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Captulo 1

Rectificadores no controlados
1.1.

Rectificador de onda completa puente

Figura 1.1: (a) Circuito rectificador de onda completa de 6 pulsos (b)Diagrama fasorial de
tensiones.

Topologa sin transformador.


Tensiones de lnea.


Voav
Voav


sin
x

= Vbo
x=
n=6
x
n




sin
/6
1/2
3
= Vbo
= Vbo
= Vbo
/6
/6

(1.1)
1

Captulo 1. Rectificadores no controlados

Figura 1.2: Fases.

Voav

 
3
= ViL

(1.2)

Si la tension de entrada eficaz es 380 Vrms:

Voav

ripple =

F2 1

= 380 2

 
3
= 513 V

(1.3)

Vorms
Voav


2 
2 
sin 2x
ViL
sin /3
Vo
2
Vo rms
=
1+
=
1+
2
2x
2
/3
!

2
2
ViL
3/2
=
1+
= ViL 0,9135
2
/3
 
2
2
9
= ViL 0,9119
Vo 2av
=
ViL
2

v
u 2
u ViL 0,9135
ripple = t 2
1 = 0,042
(1.4)
ViL 0,9119
F =

Captulo 1. Rectificadores no controlados

Ejemplo:
Se tiene el RECTIFICADOR NO CONTROLADO trifasico onda completa
tipo puente cuyas llaves son SKN 240/08.
Cual es la Ioav maxima que puede entregar el rectificador?
Cual es la Voav maxima que puede entregar el rectificador?
Cual es la Poav maxima que puede entregar el rectificador?
Y si es un rectificador trifasico de onda completa tipo punto medio?
Especificaciones de las hojas de datos
VRRM : Repetitive peak reverse voltage (Tension inversa pico repetitiva).
Especificacion MAXIMA.
IF av : Mean forward current (Corriente directa media o CC). Especificacion
MAXIMA.
IF SM : Surge forward current (Corriente directa surge). Especificacion MAXIMA.
IF RM S : RMS forward current (Corriente directa rms). Especificacion MAXIMA.

Captulo 1. Rectificadores no controlados

Para el SKN 240/8:

VRRM = 800 V
IF av = 240 A
IF SM = 6000 A
IF RM S = 500 A

(1.5)

Con estos datos queremos determinar la maxima Ioav y la maxima Voav .

Figura 1.3: Circuito rectificador de onda completa de 6 pulsos.

IF RM S = 500 A es la maxima IF RM S en cada diodo SKN 240/08.


Entonces, cuanto valdra la Io ?
Como es la forma de onda de iF ?

Figura 1.4: Corriente iF (t) y corriente de salida io (t).

Cuanto vale entonces la IF RM S ? Para hacerlo mas sencillo, vamos a comparar


con IoRM S , que es VoRM S /R.

Captulo 1. Rectificadores no controlados

Obtencion de valores eficaces:

Figura 1.5: Obtencion de valores eficaces.

IF RM S
Ioav
IF RM S

Io 0,9135

=
3
 
 
3

= Io
Io = Ioav

3
  r 0,9135
= Ioav
= 0,578Ioav
3
3

(1.6)

Captulo 1. Rectificadores no controlados

Ioav max =

IF RM S
0,578

Ioav max =

500 A
= 865,5 A
0,578

(1.7)

Este proceso para obtener Ioav maxima a partir de IF RM S en el Rectificador


Trifasico Puente se puede extender a las otras topologas. Se obtiene la siguiente
Tabla:
Tabla 1.1: Relaci
on Ioav /IF RM S para diferentes topologas. (PM: Punto Medio).

3 PM
IF RM S
Ioav

0.409

3 Puente 6 PM
0.578

0.289

6 Puente (serie)

12 PM

12 Puente

0.577

0.204

0.577

Que pasa si no dispongo de IF RM S , sino de IF av ?


En realidad, la corriente lmite (especificacion) se puede establecer solo para
IF RM S , que es la que destruye el dispositivo (por temperatura). Si me dan la IF av
es porque el fabricante ha calculado IF av a partir de la IF RM S para una determinada forma de onda de la corriente del diodo.[Ref: Manual SEMIKRON
92 93 pag.A-85].
Por lo tanto, si el fabricante me informa solo IF av , puedo utilizarla solo si se
corresponde a la forma de onda de la aplicacion (del circuito rectificador) o bien
se que es algo muy aproximado.
Cuanto vale Ioav a partir de IF av ?

Figura 1.6: C
alculo de Ioav a partir de IF av .

Captulo 1. Rectificadores no controlados

Para el rectificador 3 Puente:

Ioav = 3IF av

IF av
1
= = 0,33
Ioav
3

Se puede determinar para cada circuito la relacion


Tabla 1.2: Relaci
on

3 PM
IF av
Ioav

0.167

IF av
Io av

IF av
:
Ioav

para diferentes topologas. (PM: Punto Medio).

3 Puente 6 PM
0.333

(1.8)

6 Puente (serie)

12 PM

12 Puente

0.333

0.042

0.333

0.083

Cual es la Voav maxima?


Se obtiene a partir de la VRRM de los diodos. Cuanto vale la tension pico
inversa en los diodos? Tomamos por ejemplo una rama. Si D1 esta en directa,
cuanto cae en D4 (en inversa)?
Vo

ViL

VRRM Vo

(1.9)

En SKN 240/08, VRRM = 800 V:

Voav max

Vomax = 800 V
 
3

Voav = Vo

 
3
= 800 V
= 764 V

(1.10)

Este proceso para obtener Voav a partir del VRRM del diodo provisto por las
hojas de datos se puede extender a los otros circuitos. Se obtiene la Tabla:

Captulo 1. Rectificadores no controlados


Tabla 1.3: Relaci
on

3 PM
VRRM
Voav

2.09

VRRM
Vo av

para diferentes topologas. (PM: Punto Medio).

3 Puente 6 PM
1.105

2.02

6 Puente (serie) 12 PM
1.01

2.0

12 Puente
1.0

Finalmente, la potencia maxima en CC en la salida, PoCCmax , para un rectificador trifasico puente equipado con SKN 240/08 es:

(1.11)

PoCCmax = 661,2 kW

Si usaramos un rectificador trifasico con punto medio, la PoCCmax sera:

PoCCmax = Ioav max Voav max =


=

1.2.

IF RM S VRRM
0,409 2,09

500 A 800 V
= 467,9 kW
0,409 2,09

FILTROS DE POTENCIA

Figura 1.7: Filtrado de potencia.

(1.12)

Captulo 1. Rectificadores no controlados

Figura 1.8: Filtro LC.

Vamos a dividir corriente alterna de corriente continua:

Voav = Viav
voca =

porque VLav = 0

XC //R
vica
XL + XC //R

(1.13)

Si XC << R:

voca u

XC
vica
XL + XC

(1.14)

Si XC << XL :
XC
vica
XL
XC vica
=
XL Voav

voca u
voca
Voav

(1.15)

Pero Voav = Viav :

voca
XC vica
=
Voav
XL Viav

Voca rms
XC Vica rms
=
Voav
XL Viav

(1.16)

XC
ri
XL

(1.17)

ro =

10

Captulo 1. Rectificadores no controlados

Ejemplo: Rectificador trifasico onda completa

ri = 0,042

(1.18)

Si L = 0,001 H, C = 1000 F:
XC
XL

=
=

1
2 LC

1
2300 Hz 0,001 H 1000 F
2

1
= 0,28
3,55

(1.19)

Luego:

ro = 0,28 0,042 = 0,0118 1,12 %

1.2.1.

(1.20)

Inductancia crtica

En el analisis anterior se presupuso que el filtro no alteraba la Vi . Esto es


cierto solo si existe conducci
on continua.
CONDUCCION CONTINUA: la corriente en la inductancia nunca se hace
nula durante el funcionamiento normal.
Si existiera conducci
on discontinua no solo no valdra el analisis anterior
sino que ademas (y fundamentalmente) empeorara el factor de forma de la corriente IF (IF RM S mas elevada, como en el filtro C.)
Condiciones para que exista conduccion continua:

< ILav
ILca

(1.21)

Captulo 1. Rectificadores no controlados

11

Figura 1.9: Condicion para conduccion continua.

Iica RM S 2 < ILav = Ioav

Vica RM S 2
Voav
<
L
R

Vica RM S 2R
L >
Voav

Vica RM S 2R
L >
Viav

(1.22)

(1.23)

L > ri

2R
= Lcrit

(1.24)

R es la resistencia de carga. Si la carga consumiera poca corriente (poca carga),


R sera grande, y por ende Lcrit tambien.
Para que L no tenga que ser grande, en la practica se puede utilizar Rdrenaje .
Para nuestro ejemplo:

21
L > 0,042
= 31,5 H
2300 Hz

(1.25)

12

Captulo 1. Rectificadores no controlados

1.2.2.

Transitorio en Filtro LC

El problema es durante el encendido:

Figura 1.10: Transitorio filtro LC.

Ejemplo

L = 0,001 H

C = 1000 F

E(s) =

Vo (s) =

514 V
s

(1.26)

E(s)
R
E(s)R

= 2
R
s CRL + sL + R
sL + 1+sCR 1 + sCR
1
E(s) CL
1
s2 + s RC
+

1
LC

1
=
LC

R = 1

1
E(s) CL
s2 + s2n + n2

L 1

C 2R

(1.27)

Polos de la ecuacion caracterstica:

s1 , s2 =

2n

p
p
4 2 n2 4n2
= n n 2 1
2

= n jn

1 2

(1.28)

Captulo 1. Rectificadores no controlados

13

Transformada inversa de Laplace por fracciones parciales

Vo (s) =

k
n2
A
Bs + D
=
+
s s2 + 2n s + n2
s
s2 + 2n s + n2
kn2
A(s2 + 2n s + n2 ) + Bs2 + Ds
=
s(s2 + 2n s + n2 )
s(s2 + 2n s + n2 )
(1.29)

(A + B)s2 + (2An + D)s + An2 = kn2 Vo (s)


A+B =0

2An + D = 0

A=k

B = k

An2 = 0
D = 2kn

(1.30)

Por tablas, se obtiene:

Vo (s) =

k
ks
2kn s
+ 2
+ 2
2
s s + 2n s + n s + 2n s + n2
(1.31)

vo (t) = ku(t) ken t cos(n

p
p
1 2 )t ken t sin(n 1 2 )t (1.32)

14

Captulo 1. Rectificadores no controlados

Para el ejemplo: k = 514, n = 1000, = 0,5.

Figura 1.11: Respuesta al escal


on de circuito rectificador de 6 pulsos con filtrado LC.

Conviene hacer 0,5:

Figura 1.12: Transitorio de sistemas de segundo orden en funcion de .

Para aumentar suponiendo R impuesta conviene: disminuir L, aumentar C.

Letter Symbols and Terms


a

Maximum acceleration under vibration

ICsat

Collector current for VCEsat test

Width of the module base

ICRM

Repetitive peak collector current

B2

Two-pulse bridge connection

Id

B6

Six-pulse bridge connection

Direct output current (of a rectifier


connection)

CCHC

Capacitance chip-case (baseplate)

ID

(Direct) off-state current (thyristors)

Cies

Input capacitance, output short-circuited

ID

Maximum direct output current of the


complete circuit (bridge circuits)

ID

Continuous drain current (MOSFETs)

IDC

Continuous direct current (diode)

IDCL

Direct output current with capacitive load


(limiting value)

(IGBT)
Ciss

Input capacitance, output short-circuited


(MOS)

Cj

Junction capacitance

Cmax

Maximum value of reservoir capacitor (for


greater values of capacitance the
recommended current must be reduced)

IDD

Direct off-state current

IDM

Peak value of a pulsed drain current

cont

Continuous direct current

IDR

Coes; Coss

Output capacitance, input shorted

Continuous reverse drain current


(inverse diode forward current)

IDRM

Pulsed reverse drain current, peak value


(pulsed inverse diode forward current)

Coupling capacitance between the primary


winding and each secondary winding

IDSS

Zero gate voltage drain current (gate shorted)

Cres; C rss

Reverse transfer capacitance


(Miller capacitance) (IGBT; MOSFET)

IE

Continuous emitter current

iF

Forward current (instantaneous value)

Duty cycle. D = f tp

IF

Forward current

Contact diameter of capsule devices

IF(OV)

Overload forward current

(di/dt)cr

Critical rate of rise of on-state current

IFAV

Mean forward current

diD/dt

Rate of fall of the drain current (MOSFET)

IFAV(B)

Mean basic load current

diF/dt

Rate of fall of the forward current (diode)

IFCL

Mean forward current with capacitive load

diG/dt

Rate of rise of gate current

IFM

Peak forward current

diT/dt

Rate of fall of the on-state current (thyr.)

IFN

Recommended mean forward current

diT/dt

Rate of rise of on-state current (thyr.)

IFRM

Repetitive peak forward current

(dv/dt)cr

Critical rate of rise of off-state voltage

IFRMS

RMS forward current

DSC

Double sided cooling

IFSM

Surge forward current

Econd

Energy dissipation during conduction time

IFWM

Peak forward working current

ED

Intermittend duty

IG

Gate current

e.m.f.

Electromotoric force (back e.m.f.) =


generated voltage of a rotating machine

IGD

Gate non-trigger current

IGES

Eoff

Energy dissipation during turn-off time

Gate-emitter leakage current,


collector emitter short-circuited

Eon

Energy dissipation during turn-on time

IGoff

Err

Energy dissipation during reverse recovery


(diode)

Output current (peak) max. for switch-off


(driver)

IGon

Operating frequency, pulse frequency

Output current (peak) max. for switch-on


(driver)

fG

Maximum frequency

IGSS

Gate-source leakage current, drain-source


short-circuited

Mounting force

IGT

Gate trigger current

Fu

Recommended fuse (fast acting)

IH

Holding current

gfs

Forward transconductance

IiH

Input signal current (HiGH)

IAOmax

Max. output current (driver)

IL

Latching current

IC

Continuous collector current

IM

ICES

Collector-emitter cut-off current with gateemitter short-circuited

Highest peak current obtainable at a rise time


lower than 1 s (pulse transformers)

IN

ICETRIP

Max. ICE to trip ERROR (SKiiP)

Recommended direct output current with


resistive load

ICM

Peak collector current

INCL

ICp

Non-repetitive peak collector current

Recommended direct output current with


capacitive load

(IGBT, MOS)
Cps

05-2004 by SEMIKRON

Letter Symbols and Terms


INRMS

Nominal r.m.s. current (of a fuse)

Pressure drop

IoutAV

Output average current (driver)

Power dissipation of one component

IR

Reverse current

PAV

IR0

Reverse current for calculating the reverse


power dissipation

Maximum permissible permanent power


dissipation average value

PD

Power dissipation

IRD

Direct reverse current

PFAV

Mean forward power dissipation (diodes)

IRM

Peak reverse recovery current

PFM

Peak forward power dissipation

Irms

Alternating output current (of an a.c.


controller connection)

PG

Peak gate power dissipation

PR

Reverse power dissipation

IRMS

Maximum rated r.m.s. current of a complete


a.c. controller connection

PRAV

Mean reverse power dissipation (thyr.)

irr

Reverse recovery current


(measuring condition for tf and trr)

PRRM

Peak repetitive reverse power dissipation

PRSM

IRRM

Peak reverse recovery current

Non-repetitive peak reverse power


dissipation

IRSM

Maximum permissible non-repetitive peak


reverse current (avalanche diodes)

PTAV

Mean on-state power dissipation (thyristor)

IS

Supply current primary side

PVTOT

Total power dissipation

ISO

Supply current primary side (driver)


at no load

pw

Water pressure

Qf

Charge recovered during the reverse


current fall time

PTOT

iT

On-state current (instantaneous value)

IT

(Direct) on-state current

Qgel

Gate charge (IGBT)

ITAV

Mean on-state current

Qgsl

Gate-source charge (MOSFET)

ITM

Peak on-state current

Qrr

Recovered charge

IT(OV)

Overload on-state current

ITRMS

RMS on-state current

Number of rows of heatsinks one on top


of the other

ITSM

Surge on-state current

RC

Recommended snubber network

i2t

i2t value

rCE

On-state slope resistance (IGBT)

Peak pulse current


(IEC standard pulse 8 x 20 s)

RCE

Resistor for VCE monitoring

RDS(on)

Drain-source on-resistance (MOSFET)

IZ

Tail current (IGBT)

rec ...

Rectangular current waveform

Factor from the relation Zthjc:Rthjc

rec. 120

Rectangular pulses, 120 conduction angle

External collector inductance

REX

Length of the heatsink profile

Auxiliary emitter series resistor


(parallel IGBT)

LCE

Parasitic collector-emitter inductance

RG

Gate circuit resistance

LDS

Parasitic drain-source inductance

RGoff

External gate series resistor at switch-off


(MOSFET, IGBT)

Lext

External circuit inductance (short circuit)

RGon

Lp

Inductance of the primary winding at 1 kHz

External gate series resistor at switch-on


(MOSFET, IGBT)

Lss

Parasitic inductance (sec. stray inductance)

RGS

Gate-source resistance (MOSFET)

Mounting torque

RL

M1

Torque for mounting the semiconductor


to the heatsink

Load resistance for measuring tr and IM


(pulse transformer)

Rmin

M2

Torque for mounting the busbars to the


semiconductor

Recommended series resistor for capacitive


loads (source resistance included in this
value)

Mac

Mounting torque for AC terminals

Rp

Mdc

Mounting torque for DC terminals

Recommended parallel resistor for use with


series connection

Number of semiconductor components


(modules) on a common heatsink

Rp

D.C. resistance of the primary winding

rpm

Revolutions per minute

Number of load cycles

Rs

D.C. resistance of each secondary winding

Maximum number of series connected


silicon elements

rT

On-state slope resistance, forward slope


resistance (thyristor, diodes)

Np/N s

Ratio of windings primary to secondary

RTD

Resistor for interlock dead time (driver)

by SEMIKRON 05-2004

Letter Symbols and Terms


Rthca

Thermal resistance case to ambient air

tpdon-err

Propagation delay time on ERROR

Rthch

Contact thermal resistance case to


heatsink1)

tpRESET

Min. pulse width ERROR memory


RESET time

Rthcw

Thermal resistance case to cooling water

tq

Circuit commutated turn-off time (thyristor)

Rthha

Thermal resistance heatsink to ambient air

tr

Rise time

Rthja

Thermal resistance junction to ambient air

tR

Reverse blocking time: tR = tc tp

Rthjc

Thermal resistance junction to case

Tref

Reference point temperature

R(thjc)p

Thermal resistance junction to case under


pulse conditions

trr

Reverse recovery time

tsp

Cycle time

Rthjr

Thermal resistance junction to reference


point

Tstg

Storage temperature range

Rthjoil

Thermal resistance junction to oil

Ttp

Over temperature protection (SKiiP)

Rthjw

Thermal resistance junction to cooling water

Tvj

Virtual junction temperature

Rthmw

Thermal resistance thermal trip-cooling water

Tw

Water temperature

sin...

Sinusoidal current waveform

tZ

Tail time (IGBT)

sin. 180

Half sinewaves, 180 conduction angle

SSC

Single sided cooling

Time

Tamb

Ambient temperature

Tbtt

Switching temperature of the attached


bimetal thermal trip

tc

Period (cycle) duration

Tcase

Case temperature

tcond

vdt

vair

Voltage-time integral at no load


Air velocity

Vair

Air volume

Vair/t

Air flow

V(BR)

Avalanche breakdown voltage

V(BR)CES

Collector-emitter breakdown voltage,


gate-emitter short circuited

V(BR)DSS

Drain-source breakdown voltage,


gate-source short circuited

Conducting time

VCC

Collector-emitter supply voltage

td

Delay time

VCE

Collector-emitter (direct) voltage

td(err)

ERROR input-output propagation delay time


(driver)

VCEclamp

Collector-emitter clamping voltage during


turn-off

td(off)

Turn-off delay time

VCES

td(off)io

Input-output turn-off propagation delay time


(driver)

Collector-emitter (direct) voltage with


base-(gate-)emitter short-circuited

VCEsat

Collector-emitter saturation voltage

td(on)

Turn-on delay time

VCE(TO)

Collector-emitter threshold voltage (static)

td(on)io

Input-output turn-on propagation delay time


(driver)

VCEstat

Collector-emitter threshold static


monitoring voltage

Terr

Max. temperature for setting ERROR

VCEdyn

te

On-time

Collector-emitter threshold dynamic


monitoring voltage

tf

Reverse current fall time (diode)

Vcond

tf

Fall time

Drain-source (collector-emitter-)voltage
in the conducting state

tfr

Forward recovery time

VD

Direct output voltage (bridge rectifier)

tgd

Gate controlled delay time

VD

(Direct) off-state voltage (thyristor)

tgr

Gate controlled rise time

VDD

Direct off-state voltage (thyristor)

Th

Heatsink temperature

VDD

Drain-source supply voltage (MOSFET)

tif

current fall time

VDGR

tir

current rise time

Drain-gate voltage with specified input


resistance

Tj

Junction temperature

VDRM

Repetitive peak off-state voltage

Toil

Oil temperature (at the hottest place) during


operating in insulating oil

VDS

Drain-source voltage

VEE

Emitter supply voltage

toff

Turn-off time

vF

Forward voltage (instantaneous value)

ton

Turn-on time

VF

(Direct) forward voltage

Top

Operating temperature range

VG

Gate voltage

Pulse duration

VGD

Gate non-trigger voltage

tp

05-2004 by SEMIKRON

Letter Symbols and Terms


VGE

Gate-emitter voltage

V(TO)

VGES

Gate-emitter voltage, collector-emitter


short-circuited

VT(TO)

Threshold voltage

VUVS

Supply undervoltage monitoring

VGE(th)

Gate-emitter threshold voltage

Vv

Alternating line voltage (r.m.s.)

VG(off)

Turn-off gate voltage output

VVRMS

Alternating input voltage (r.m.s. value)

VG(on)

Turn-on gate voltage output

Vw

Water volume

VGS

Gate-source voltage

VWW

VGS(th)

Gate-source threshold voltage

VGT

Gate trigger voltage

Maximum alternating working voltage


between windings (r.m.s. value)
(pulse transformer)

ViH

Input signal voltage (HIGH) max.

Weight

VISOL

Insulation test voltage (r.m.s.)

W1

Single phase a.c. controller connection

VisolIO

Isolation test voltage (r.m.s. / 1 min.)


input-outpt (driver)

W3

Three phase a.c. controller connection

Wcond

Visol12

Isolation test voltage (r.m.s. / 1 min.)


output1 - output 2 (driver)

Energy dissipation during the conducting


time

WF, E F

Forward energy dissipation

ViT+

Input threshold voltage (HIGH) min.

Woff, Eoff

Energy dissipation during the turn-off time

ViT

Input threshold voltage (LOW) max.


Water volume per unit time

Won,Eon
^ ^
Wp, Ep

Energy dissipation during the turn-on time

Volw
VoH

Logic HIGH output voltage (driver)

VoL
^
V

Logic LOW output voltage (driver)

Zth

Transient thermal impedance

Peak pulse voltage

Zthca

VR

(Direct) reverse voltage

Transient thermal impedance case to


ambient

VRD

Direct reverse voltage

Zthjc

Transient thermal impedance junction to


case

VRGM

Peak reverse gate voltage

ZthjcD

VRGO

No-load reverse gate voltage

VRRM

Repetitive peak reverse voltage

Transient thermal impedance junction to


case of the freewheeling diode (brake
chopper IGBT module)

VRSM

Non-repetitive peak reverse voltage

Zthjh

VRWM

Crest working reverse voltage

Transient thermal impedance junction to


heatsink

VS

Supply voltage primary (for gate driver)

Zthha

Transient thermal impedance heatsink to


ambient air

VS1

Supply voltage stabilized

Z(th)p

VS2

Supply voltage non stabilized

Transient thermal impedance under pulse


conditions

VSD

Negative source-drain voltage


(inverse diode forward voltage)

Z(th)t

Transient thermal impedance

Z(th)z

Supplementary transient thermal impedance

vT

On-state voltage (instantaneous value)

Conduction angle

VT

(Direct) on-state voltage (thyr.)

by SEMIKRON 05-2004

Maximum permissible non-repetitive peak


pulse energy (rectangular pulse 2 ms)

VRSM
VRRM

IFRMS (maximum values for continuous operation)


200 A
260 A
500 A
125 A

IFAV (sin. 180; Tcase = 100 C)


165 A

320 A

Rectifier Diodes
SKN 100
SKN 130
SKN 240

SKR 100
SKR 130
SKR 240

200
400
800
1200
1400
1600
1800

SKN
100/02
100/04
100/08
100/12
100/14
100/16
100/18

SKR
100/02
100/04
100/08
100/12
100/14
100/16
100/18

Symbol Conditions
IFAV

SKN
130/02
130/04
130/08
130/12
130/14
130/16
130/18

SKR
130/02*
130/04*
130/08*
130/12*
130/14*
130/16*
130/18

SKN
240/02
240/04
240/08
240/12
240/14
240/16
240/18

SKR
240/02*
240/04*
240/08*
240/12*
240/14*
240/16*
240/18

SKN 100
SKR 100

SKN 130
SKR 130

SKN 240
SKR 240

sin. 180;
Tcase = 100 C

125 A

165 A

320 A

= 125 C

100 A

130 A

240 A

IFSM

Tvj = 25 C; 10 ms
Tvj = 180 C; 10 ms

1 750 A
1 500 A

2 500 A
2 000 A

6 000 A
5 000 A

i2t

Tvj = 25 C 8,3...
Tvj = 180 C 10 ms

15 000 A2s
11 500 A2s

31 000 A2s
20 000 A2s

180 000 A2s


125 000 A2s

typ. 100 C

typ. 120 C

typ. 200 C

1 mA

1 mA

2 mA

15 mA

22 mA

60 mA

1,55V (400A)

1,5V (500A)

1,4V (750A)

Qrr

IR

VF

Tvj = 160 C;
diF
A

= 10
dt
s
Tvj = 25 C;
VR = VRRM
Tvj = 180 C;
VR = VRRM
Tvj = 25 C;
(IF = ...); max.

V(TO)

Tvj = 180 C

0,85 V

0,85 V

0,85 V

rT

Tvj = 180 C

1,8 m

1,3 m

0,6 m

Rthjc

0,45 C/W

0,35 C/W

0,20 C/W

Rthch

0,08 C/W

0,08 C/W

0,03 C/W

Tvj

40 ... + 180 C

Tstg

55 ... + 180 C

SI units/US units

a
w

approx.

RC

PR = 2 W

Rp

PR = 20 W

Case

by SEMIKRON

Features
Reverse voltages up to 1600 V
Hermetic metal cases with
glass insulators
Threaded studs ISO M 12,
M16 x 1,5
(SKR 130 also 1/220 UNF
or 3/824 UNF,
SKR 240 also 3/416 UNF)
SKN: anode to stud
SKR: cathode to stud
Typical Applications
All-purpose mean power
rectifier diodes
Cooling via heatsinks
Non-controllable and
half-controllable rectifiers
Free-wheeling diodes

10Nm/90lb.in. 10Nm/90lb.in. 30Nm/270lb.in.


5 . 9,81 m/s2 5 . 9,81 m/s2 5 . 9,81 m/s2
100 g

100 g

250 g

0,25F + 50 0,25F + 50 0,5F + 30


50 k

50 k

50 k

E 13

E 14

E 15

available in limited quantities


* available with UNF threads:
3/824 UNF 2 A (e.g. SKR130/02
UNF 3/8) or
1/220 UNF 2 A
(e.g. SKR 130/02 UNF),
SKR 240/02 UNF with
3/416 UNF 2 A thread

B 8 21

B 8 22

by SEMIKRON

by SEMIKRON

B 8 23

B 8 24

by SEMIKRON