An Approach For Optimization of

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No.
1, June 2015
AN APPROACH FOR OPTIMIZATION OF

MANUFACTURE MULTIEMITTER
HETEROTRANSISTORS
E.L. Pankratov1 and E.A. Bulaeva2
1
Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950,

Russia
2
Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky
street, Nizhny Novgorod, 603950, Russia
ABSTRACT
In this paper we introduced an approach to model manufacture process of a multiemitter heterotransistor.
The approach gives us also possibility to optimize manufacture process. p-n-junctions, which include into
the multiemitter heterotransistor, have higher sharpness and higher homogeneity of dopants distributions
in enriched by the dopant area.
KEYWORDS
Multiemitter heterotransistor, Approach to optimize technological processes.
1. INTRODUCTION
Logical elements often include into itself multiemitter transistors [1-4]. To manufacture bipolar
transistors it could be used dopant diffusion, ion doping or epitaxial layer [1-8]. It is attracted an
interest increasing of sharpness of p-n-junctions, which include into bipolar transistors and
decreasing of dimensions of the transistors, which include into integrated circuits [1-4].
Dimensions of transistors will be decreased by using inhomogenous distribution of temperature
during laser or microwave types of annealing [9,10], using defects of materials (for example,
defects could be generated during radiation processing of materials) [11-14], native
inhomogeneity (multilayer property) of heterostructure [12-14].
Framework this paper we consider a heterostructure, which consist of a substrate and three
epitaxial layers (see Fig. 1). Some dopants are infused in the epitaxial layers to manufacture p and
n types of conductivities during manufacture a multiemitter transistor. Let us consider two cases:
infusion of dopant by diffusion or ion implantation. Farther in the first case we consider annealing
of dopant so long, that after the annealing the dopants should achieve interfaces between epitaxial
layers. In this case one can obtain increasing of sharpness of p-n-junctions [12-14]. The
increasing of sharpness could be obtained under conditions, when values of dopant diffusion
coefficients in last epitaxial layers is larger, than values of dopant diffusion coefficient in average
epitaxial layer. At the same time homogeneity of dopant distributions in doped areas increases. It
is attracted an interest higher doping of last epitaxial layers, than doping of average epitaxial
layer, because the higher doping gives us possibility to increase sharpness of p-n-junctions. It is
1
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
also practicably to choose materials of epitaxial layers and substrate so; those values of dopant
diffusion coefficients in the substrate should be smaller, than in the epitaxial layer. In this
situation one can obtain thinner transistor. In the case of ion doping of heterostructure it should be
done annealing of radiation defects. It is practicably to choose so regimes of annealing of
radiation defects, that dopant should achieves interface between epitaxial layers. At the same time
the dopant could not diffuse into another epitaxial layer. If dopant did not achieves interface
between epitaxial layers during annealing of radiation defects, additional annealing of dopant
required.
Main aims of the present paper are analysis of dynamics of redistribution of dopants in considered
heterostructure (Figs. 1) and optimization of annealing times of dopants. In some recent papers
analogous analysis have been done [4,10,12-14]. However we can not find in literature any
similar heterostructures as we consider in the paper.
n-type dopant
Epitaxial
layer 1
p-type dopant
Epitaxial
layer 2
n-type dopant
Epitaxial
layer 3
Substrate
Fig. 1a. Heterostructure, which consist of a substrate and three epitaxial layers. View from above
n-type dopant 1
n-type dopant 2
n-type dopant 3
p-type dopant
n-type dopant
Epitaxial layer 2
Epitaxial layer 3
n-type dopant 4
Epitaxial layer 1
Fig. 1b. Heterostructure, which consist of a substrate and three epitaxial layers. View from one side
2. Method of Analysis
Redistribution of dopant in the considered heterostructure
Ficks low [1-4]
has been
described by the second
C ( x, y , z , t ) C ( x , y , z , t ) C ( x, y , z , t ) C ( x, y , z , t )
=
DC
+
DC
+
DC
(1)
t
x
x
y
z
y
z
with boundary and initial conditions

C (x, y, z , t )
C ( x, y , z , t )
C ( x, y , z , t )
C (x, y, z , t )
= 0,
=0,
=0,
=0,
x
y
y
x= Lx
y =0
x =0
y=Ly
C ( x, y , z , t )
C (x, y, z , t )
= 0,
= 0 , C (x,y,z,0)=fC (x,y,z).
z
z
z =0
z = Lz
(2)
Here C(x,y,z,t) is the spatio-temporal distribution of concentration of dopant; x, y, z and t are

current coordinates and times; D is the dopant diffusion coefficient. Value of dopant diffusion
coefficient depends on properties of materials in layers of heterostructure, speed of heating and
cooling of heterostructure (with account Arrhenius low), spatio-temporal distributions of
concentrations of dopants and radiation defects. Two last dependences of dopant diffusion
coefficient could be approximated by the following relation [15,16]
C ( x, y , z , t )
V ( x, y , z , t )
V 2 ( x, y , z , t )
.
+2
DC = DL ( x, y , z, T ) 1 +
1 + 1
*
P ( x, y , z , T )
V
(V * )2
(3)
Here DL (x,y,z,T) is the spatial (due to inhomogeneity () of heterostructure) and

temperature (due to Arrhenius low) dependences of dopant diffusion coefficient; P (x,y,z,T) is the
limit of solubility of dopant; parameter depends of properties of materials and could be integer
in the interval [1,3] [15]; V (x,y,z,t) is the spatio-temporal distribution of concentration of
radiation vacancies; V* is the equilibrium distribution of vacancies. Concentrational dependence
of dopant diffusion coefficient has been discussed in details in [15]. It should be noted, that
radiation damage absents in the case of diffusion doping of haterostructure. In this situation 1=
2= 0. Spatio-temporal distributions of concentrations of point radiation defects could be
determine by solution of the following system of equations [17-19]
I ( x, y , z , t )
I ( x, y , z , t )
I ( x, y , z , t ) 2
=
DI ( x, y , z , T )
+
DI ( x, y , z , T )
I (x, y , z , t )
t
x
x
y
y
k I , I ( x, y , z , T ) +

I ( x, y , z , t )
k I ,V ( x, y , z, T ) I (x, y , z, t ) V (x, y , z , t ) (4)
DI (x, y , z , T )
z
z
V ( x, y , z , t )
V (x, y , z , t )
V ( x, y , z , t )
2
=
DV (x, y , z , T )
+
DV (x, y , z, T )
V ( x, y , z , t )
t
x
x
k V ,V ( x, y , z, T ) +
V ( x, y , z , t )

DV (x, y , z , T )
k I ,V ( x , y , z , T ) I ( x , y , z , t ) V ( x , y , z , t )
z
z
with initial
(x,y,z,0)=f (x,y,z)
(5a)
and boundary conditions

( x, y , z , t )
(x, y, z , t )
(x, y, z , t )
=0,
= 0.
= 0,
z
z
y
z = Lz
y=Ly
z =0
(5b)
Here =I,V; I (x,y,z,t) is the spatio-temporal distribution of concentration of interstitials; D(x,y,

z,T) are diffusion coefficients of interstitials and vacancies; terms V2(x,y, z,t) and I2(x,y,z,t)
correspond to generation of divacancies and analogous complexes of interstitials; kI,V(x,y,z,T),
kI,I(x,y,z,T) and kV,V(x,y,z,T) parameters of recombination of point radiation defects and generation
of complexes.
Spatio-temporal distributions of concentrations of divacancies V(x,y,z,t) and analogous
complexes of interstitials I(x,y,z,t) will be determined by solving the following systems of
equations [17-19]
I (x, y, z, t )
I (x, y, z, t )
I ( x, y, z, t )
=
DI (x, y, z, T )
+
DI ( x, y, z, T )
+
t
x
x
y
y
I (x, y, z, t )

2
DI (x, y, z, T )
+ k I , I (x, y, z, T ) I (x, y, z, t ) k I (x, y, z, T ) I (x, y, z, t ) (6)
z
z
V (x, y, z, t )
V (x, y, z, t )
V (x, y, z, t )
=
DV (x, y, z, T )
+
DV (x, y, z, T )
+
t
x
x
y
y
V (x, y, z, t )

2
DV (x, y, z, T )
+ k V ,V (x, y, z, T ) V (x, y, z, t ) k V (x, y, z, T ) V (x, y, z, t )
z
z
with boundary and initial conditions

( x, y , z , t )
( x, y , z , t )
( x, y , z , t )
( x, y , z , t )
=0,
= 0,
=0,
=0,
x
x
y
y
x=0
x = Lx
y =0
y=Ly
+
(x, y , z , t )
( x, y , z , t )
=0,
= 0 , I(x,y,z,0)=fI (x,y,z), V(x,y,z,0)=fV (x,y,z). (7)
z
z
z = Lz
z =0
Here DI(x,y,z,T) and DV(x,y,z,T) are diffusion coefficients of complexes of point radiation
defects; kI(x,y,z,T) and kV(x,y,z,T) are parameters of decay of the complexes.
To determine spatio-temporal distributions of concentrations of complexes of radiation defects we
used considered in Refs. [14,19] approach. Framework the approach we transform approximations of diffusion coefficients of complexes of point radiation defects to the following form:
D (x,y,z,T) = D0 [1+ g (x,y,z,T)] and kI,V (x,y,z,T)=k0I,V[1+ h(x,y,z,T)], where D0 and k0I,V are
the average values of appropriate parameters, 0V <1, 0<1, | g(x,y,z,T)|1, |h(x,y,z,T)|1. Let
(x, y, z , t )
us introduced the following dimensionless variables: ~ (x, y , z , t ) =
, = x/Lx, = y/Ly,
*
1 1 1
I *V *
,
+ 2 + 2 , = k 0 I ,V (L2x + L2y + L2z )
2
D0 I D0V
Lx Ly Lz
= z/Lz, = t D0 I V D0V V
bx = 1 +
L2x L2x
,
+
L2y L2z
4
by = 1 +
L2y
L2y
, bz = 1 +
L2x L2z
the following form
L2z L2z
. Using the above variables leads to transformation Eqs. (4) to
+
L2x L2y
~
D0 I
I ( , , , ) 1 D0 I
[1 + I g I ( , , , T )]
+
D 0V

b y D 0V
~
~
I ( , , , )
I ( , , , ) 1

[
1
+
g
(
,
,
,
T
)
]
+
[
1
+
g
(
,
,
,
T
)
]
I
I
I
I

bz
I ( , , , ) 1
=
bx
D0 I
V*
~
~
* [1 + h ( , , , T )] I ( , , , ) V ( , , , )
D0V
I
(8)
~
D 0V
V ( , , , ) 1 D0V
[1 + V g V ( , , , T )]
+
D0 I

b y D0 I
~
~
V ( , , , )
V ( , , , )

[
(
)
]
[
(
)
]
1
+
g
,
,
,
T
+
1
+
g
,
,
,
T
V
V
V
V
V ( , , , ) 1
=
bx
1 D0V
I*
[1 + h ( , , ,T )] I~( , , , ) V~( , , , ) .
*
bz D0 I
V
We will determine solution of Eqs. (8) as the following power series
i=0
j =0
k =0
~ ( , , , ) = i~ j k ~ijk ( , , , ) .
(9)
Substitution of the series into Eqs. (8) gives us possibility to obtain system of equations for
initial-order approximations of concentrations of defects ~000(,, ,) and corrections for them
~ ( , , , ) (i1, j1, k1). The equations are presented in Appendix.
ijk
Substitution of the series (9) into appropriate boundary and initial conditions gives us possibility
~ ,, , . The conditions dard
to obtain boundary and initial conditions for the functions
ijk
approaches [21,22], are presented in Appendix. and solutions for the functions ~ ( , , , )
ijk
(i0, j0, k0), which have been obtained by stan

Farther we determine spatio-temporal distributions of concentrations of point radiation defects.
To calculate the distributions we transform approximations of diffusion coefficients to the
following form: DI(x,y,z,T)=D0I[1+IgI(x,y,z,T)], DV(x,y,z,T)= D0V[1+VgV (x,y,z,T)]. In
this situation Eqs. (6) will be transform to the following form
I (x, y , z , t )
I ( x, y , z , t )
=
[1 + I g I (x, y , z , T )]
+
[1 + I g I ( x, y, z, T )]
x
t
y
x
I ( x, y , z , t )
2
D 0 I k I ( x , y , z , T ) I ( x, y , z , t ) + k I , I ( x, y , z , T ) I ( x, y , z , t )
y
V ( x, y , z , t )
V ( x, y , z , t )
=
[1 + V g V ( x, y , z, T )]
+
[1 + V g V (x, y , z , T )]
x
t
y
x
V ( x, y , z , t )
2
D0 V k V ( x, y, z , T ) V (x, y , z , t ) + k V ,V (x, y , z, T )V ( x, y, z, t ) .
y
We determine solutions of these equations as the following power series
(x, y , z, t ) = i i ( x, y , z, t ) ,
(10)
i =0
where =I,V. Substitution of the series (10) into Eqs. (6) and appropriate boundary and initial
conditions gives us possibility to obtain equations for initial-order approximations of
concentrations of complexes of point radiation defects, corrections for them, boundary and initial
conditions for all above functions. The equations, conditions and solutions, which have been
obtained by standard approaches [21,22], are presented in the Appendix.
Analysis of spatio-temporal distributions of concentrations of radiation defects has been done by
using the second-order approximations on parameters, which used in appropriate series, and have
been defined more precisely by using numerical simulation.
Farther we determine solution of the Eq.(1). To calculate the solution we used the approach,
which has been considered in [13,18]. Framework the approach we transform approximation of
dopant diffusion coefficient DL(x,y,z,T) into following form: DL(x,y,z,T) =D0L[1+ L gL(x,y,z,T)].
We determine solution of the Eq.(1) as the following power series
i =0
j =0
C ( x, t ) = Li j C ij ( x, t ) .
(11)
Substitution of the series into Eq. (1) gives us possibility to obtain system of equations for initialorder approximation of dopant concentration C00(x,y,z,t) and corrections for them Cij(x,y,z,t) (i1,
j1). Substitution of the series (11) into appropriate boundary and initial conditions for the
functions Cij(x,y,z,t) (i0, j0)
Cij (x, y , z, t )
Cij ( x, y, z, t )
Cij (x, y, z, t )
Cij ( x, y , z, t )
=0;
=0;
= 0;
= 0;
x
x
y
y
x =0
x = Lx
y =0
y =Ly
Cij (x, y, z, t )
Cij (x, y, z, t )
=0;
= 0 ; C00(x,y,z,0)=fC (x,y,z); Cij(x,y,z,0)=0, i0, j0.
z
z
z = Lz
z =0
Solutions of equations for the functions Cij(x,y,z,t) (i0, j0), which has been calculated by
standard approaches [21,22], are presented in the Appendix.
Analysis of spatio-temporal distribution of dopant concentration has been done analytically by
using the second-order approximation on parameters, which has been used in appropriate series
and have been defined more precisely by using numerical simulation.
3. Discussion
In this section we analyzed dynamics of redistribution of dopant with account relaxation of
distributions of concentrations of radiation defects (in the case of ion doping of heterostructure).
The Figs. 2 show distributions of concentrations of infused and implanted dopants in one of last
epitaxial layers in direction, which is perpendicular to interfaces between epitaxial layers, after
annealing of dopant and/or radiation defects, respectively. In this case values of dopant diffusion
coefficient in last epitaxial layers is larger, than value of dopant diffusion coefficient in average
epitaxial layer. The figures show, that interfaces between epitaxial layers under the above
conditions give us possibility to increase sharpness of p-n-junctions and at the same time to
increase homogeneity of distributions of concentrations of dopants in enriched by the dopants
areas.
The Figs. 3 show distributions of concentrations of infused and implanted dopants in one of last
epitaxial layers in direction, which is perpendicular to interfaces between epitaxial layers, after
annealing of dopant and/or radiation defects, respectively. In this case values of dopant diffusion
coefficient in last epitaxial layers is smaller, than value of dopant diffusion coefficient in average
epitaxial layer. The figures show, that presents of last epitaxial layers leads to increasing of
homogeneity of dopant in the average epitaxial layers. However sharpness of p-n-junctions
decreases in comparison with p-n-junctions for Figs. 2. In this case one can obtain accelerated
diffusion in last epitaxial layers. The decreasing of sharpness of p-n-junctions is a reason to use
higher level of doping of last epitaxial layer to use nonlinearity of dopant diffusion. In this case
one obtain n+-p-n+ and/or p+-n-p+ structures.
1
1.5
2
3
4
1.0
C(x,)
Interface
5
6
Epitaxial
layer1
0.5
Epitaxial
layer2
0.0
0
L/4
L/2
x
3L/4
Fig. 2a. Distributions of concentrations of infused dopant in heterostructure from Fig. 1. Increasing of
number of curves corresponds to increasing of difference between values of dopant diffusion coefficient
2.0
1
2
C(x,)
1.5
3
Interface
1.0
Epitaxial
layer1
Epitaxial
layer2
0.5
0.0
L/4
3L/4
L/2
x
Fig. 2b. Distributions of concentrations of implanted dopant in heterostructure from Fig. 1. Increasing of
number of curves corresponds to increasing of difference between values of dopant diffusion coefficient
1.5
1
2
3
C(x,)
1.0
0.5
0.0
-a1 =-L/3
a=2L/3
Fig. 3a. Distributions of concentration of infused in average epitaxial layer dopant in the heterostructure in
Fig. 1 without another epitaxial layers (curve 1) and with them for the case, when dopant diffusion
coefficient in the average epitaxial layer is smaller in comparison with dopant diffusion coefficients in
another layers (curves 2 and 3). Increasing of number of curves corresponds to increasing of difference
between values of dopant diffusion coefficients epitaxial layers of heterostructure
fC(x)
1.00000
C(x,)
0.10000
0.01000
0.00100
0.00010
0.00001
0
L/4
L/2 x
x
3L/4
Fig. 3b. Distributions of concentration of implanted in average epitaxial layer dopant in the heterostructure
in Fig. 1 without another epitaxial layers (curve 1) and with them for the case, when dopant diffusion
coefficient in the average epitaxial layer is smaller in comparison with dopant diffusion coefficients in
another layers (curves 2 and 3). Increasing of number of curves corresponds to increasing of difference
between values of dopant diffusion coefficients epitaxial layers of heterostructure
Optimal value of annealing time we determine framework recently introduced criterion [12-14].
Framework the criterion we approximate real distributions of dopant by step-wise function and
minimize the following mean-squared error
U=
1L
2
[C (x, ) ( x )] d x
L0
(12)
at annealing time . Dependences of the optimal value of annealing time from different
parameters are presented on Figs. 4.
0.5
D0 L
-2
0.4
0.3
3
0.2
1
0.1
0.0
0.0
0.1
0.2
0.3
a/L, , ,
0.4
0.5
Fig. 4a. Dependences of dimensionless optimal value of annealing time of infused dopant, which has been
calculated by minimization the mean-squared error (12), on different parameters of heterostructure. Curve 1
is the dependence of annealing time on relation a/L, = = 0 and equal to each other values of dopant
diffusion coefficient in epitaxial layers. Curve 2 is the dependence of annealing time on parameter for
a/L=1/2 and = = 0. Curve 3 is the dependence of annealing time on parameter for a/L=1/2 and = = 0.
Curve 4 is the dependence of annealing time on parameter for a/L=1/2 and = = 0
0.12
2
0.08
D0 L
-2
0.04
0.00
0.0
0.1
0.2
0.3
a/L, , ,
0.4
0.5
Fig. 4b. Dependences of dimensionless optimal value time of additional annealing of implanted dopant,
which has been calculated by minimization the mean-squared error (12), on different parameters of
heterostructure. Curve 1 is the dependence of annealing time on relation a/L, = = 0 and equal to each
other values of dopant diffusion coefficient in epitaxial layers. Curve 2 is the dependence of annealing time
on parameter for a/L=1/2 and = = 0. Curve 3 is the dependence of annealing time on parameter for
a/L=1/2 and = = 0. Curve 4 is the dependence of annealing time on parameter for a/L=1/2 and = = 0
The figures show, that optimal values of annealing time after ion implantation are smaller, than
optimal values of annealing time after infusion of dopant. Reason of the difference is necessity to
use annealing of radiation defects after ion implantation. After that (if necessary) it could be used
additional annealing of dopant. One can obtain spreading of distribution of concentration during
annealing of radiation defects. Increasing of annealing time with increasing of thickness of
epitaxial layer is the consequence of necessity of higher time for dopant to achieve interfaces
between epitaxial layers of heterostructure. Decreasing of annealing time with increasing of
values of parameters and is the consequence of increasing of values of dopant diffusion
coefficient in the area, where main part of dopant has been diffused. Increasing of annealing time
with increasing of the parameter is the consequence of decreasing of the term [C (x,y,z,t)/ P
(x,y,z,T)] in approximation of dopant diffusion coefficient (3) with increasing of the parameter ,
because dopant concentration did not usually achieved value of limit of solubility of dopant and
parameter is not smaller, than 1.
4. Conclusion
In this paper we introduce an approach of manufacturing multiemitter heterotransistors.
Framework the approach the considered transistors became more compact and will include into
itself p-n-junctions with higher sharpness.
ACKNOWLEDGEMENTS
This work is supported by the contract 11.G34.31.0066 of the Russian Federation Government,
grant of Scientific School of Russia and educational fellowship for scientific research.
APPENDIX
Equations and conditions for functions
~
~ijk ( , , , ) (i0, j0, k0) could be written as

~
D0 I 1 2 I 000 ( , , , ) 1 2 I 000 ( , , , ) 1 2 I 000 ( , , , )

I 000 ( , , , )
=
+
+
D0V b x
2
by
2
bz
2
~
2 ~
2 ~
2 ~
D0V 1 V000 ( , , , ) 1 V000 ( , , , ) 1 V000 ( , , , )
V000 ( , , , )
=
+
+
2
2
2
D0 I b x
by
bz
~
~
~
~
D0 I 1 2 I i 00 ( , , , ) 1 2 I i 00 ( , , , ) 1 2 I i 00 ( , , , )
I i 00 ( , , , )
=
+
+
D0V bx
2
by
2
bz
2
~
~
I i 100 ( , , , ) 1
I i 100 ( , , , )
D0 I 1
+
g I ( , , , T )
+
g I ( , , , T )
+
D0V b x
b y
10
~
I i 100 ( , , , )
1
g I ( , , , T )
, i 1;
bz

~
~
~
~
D0V 1 2 Vi 00 ( , , , ) 1 2 Vi 00 ( , , , ) 1 2 Vi 00 ( , , , )
Vi 00 ( , , , )
=
+
+
D0 I bx
2
by
2
bz
2
~
~
Vi 100 ( , , , ) 1
Vi 100 ( , , , )
D0V 1
+
g V ( , , , T )
+
g V ( , , , T )
+
D0 I b x
b y
~
Vi100 ( , , , )
1
+
g V ( , , , T )
, i 1;
bz

~
~
~
~
D0 I 1 2 I 010 ( , , , ) 1 2 I 010 ( , , , ) 1 2 I 010 ( , , , )
I 010 ( , , , )
=
+
+
D0V bx
2
by
2
bz
2
V* ~
~
I 000 ( , , , ) V000 ( , , , ) ;
I*
~
~
~
~
D0 V 1 2 V010 ( , , , ) 1 2 V010 ( , , , ) 1 2 V010 ( , , , )
V010 ( , , , )
=
+
+
D0 I bx
2
by
2
bz
2
V* ~
~
I 000 ( , , , )V000 ( , , , ) ;
*
I
~
~
2 ~
D0 I 1 I 020 ( , , , ) 1 2 I 020 ( , , , ) 1 2 I 020 ( , , , )
+
+
D0V bx
2
by
2
bz
2
I 020 ( , , , )
=
V* ~
V* ~
~
~
I 010 ( , , , )V000 ( , , , )
I 000 ( , , , )V010 ( , , , )
*
I
I*
~
~
~
~
V020 ( , , , )
D0V 1 2 V020 ( , , , ) 1 2 V020 ( , , , ) 1 2 V020 ( , , , )
=
+
+
D0 I bx
2
by
2
bz
2
I* ~
I* ~
~
~
(
)
(
)
I
I 000 ( , , , )V 010 ( , , , ) ;
010
000
*
*
V
V
~
~
~
2 ~
D0 I 1 I 110 ( , , , ) 1 2 I 110 ( , , , ) 1 2 I 110 ( , , , )

I 110 ( , , , )
=
+
+
D0V b x
2
by
2
bz
2
~
~
I 010 ( , , , ) 1
I 010 ( , , , )
D 0 I 1
g I ( , , , T )
+
g I ( , , , T )
+
D 0 V b x
b y
~
I 010 ( , , , ) V * ~
1
V*
~
(
)
g
,
,
,
T
I 100 ( , , , ) V000 ( , , , )
I

*
bz
I
I*

~
~
I 000 ( , , , ) V100 ( , , , ) ;
~
~
~
~
V110 ( , , , )
D0V 1 2 V110 ( , , , ) 1 2 V110 ( , , , ) 1 2 V110 ( , , , )
=
+
+
D0 I bx
2
by
2
bz
2
~
~
D0V 1
V010 ( , , , )
V010 ( , , , ) 1
+
g V ( , , , T )
+
g V ( , , , T )
+
D0 I b x
b y
11
~
V010 ( , , , )
1
I* ~
I*
~
g V ( , , , T )
* I 100 ( , , , )V000 ( , , , )
bz
I
I*

~
~
I 000 ( , , , ) V100 ( , , , ) ;
~
~
~
~
I 00 k ( , , , )
D0 I 1 2 I 00 k ( , , , ) 1 2 I 00 k ( , , , ) 1 2 I 00 k ( , , , )
=
+
+
D0V b x
2
by
2
bz
2
~
2 ~
2 ~
2 ~
V00 k ( , , , )
D0V 1 I 00 k ( , , , ) 1 I 00 k ( , , , ) 1 I 00 k ( , , , )
=
+
+
D0 I bx
2
by
2
bz
2
~
~
~
~
I101 ( , , , )
D0 I 1 2 I 101 ( , , , ) 1 2 I 101 ( , , , ) 1 2 I 101 ( , , , )
=
+
+
2
2
2
D0V bx
by
bz
~
~
D0 I 1
I 001 ( , , , )
I 001 ( , , , ) 1
+
g I ( , , , T )
+
g I ( , , , T )
+
D0V b x
b y
~
I 001 ( , , , )
1
+
g I ( , , , T )
;
bz

~
~
~
~
D0V 1 2 V101 ( , , , ) 1 2 V101 ( , , , ) 1 2 V101 ( , , , )
V101 ( , )
=
+
+
2
2
2
D0 I b x
by
bz
~
~
I 001 ( , , , ) 1
I 001 ( , , , )
D0V 1
+
g V ( , , , T )
+
g V ( , , , T )
+
D0 I b x
b y
~
I 001 ( , , , )
1
+
g V ( , , , T )
;
bz

~
~
~
~
I 011 ( , , , )
D0 I 1 2 I 011 ( , , , ) 1 2 I 011 ( , , , ) 1 2 I 011 ( , , , )
=
+
+
D0V b x
2
by
2
bz
2
V* ~
~
~
~
I 001 ( , , , )V000 ( , , , ) h ( , , , T ) I 000 ( , , , ) V000 ( , , , )
I*
~
~
I 000 ( , , , ) V001 ( , , , )
~
~
~
~
V011 ( , , , )
D0V 1 2 V011 ( , , , ) 1 2 V011 ( , , , ) 1 2 V011 ( , , , )
=
+
+
D0 I bx
2
by
2
bz
2
V* ~
~
~
~
I 001 ( , , , )V000 ( , , , ) h ( , , , T ) I 000 ( , , , ) V000 ( , , , )
*
I
~
~
I 000 ( , , , ) V001 ( , , , ) .
~ijk ( ,, , )
~ijk ( , , , )
~ijk ( , , , )
~ijk ( , , , )
=0;
=0;
=0;
= 0;
=0
~ijk (,, ,)
= 0;
=0
=1
~ijk ( ,, , )
=1
=0
=1
f ( , , )
= 0 , i 1, j 1, k 1; ~000 ( , , ,0 ) =
;
*
~ijk ( , , ,0 ) = 0 , i 1, j 1, k 1.
Solutions of equations for the functions ~ijk ( , , , ) (i0, j0, k0) could be written as
12
1 2
~000 ( , , , ) = + Fn c ( )c ( )c ( )en ( ) ,
L L n =1
where Fn =
2 2
c (u) c (v) c ( w) f n (u, v, w)d wd v d u , cn() = cos ( n ), enI () = exp n D0V D0I ,
enV ( ) = exp 2 n 2 D0 I D0V ;
~i 00 ( , , , ) =
cn (w)
1
i 100
2 D0
n =1
n cn ( )cn ( )cn ( )en ( ) en ( ) s n (u ) cn (v ) g V (u , v, w, T )
bx * Lx Ly Lz
2
(u, v, w, ) d w d v d u d
u
c n (u ) s n (v ) c n (w) g V (u , v, w, T )
0
i 100
2 D0
by * Lx L y Lz
2
(u, v, w, )
v
cn ( )cn ( )en ( ) en ( ) cn (u ) cn (v ) sn (w)
i 100
n =1
n cn ( ) cn ( )cn ( )en ( ) en ( )
d wd vd u d
2 D0
bz * Lx L y Lz
2
n c n ( )
n =1
(u, v, w, ) g (u, v, w, T )d w d v d u d , i 1;
1
1
1
V*
cn ( )cn ( ) cn ( )en I ( ) en I ( ) cn (u ) cn (v ) cn (w )
*
=1
n
0
0
0
0
I
~
~
I 000 (u , v, w, ) V000 (u , v, w, ) d w d v d u d ;
~
I 010 ( , , , ) =
2 D0 I
I * Lx L y Lz
~
V010 ( , , , ) =
2 D0 I
V * Lx Ly Lz
~
I 020 ( , , , ) =
2 D0 I
I * L x L y Lz
1
1
1
I*
c n ( ) c n ( ) c n ( ) e n V ( ) e n V ( ) c n (u ) c n (v ) c n (w)
*
0
0
0
0
V n =1
~
~
I 000 (u , v, w, )V000 (u , v, w, ) d w d v d u d ;
1
1
1
V*
c n ( ) c n ( ) c n ( ) e n I ( ) e n I ( ) c n (u ) c n (v ) c n (w)
*
0
0
0
0
I n =1
2 D0 I
V*
c n ( ) c n ( ) c n ( ) e n I ( )
I * L x L y L z I * n =1
1
1
1
~
~
en I ( ) cn (u ) cn (v ) cn (w) I 000 (u , v, w, ) V010 (u , v, w, ) d w d v d u d ;
~
~
I 010 (u , v, w, ) V000 (u , v, w, ) d w d v d u d
~
V020 ( , , , ) =
0
*
2 D0 I
V * Lx L y Lz
1
1
1
I
cn ( )cn ( )cn ( )en V ( ) en V ( ) cn (u ) cn (v ) cn (w)
*
0
0
0
0
V n=1
2 D0 I
I*
c n ( ) c n ( ) c n ( ) e n V ( )
V * L x L y L z V * n =1
1
1
1
~
~
e n V ( ) c n (u ) c n (v ) c n (w) I 000 (u , v, w, ) V010 (u , v, w, ) d w d v d u d ;
0
0
0
0
~
~
~
~
I 001 ( , , , ) = I 002 ( , , , ) = V001 ( , , , ) = V002 ( , , , ) = 0 ;
~
~
I 010 (u , v, w, )V000 (u , v, w, ) d w d v d u d
~
I 110 ( , , , ) =
2 D0 I
bx I * L2x L y Lz
1
1
1
V*
n cn ( )cn ( ) cn ( )en I ( ) en I ( ) sn (u ) cn (v ) cn (w)
*
0
0
0
0
I n=1
g I (u , v, w, T )
I 010 (u , v, w, )
2 D0 I
d wd vd u d +
b y I * L x L2y L z
u
n en I ( ) cn (u ) sn (v ) cn (w) g I (u , v, w, T )
V*
c n ( ) c n ( ) c n ( ) e n I ( )
I * n =1
I 010 (u , v, w, )
2 D0 I
d wd v d u d +
v
bz I * Lx Ly L2z
13
1
1
1
I 010 (u , v, w, )
V*
d wd v d u d
n cn ( )cn ( ) en I ( ) cn (u ) cn (v ) sn (w) g I (u , v, w, T )
0
0
0
0
w
I * n=1
2 D0 I
I * Lx L y L z
cn ( )en I ( )
1
1
1
V*
~
cn ( )cn ( )cn ( )en I ( ) en I ( ) cn (u ) cn (v ) I 100 (u , v, w, )
*
0
0
0
0
I n=1
1
1
1
2 D0 I V *
~
cn (w) V000 (u , v, w, ) d w d v d u d
cn ( ) en I ( ) en I ( ) cn (u ) cn (v ) cn (w)
*
0
0
0
0
I * L I n=1
~
~
I 000 (u , v, w, )V100 (u , v, w, ) d w d v d u d c n ( ) c n ( ) ;
2 D 0V
bx I * L2x L y L z
~
V110 ( , , , ) =
1
1
1
I*
n c n ( ) c n ( ) c n ( ) e n V ( ) e n V ( ) s n (u ) c n (v ) c n (w)
*
0
0
0
0
V n =1
g V (u , v , w , T )
2 D0V
V 010 (u , v , w , )
d wd vd ud +
u
b y V * L x L 2y L z
I*
n c n ( ) c n ( ) c n ( ) e n V ( )
V * n =1
e n V ( ) c n (u ) s n (v ) c n (w) g V (u , v, w, T )
V010 (u , v, w, )
2 D0 V
d wd vd u d +
v
b zV * L x L y L2z
I*
V*
V (u , v, w, )
n cn ( ) cn ( )cn ( ) en V ( ) cn (u ) cn (v ) sn (w ) gV (u , v, w, T ) 010
d wd v d u d
n =1
0
0
0
0
w
en V ( )
2 D0V
~
~
cn ( ) en V ( ) en V ( ) cn (v ) I 100 (u , v, w, )V000 (u , v, w, ) d w d v d u d
0
0
V * Lx Ly Lz n=1
cn ( )cn ( )
1
1
1
I * 2 D0V I *
~
cn ( ) cn ( )cn ( ) en V ( ) cn (u ) cn (v ) cn (w ) I 000 (u , v, w, )
*
*
n
=
1
0
0
0
0
V
V *L V
~
V100 (u , v, w, ) d w d v d u d e n V ( ) ;
~
I 101 ( , , , ) =
1
1
1
2
n c n ( ) c n ( ) c n ( ) e n I ( ) e n I ( ) s n (u ) c n (v ) g I (u , v, w, T )
2
0
0
0
0
b x I * L x L y L z n =1
cn (w)
I 001 (u , v, w, )
2
d wd v d u d +
cn ( )cn ( )cn ( )en I ( ) en I ( ) cn (u )
2
0
0
u
by I * Lx Ly Lz n=1
I (u , v, w, )
2
n sn (v ) cn (w) g I (u , v, w, T ) 001
d wd v d u d +
n cn ( )cn ( )cn ( )en I ( )
0
0
bz I * n=1
v
1
I (u , v, w, )
1
;
e n I ( ) c n (u ) c n (v ) s n (w) g I (u , v, w, T ) 001
d wd vd u d
0
0
0
0
L x L y L2z
w
1
1
1
2
~
V101 ( , , , ) =
cn ( )cn ( )cn ( )en V ( ) en V ( ) sn (u ) cn (v ) g V (u , v, w, T )
2
0
0
0
0
bxV * Lx Ly Lz n=1
~
V001 (u , v, w, )
2
n cn (w)
d wd v d u d +
n cn ( )cn ( )cn ( )en V ( ) en V ( )
2
0
u
Lx Ly Lz by n=1
~
1
1
1
g (u , v, w, T ) V001 (u , v, w, )
2
cn (u ) s n (v ) cn (w) V
d wd v d u d +
n c n ( )
2
n
0
0
0
V*
bzV * Lx Ly Lz =1
v
~
1
1
1
V001 (u , v, w, )
c n ( ) c n ( ) e n V ( ) e n V ( ) c n (u ) c n (v ) s n (w) g V (u , v, w, T )
d wd vd u d ;
0
0
0
0
w
~
I 011 ( , , , ) =
1
1
1
2
~
c n ( ) c n ( ) c n ( ) en I ( ) en I ( ) c n (u ) c n (v ) I 001 (u, v, w, )
n
=1
0
0
0
0
I * Lx L y Lz
14
V*
2
~
cn (w) V000 (u , v, w, ) d w d v d u d
*
I
I * Lx Ly Lz
V*
(
)
(
)
(
)
(
)
c
en I ( )
n
n
n
n
I
0
I * n=1
2
V*
cn ( ) c n ( )
0
0
0
L x L y Lz I * I * n =1
1
1
1
~
~
cn ( )en I ( ) en I ( ) cn (u ) cn (v ) h (u , v, w, T )cn (w) I 000 (u , v, w, ) V001 (u , v, w, ) d w d v d u d ;
1
1
1
~
~
c n (u ) c n (v ) c n (w) I 000 (u, v, w, )V001 (u, v, w, ) d w d v d u d
~
V011 ( , , , ) =
0
*
2
V * Lx Ly Lz
1
1
1
I
(
)
(
)
(
)
(
)
(
)
(
)
(
)
c
c
u
c
v
c n (w)
n
n
n
n
V
n
V
n
n
0
0
0
0
V * n =1
~
~
I 001 (u , v, w, )V000 (u , v, w, ) d w d v d u d
2
c n ( ) c n ( ) c n ( ) en V ( ) en V ( )
0
V * L x L y L z n =1
1
1
I* 1
2
~
~
c (u ) cn (v ) cn (w) I 000 (u , v, w, )V001 (u , v, w, ) d w d v d u d
c n ( )
* n
0
0
V 0
V * Lx Ly Lz n=1
1
1
1
I*
~
~
e ( ) cn (u ) cn (v ) h (u , v, w, T )cn (w) I 000 (u , v, w, )V001 (u , v, w, ) d w d v d u d
* nV
0
0
0
V 0
c n ( ) c n ( ) en V ( ) .
Equations for the functions i(x,y,z,t) are

2 I 0 ( x, y , z , t ) 2 I 0 ( x, y , z , t ) 2 I 0 ( x, y , z , t )
I 0 ( x, y , z , t )
= D0 I
+
+
+
t
x2
y2
z2
+ k I , I ( x, y , z , T ) I 2 ( x, y , z , t ) k I ( x, y , z , T ) I ( x, y , z , t ) ;
2 V 0 ( x, y , z , t ) 2 V 0 ( x, y , z , t ) 2 V 0 ( x, y , z , t )
V 0 ( x, y , z , t )
= D0 V
+
+
+
t
x2
y2
z2
+ kV ,V ( x, y, z ,T ) V 2 ( x, y, z , t ) kV ( x, y, z , T )V ( x, y, z , t ) ;
I i ( x, y , z , t )
2 I i ( x, y , z , t )
2 I i ( x, y , z , t )
2 I i ( x, y , z , t )
= D0 I
+
D
+
D
+
0 I
0 I
t
x2
y2
z2
I i1 (x, y, z, t )
I i1 ( x, y, z , t )

+ D0 I
g I ( x, y , z , T )
+ D0 I
g I ( x, y , z , T )
+
x
x
y
y
+ D 0 I
I i 1 (x, y, z , t )

g I ( x , y , z , T )
, i1;
z
z
V i ( x, y , z , t )
2 V i (x, y , z , t )
2 V i ( x, y , z , t )
2 V i ( x, y , z , t )
= D0 V
+
D
+
D
+
0 V
0 V
t
x2
y2
z2
V i 1 (x, y, z , t )
V i 1 ( x, y, z, t )

+ D 0 V
g V ( x , y , z , T )
+ D 0 V
g V ( x, y , z , T )
+
x
x
y
y
+ D 0 V
i ( x, y , z , t )
x
=0,
i ( x, y , z , t )
x =0
i ( x, y , z , t )
=0,
z =0
V i 1 (x, y , z , t )

g V ( x , y , z , T )
, i1;
z
z
=0,
x= Lx
i ( x, y , z , t )
z
i ( x, y , z , t )
y
= 0,
y =0
i ( x, y , z , t )
y
= 0,
y =Ly
= 0 , i0; I0(x,y,z,0)=fI (x,y,z), Ii(x,y,z,0)=0,

z = Lz
15
V0(x,y,z,0)=fV (x,y,z), Vi(x,y,z,0)=0, i1.

Solutions of the equations could be written as
1
2
0 ( x, y , z , t ) =
+
Fn c ( x )c ( y )c ( z )en (t ) ,
Lx L y Lz Lx L y Lz n=1
Ly
Lx
Lz
1 1 1
where en (t ) = exp 2 n 2 D0 t 2 + 2 + 2 , Fn = cn (x ) cn ( y ) cn (z ) f (x, y, z ) d z d y d x ,
L L L
0
0
0
y
z
x
cn() = cos ( n /L);

Ly
Lx
Lz
t
2
i ( x, y , z , t ) = 2
n cn (x )cn ( y )cn ( z )e n (t ) e n ( ) sn (u ) cn (v ) cn (w) g (u , v, w.T )
0
0
0
0
Lx Ly Lz n=1
I i1 (u , v, w, )
u
d w d v d u d
Lz
cn (w) g (u , v, w.T )
Ly
Lx
t
2
n cn ( x )cn ( y )cn (z )e n (t ) e n ( ) cn (u ) s n (v )
2
0
0
0
Lx Ly Lz n=1
I i1 (u, v, w, )
v
Lx
Ly
d w d v d u d
2
n cn (x )cn ( y )cn ( z )e n (t )
Lx Ly L2z n=1
Lz
I i 1 (u , v, w, )
e n ( ) c n (u ) c n (v ) s n (w) g (u , v, w.T )
d w d v d u d , i1,
where sn() = sin ( n/L).

System of equations for functions Cijk(x,y,z,t) (i0, j0, k0) could be written as
2 C 00 ( x, y, z , t ) 2 C 00 (x, y , z , t ) 2 C 00 ( x, y , z , t )
C 00 ( x, y, z , t )
= D0 L
+
+
;
t
x2
y2
z2
C i 0 ( x, y , z , t )
2 C i 0 ( x, y , z , t )
2 C i 0 ( x, y , z , t )
2 C i 0 (x, y , z , t )
= D0 L
+
D
+
D
+
0L
0L
t
x2
y2
z2
+ D0 L
C i 10 ( x, y , z , t )
C i 10 (x, y , z , t )

g L ( x, y , z , T )
+ D0 L
g L ( x, y , z , T )
+
x
x
y
y
C i 10 (x, y, z, t )

+ D0 L
g L ( x, y , z , T )
, i 1;
z
z
C 01 (x, y , z , t )
2 C 01 ( x, y, z , t )
2 C 01 ( x, y , z , t )
2 C 01 ( x, y , z , t )
= D0 L
+ D0 L
+ D0 L
+
2
2
t
x
y
z2
+ D0 L
C 00 ( x, y, z , t ) C 00 ( x, y, z , t )
C 00 ( x, y, z , t ) C 00 ( x, y, z , t )

+ D0 L
+
x P ( x, y , z , T )
x
y P ( x, y , z , T )
y
C 00 ( x, y , z, t ) C 00 ( x, y, z , t )
+ D0 L
;
z P ( x, y , z , T )
z
C 02 ( x, y, z , t )
2 C 02 ( x, y, z , t )
2 C 02 (x, y, z, t )
2 C 02 ( x, y, z, t )
= D0 L
+
D
+
D
+ D0 L
0
L
0
L
t
x2
y2
z2

C 1 (x, y, z, t ) C00 (x, y, z, t )
C00 1 (x, y, z, t ) C00 (x, y, z, t )
(
)
C01 (x, y, z, t ) 00
+
C
x
,
y
,
z
,
t
01
+
P (x, y, z, T )
x
P (x, y, z, T )
y
x
y
16
C 00 1 (x, y, z , t ) C 00 (x, y, z , t )

C 00 ( x, y, z, t ) C 01 ( x, y, z, t )
C 01 (x, y, z , t )
+ D0 L

+
z
P ( x, y , z , T )
z
x
x P ( x, y, z, T )

C00 (x, y, z , t ) C 01 (x, y, z , t ) C00 (x, y, z, t ) C01 (x, y, z , t )
+

;
y P ( x, y , z , T )
y
z
z P ( x, y , z , T )
C11 (x, y, z, t )
2 C11 (x, y, z , t )
2 C11 ( x, y, z, t )
2 C11 ( x, y, z, t )
= D0 L
+ D0 L
+ D0 L
+ D0 L
2
2
t
x
y
z2

C 1 ( x, y, z, t ) C00 (x, y, z, t )
C00 1 ( x, y, z, t ) C00 ( x, y, z, t )
C10 (x, y, z, t ) 00
+
C10 (x, y, z, t )
+
P ( x, y, z, T )
x
P ( x, y, z, T )
y
x
y
C 00 ( x, y, z, t ) C10 (x, y, z, t )
C 00 1 ( x, y, z, t ) C 00 ( x, y, z, t )

+
C10 (x, y, z, t )
+ D0 L
+
z
P ( x, y, z, T )
z
x
x P (x, y, z, t )

C 00 (x, y, z, t ) C10 (x, y, z, t ) C00 (x, y, z, t ) C10 (x, y, z, t )

+

+ g L (x, y, z, T )
y P (x, y, z, t )
y
z
z P (x, y, z, t )
x
C 01 ( x, y , z , t )
C 01 (x, y , z , t )
C 01 ( x, y, z , t )
+
g L ( x, y , z , T )
+
g L ( x, y , z , T )
D0 L .
x
y
z
y
z

Solutions of equations for functions Cij(x,y,z,t) (i0, j0) with account appropriate conditions
takes the form
1
2
C 00 ( x, y, z , t ) =
+
FnC c ( x )c ( y )c ( z )enC (t ) ,
Lx L y Lz Lx L y Lz n=1
Ly
Lx
Lz
1 1 1
where enC (t ) = exp 2 n 2 D0C t 2 + 2 + 2 , Fn C = c n (x ) c n ( y ) c n ( z ) f C (x, y , z ) d z d y d x ;
L L L
0
0
0
y
z
x
Ly
Lx
Lz
t
2
C i 0 ( x, y , z , t ) = 2
FnC c n (x ) c n ( y ) c n (z ) enC (t ) e nC ( ) s n (u ) c n (v ) c n (w) g L (u, v, w, T )
0
0
0
0
L x L y L z n =1
Ly
Lx
t
Ci10 (u , v, w, )
2
(
)
(
)
(
)
(
)
(
)
(
)
d wd vd u d n
n
F
c
x
c
y
c
z
e
t
e
c
u
s n (v )
nC n
n
n
nC
nC
n
0
0
0
u
Lx L2y Lz n=1
Lz
cn (w) g L (u , v, w, T )
0
t
Ci10 (u , v, w, )
2
d wd v d u d
cn (x )cn ( y ) cn ( z )enC (t ) enC ( )
2
n
=
1
0
v
Lx Ly Lz
Lx
Ly
Lz
n FnC c n (u ) c n (v ) s n (w) g L (u , v, w, T )
C 01 ( x, y, z, t ) =
cn (w)
C i 10 (u, v, w, )
d w d v d u d , i 1;
w
Ly
Lx
Lz
t
C 00 (u , v, w, )
2
(
)
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e
s
u
c
v
nC
n
n

nC n
n
n
nC
0
0
0
0 P (u , v, w, T )
L2x L y L z n =1
Lx
t
C00 (u , v, w, )
2
d wd v d u d
n FnC cn ( x )cn ( y )cn (z )enC (t ) enC ( ) cn (u )
2
0
0
u
Lx Ly Lz n=1
Ly
Lz
sn (v ) cn (w)
C00 (u , v, w, ) C00 (u , v, w, )
2
d wd v d u d
n FnC cn ( x )cn ( y )cn (z )
P (u , v, w, T )
v
Lx Ly L2z n=1
Lx
Ly
Lz
e nC (t ) e nC ( ) c n (u ) c n (v ) s n (w )
C 00 (u , v, w, ) C 00 (u , v, w, )
d wd vd u d ;
P (u , v, w, T )
w
17
C 02 ( x, y, z, t ) =
Ly
Lx
Lz
t
C00 1 (u, v, w, )
2
(
)
(
)
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e
s
u
c
v
c
w
nC
n
n n
nC n
n
n
nC
0
0
0
0
L2x L y Lz n =1
P (u, v, w, T )
Ly
Lx
t
C00 (u , v, w, )
2
d wd v d u d
n
F
c
(
x
)
c
(
y
)
c
(
z
)
e
(
t
)
e
(
)
c
(
u
)
sn (v )
nC n
n
n
nC
nC
n
0
0
0
Lx L2y Lz n=1
u
Lz
cn (w )
0
C 00 1 (u , v, w, ) C 00 (u , v, w, )
2
d wd vd u d
n FnC cn (x )cn ( y )cn ( z ) enC (t )
P (u , v, w, T )
v
Lx L y L2z n=1
Lx
Ly
Lz
enC ( ) cn (u ) cn (v ) sn (w)
C00 1 (u , v, w, ) C00 (u , v, w, )
2
d wd v d u d 2
n cn (x )
P (u , v, w, T )
w
Lx Ly Lz n=1
C 00 (u , v, w, ) C01 (u , v, w, )
d wd v d u d
0
0
0
0
P (u , v, w, T )
u
Ly
Lx
Lz
t
2
C00 (u , v, w, ) C01 (u , v, w, )
(
)
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e
c
u
s
v
nC
n
n
n
nC
nC
n
n
0
0
0
0 P (u , v, w, T )
Lx L2y Lz n=1
v
Ly
Lx
Lz
FnC cn ( y )cn (z )enC (t ) enC ( ) s n (u ) cn (v ) cn (w)
Ly
Lx
Lz
t
2
n FnC cn ( x )cn ( y )cn ( z )enC (t ) enC ( ) cn (u ) cn (v ) sn (w)
2
0
0
0
0
Lx Ly Lz n=1
cn (w) d w d v d u d
C11 (x, y, z , t ) =
C 00 (u , v, w, ) C 01 (u , v, w, )
d wd vd u d ;
P (u , v, w, T )
w
Ly
Lx
Lz
t
2
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e
s
u
c n (v ) c n (w) g L (u, v, w, T )
nC n
n
n
nC
nC
n
2
0
0
0
0
L x L y L z n =1
Ly
Lx
Lz
t
C 01 (u, v, w, )
2
(
)
(
)
(
)
(
)
(
)
(
)
(
)
d wd vd u d
c
x
c
y
c
z
e
t
e
c
u
s
v
c n (w)
n
n
n
nC
nC
n
n
0
0
0
0
u
L x L2y L z n =1
n FnC g L (u , v, w, T )
t
C01 (u , v, w, )
2
d wd v d u d
cn (x )cn ( y )cn ( z ) enC (t ) enC ( )
2
0
v
Lx Ly Lz n=1
Lx
Ly
Lz
n FnC cn (u ) cn (v ) sn (w ) g L (u , v, w, T )
Lx
C 01 (u , v, w, )
2
d wd v d u d 2
n FnC cn ( x )
w
Lx L y Lz n=1
Ly
Lz
cn ( y )cn (z )enC (t ) enC ( ) sn (u ) cn (v ) cn (w)

0
Lz
C (u , v, w, ) C10 (u , v, w, )
2
d wd v d u d
n cn ( x ) enC ( ) cn (u ) sn (v ) cn (w) 00
2
0
0
0
0
Lx Ly Lz n=1
P (u , v, w, T )
v
Ly
Lx
FnC cn ( y )cn (z )enC (t )
Ly
Lx
Lz
t
2
n FnC cn ( x )cn ( y )cn (z ) enC (t ) enC ( ) cn (u ) cn (v ) sn (w )
2
0
0
0
0
Lx L y Lz n=1
t
C00 (u , v, w, ) C10 (u , v, w, )
2
d wd v d u d 2
n FnC cn (x ) cn ( y )cn ( z )enC (t ) enC ( )
0
w
P (u , v, w, T )
Lx L y Lz n=1
Lx
Ly
Lz
s n (u ) c n (v ) c n (w )
C 00 1 (u , v, w, ) C 00 (u , v, w, )
2
d wd vd u d
n FnC c n ( x )
P (u , v, w, T )
u
L x L2y L z n =1
Ly
Lx
Lz
c n ( y ) c n (z )e nC (t ) e nC ( ) c n (u ) s n (v ) c n (w)
0
C 00 1 (u , v, w, ) C 00 (u , v, w, )
d wd vd u d
P (u , v, w, T )
v
C 00 1 (u , v, w, ) C 00 (u , v, w, )
2
(
)
(
)
(
)
(
)
n
e
c
u
c
v
s
w
d wd vd u d
nC
n
n
n
0
0
0
L x L y L2z n =1 0
P (u , v, w, T )
w
t
C00 (u , v, w, ) C10 (u , v, w, )
d wd v d u d
u
P (u , v, w, T )
Lx
Ly
Lz
FnC c n (x ) c n ( y ) c n (z ) e nC (t ) .
18
REFERENCES
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
I.P. Stepanenko. Basis of Microelectronics, Soviet Radio, Moscow, 1980.

A.G. Alexenko, I.I. Shagurin. Microcircuitry Radio and Communication, Moscow, 1990.
V.G. Gusev, Yu.M. Gusev. Electronics, Moscow: Vysshaya shkola, 1991, in Russian.
V.I. Lachin, N.S. Savelov. Electronics,Phoenix, Rostov-na-Donu, 2001.
Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo. High-performance InGaP/GaAs
pnp delta-doped heterojunction bipolar transistor, Semiconductors. Vol. 43 (7). P. 971-974 (2009).
T. Y. Peng, S. Y. Chen, L. C. Hsieh, C. K. Lo, Y. W. Huang, W. C. Chien, Y. D. Yao. Impedance
behavior of spin-valve transistor, J. Appl. Phys. Vol. 99 (8). P. 08H710-08H712 (2006).
S. Maximenko, S. Soloviev, D. Cherednichenko, T. Sudarshan. Observation of dislocations in
diffused 4HSiC p-i-n diodes by electron-beam induced current, J. Appl. Phys. Vol. 97 (1). P.
013533-013538 (2005).
I.E. Tyschenko, V.A. Volodin. Quantum confinement effect in silicon-on-insulator films implanted
with high dose hydrogen ions, Semiconductors. Vol.46 (10). P.1309-1313 (2012).
K.K. Ong, K.L. Pey, P.S. Lee, A.T.S. Wee, X.C. Wang, Y.F. Chong. Dopant distribution in the
recrystallization transient at the maximum melt depth induced by laser annealing, Appl. Phys. Lett.
Vol. 89 (17). P. 172111 (2006).
Yu.V. Bykov, A.G. Yeremeev, N.A. Zharova, I.V. Plotnikov, K.I. Rybakov, M.N. Drozdov, Yu.N.
Drozdov, V.D. Skupov. Diffusion processes in semiconductor structures during microwave annealing,
Radiophysics and Quantum Electronics. Vol. 43 (3). P. 836-843 (2003).
V.V. Kozlivsky. Modification of semiconductors by proton beams, Sant-Peterburg, Nauka, 2003,
in Russian.
E.L. Pankratov. Application of porous layers and optimization of annealing of dopant and radiation
defects to increase sharpness of p-n-junctions in a bipolar heterotransistors, J. Optoel. Nanoel. Vol. 6
(2). P. 188 (2011).
E.L. Pankratov. Increasing of homogeneity of dopant distribution in a p-n-junction by using an
overlayers, J. Comp. Theor. Nanoscience. Vol. 8 (2). P. 207 (2011).
E.L. Pankratov, E.A. Bulaeva. Increasing of sharpness of diffusion-junction heterorectifier by using
radiation pro-cessing, Int. J. Nanoscience. Vol. 11 (5). P. 1250028 (2012).
Z.Yu. Gotra. Technology of microelectronic devices (Radio and communication, Moscow, 1991).
E.I. Zorin, P.V. Pavlov and D.I. Tetelbaum. Ion doping of semiconductors, Energy, Moscow, 1975.
P.M. Fahey, P.B. Griffin, J.D. Plummer. Point defects and dopant diffusion in silicon, Rev. Mod.
Phys. 1989. V. 61. 2. P. 289-388.
V.L. Vinetskiy, G.A. Kholodar', Radiative physics of semiconductors. (Naukova Dumka, Kiev, 1979,
in Russian).
E.L. Pankratov. Analysis of redistribution of radiation defects with account diffusion and several
secondary processes, Mod. Phys. Lett. B. 2008. Vol. 22 (28). P. 2779-2791.
K.V. Shalimova. Physics of semiconductors, Moscow: Energoatomizdat, 1985, in Russian.
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Author
Pankratov Evgeny Leonidovich was born at 1977. From 1985 to 1995 he was educated in a secondary
school in Nizhny Novgorod. From 1995 to 2004 he was educated in Nizhny Novgorod State University:
from 1995 to 1999 it was bachelor course in Radiophysics, from 1999 to 2001 it was master course in
Radiophysics with specialization in Statistical Radiophysics, from 2001 to 2004 it was PhD course in
Radiophysics. From 2004 to 2008 E.L. Pankratov was a leading technologist in Institute for Physics of
Microstructures. From 2008 to 2012 E.L. Pankratov was a senior lecture/Associate Professor of Nizhny
Novgorod State University of Architecture and Civil Engineering. Now E.L. Pankratov is in his Full Doctor
course in Radiophysical Department of Nizhny Novgorod State University. He has 96 published papers in
area of his researches.
19
Bulaeva Elena Alexeevna was born at 1991. From 1997 to 2007 she was educated in secondary school of
village Kochunovo of Nizhny Novgorod region. From 2007 to 2009 she was educated in boarding school
Center for gifted children. From 2009 she is a student of Nizhny Novgorod State University of
Architecture and Civil Engineering (spatiality Assessment and management of real estate). At the same
time she is a student of courses Translator in the field of professional communication and Design
(interior art) in the University. E.A. Bulaeva was a contributor of grant of President of Russia (grant
MK-548.2010.2). She has 29 published papers in area of her researches.
20

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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No.

AN APPROACH FOR OPTIMIZATION OF

Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950,

described by the second

with boundary and initial conditions

Here C(x,y,z,t) is the spatio-temporal distribution of concentration of dopant; x, y, z and t are

Here DL (x,y,z,T) is the spatial (due to inhomogeneity () of heterostructure) and

and boundary conditions

Here =I,V; I (x,y,z,t) is the spatio-temporal distribution of concentration of interstitials; D(x,y,

with boundary and initial conditions

(i0, j0, k0), which have been obtained by stan

We determine solutions of these equations as the following power series

~ijk ( , , , ) (i0, j0, k0) could be written as

D0 I 1 2 I 000 ( , , , ) 1 2 I 000 ( , , , ) 1 2 I 000 ( , , , )

D0 I 1 I 110 ( , , , ) 1 2 I 110 ( , , , ) 1 2 I 110 ( , , , )

enV ( ) = exp 2 n 2 D0 I D0V ;

n cn ( )cn ( )cn ( )en ( ) en ( ) s n (u ) cn (v ) g V (u , v, w, T )

cn ( )cn ( )en ( ) en ( ) cn (u ) cn (v ) sn (w)

Equations for the functions i(x,y,z,t) are

= 0 , i0; I0(x,y,z,0)=fI (x,y,z), Ii(x,y,z,0)=0,

V0(x,y,z,0)=fV (x,y,z), Vi(x,y,z,0)=0, i1.

cn() = cos ( n /L);

where sn() = sin ( n/L).

C00 (x, y, z , t ) C 01 (x, y, z , t ) C00 (x, y, z, t ) C01 (x, y, z , t )

C 00 (x, y, z, t ) C10 (x, y, z, t ) C00 (x, y, z, t ) C10 (x, y, z, t )

FnC cn ( y )cn (z )enC (t ) enC ( ) s n (u ) cn (v ) cn (w)

cn ( y )cn (z )enC (t ) enC ( ) sn (u ) cn (v ) cn (w)

FnC cn ( y )cn (z )enC (t )

I.P. Stepanenko. Basis of Microelectronics, Soviet Radio, Moscow, 1980.

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