2N4403

2N4403 / MMBT4403
PNP General-Purpose Amplifier

Description
This device is designed for use as a general-purpose
amplifier and switch for collector currents to 500 mA.
E
TO-92
SOT-23
EBC
Mark:2T
Figure 1. 2N4403 Device Package
Figure 2. MMBT4403 Device Package
Ordering Information
Part Number
Marking
Package
Packing Method
2N4403BU
2N4403
TO-92 3L
Bulk
2N4403TF
2N4403
TO-92 3L
Tape and Reel
2N4403TFR
2N4403
TO-92 3L
Tape and Reel
2N4403TA
2N4403
TO-92 3L
Ammo
2N4403TAR
2N4403
TO-92 3L
Ammo
MMBT4403
2T
SOT-23 3L
Tape and Reel
2001 Fairchild Semiconductor Corporation

2N4403 / MMBT4403 Rev. 1.1.1
www.fairchildsemi.com
2N4403 / MMBT4403 PNP General-Purpose Amplifier
July 2014
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted.
Symbol
Value
Unit
VCEO
Collector-Emitter Voltage
-40
VCBO
Collector-Base Voltage
-40
VEBO
Emitter-Base Voltage
-5.0
-600
mA
-55 to +150
IC
TJ, TSTG
Parameter
Collector Current - Continuous

Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25C unless otherwise noted.
Symbol
Max.
Parameter
Unit
2N4403(3)
MMBT4403(4)
Total Device Dissipation
625
350
mW
Derate Above 25C
5.0
2.8
mW/C
RJC
Thermal Resistance, Junction to Case
83.3
RJA
Thermal Resistance, Junction to Ambient
200
PD
C/W
357
C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.

2N4403 / MMBT4403 Rev. 1.1.1
2
Absolute Maximum Ratings(1),(2)
Values are at TA = 25C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown
Voltage(5)
IC = -1.0 mA, IB = 0
-40
V(BR)CBO
Collector-Base Breakdown
Voltage
IC = -0.1 mA, IE = 0
-40
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = -0.1 mA, IC = 0
-5.0
Base Cut-Off Current
VCE = -35 V, VEB = -0.4 V
-0.1
Collector Cut-Off Current
VCE = -35 V, VEB = -0.4 V
-0.1
IBL
ICEX
On Characteristics
IC = -0.1 mA, VCE = -1.0 V
hFE
DC Current Gain
IC = -1.0 mA, VCE = -1.0 V
60
IC = -10 mA, VCE = -1.0 V
100
IC = -150 mA, VCE = -2.0 V(5)
100
V(5)
20
IC = -500 mA, VCE = -2.0

VCE(sat)
Collector-Emitter Saturation
Voltage(5)
VBE(sat)
Base-Emitter Saturation Voltage
30
300
IC = -150 mA, IB = -15 mA
-0.40
IC = -500 mA, IB = -50 mA
-0.75
IC = -150 mA, IB = -15 mA(5)
-0.75
IC = -500 mA, IB = -50 mA
-0.95
-1.30
V
V
Small Signal Characteristics

Current Gain - Bandwidth Product
IC = -20 mA, VCE = -10 V,

f = 100 MHz
Ccb
Collector-Base Capacitance
VCB = -10 V, IE = 0,
f = 140 kHz
8.5
pF
Ceb
Emitter-Base Capacitance
VBE = -0.5 V, IC = 0,
f = 140 kHz
30
pF
hie
Input Impedance
IC = -1.0 mA, VCE = -10 V,

f = 1.0 kHz
1.5
15.0
hre
Voltage Feedback Ratio
IC = -1.0 mA, VCE = -10 V,

f = 1.0 kHz
0.1
8.0
x10-4
hfe
Small-Signal Current Gain
IC = -1.0 mA, VCE = -10 V,

f = 1.0 kHz
60
500
hoe
Output Admittance
IC = -1.0 mA, VCE = -10 V,

f = 1.0 kHz
100
mhos
VCC = -30 V, IC = -150 mA,

IB1 = -15 mA
15
ns
20
ns
VCC = -30 V, IC = -150 mA,

IB1 = IB2 = -15 mA
225
ns
30
ns
fT
200
MHz
Switching Characteristics
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
Note:
5. Pulse test: pulse width 300 s, duty cycle 2.0%.

2N4403 / MMBT4403 Rev. 1.1.1
3
Electrical Characteristics
VCESAT - COLLECTOR EMITTE R VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
0.5
500
VCE = 5V
400
125 C
0.3
300
25 C
200
100
0.3
0.1
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
V BE( ON)- BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)
1
- 40 C
- 40 C
25 C
0.6
10
100
I C - COLLECTOR CURRE NT (mA)
0.6
125 C
0.4
= 10
- 40 C
25 C
125C
VCE = 5V
0.2
0.2
1
10
100
500
0
0.1
1
10
I C - COLLECTOR CURRE NT (mA)
25
Figure 6. Base-Emitter On Voltage vs.

Collector Current
Figure 5. Base-Emitter Saturation Voltage

vs. Collector Current
100
20
CAPACITANCE (pF)
V CB = 35V
10
0.1
0.01
25
500
0.8
0.8
I CBO - COLLE CTOR CURRENT (nA)
125 C
Figure 4. Collector-Emitter Saturation Voltage vs.

Collector Current
Figure 3. Typical Pulsed Current Gain vs.

Collector Current
0.4
25 C
0.2
- 40 C
0
0.1
= 10
0.4
50
75
100
T A - AMBIE NT TEMP ERATURE ( C)
12
C ib
8
4
0
0.1
125
C ob
1
10
REVERSE BIAS VOLTAGE (V)
50
Figure 8. Input and Output Capacitance vs.

Reverse Bias Voltage
Figure 7. Collector Cut-Off Current vs.

Ambient Temperature

2N4403 / MMBT4403 Rev. 1.1.1
16
4
Typical Performance Characteristics
250
I B1 = I B2 =
I B1 = I B2 =
10
400
V cc = 15 V
ts
150
TIME (nS)
TIME (nS)
200
500
Ic
100
tr
tf
V cc = 15 V
300
200
t off
50
100
t on
td
0
10
100
0
10
1000
1000
1
PD - POWER DISSIPATION (W)
I B1 - TURN 0N BASE CURRENT (mA)
50
20
SOT-223
0.75
10
t r = 15 V
5
30 ns
TO-92
0.5
SOT-23
0.25
60 ns
1
10
100
500
CHAR. RELATIVE TO VALUES AT VCE = -10V
5
hoe
2
h re
h fe
1
0.5
h ie
0.2
V CE = -10 V
T A = 25 oC
1
_
_
_
2
5
10
20
50
50
75
100
TEMPERATURE ( oC)
125
150
1.3
1.2
h re and hoe
h re
h ie
h fe
hoe
1.1
1
h ie
0.9
h fe
0.8
-4
I C = -10mA
T A = 25oC
-8
-12
-16
V CE - COLLECTOR VOLTAGE (V)
-20
Figure 14. Common Emitter Characteristics

2N4403 / MMBT4403 Rev. 1.1.1
25
Figure 12. Power Dissipation vs.

Ambient Temperature
Figure 11. Rise Time vs.

Collector and Turn-On Base Currents
CHAR. RELATIVE TO VALUES AT I C= -10mA
100
Figure 10. Turn-On and Turn-Off Times vs.

Collector Current
Figure 9. Switching Times vs. Collector Current
0.1_
Ic
10
5
Typical Performance Characteristics (Continued)
CHAR. RELATIVE TO VALUES AT TA = 25oC
Typical Performance Characteristics (Continued)
1.5
I C = -10mA
1.4 V = -10 V
CE
1.3
1.2
h fe
h ie
h re
hoe
1.1 hoe
1
0.9
0.8
0.7
h re
h ie
0.6
0.5
-40
h fe
-20
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
100

2N4403 / MMBT4403 Rev. 1.1.1
6
Physical Dimensions
TO-92 3L (Tape and Reel, Ammo)
Figure 16. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.
For current tape and reel specifications, visit Fairchild Semiconductors online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf.

2N4403 / MMBT4403 Rev. 1.1.1
7
Physical Dimensions (Continued)
TO-92 3L (Bulk)
Figure 17. 3-LEAD, JEDEC TO-92 COMPLIANT STRAGHIT LEAD CONFIGURATION (OLD TO92AM3)
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.

2N4403 / MMBT4403 Rev. 1.1.1
8
Physical Dimensions (Continued)
SOT-23 3L
0.95
2.920.20
3
1.40
1.30+0.20
-0.15
1
(0.29)
0.95
1.90
2.20
0.60
0.37
0.20
A B
1.90
1.00
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
2.400.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)

http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.

2N4403 / MMBT4403 Rev. 1.1.1
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
AX-CAP*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED
Dual Cool
EcoSPARK
EfficientMax
ESBC
F-PFS
FRFET
SM
Global Power Resource
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
mWSaver
OptoHiT
OPTOLOGIC
OPTOPLANAR
Fairchild
Fairchild Semiconductor
FACT Quiet Series
FACT
FAST
FastvCore
FETBench
FPS
PowerTrench
PowerXS
Programmable Active Droop
QFET
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time

SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS
SyncFET
Sync-Lock
TinyBoost
TinyBuck
TinyCalc
TinyLogic
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT*
PSerDes
UHC
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain
system whose failure to perform can be reasonably expected to
life, and (c) whose failure to perform when properly used in
cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be
safety or effectiveness.
reasonably expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I68
Fairchild Semiconductor Corporation

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2N4403 / MMBT4403

PNP General-Purpose Amplifier

Figure 1. 2N4403 Device Package

Figure 2. MMBT4403 Device Package

Tape and Reel

Tape and Reel

Tape and Reel

2001 Fairchild Semiconductor Corporation

2N4403 / MMBT4403 PNP General-Purpose Amplifier

Collector Current - Continuous

Total Device Dissipation

Derate Above 25C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2001 Fairchild Semiconductor Corporation

2N4403 / MMBT4403 PNP General-Purpose Amplifier

Absolute Maximum Ratings(1),(2)

Values are at TA = 25C unless otherwise noted.

Emitter-Base Breakdown Voltage

Base Cut-Off Current

VCE = -35 V, VEB = -0.4 V

Collector Cut-Off Current

VCE = -35 V, VEB = -0.4 V

IC = -1.0 mA, VCE = -1.0 V

IC = -10 mA, VCE = -1.0 V

IC = -150 mA, VCE = -2.0 V(5)

IC = -500 mA, VCE = -2.0

Base-Emitter Saturation Voltage

IC = -150 mA, IB = -15 mA

IC = -500 mA, IB = -50 mA

IC = -150 mA, IB = -15 mA(5)

IC = -500 mA, IB = -50 mA

Small Signal Characteristics

IC = -20 mA, VCE = -10 V,

IC = -1.0 mA, VCE = -10 V,

Voltage Feedback Ratio

IC = -1.0 mA, VCE = -10 V,

Small-Signal Current Gain

IC = -1.0 mA, VCE = -10 V,

IC = -1.0 mA, VCE = -10 V,

VCC = -30 V, IC = -150 mA,

VCC = -30 V, IC = -150 mA,

2001 Fairchild Semiconductor Corporation

2N4403 / MMBT4403 PNP General-Purpose Amplifier

VCESAT - COLLECTOR EMITTE R VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

V BE( ON)- BAS E EMITTER ON VOLTAGE (V)

V BESAT - BASE EMITTER VOLTAGE (V)

Figure 6. Base-Emitter On Voltage vs.

Figure 5. Base-Emitter Saturation Voltage

I CBO - COLLE CTOR CURRENT (nA)

Figure 4. Collector-Emitter Saturation Voltage vs.

Figure 3. Typical Pulsed Current Gain vs.

Figure 8. Input and Output Capacitance vs.

Figure 7. Collector Cut-Off Current vs.

2001 Fairchild Semiconductor Corporation

2N4403 / MMBT4403 PNP General-Purpose Amplifier

Typical Performance Characteristics

I B1 - TURN 0N BASE CURRENT (mA)

CHAR. RELATIVE TO VALUES AT VCE = -10V

Figure 14. Common Emitter Characteristics

Figure 13. Common Emitter Characteristics

2001 Fairchild Semiconductor Corporation

Figure 12. Power Dissipation vs.