.08pF
.ENDS OPAMP
* AC Characterization
PAGE 2
XOP12
CL12
Out12 GND
0.5PF
RF12
Out12 In2
10MEG
CF12
In2
GND
10MF
Vin12
In1
GND
DC
.AC
0V
AC
-1V
VDD
CL34
Out34 GND
0.5PF
RF34
Out34 In4
1M
Vin34
In3
PULSE (-5V
.Tran
1ns
GND
gnd OPAMP
5V
100ns
1ns
1ns
1us
2us)
3us
VDD
RF56
Out56 In6 1M
Vin56
In5
.DC
Vin56
0V
7.5V
0.01
.measure dc
PAGE 3
.measure dc
.measure dc
Power
.END
Schematic Diagram:
PAGE 4
Observations:
Slew Rate: In order to adjust the slew rate closer to 80 V/us, we need to change
the value of Resistor Rb. But, changing the Slew Rate effects the Offset
proportionally. Increasing the Slew Rate increases the offset and vice - versa.
Power Dissipation: The major factors for power dissipation is the current
source. In order to minimize power, the transistors are optimized and also Rb
helps to minimize the amount of current drawn from the source.
Offset: to adjust he offset the ratio of the transistors M6,M5,M4,M7 are adjusted .
the main idea is to keep the M6/M4 ratio twice that of the ratio of M7/M5. And
the transistors M1 and M2 must have half the size of transistor M5.
Phase Margin: Phase Margin can be adjusted by adjusting the value of Resistor
Rc.
Gain: Changing above parameters also effects the gain of the OP-AMP circuit.
Characterization Parameters for the Designed Operational Amplifier:
1. Gain = 71.3726 dB
2. Unity Gain Frequency = 69.9584MEG
3. Phase Margin = 50.7854
4. Offset = 1.3334u
5. DRL = -7.3181 v
6. DRH = 6.7152 v
7. Slew Rate Rise = 81.1603 V/us
8. Slew Rate Fall = -124.5736 V/us
9.
Power = 3.3837m
PAGE 5
Results:
T-Spice - Tanner SPICE
Version 16.31
Network license from: ece46sql01.ece.unm.edu
Product Release ID: T-Spice Win64 16.31.20150805.02:42:47
Copyright 1988-2015 Mentor Graphics Corporation
Parsing "C:\Users\venkat602609\OneDrive\My Masters\Analog
Electronics\Project\OPAMP_Test_Template.cir"
Initializing parser from header file "C:\Program Files\Tanner
EDA\Tanner Tools v16.3\tiburonda\models\VAdatabase.sp"
Initializing parser from header file "C:\Users\venkat602609\OneDrive\My
Masters\Analog Electronics\Project\OPAMP_Test_Template\header.sp"
Reading library entry "TT_hva" from "C:\Users\venkat602609\OneDrive\My
Masters\Analog Electronics\Project\hv15.l"
Reading library entry "MOS_hva" from "C:\Users\venkat602609\OneDrive\My
Masters\Analog Electronics\Project\hv15.l"
Start of OPAMP_Test_Template.cir
Loaded BSIM3v33 model library, Berkeley BSIM3 v3.3.0
General options:
search = C:\Users\venkat602609\OneDrive\
threads =
1
Device and node counts:
MOSFETs -
27
MOSFET geometries -
Capacitors -
Resistors -
Voltage sources -
Subckt Definitions -
Subckt Instances -
Unique Instances -
Model Definitions -
12
Computed Models -
Independent nodes -
78
Boundary nodes -
PAGE 6
Total nodes -
84
-7.3181
DRH
6.7152
Offset
1.3334u
Power
3.3837m
69.9584MEG
maxgain
Gain_dB
71.3726
f3db
24.4576k
fp1
24.4028k
fp2
85.9847MEG
pm
50.7854
3.7036k
81.1603MEG
SRf
= -124.5736MEG
Parsing
0.06 seconds
Setup
0.09 seconds
DC operating point
0.12 seconds
DC Analysis
1.57 seconds
AC Analysis
0.27 seconds
Transient Analysis
0.46 seconds
PAGE 7
Output
0.05 seconds
Overhead
3.03 seconds
----------------------------------------Total
5.64 seconds
Simulation completed
PAGE 8
Characterization Waveforms:
DC Cahracterization:
PAGE 9
AC Characterization:
Transient Analysis:
PAGE 10
Conclusion:
Operational Amplifier with the required specifications is designed. The
transistors are optimized to dissipate minimum amount of power, meeting all the
requirements.
Initial hand calculations may vary with the final design because of design
optimization.
PAGE 11