Documentos de Académico
Documentos de Profesional
Documentos de Cultura
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
The ideal diode: (a) diode circuit symbol; (b) i-v characteristic; (c) equivalent circuit in the reverse direction; (d) equivalent circuit in
the forward direction.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
(a) Rectifier circuit. (b) Input waveform. (c) Equivalent circuit when (d) Equivalent circuit when v1 0 (e) Output waveform.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
BATTERY-LOAD CIRCUIT
(vS sinusoidal) The current iD flew to battery
through diode at 20% of input signal period
whose mean value is 100mA. (a)Vpp =
? (b) R=?
(c) ID(Peak) = ?
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
(a) The pn junction with no applied voltage (open-circuited terminals). (b) The potential distribution along an axis perpendicular to the
junction.
(b)
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
(a) The pn junction excited by a constant-current source I in the reverse direction. To avoid breakdown, I is kept smaller than Is.
Note that the depletion layer widens and the barrier voltage increases by Vr volts, which appears between the terminals as a reverse
voltage.
(b) The pn junction excited by a constant-current source supplying a current I in the forward direction. The depletion layer narrows
and the barrier voltage decreases by V volts, which appears as an external voltage in the forward direction.
(a)
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
The diode i-v relationship with some scales expanded and others compressed in order to reveal details.
for vD 0.5V
iD
iD
vD = nVT ln = 2.3nVT log
IS
IS
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
VT = Thermal Voltage VT = kT
q
iD @ I s e
vD
nVT
nVvD
iD = I s e - 1
IS = Saturation Current
IS is a constant for a given diode at a
given temperature. Its also called Scale
Current due to fact that IS is directly
proportional to the cross-sectional area
of de diode. IS is of the order of 10 15 A.
-5
-0.1
10
15
20
25
30
35
-2
-0.2
-1
10
11
12
IS
-0.15
0.1
0.3
0.4
0.5
Diode Voltage (V)
0.6
0.05
0.7
0.1
0.8
vD
nV
T
iD = I s e - 1
-0.5
0.5 0.525 0.55 0.575 0.6 0.625 0.65 0.675 0.7 0.725 0.75
Diode Voltage (V)
0.5
1.5
2.5
3.5
4.5
-0.1
-0.05
0
Diode Voltage (V)
0.2
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
40
10
10
10
10
10
10
10
10
10
10
10
10
10
0.46
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0.52
0.58
0.64
0.7
0.76
0.82
0.94
i2
vD = nVT ln
IS
i2
IS
i
Dv = v2 - v1 = 2.3 nVT log 2
i1
i2
Dv = v2 - v1 = nVT ln
i1
0.88
120mV/Decade of Current
n=2
60mV/Decade of Current
n=1
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
nVT
IS = iDe
v
-D
nVT
)
= 6.9x10-16A
-0.2
0.5
0.2
0.4
0.6
0.8
0.55
0.85
0.9
-0.2
-0.15
-13
x 10
Diode 2
0.15
Diode 1
-0.1
-0.05
0
0.05
0.1
Diode Voltage (V) n = 1 VT = 25mV
0.6
0.65
0.7
0.75
0.8
Diode Voltage (V) n = 1 V T = 25mV
-6
-4
-2
10
12
= 6.9x10-13A
n = 1 Diode 2 (0.7 -1A) IS 2 = 1e
IS 2
= 1000 Area( Diode 2 ) = 1000 x Area( Diode 1 )
IS1
- 0.7
25m
0.7
-3 - 25m
iD = IS e
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
vD
0.2
-3
0.692
0.694
0.696
T=20
0.698
0.7
0.702
Diode Volta ge (V)
T=21
0.706
0.708
Temperature Effect
0.704
x 10
0.6
0.69
0.7
0.8
0.9
1.1
1.2
1.3
1.4
1.5
1.6
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
0.71
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
4. The diode in the circuit of figure below is a large, high-current device whose reverse
leakage is reasonably independent of voltage. If V=1V at 20oC, find the value of V at
40oC and at 0oC. Ans. 4V; 0.25V
3. Using the fact that a silicon diode has IS=10-14A at 25oC and that IS increases by 15%
per oC rise in temperature, find the value of IS at 125oC. Ans. 1.17x10-8A
2. A silicon junction diode with n=1 has v=0.7V at i=1mA. Find the voltage drop at
i=0.1mA and i=10mA. Ans. 0.64V; 0.76V
1. Consider a silicon with n=1.5. Find the change in voltage if current changes from
0.1mA to 10mA. Ans. 172.5mV
Exercises (1)
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
2. In the circuit shown below, both diodes have n = 1 , but D1 has ten times the junction
area of D2. What value of V results for ID1 of 1mA? To obtain a value for V of 50mV,
what current ID1 is needed?
1. For the circuit shown below, both diodes are identical, conducting 10mA at 0,7V and
100mA at 0,8V. Find the value of R, for which V = 50mV.
Exercises (2)
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
Graphical Analysis
I
v2 = 0.7 + 0.1 log D
1m
5 - 0.7
4.3m
= 4.3 mA VD' = 0.7 + 0.1 log
= 0.763V
1k
1m
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
I D'' =
5 - 0.763
4.237m
= 4.237mA VD'' = 0.7+ 0.1 log
= 0.7627V
1k
1m
5 - 0.7627
4.2373m
I D''' =
= 4.2373mA VD''' = 0.7+ 0.1 log
= 0.7627V
1k
1m
VD = 0.7627V \ I D = 4.2373mA
I D' =
Recurrent Equation:
Determine the current ID and the diode voltage VD for the circuit below with VDD=5V and
R=1kW. Assume that the diode has a current of 1mA at a voltage of 0.7V and that its
voltage drop changes by 0.1V for every decade change in current.
Iterative Analysis
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
ID =
5 - 0.65
= 4.26mA
1k + 20
VD = VDO + I DrD = 0.65+ 4.26m 20 = 0.735V
VDO = 0.65V
rD=20W
Determine the current ID and the diode voltage VD for the circuit below with VDD=5V and
R=1kW, utilizing the piecewise-linear model whose parameters are given in figure below.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
5 - 0.7
ID =
= 4.3mA
1k
Determine the current ID and the diode voltage VD for the circuit below with VDD=5V and
R=1kW, utilizing the constant-voltage-drop model (VDO= 0.7V).
The constant-voltage-drop model of the diode forward characteristic and its equivalent
circuit representation.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
3. Design the circuit in figure below to provide an output voltage of 2.4V. Assume that
the diodes available have 0.7V drop at 1mA and that DV=0.1V/decade change in
current. Ans. 760 W.
2. Consider a diode that is 100 times as large (in junction area) as a diode whose
characteristics are VDO=0.65V and rD=20W how would the model parameters VDO and
rD change? Ans. VDO does not change; rD decreases by a factor of 100 to 0.2V.
1. For the circuits in Fig. below find ID and VD for the case VDD=5V and R=10KW.
Assume that the diode has a voltage of 0.7V at 1mA current that voltage changes by
0.1V/decade of current change. Use (a) iteration (b) the piecewise-linear model with
rD=20W and (c) the constant-voltage-drop model with VD=0.7V. Ans. (a) 0.434mA,
0.63V; (b) 0.431mA, 0.689V; (c) 0.43mA, 0.7V.
Exercises (3)
nVT
vd < nVT
vd
nVT
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
nVT
rd =
ID
nVT
vd
= ID e
v
1+ d
nVT
nVT
nVT
vd vd
=
id = I D
nVT rd
vd
iD = IS e
VD
iD = IS e
(VD +vd )
iD = I D + id \vD = VD + vd
i
rd = 1 D
vD iD =ID
(c)
(d)
(b)
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
The analysis of the circuit in (a), which contains both dc and signal quantities, can be performed by replacing the diode with the model
of Fig. (a), as shown in (b). This allows separating the dc analysis [the circuit in (c)] from the signal analysis [the circuit in (d)].
(a)
rd
53.8
=2
= 10.7mVpp
53.8+ 10k
rd + R
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
model is justified.
vd (peak- to - peak) = 2
AC analysis
10- 0.7
ID =
= 0.93mA
10K
nV 2 25m
= 53.8
rd = T =
ID
0.93m
Consider the circuit shown in fig. below for the case R=10KW. The power supply V+
has a DC value of 10V on which is superimposed a 60Hz sinusoid of 1V peak
amplitude (power supply ripple). Calculate both the DC voltage of the diode and the
amplitude of the sine-wave signal appearing across it. Assume the diode to have a
0.7V drop at 1mA current and n=2.
= 7.9mA
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
AC analysis
r
18.9
vo = 2
=2
= 37.1mV pp
r + R 18.9+ 1k
vo = 18.5mV p or 0.9%
r = 3rd = 18.9
1K
nV 2 25m
rd = T =
= 6.3
ID
7.9m
ID =
1k //18.9
1k//1k
vO =
10+
1.95 = 2.061V
1k //18.9 +1k
1k//1k+ 18.9
DvO = vo = 2.061- 2.1 = -39mV
Consider the circuit shown in fig. below. A string of three diodes is used to provide a constant
voltage of about 2.1V. We want to calculate the percentage change in this regulated voltage
caused by (a) 10% change in the power-supply voltage and
(b) connection of a 1KW load resistance. Assume n = 2.
(b) For all three diodes the small-signal model we
(a) DC analysis
can use the parameters VDO=1.95V and rd= 18.9W
10 - 2.1
obtained from (a) analysis.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
1. Find the value of the diode small-signal resistance at bias current of 0.1, 1, and 10mA.
Assume n=1. Ans. 250W; 25W; 2.5W.
2. For a diode that conducts 1mA at a forward voltage drop of 0.7V and whose n=1, find
the equation of the straight-line tangent at ID=1mA. Ans. iD = (1/25)(vD-0.675).
3. Consider a diode with n=2 biased at 1mA. Find the change in current as a result of
changing the voltage by (a) 20mV; (b) 10mV; (c) -5mV (d) +5mV (e)+10mV;
(f) +20mV. In each case, do the calculations (i) using the small-signal model and
(ii) using the exponential model. Ans. (a) 0.40, -0.33mA; (b) 0.20, -0.18mA;
(c) 0.10, -0.10mA; (d) +0.10, +0.11mA; (e) +0.20, +0.22mA; (f) +0.40, +0.49mA.
4. Design the circuit of fig. below so that VO=3V when IL = 0, and VO changes by 40mV
per 1mA of load current. Find the value of R and the junction area of each diode
(assume all four diodes are identical) relative to a diode with 0.7V drop at 1mA
current. Assume n=1. Ans. R= 4.8kW; 0.34.
Exercises (4)
The diode i-v characteristic with the breakdown region shown in some detail.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
I Zmin + I Lmax
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
R=
rz
rz + R
R
r
VZO + z VS -(rz //R)IL
R + rz
rz + R
Line Regulation =
VO =
DVO
\ un = mV/mA
DI L
Load regulation
\ un = mV/V
DVO
DVS
Line regulation
rz
V+ = 38.5mA
rz + R
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
r // R
R // RL
VO = z L 10+
6.7
rz // RL + R
R // RL + rz
(b) VO =
(a)VO = 6.83V
rz
R
VO =
10+
6.7
rz + R
R + rz
VZO+I ZKrz
+ -(V +I r )
Vmin
ZO ZK z
-I ZK
0.5k
10 = 5V
0.5k+ 0.5k
(e) RL = 1526 W
RL =
(d) VO =
The 6.8V zener diode in the circuit of fig. below is specified to have VZ = 6.8V at IZ = 5mA,
rz = 20W, and IZK= 0.2mA. The supply voltage V+ is nominally 10V but can vary by 1V. (a) Find
VO with no load and with V+ at its nominal value. (b) Find the change in VO resulting from the
1V change in V+. (c) Find the change in VO resulting from connecting a load resistance
RL = 2kW. (d) Find the value of VO when RL = 0.5kW. (e) What is the minimum value of RL for
which the diode still operates in the breakdown region?
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
V
t = ( - 2 ) where = to = sen -1 DO
VS
vomax = VS - VDO
PIV = VS
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
(a) Half-wave rectifier. (b) Equivalent circuit of the half-wave rectifier with the diode replaced with its battery-plus-resistance model.
(c) transfer characteristic of the rectifier circuit. (d) Input and output waveforms, assuming that rD << R.
V
t = ( - 2 ) where = to = sen -1 DO
VS
vomax = VS - VDO
PIV = 2VS - VDO
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
Full-wave rectifier utilizing a transformer with a center-tapped secondary winding. (a) Circuit. (b) Transfer characteristic assuming a
constant-voltage-drop model for the diodes. (c) Input and output waveforms.
-1
2VDO
t = ( - 2 ) where = to = sen
VS
vomax = VS - 2VDO
PIV = VS - VDO
The bridge rectifier: (a) circuit and (b) input and output waveforms.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
2V p
= I L 1 +
Vr
iDmax
iDav
t @ 2Vr
Vp
\ PIV @ 2V p
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
Voltage and current waveforms in the peak rectifier circuit with CR >> T. The diode is assumed ideal. (Half Wave)
2V p
= I L 1 + 2
Vr
1
vo(DC) = Vo @ V p - Vr
2
1
iLDC = I L = V p - Vr /R
2
Vp
Vr =
f CR
2V p
= I L 1 +
2Vr
iDmax
iDav
2Vr
Vp
PIV @ V p (Bridge)
t @
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
Voltage and current waveforms in the peak rectifier circuit with CR >> T. The diode is assumed ideal. (Full Wave Rectifier)
Vp
= I L 1 + 2
2Vr
1
vo(DC) = Vo @ V p - Vr
2
1
iLDC = I L = V p - Vr /R
2
Vp
Vr =
2f CR
Consider a bridge-rectifier circuit with a filter capacitor C placed across the load
resistor R, for the case in which the transformer secondary delivers a sinusoid of
12 Vrms having 60Hz frequency, and assuming VDO = 0,8 V and a load resistance
R= 100 W. Find the value of C that results in a ripple voltage no larger than 1 Vpp.
What is the DC voltage at the output? Find the load current. Find de diodes
conduction angle. What is the average diode current? What is the peak reverse
voltage across each diode? Specify the diode in terms of its peak current and its
PIV. Ans. 1281mF; 15.4V or (a better estimate) 14.9V; 0.15A; 0.36 rad; 1.45A;
2.74A; 16.2V. Thus select a diode with 3.5 to 4 A peak current and a 25 V PIV
rating (50%).
It is required to use a peak rectifier to design a DC power supply that provides an
average DC output voltage of 15V on which a maximum of 1V ripple is allowed.
The rectifier feeds a load of 150W. The rectifier is fed from the line voltage
(120Vrms 60Hz) through a transformer. The diodes available have 0.7V drop when
conducting. If the designer opts for the half-wave circuit: (a) Specify the rms
voltage that must appear across the transformer secondary. (b) Find the required
value of the filter capacitor. (c) Find the maximum reverse voltage that will appear
across the diode, and specify the PIV rating of the diode. (d) Calculate the average
current through the diode during conduction. (e) Calculate the peak diode current.
Ans. (a) 11.8Vrms; (b) 889mF; (c) 32.7V; (d) 2.61A; (e) 1.36 A.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
2.
1.
Exercises (5)
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
3
6.75
vo=vi
vi
vo=(4/5)vi+3/5
vo=(4/7)vi+15/7
-6
5
-9.6
9.6
vi
vo=vi
vo=(1/6)vi-8
-9.6
9.6
vi
vo=vi
vo=(2/3)vi-2
-6
vo
Assuming the diodes has a 0.7V drop when conducting and the zener specified
voltage is 8.2V (ideal), describe the transfer characteristic of the circuits shown in
vo
Figure below.
vo=(1/6)vi+8
vo
vo=(3/4)vi+5/4
5
Assuming the diodes to be ideal, describe the transfer characteristic of the circuits
shown in Figure below.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
2.
1.
Exercises (6)
vi
10V
10V
-10V
10V
vO
vO
10V
10V
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
Determine VX to have an average voltage of output A for the circuit shown in figure
below. Consider the diode ideal and the input signal is that shown in figure below.
Ans.: VX = -(1/2)A V
-6V
4V
-6V
4V
vi
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
-2VP
-VP
vD1
t
-VP
VP
v1
-2VP
vO
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
Photodiodes
Varactors
- light
(E=hn)
- heat
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
iD
20
iD(mA)
1.0
vD
10
Materials:
GaAs ( infrared )
GaAs1-xPx
GaAs0.6P0.4 red light ( EG 1.8 eV )
n = EG / h
h: Plancks constant
h=6.63x10-34 Jsec
recombination
electron (+)
hole
(-) energy
Photonic Devices
2.0
vD(V)
gop
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
hn > EG
Photodiodes (1/2)
iD
vD
dark current
iD
vD
iD
vD
vD
nV
i D = I s e T - 1 - i PH
VOC = vD
iD = 0
= -i PH
I SC
iD
VOC
iPH
= n VT ln
Is
v D =0
No
illumination
ISC = i D
iPH
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
Photodiodes (2/2)
a,c p = vD x iD > 0
b p = vD x iD < 0
the diode is a power
source.
vD
(b)
iPH
No illumination: VO = VB
Illumination: VO = VB - Riph
(a)
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
+V
Photo detector
+V
v
O
ID
iph
vO = Riph
photodiode
Light-to-voltage
converter R
LED
Optoisolator
-1
Isc
Voc
Pmax
3 in
V = Vm , I = Im for P = Pmax
Solar cells
-1.0
-0.5
0.0
0.5
1.0
1.5
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.