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Data Sheet
January 2002
Features
8A, 500V
Ordering Information
PART NUMBER
IRF840
NOTE:
PACKAGE
TO-220AB
rDS(ON) = 0.850
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
BRAND
IRF840
Packaging
JEDEC TO-220AB
TOP VIEW
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
IRF840 Rev. B
IRF840
Absolute Maximum Ratings
IRF840
500
500
8.0
5.1
32
20
125
1.0
510
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
oC
oC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
SYMBOL
BVDSS
VGS(TH)
IDSS
MIN
TYP
MAX
UNITS
TEST CONDITIONS
500
2.0
4.0
25
250
8.0
ID(ON)
IGSS
rDS(ON)
gfs
tD(ON)
tr
100
nA
0.8
0.85
4.9
7.4
15
21
ns
21
35
ns
50
74
ns
20
30
ns
42
63
nC
7.0
nC
tf
Qg(TOT)
Qgs
22
nC
1225
pF
COSS
200
pF
CRSS
85
pF
Modified MOSFET
Symbol Showing the
Internal Devices
Measured from the Drain Inductances
D
Lead, 6mm (0.25in) from
Package to Center of Die
LD
3.5
nH
4.5
nH
7.5
nH
1.0
oC/W
62.5
oC/W
Qgd
Input Capacitance
CISS
Output Capacitance
Reverse-Transfer Capacitance
VGS = 20V
tD(OFF)
LD
LS
G
LS
S
RJC
RJA
IRF840 Rev. B
IRF840
Source to Drain Diode Specifications
PARAMETER
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
MIN
TYP
MAX
UNITS
8.0
32
2.0
210
475
970
ns
2.0
4.6
8.2
VSD
trr
QRR
NOTES:
2. Pulse Test: Pulse width 300s, duty cycle 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 14mH, RG = 25, peak IAS = 8A.
10
1.0
ID , DRAIN CURRENT (A)
1.2
0.8
0.6
0.4
0.2
0
0
0
50
100
150
25
50
75
100
150
125
0.5
THERMAL IMPEDANCE
0.2
0.1
0.1
0.05
0.02
0.01
10-2
PDM
SINGLE PULSE
10-3 -5
10
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC x RJC + TC
10-4
10-2
10-3
0.1
t1 , RECTANGULAR PULSE DURATION (s)
10
IRF840 Rev. B
IRF840
Typical Performance Curves
(Continued)
15
102
VGS = 10V
10
100s
1ms
OPERATION IN THIS
REGION IS LIMITED
BY rDS(ON)
10ms
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
0.1
1
10s
12
VGS = 6.0V
9
VGS = 5.5V
6
VGS = 5.0V
DC
102
10
103
0
0
50
100
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
3
VGS = 4.0V
250
200
VGS = 10V
12
150
15
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
100
VGS = 4.0V
VGS = 4.5V
10
1
TJ = 150oC
TJ = 25oC
0.1
VGS = 4.5V
0.01
0
3
6
9
12
VDS , DRAIN TO SOURCE VOLTAGE (V)
15
10
3.0
6
VGS = 10V
4
VGS = 20V
0
0
16
24
32
TC , CASE TEMPERATURE (oC)
2
4
6
8
VSD , GATE TO SOURCE VOLTAGE (V)
10
40
2.4
1.8
1.2
0.6
0
-60
-40
-20
20
40
60
80
IRF840 Rev. B
IRF840
Typical Performance Curves
(Continued)
3000
ID = 250A
1.15
1.05
0.95
1800
CISS
1200
COSS
0.85
0.75
-60
2400
C, CAPACITANCE (pF)
1.25
CRSS
600
-40
-20
20
40
60
80
100
12
TJ = 25oC
TJ = 150oC
6
9
ID , DRAIN CURRENT (A)
12
TJ = 25oC
1.0
0.1
0
0
102
15
10
2
5
5
VDS , DRAIN TO SOURCE VOLTAGE (V)
15
1.2
0.3
0.6
0.9
VSD , SOURCE TO DRAIN VOLTAGE (V)
1.5
20
ID = 8A
16
VDS = 100V
12
VDS = 250V
VDS = 400V
0
0
12
24
36
48
60
IRF840 Rev. B
IRF840
Test Circuits and Waveforms
VDS
BVDSS
L
tP
VARY tP TO OBTAIN
RG
VGS
VDS
IAS
VDD
VDD
DUT
tP
0V
IAS
0
0.01
tAV
tON
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
RG
VDD
10%
10%
DUT
90%
VGS
VGS
0.2F
50%
PULSE WIDTH
10%
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
12V
BATTERY
50%
VDD
Qg(TOT)
SAME TYPE
AS DUT
50k
Qgd
0.3F
VGS
Qgs
D
VDS
DUT
0
Ig(REF)
0
IG CURRENT
SAMPLING
RESISTOR
VDS
ID CURRENT
SAMPLING
RESISTOR
Ig(REF)
0
IRF840 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H4