Documentos de Académico
Documentos de Profesional
Documentos de Cultura
PROFESSIONAL EXPERIENCE
EDUCATION
PATENTS
L. Rivaud, D. Fuller, and M. Giammatteo, Provisional Patent Application BASF 5457, “Photonic Coloration
by Selective Light Scattering Using a Diffraction Grating”, filed October 15, 2008.
L. Rivaud and G.A. Hawkins, “An Etch Resistant Oxide Mask Formed by Low Temperature and Low Energy
Oxygen Implantation”, U.S. Patent #4948624, August 14, 1990.
L. Rivaud, P.L. Roselle, and D.L. Losee, “A Process to Eliminate the Re-entrant Profile in a Double
Polysilicon Gate Structure”, U.S. Patent #4,888,298, December 19, 1989.
RECORD OF INVENTION
L. Rivaud, “Enhanced Chroma Interference Pigments Using Exfoliated Graphite Nanoparticles”, filed for
BASF June 1, 2009.
PUBLICATIONS
Rivaud, L. and Tagueña, J. “Nature Dressed in Blue”, Como ves?, #82, pp. 16-17, September 2005.
Rivaud, L. “Lightning and the Electron Microscope”, Microscopy Today issue #97-7, September 1997, p.8
Rivaud, L. et al. “Structural and Physical Properties of Polycrystalline Hexagonal Ta2N Films Deposited by
Reactive Sputtering”, J. Vac. Sci. Technology A (1991) pp.2180-2182.
Rivaud et al. “A Transmission Electron Microscopy (TEM) Study of Oxygen Precipitation induced by
internal gettering in Low and High Oxygen Wafers”, J. Electrochem. Soc. 135, (1988), pp. 437-442.
Rivaud, L. and Lavine, J.P, “The Dynamics of Octohedral Precipitate Formation in Czochralski Silicon: a
Transmission Electron Microscopy Study”, Microscopy of Semiconducting Materials (1987), pp. 469-
478.
Rivaud, L. “A Sample Preparation Technique for XTEM of Evaporated Films with Poor Adhesion”, J.
Electron Micros. Technique 5 (1987), pp. 113-114.
Lavine, J.P., Hawkins, G.A, Anagnostopoulos, C.N., and L. Rivaud, “Oxygen Precipitation in Silicon:
Numerical Models”, Mat. Res. Soc. Symp. Proc., Vol. 59 (1986), pp. 301-307.
Rhodes, H.E., Apai, G., and Rivaud, L., “UHV interface studies of palladium silicide formation on
hydrogenated amorphous silicon films”, Mat. Res. Soc. Proc., Vol. 70 (1986), pp. 387-392.
Rivaud, L., “A procedure to prepare cross-sectional samples for TEM”, J. Electron Micros. Technique 2
(1985), pp. 577-580.
Rivaud, L. and Hawkins, G., “Pulsed jet etch chamber for preparing silicon samples for transmission
electron microscopy”, Rev. Sci. Instrum. 56 (1985), pp. 563-566.
Uppal, P.N., Burton, L.C., Rivaud, L., and Greene, J.E., “Compositional depth profiles of chemiplated Cu2S/
(Zn,Cd)S heterojuncion solar cells”, J. Appl. Phys. 54 (1983), pp. 83-92.
Rivaud, L. et al., “Low energy ion bombardment enhanced diffusion, segregation, and phase transformation
in Cu-In alloys”, Rad. Effects 61 (1982), pp. 83-92.
Rivaud, L. et al., “Enhanced diffusion and precipitation in Cu:In alloys due to low energy ion
bombardment”, Surf. Sci. 102 (1982), pp. 610-617
REFERENCES
Charles Willard
(914) 737-2554
charles.willard@basf.com
Razvan Valter
(914) 737-2554
razvan.valter@basf.com