PSMN069-100YS: 1. Product Profile

PSMN069-100YS
N-channel LFPAK 100 V 72.4 m standard level MOSFET

Rev. 02 25 October 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits

Advanced TrenchMOS provides low
RDSon and low gate charge
Improved mechanical and thermal

characteristics
High efficiency gains in switching

power converters
LFPAK provides maximum power

density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Motor control
Lithium-ion battery protection
Server power supplies
Load switching
1.4 Quick reference data

Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDS
ID
drain-source voltage
Tj 25 C; Tj 175 C
100
drain current
Tmb = 25 C; VGS = 10 V;
see Figure 1
17
Ptot
total power
dissipation
Tmb = 25 C; see Figure 2
56
Tj
junction temperature
-55
175
130
56.6 72.4 m
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 5 A;

resistance
Tj = 100 C; see Figure 12
VGS = 10 V; ID = 5 A;
PSMN069-100YS
NXP Semiconductors
Table 1.
Symbol
Quick reference data continued

Parameter
Conditions
Min
Typ
Max Unit
VGS = 10 V; ID = 15 A;
VDS = 50 V; see Figure 14;
see Figure 15
4.8
nC
14
nC
24
mJ
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 C;
ID = 17 A; Vsup 100 V;
unclamped; RGS = 50
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
source
source
source
gate
mb
mounting base; connected to

drain
Graphic symbol
D
mb
G
mbb076
1 2 3 4
SOT669 (LFPAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
PSMN069-100YS
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
PSMN069-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Version
NXP B.V. 2010. All rights reserved.
2 of 15
PSMN069-100YS
NXP Semiconductors
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj 25 C; Tj 175 C
100
VDGR
drain-gate voltage
Tj 175 C; Tj 25 C; RGS = 20 k
100
VGS
gate-source voltage
ID
drain current
-20
20
VGS = 10 V; Tmb = 100 C; see Figure 1
12
VGS = 10 V; Tmb = 25 C; see Figure 1
17
68
IDM
peak drain current
pulsed; tp 10 s; Tmb = 25 C; see Figure 3
Ptot
total power dissipation
Tmb = 25 C; see Figure 2
56
Tstg
storage temperature
-55
175
Tj
-55
175
Tsld(M)
peak soldering temperature
260
Source-drain diode
IS
source current
Tmb = 25 C
17
ISM
peak source current
pulsed; tp 10 s; Tmb = 25 C
68
VGS = 10 V; Tj(init) = 25 C; ID = 17 A;
Vsup 100 V; unclamped; RGS = 50
24
mJ
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
EDS(AL)S
003a a e 151
20
ID
(A)
03aa16
120
Pder
(%)
15
80
10
40
50
100
150
200
Fig 1.
Continuous drain current as a function of

mounting base temperature
PSMN069-100YS
Product data sheet
50
100
150
200
Tmb (C)
Tmb (C)
Fig 2.
Normalized total power dissipation as a

function of mounting base temperature
3 of 15
PSMN069-100YS
NXP Semiconductors
003aae152
102
Limit RDSon = VDS / ID
ID
(A)
tp =10 s
10
100 s
1
DC
1 ms
10 ms
100 ms
10-1
10-2
1
Fig 3.
102
10
103
V DS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN069-100YS
Product data sheet
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NXP Semiconductors
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to

mounting base
see Figure 4
1.6
2.7
K/W
003a a e 153
10
Zth (j-mb)
(K/W)
1
= 0.5
0.2
0.1
101
0.05
tp
T
0.02
single shot
102
106
Fig 4.
tp
T
105
104
103
102
101
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN069-100YS
Product data sheet
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PSMN069-100YS
NXP Semiconductors
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID = 0.25 mA; VGS = 0 V; Tj = -55 C
90
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 C
100
ID = 1 mA; VDS = VGS; Tj = 175 C;

see Figure 10
1.2
ID = 1 mA; VDS = VGS; Tj = 25 C;

see Figure 10; see Figure 11
2.3
ID = 1 mA; VDS = VGS; Tj = -55 C;

see Figure 10
4.7
50
IDSS
drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 125 C

VDS = 100 V; VGS = 0 V; Tj = 25 C
0.07
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 C
10
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 C
10
100
nA
VGS = 10 V; ID = 5 A; Tj = 100 C;
see Figure 12
130
VGS = 10 V; ID = 5 A; Tj = 175 C;
see Figure 12
149
202.7
VGS = 10 V; ID = 5 A; Tj = 25 C;
see Figure 13
56.6
72.4
f = 1 MHz
0.67
ID = 15 A; VDS = 50 V; VGS = 10 V;
14
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
11
nC
RDSon
RG
drain-source on-state
resistance
internal gate resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
3.9
nC
QGS(th)
pre-threshold gate-source
charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
see Figure 14
2.2
nC
QGS(th-pl)
post-threshold gate-source
charge
1.7
nC
QGD
gate-drain charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
4.8
nC
VGS(pl)
gate-source plateau voltage
VDS = 50 V; see Figure 14;

see Figure 15
4.7
Ciss
input capacitance
Coss
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;

Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
PSMN069-100YS
Product data sheet
VDS = 50 V; RL = 3.3 ; VGS = 10 V;

RG(ext) = 4.7 ; Tj = 25 C
645
pF
63
pF
43
pF
10
ns
ns
19
ns
ns
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PSMN069-100YS
NXP Semiconductors
Table 6.
Characteristics continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
0.8
1.2
Source-drain diode
VSD
source-drain voltage
IS = 5 A; VGS = 0 V; Tj = 25 C;
see Figure 17
trr
reverse recovery time
Qr
recovered charge
IS = 10 A; dIS/dt = 100 A/s;

VGS = 0 V; VDS = 50 V
003a a e 156
30
45
ns
74
nC
003a a e 155
10
ID
(A)
gfs
(S)
20
6
4
10
2
Tj = 25 C
0
0
Fig 5.
Tj = 175 C
10
20
30
ID (A)
Forward transconductance as a function of

drain current; typical values
003a a e 158
1500
40
C
(pF)
Fig 6.
VGS (V)
Transfer characteristics: drain current as a

function of gate-source voltage; typical values
003a a e 159
250
RDSon
(m)
200
Ciss
1000
150
Crss
100
500
50
0
0
Fig 7.
10
VGS (V)
Input and reverse transfer capacitances as a

function of gate-source voltage; typical values
PSMN069-100YS
Product data sheet
15
Fig 8.
10
VGS (V)
15
Drain-source on-state resistance as a function

of gate-source voltage; typical values
7 of 15
PSMN069-100YS
NXP Semiconductors
003a a e 154
30
10 8 6.5
ID
(A)
003aae938
VGS(th)
(V)
5.5
max
20
3
typ
10
4.7
1
VGS (V) = 4.5
0
-60
0
0
Fig 9.
min
4.8
VDS (V)
Output characteristics: drain current as a

function of drain-source voltage; typical values
ID
(A)
min
102
typ
60
120
Tj (C)
180
Fig 10. Gate-source threshold voltage as a function of

003aae487
101
003aad774
3.2
a
max
2.4
103
1.6
104
0.8
105
106
0
0
-60
VGS (V)
Fig 11. Sub-threshold drain current as a function of

gate-source voltage
PSMN069-100YS
Product data sheet
60
120
Tj (C)
180
Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature
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NXP Semiconductors
003a a e 157
200
VGS (V) = 4.5
RDSon
(m)
4.7 4.8
VDS
ID
150
VGS(pl)
VGS(th)
100
5.5
6
8
10
50
VGS
QGS1
QGS2
QGS
QGD
QG(tot)
003aaa508
0
0
10
15
ID (A)
20
Fig 13. Drain-source on-state resistance as a function

of drain current; typical values
003a a e 160
10
VGS
(V)
Fig 14. Gate charge waveform definitions
003a a e 161
104
C
(pF)
VDS = 20 V
8
50 V
Ciss
103
6
80 V
Coss
102
Crss
0
0
10
15
QG (nC)
20
Fig 15. Gate-source voltage as a function of gate

charge; typical values
PSMN069-100YS
Product data sheet
10
101
10
VDS (V)
102
Fig 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values
9 of 15
PSMN069-100YS
NXP Semiconductors
003a a e 162
80
IS
(A)
60
40
20
Tj = 175 C
Tj = 25 C
0
0
0.5
VSD (V)
1.5
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN069-100YS
Product data sheet
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NXP Semiconductors
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
A2
SOT669
c2
b2
E1
b3
L1
mounting
base
b4
D1
L2
4
w M A
b
1/2
(A 3)
A1
detail X
y C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)

UNIT
A1
A2
A3
b2
1.20 0.15 1.10

0.50 4.41
0.25
1.01 0.00 0.95
0.35 3.62
mm
b3
b4
2.2
2.0
0.9
0.7
D (1)
c2
D1(1)
E(1) E1(1)
max
0.25 0.30 4.10

4.20
0.19 0.24 3.80
5.0
4.8
3.3
3.1
L1
L2
1.27
6.2
5.8
0.85
0.40
1.3
0.8
1.3
0.8
0.25
0.1
8
0
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT669
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-10-13
06-03-16
MO-235
Fig 18. Package outline SOT669 (LFPAK)

PSMN069-100YS
Product data sheet
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PSMN069-100YS
NXP Semiconductors
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN069-100YS v.2
20101025
Product data sheet
PSMN069-100YS v.1
Modifications:
PSMN069-100YS v.1
PSMN069-100YS
Product data sheet
Status changed from objective to product.

Various changes to content.
20100831
Objective data sheet
12 of 15
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NXP Semiconductors
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
Limited warranty and liability Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Suitability for use NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customers own risk.
Quick reference data The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customers sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customers applications and
products planned, as well as for the planned application and use of
customers third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customers applications or products, or the application or use by customers
third party customer(s). Customer is responsible for doing all necessary
testing for the customers applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customers third party
customer(s). NXP does not accept any liability in this respect.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Limiting values Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Right to make changes NXP Semiconductors reserves the right to make

changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale NXP Semiconductors

products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
PSMN069-100YS
Product data sheet
13 of 15
PSMN069-100YS
NXP Semiconductors
agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customers general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors specifications such use shall be solely at customers
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors
standard warranty and NXP Semiconductors product specifications.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V.
HD Radio and HD Radio logo are trademarks of iBiquity Digital
Corporation.
10. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN069-100YS
Product data sheet
14 of 15
PSMN069-100YS
NXP Semiconductors
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section Legal information.
NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 October 2010
Document identifier: PSMN069-100YS

PSMN069-100YS: 1. Product Profile

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PSMN069-100YS

N-channel LFPAK 100 V 72.4 m standard level MOSFET

Product data sheet

1.2 Features and benefits

Improved mechanical and thermal

High efficiency gains in switching

LFPAK provides maximum power

Lithium-ion battery protection

Server power supplies

1.4 Quick reference data

Quick reference data

Tmb = 25 C; see Figure 2

drain-source on-state VGS = 10 V; ID = 5 A;

N-channel LFPAK 100 V 72.4 m standard level MOSFET

Quick reference data continued

total gate charge

mounting base; connected to

plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 25 October 2010

NXP B.V. 2010. All rights reserved.

N-channel LFPAK 100 V 72.4 m standard level MOSFET

In accordance with the Absolute Maximum Rating System (IEC 60134).

VGS = 10 V; Tmb = 100 C; see Figure 1

VGS = 10 V; Tmb = 25 C; see Figure 1

peak drain current

pulsed; tp 10 s; Tmb = 25 C; see Figure 3

total power dissipation

Tmb = 25 C; see Figure 2

peak soldering temperature

peak source current

Continuous drain current as a function of

Product data sheet

Normalized total power dissipation as a

All information provided in this document is subject to legal disclaimers.

Rev. 02 25 October 2010

NXP B.V. 2010. All rights reserved.

N-channel LFPAK 100 V 72.4 m standard level MOSFET

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 25 October 2010

NXP B.V. 2010. All rights reserved.

N-channel LFPAK 100 V 72.4 m standard level MOSFET

thermal resistance from junction to

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 25 October 2010

NXP B.V. 2010. All rights reserved.

N-channel LFPAK 100 V 72.4 m standard level MOSFET

ID = 0.25 mA; VGS = 0 V; Tj = -55 C

gate-source threshold voltage

ID = 0.25 mA; VGS = 0 V; Tj = 25 C

ID = 1 mA; VDS = VGS; Tj = 175 C;

ID = 1 mA; VDS = VGS; Tj = 25 C;

ID = 1 mA; VDS = VGS; Tj = -55 C;

drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 125 C

gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 C

internal gate resistance (AC)

total gate charge

gate-source plateau voltage