2N2222A

Small Signal Switching

Transistor
NPN Silicon
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Features

MILPRF19500/255 Qualified
Available as JAN, JANTX, and JANTXV

COLLECTOR
3
2
BASE

MAXIMUM RATINGS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Value

Unit

Collector Emitter Voltage

VCEO

50

Vdc

Collector Base Voltage

VCBO

75

Vdc

Emitter Base Voltage

VEBO

6.0

Vdc

Collector Current Continuous

IC

800

mAdc

Total Device Dissipation @ TA = 25C

PT

500

mW

Total Device Dissipation @ TC = 25C

PT

1.0

TJ, Tstg

65 to
+200

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

325

C/W

Thermal Resistance, Junction to Case

RqJC

150

C/W

Operating and Storage Junction

Temperature Range

1
EMITTER

TO18
CASE 206AA
STYLE 1

THERMAL CHARACTERISTICS
Characteristic

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION
Device

Package

Shipping

TO18

Bulk

JAN2N2222A
JANTX2N2222A
JANTXV2N2222A

Semiconductor Components Industries, LLC, 2013

November, 2013 Rev. 2

Publication Order Number:

2N2222A/D

2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic

Symbol

Min

Max

Unit

V(BR)CEO

50

Vdc

10
10

mAdc
nAdc

10
10

mAdc
nAdc

50

nAdc

50
75
100
100
30

325

300

0.3
1.0

0.6

1.2
2.0

2.5

50

25

8.0

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc)
CollectorBase Cutoff Current
(VCB = 75 Vdc)
(VCB = 60 Vdc)

ICBO

EmitterBase Cutoff Current

(VEB = 6.0 Vdc)
(VEB = 4.0 Vdc)

IEBO

CollectorEmitter Cutoff Current

(VCE = 50 Vdc)

ICES

ON CHARACTERISTICS (Note 1)
hFE

DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

Base Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

Vdc

Vdc

SMALL SIGNAL CHARACTERISTICS

Magnitude of SmallSignal Current Gain
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

|hfe|

SmallSignal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz)

hfe

Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz)

Cibo

Output Capacitance
(VCB = 10 Vdc, IE = 0,100 kHz f 1.0 MHz )

Cobo

pF
pF

SWITCHING (SATURATED) CHARACTERISTICS

TurnOn Time
(Reference Figure in MILPRF19500/255)

ton

35

ns

TurnOff Time
(Reference Figure in MILPRF19500/255)

toff

300

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.

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2

2N2222A
400

1.2

150C
VBESAT, BASEEMITTER
SATURATION VOLTAGE (V)

300
250

25C

200
150

55C

100
50
0
0.1

VCE = 10 V
1

VCESAT, COLLECTOREMITTER
SATURATION VOLTAGE (V)

0.4

10

100

0.8
25C
0.6

150C

0.4
0.2
IC/IB = 10
1

10

100

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

Figure 2. BaseEmitter Saturation Voltage

1.1

0.3
150C
0.2

25C
55C

0.1

10

VCE = 1 V

1.0

55C

0.9
0.8

25C

0.7
0.6

150C

0.5
0.4
0.3
0.2
0.1
0
0.1

100

10

100

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 3. CollectorEmitter Saturation Voltage

Figure 4. BaseEmitter Voltage

1.0

25
100 mA
IC = 10 mA

CIBO, INPUT CAPACITANCE (pF)

VCESAT, COLLECTOREMITTER
SATURATION VOLTAGE (V)

55C

IC, COLLECTOR CURRENT (mA)

IC/IB = 10

0
0.1

1.0

0
0.1

VBEON, BASEEMITTER VOLTAGE

(V)

hFE, DC CURRENT GAIN

350

300 mA

0.10
500 mA

0.01
0.01

TJ = 25C
fTEST = 10 kHz

20

15

10

0
0.10
1
IB, BASE CURRENT (mA)

10

VBE, BASEEMITTER (V)

Figure 5. Collector Saturation Region

Figure 6. Input Capacitance

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3

2N2222A
350

ft, CURRENT GAIN BANDWIDTH (MHz)

COBO, INPUT CAPACITANCE (pF)

25

TJ = 25C
fTEST = 10 kHz

300

20

250

15

200
150

10

100

0
0

4
6
8
12
14 16
10
VBC, BASECOLLECTOR VOLTAGE (V)

18

20

50
0
1

Figure 7. Output Capacitance

10
IC, COLLECTOR CURRENT (mA)

Figure 8. Current Gain Bandwidth Product

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4

100

2N2222A
PACKAGE DIMENSIONS
TO18 3
CASE 206AA
ISSUE A
B
A
B

DETAIL X

C
L

U
A

SEATING
PLANE

NOTE 5

E
T
NOTE 7

D NOTES 4 & 6
0.007 (0.18MM) A B S C

DETAIL X

3X

N
H

2
1

M
C

LEAD IDENTIFICATION
DETAIL

NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U

MILLIMETERS
MIN
MAX
5.31
5.84
4.52
4.95
4.32
5.33
0.41
0.53
--0.76
0.41
0.48
0.91
1.17
0.71
1.22
12.70
19.05
6.35
--45_BSC
2.54 BSC
--1.27
1.37 BSC
--0.76
2.54
---

INCHES
MIN
MAX
0.209
0.230
0.178
0.195
0.170
0.210
0.016
0.021
--0.030
0.016
0.019
0.036
0.046
0.028
0.048
0.500
0.750
0.250
--45 _BSC
0.100 BSC
--0.050
0.054 BSC
--0.030
0.100
---

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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2N2222A/D