STY60NM60

N-CHANNEL 600V - 0.050 - 60A Max247

Zener-Protected MDmeshPower MOSFET
TARGET DATA
TYPE
STY60NM60

VDSS

RDS(on)

ID

600V

< 0.06

60 A

TYPICAL RDS(on) = 0.050

HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL
INDUSTRYS LOWEST ON-RESISTANCE

DESCRIPTION
The MDmesh is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Companys PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Companys proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competitions products.

Max247

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

Symbol

Value

Unit

Drain-source Voltage (VGS = 0)

600

Drain-gate Voltage (RGS = 20 k)

600

Gate- source Voltage

30

ID

Drain Current (continuos) at TC = 25C

60

ID

Drain Current (continuos) at TC = 100C

37.8

Drain Current (pulsed)

240

Total Dissipation at TC = 25C

450

KV

3.6

W/C

VDS
VDGR
VGS

IDM ()
PTOT
VESD(G-S)

Parameter

Gate source ESD(HBM-C=100pF, R=15K)

Derating Factor

dv/dt

Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

V/ns

65 to 150

150

()Pulse width limited by safe operating area

September 2001

1/6

STY60NM60
THERMAL DATA
Rthj-case

Thermal Resistance Junction-case

Max

0.277

C/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

30

C/W

300

Tl

Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS
Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 C, ID = IAR, VDD = 35 V)

Max Value

Unit

30

1350

mJ

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol

Parameter

Test Conditions

Drain-source
Breakdown Voltage

ID = 250 A, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

IGSS

Gate-body Leakage
Current (VDS = 0)

V(BR)DSS

Min.

Typ.

Max.

600

Unit
V

10

VDS = Max Rating, TC = 125 C

100

VGS = 30V

100

nA

ON (1)
Symbol

Parameter

Test Conditions

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250A

RDS(on)

Static Drain-source On
Resistance

VGS = 10V, ID = 30A

Min.

Typ.

Max.

Unit

0.050

0.06

Typ.

Max.

Unit

DYNAMIC
Symbol
gfs (1)

Parameter
Forward Transconductance

Test Conditions
VDS = ID(on) x RDS(on)max,
ID = 30A
VDS = 25V, f = 1 MHz, VGS = 0

20

Ciss

Input Capacitance

4430

pF

Coss

Output Capacitance

733

pF

Crss

Reverse Transfer
Capacitance

54

pF

RG

Gate Input Resistance

1.5

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV
Open Drain

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

2/6

Min.

STY60NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr

Parameter
Turn-on Delay Time
Rise Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Test Conditions

Min.

VDD = 250V, ID = 30A

RG = 4.7 VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 60A,
VGS = 10V

Typ.

Max.

Unit

TBD

ns

TBD

ns

104

145

nC

TBD

nC

TBD

nC

SWITCHING OFF
Symbol
tr(Voff)

Parameter
Off-voltage Rise Time

tf

Fall Time

tc

Cross-over Time

Test Conditions

Min.

VDD = 400V, ID = 60A,

RG = 4.7, VGS = 10V
(see test circuit, Figure 5)

Typ.

Max.

Unit

TBD

ns

TBD

ns

TBD

ns

SOURCE DRAIN DIODE

Symbol
ISD

Parameter

Test Conditions

Min.

Typ.

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 60A, VGS = 0

ISD = 60A, di/dt = 100A/s,
VDD = 60V, Tj = 150C
(see test circuit, Figure 5)

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM

Reverse Recovery Current

Max.

Unit

60

240

1.5

TBD

ns

TBD

TBD

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3/6

STY60NM60
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

4/6

STY60NM60

Max247 MECHANICAL DATA

mm

DIM.
MIN.
A

4.70

TYP.

inch
MAX.

MIN.

TYP.

MAX.

5.30

A1

2.20

2.60

1.00

1.40

b1

2.00

2.40

b2

3.00

3.40

0.40

0.80

19.70

20.30

5.35

5.55

15.30

15.90

14.20

15.20

L1

3.70

4.30

P025Q

5/6

STY60NM60

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2000 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com

6/6

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.