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SSF6010

Feathers:

ID =60A

Advanced trench process technology

BV=60V

avalanche energy, 100% test

Rdson=10mohm

Fully characterized avalanche voltage and current

Description:
The SSF6010 is a new generation of middle voltage and high
current NChannel enhancement mode trench power
MOSFET. This new technology increases the device reliability

SSF6010 TOP View (TO220)

and electrical parameter repeatability. SSF6010 is assembled


in high reliability and qualified assembly house.
Application:
Power switching application

Absolute Maximum Ratings


Parameter

Max.

Units

ID@Tc=25 C

Continuous drain current,VGS@10V

60

ID@Tc=100C

Continuous drain current,VGS@10V

45

IDM

Pulsed drain current

240

PD@TC=25C

Power dissipation

100

Linear derating factor

0.74

W/ C

VGS

Gate-to-Source voltage

20

EAS

Single pulse avalanche energy

220

mJ

EAR

Repetitive avalanche energy

TBD

TJ

Operating Junction and

TSTG

Storage Temperature Range

55 to +150

Thermal Resistance
Parameter

Min.

Typ.

Max.

RJC

Junction-to-case

1.25

RJA

Junction-to-ambient

62

Units
C/W

Electrical Characteristics @TJ=25 C(unless otherwise specified)


Parameter

Min.

Typ.

Drain-to-Source breakdown voltage

60

VGS=0V,ID=250A

RDS(on) Static Drain-to-Source on-resistance

10

VGS=10V,ID=30A

VGS(th)

Gate threshold voltage

2.0

4.0

VDS=VGS,ID=250A

gfs

Forward transconductance

58

VDS=5V,ID=30A

10

Gate-to-Source forward leakage

100

Gate-to-Source reverse leakage

-100

BVDSS

IDSS

IGSS

Drain-to-Source leakage current

Silikron Semiconductor CO.,LTD.

2009.12.15

Max. Units

Test Conditions

VDS=60V,VGS=0V
A

VDS=60V,
VGS=0V,TJ=150C

nA

VGS=20V
VGS=-20V

Version : 1.0

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SSF6010

45

ID=30A

Qg

Total gate charge

Qgs

Gate-to-Source charge

4.2

Qgd

Gate-to-Drain("Miller") charge

15

td(on)

Turn-on delay time

14.6

Rise time

14.2

Turn-Off delay time

40

Fall time

7.3

VGS=10V

Ciss

Input capacitance

1480

VGS=0V

Coss

Output capacitance

190

Crss

Reverse transfer capacitance

135

tr
td(off)
tf

nC

VDD=30V
VGS=10V
VDD=30V

nS

pF

ID=2A ,RL=15
RG=2.5

VDS=25V
f=1.0MHZ

Source-Drain Ratings and Characteristics


Parameter
IS
ISM

Continuous Source Current


(Body Diode)
Pulsed Source Current
(Body Diode)

VSD Diode Forward Voltage


trr

Reverse Recovery Time

Qrr Reverse Recovery Charge


ton

Forward Turn-on Time

Min.

Typ.

Max.

60

Units

Test Conditions
MOSFET symbol
showing the

integral reverse

240

1.3

TJ=25C,IS=40A,VGS=0V

33

nS

TJ=25C,IF=60A

61

nC

di/dt=100A/s

p-n junction diode.

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:
Repetitive rating; pulse width limited by max junction temperature.
Test condition: L =0.3mH, VDD = 30V,Id=37A

Pulse width300S, duty cycle1.5% ; RG = 25 Starting TJ = 25C


EAS test circuit:

Gate charge test circuit:

BV dss

Silikron Semiconductor CO.,LTD.

2009.12.15

Version : 1.0

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SSF6010
Switch Waveforms:

Switch Time Test Circuit

Transfer Characteristic

Capacitance

On Resistance vs Junction Temperature

Breakdown Voltage vs Junction Temperature

Silikron Semiconductor CO.,LTD.

2009.12.15

Version : 1.0

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SSF6010

Gate Charge

Source-Drain Diode Forward Voltage

Safe Operation Area

Max Drain Current vs Junction Temperature

Transient Thermal Impedance Curve

Silikron Semiconductor CO.,LTD.

2009.12.15

Version : 1.0

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SSF6010
TO220 MECHANICAL DATA:

Silikron Semiconductor CO.,LTD.

2009.12.15

Version : 1.0

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