RF circuits (2016488)

Problem set # 1

Circuit Elements in RF

Javier Leonardo Araque Quijano

jlaraqueq@unal.edu.co
Building 453 - oce 204
Phone ext.: 14083

Thermal Noise

1. For a parallel RLC resonator, discuss the eect of

the typical parasitic eects for each of the components on the resonance frequency and the quality
factor.
2. Repeat for a series RLC resonator.
3. Consider measurement of a load impedance using
two channels of an oscilloscope to measure v1 and
v2 as shown in Figure.
For the amplifier in the figure above, considering only
thermal noise calculate:
1. Signal to Noise Ratio (SNR) of the source.
2. Noise Figure (NF) of the amplifier (assume Rload is
noiseless).
3. Discuss the best choices to minimize the noise figure
of the amplifier.
(a) Provide a formula to obtain the unknown ZL
in terms of the (complex) voltages measured
and the component values (neglect any loading eects by the probes). What is the eect
of Rs ?
(b) Repeat considering the loading eect by the
oscilloscope probes used to measure v1 and v2 .
(c) Determine the conditions under which loading
by the oscilloscope probes can be neglected.

Impedance Matching
1. Illustrate the zones on the Smith Chart where each
of the matching networks indicated can be used to
match a given load to Zr ef (the elements are listed
starting by the closest to the load):
(a) Shunt C, series C
(b) Shunt C, series L

Distortion [1, Secs.

7.4.1]

2.3 and

For a common-emitter amplifier with bias current Ic =

14mA, load resistance Rc = 100 and input applied directly to the base, calculate the following:
1. 2nd order intercept (vIIP 2 and vOIP 2 ).
2. 3rd order intercept (vIIP 3 and vOIP 3 ).
3. Considering a symmetrical voltage swing at the output of 5V, estimate the 1-dB compression point
vI1dB and vO1dB .
4. Verify your results with numerical simulation.

(c) Series L, shunt L

(d) Series L, shunt C
2. Provide the algebraic expressions for the conditions
found in the previous exercise.
3. For each of the loads below, calculate all the lumped
L-section networks that can be used for matching to
50 at f = 100 MHz and compare these in terms of
component values and bandwidth (use simulation
to estimate the latter).
(a) 15 in parallel with 1nF
(b) 10 in series with 12nH

High-frequency amplifiers

Consider a common-emitter amplifier with C = 10pF,

C = 150pF, = 250, Ic = 15mA, Rc = 3.6k.

2. A resistor between the transistors emitter and

ground with value Rf = 620.
3. Verify your results using circuit simulation.

1. Calculate the intermediate frequency gain and the

input and output resistances (i.e. neglecting the ef- 7
Definitions of Gain [2, Sec. 3.2]
fect of parasitics and assuming ideal AC-coupling
The following power gain definitions are used in practice
and A-C blocking elements).
to characterize amplifiers:
2. Calculate the frequency response and estimate the
3-dB bandwidth (consider all the poles present,
Available Power Gain: ratio between the power
specify the approximations made in the analysis if
available at the output of the amplifier and the
any).
power available from the source
3. Provide a complete schematic including biasing network and AC coupling both at input and output.
Specify the conditions for the biasing network not
to aect the frequency response.
4. Calculate the output voltage swing resulting in the
complete circuit.
5. Check your results with circuit simulation using an
ideal transistor model with the addition of the parasitic capacitances C and C and with = 250.
6. Simulate using a model of the 2N3904 NPN BJT
(modify the biasing network if required to obtain
proper operation). Discuss and justify the dierences.

Feedback

For the amplifier in Ex. 5, analyze the eect of the following feedback mechanisms over bandwidth:
1. A resistor connected between the transistors base
and colector with value Rf = 1.8k.

GA =

av
Pout
av
Psrc

Transducer Power Gain: ratio between the power

delivered to the load and the power available from
the source:
GT =

load
Pout
av
Psrc

(Operating) Power Gain: Ratio between the power

delivered to the load and the power delivered to the
input of the amplifier:
GP =

load
Pout
Pin

1. Specify the conditions under which each of these

gains can be measured.
2. Write down a double inequality relating these three
power gain definitions and justify your result.
3. Considering a signal source with 50 output resistance, a trans-impedance amplifier with Zin = (10
j5), Zout = (35+j15) and gain A = 103 V /A, and
a load impedance ZL = (70 j20), calculate each
of these gains.

References
[1] J. W. Rogers and C. Plett, Radio Frequency Integrated Circuit Design, 2nd ed.
[2] G. Gonzalez, Microwave Transistor Amplifiers, 2nd ed. Prentice Hall, 1997.

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