AO4427

30V P-Channel MOSFET

General Description

Product Summary

The AO4427 uses advanced trench technology to

provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected.

VDS (V) = -30V

ID = -12.5 A (VGS = -20V)
RDS(ON) < 12m (VGS = -20V)
RDS(ON) < 14m (VGS = -10V)
ESD Rating: 2KV HBM

100% UIS Tested

100% Rg Tested

SOIC-8
Top View
D
D

Bottom View

D
D

G
G
S

S
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage

VGS
TA=25C

Continuous Drain
Current AF

TA=70C
TA=25C

Power Dissipation

Junction and Storage Temperature Range

Maximum Junction-to-Lead C

Alpha & Omega Semiconductor, Ltd.

25

ID

-10.5

IDM

-60
W

2.1

TJ, TSTG

-55 to 150

Symbol
t 10s
Steady-State
Steady-State

PD

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A

Units
V

-12.5

Pulsed Drain Current B

A

Maximum
-30

RJA
RJL

Typ
28
54
21

Max
40
75
30

Units
C/W
C/W
C/W

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AO4427

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS

Conditions

Min

ID=-250A, VGS=0V

-30

IGSS

Gate-Body leakage current

VDS=0V, VGS=25V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.7

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-60

TJ=55C

-5

VGS=-20V, ID=-12.5A
TJ=125C

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg
Total Gate Charge

12
14

2330
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-15V,
ID=-12.5A

3.4

m
m
m
S

-1

-4.2

2900

pF

480

pF

320

448

pF

6.8

10

41

52

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=-12.5A, dI/dt=100A/s

28

Qrr

Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/s

20

VGS=-10V, VDS=-15V, RL=1.2,

RGEN=3

15

24

VDS=-5V, ID=-12.5A

-3

9.4

32

Diode Forward Voltage

10

12.2
11.5

Forward Transconductance

VGS=-10V, ID=-10A

VSD

Coss

-2.5

VGS=-4.5V, ID=-5A
gFS

Units

-1

Zero Gate Voltage Drain Current

Static Drain-Source On-Resistance

Max

VDS=-30V, VGS=0V

IDSS

RDS(ON)

Typ

nC

10

nC

12

nC

12.8

ns

10.3

ns

49.5

ns

29

ns
35

ns
nC

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t 10s junction to ambient thermal resistance rating.
Rev8: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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AO4427

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25

30
-6V

-10V

VDS=-5V

-5V

20

20
15
-ID(A)

-ID (A)

-4.5V

125C

10
10
VGS=-4V

0
0

2
3
4
-VDS (Volts)
Figure 1: On-Region Characteristics

12

1.5

2.5
3
3.5
4
4.5
-VGS(Volts)
Figure 2: Transfer Characteristics

Normalized On-Resistance

1.6

11
RDS(ON) (m )

25C

VGS=-10V
ID=-10A

1.4

VGS=-10V

VGS=-10V, VDS=-15V,
10

ID=-12.5A

1.2

VGS=-20V

VGS=-20V
ID=-12.5A
1

0.8
0

10

15

20

25

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

50

1.0E+01
ID=-12.5A
1.0E+00

40

-IS (A)

RDS(ON) (m )

1.0E-01
125C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-02
COMPONENTS IN LIFE SUPPORT DEVICES
125COR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF
1.0E-03 THE RIGHT TO IMPROVE PRODUCT DESIGN,
20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-04
25C

10

25C
1.0E-05

1.0E-06
4

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO4427

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

3000

10
VDS=-15V
ID=-12.5A
Capacitance (pF)

-VGS (Volts)

Ciss

2500

2000
1500
Coss
1000

Crss

500

0
0

10

15

20
25
30
35
40
-Qg (nC)
Figure 7: Gate-Charge Characteristics

45

100.0

10

15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics

30

40
RDS(ON)
limited

100s

TJ(Max)=150C
TA=25C

10s
30

-ID (Amps)

V
10ms
GS=-10V, VDS=-15V,
0.1s

1.0

1s

DC

0
0.001

10

100

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

Z JA Normalized Transient
Thermal Resistance

20

10

0.1

10

ID=-12.5A

10s

TJ(Max)=150C
TA=25C
0.1

Power (W)

1ms
10.0

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=40C/W

0.01

0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
PD
FUNCTIONS
AND RELIABILITY WITHOUT NOTICE.
0.1
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

0.01

100

1000

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