Electronics Devices and Circuits

Prof.Dolli Sudershan
Topic 1) Transistors: Marks 24

Introduction:-
Basic concept,
Types of transistors, operation,
Configuration (CB, CC & CE) & its input -output characteristics,
Comparison between CB, CC & CE, Transistor as switch
BJT Biasing:-
Need for biasing,
Concept of DC load line,
operating point (Q), stabilization, thermal runaway
Types of biasing
o Fixed biasing circuits.
o Base biased with emitter feedback.
o Voltage divider















Electronics Devices and Circuits
Prof.Dolli Sudershan
Basic concept:-
The transistoran entirely new type of electronic device is capable of achieving amplification of weak
signals in a fashion comparable and often superior to that realized by vacuum tubes. Transistors are far
smaller than vacuum tubes, have no filament and hence need no heating power and may be operated in
any position.
They are mechanically strong, have practically unlimited life and can do some jobs better than vacuum
tubes.
A transistor consists of two PN junctions formed by sandwiching either p-type or n-type semiconductor
between a pair of opposite types. Accordingly ; there are two types of transistors, namely;
o n-p-n transistor
o p-n-p transistor
An n-p-n transistor is composed of two n-type semiconductors separated by a thin section of p-type as
shown in Fig. (i). However, a p-n-p transistor is formed by two p-sections separated by a thin section of
n-type as shown in Fig. (ii).

In each type of transistor, the following points may be noted :
o These are two PN junctions. Therefore, a transistor may be regarded as a combination of two
diodes connected back to back.
o There are three terminals, one taken from each type of semiconductor.
o The middle section is a very thin layer. This is the most important factor in the function of a
transistor.

Why named as Transistor?
A transistor has two PN junctions.
One junction is forward biased and the other is reverse biased.
The forward biased junction has a low resistance path whereas a reverse biased junction has a high
resistance path.
The weak signal is introduced in the low resistance circuit and output is taken from the high resistance
circuit. Therefore, a transistor transfers a signal from a low resistance to high resistance.
The prefix trans means the signal transfer property of the device while istor classifies it as a solid
element in the same general family with resistors.

Naming the transistor terminals:-
A transistor (PNP or NPN) has three sections of doped semiconductors.
The section on one side is the emitter and the section on the opposite side is the collector. The middle
section is called the base and forms two junctions between the emitter and collector.
o Emitter:-
The section on one side that supplies charge carriers (electrons or holes) is called the
emitter. The emitter is always forward biased w.r.t. base so that it can supply a large
number of majority carriers.
In Fig. (i), the emitter (p-type) of PNP transistor is forward biased and supplies hole
charges to its junction with the base. Similarly, in Fig. (ii), the emitter (n-type) of NPN
transistor has a forward bias and supplies free electrons to its junction with the base.
Electronics Devices and Circuits
Prof.Dolli Sudershan

o Collector:-
The section on the other side that collects the charges is called the collector. The collector
is always reverse biased. Its function is to remove charges from its junction with the base.
In Fig. (i), the collector (p-type) of PNP transistor has a reverse bias and receives hole
charges that flow in the output circuit. Similarly, in Fig. (ii), the collector (n-type) of
NPN transistor has reverse bias and receives electrons.

o Base:-
The middle section which forms two PN-junctions between the emitter and collector is
called the base.
The base-emitter junction is forward biased, allowing low resistance for the emitter
circuit.
The base-collector junction is reverse biased and provides high resistance in the collector
circuit.


Facts about transistor:-

The transistor has three regions, namely; emitter, base and collector.
1. The base is much thinner than the emitter while collector is wider than both as shown in Fig.
2. The emitter is heavily doped so that it can inject a large number of charge carriers (electrons or
holes) into the base. The base is lightly doped and very thin; it passes most of the emitter injected
charge carriers to the collector. The collector is moderately doped.
3. The transistor has two PN junctions i.e. it is like two diodes. The junction between emitter and
base may be called emitter-base diode or simply the emitter diode. The junction between the base
and collector may be called collector-base diode or simply collector diode.
4. The emitter diode is always forward biased whereas collector diode is always reverse biased.
5. The resistance of emitter diode (forward biased) is very small as compared to collector diode
(reverse biased). Therefore, forward bias applied to the emitter diode is generally very small
whereas reverse bias on the collector diode is much higher.







Electronics Devices and Circuits
Prof.Dolli Sudershan


Transistor symbols:-

However, for the sake of convenience, the transistors are represented by schematic diagrams. The
symbols used for NPN and PNP transistors are shown in Fig.
Note that emitter is shown by an arrow which indicates the direction of conventional current flow with
forward bias. For NPN connection, it is clear that conventional current flows out of the emitter as
indicated by the outgoing arrow in Fig. (i). similarly, for PNP connection, the conventional current flows
into the emitter as indicated by inward arrow in Fig. (ii).

Transistor Biasing (operating regions):-
Applying DC voltages across the transistors terminals is called biasing.








I. Active region:-
o In this mode, emitter base junction of a transistor is forward biased and the collector base
junction is reversed biased as shown in figure.
o The region between cut off and saturation is known as active region. In the active region,
collector-base junction remains reverse biased while base-emitter junction remains forward
biased. Consequently, the transistor will function normally in this region.
II. Saturation region:-
o In this mode, both emitter base junction and collector base junction is forward biased.
o Here the transistor has very large value of current.
o The transistor operated in this region is used as a closed switch (ON).
III. Cut-off region:-
o In this mode, both emitter base and collector base junction is reverse biased.
o Here the transistor practically has zero current.
o The transistor is operated in this mode, when it is used as open switch (OFF).


Electronics Devices and Circuits
Prof.Dolli Sudershan
Sr.No Operating mode Emitter base junction Collector base junction Application
1. Active Forward Reverse Amplifier
2. Saturation Forward Forward Closed switch (ON)
3. Cut-off Reverse Reverse Open switch (OFF)

Transistors configurations:-
There are three leads in a transistor viz., emitter, base and collector terminals.
However, when a transistor is to be connected in a circuit, we require four terminals; two for the input
and two for the output.
This difficulty is overcome by making one terminal of the transistor common to both input and output
terminals.
The input is fed between this common terminal and one of the other two terminals.
The output is obtained between the common terminal and the remaining terminal.
Accordingly; a transistor can be connected in a circuit in the following three ways :
1. Common base configuration.
2. Common emitter configuration.
3. Common collector configuration.

I. Common Base configuration:-
In this circuit arrangement, input is applied between emitter and base and output is taken from
collector and base.
Here, base of the transistor is common to both input and output circuits and hence the name common
base connection.
The ratio of change in collector current to the change in emitter current at constant collector-base
voltage VCB is known as current amplification factor i.e.


Input characteristic:-

Figure (A) Input characteristics
Electronics Devices and Circuits
Prof.Dolli Sudershan
o It is the curve between emitter current I
E
and emitter-base voltage V
EB
at constant collector-
base voltage V
CB
.
o The emitter current is generally taken along y-axis and emitter-base voltage along x-axis. Fig
(A) shows the input characteristics of a typical transistor in CB arrangement.
o The following points may be noted from these characteristics :-
The emitter current I
E
increases rapidly with small increase in emitter-base voltage
V
EB
. It means that input resistance is very small.
The emitter current is almost independent of collector-base voltage V
CB
.

o Input resistance:- It is the ratio of change in emitter-base voltage (V
EB
) to the resulting
change in emitter current (I
E
) at constant collector-base voltage (V
CB
) i.e.
Input resistance (r
i
) =

o As a very small V
EB
is sufficient to produce a large flow of emitter current I
E
, therefore, input
resistance is quite small, of the order of a few ohms.
Output characteristic:-

Figure (B) output characteristics

o It is the curve between collector current I
C
and collector-base voltage V
CB
at constant emitter
current I
E
.
o Generally, collector current is taken along y-axis and collector- base voltage along x-axis.
Fig. (B) Shows the output characteristics of a typical transistor in CB arrangement.
o The following points may be noted from the characteristics :-
The collector current I
C
varies with V
CB
only at very low voltages (< 1V). The
transistor is never operated in this region.
When the value of V
CB
is raised above 1 2 V, the collector current becomes
constant as indicated by straight horizontal curves. It means that now I
C
is
independent of V
CB
and depends upon I
E
only.
This is consistent with the theory that the emitter current flows almost entirely to the
collector terminal. Thus transistor is always operated in this region.
o Output resistance:- It is the ratio of change in collector-base voltage (V
CB
) to the resulting
change in collector current (I
C
) at constant emitter current i.e.
Output resistance (r
o
) =

o The output resistance of C
B
circuit is very high, of the order of several tens of kilo-ohms.
This is not surprising because the collector current changes very slightly with the change in
V
CB
.




Electronics Devices and Circuits
Prof.Dolli Sudershan
II. Common Emitter configuration:-
In this circuit arrangement, input is applied between base and emitter and output is taken from the
collector and emitter.
Here, emitter of the transistor is common to both input and output circuits and hence the name common
emitter connection.
The ratio of change in collector current (IC) to the change in base current (IB) is known as base
current amplification factor i.e.


Input characteristic:-

o It is the curve between base current I
B
and base-emitter voltage V
BE
at constant collector-
emitter voltage V
CE
.
o The input characteristics of a CE connection can be determined by the circuit shown in Fig.
o Keeping V
CE
constant (say at 10 V), note the base current I
B
for various values of V
BE
. Then
plot the readings obtained on the graph, taking I
B
along y-axis and V
BE
along x-axis.
o The following points may be noted from the characteristics :-
The characteristic is similar to that of a forward biased diode curve.
This is expected since the base-emitter section of transistor is a diode and it is
forward biased.
As compared to CB arrangement, I
B
increases less rapidly with V
BE
. Therefore, input
resistance of a CE circuit is higher than that of CB circuit.
o Input resistance:- It is the ratio of change in base-emitter voltage (V
BE
) to the change in
base current (I
B
) at constant V
CE
i.e.
Input resistance (r
i
) =

o The value of input resistance for a CE circuit is of the order of a few hundred ohms.




Electronics Devices and Circuits
Prof.Dolli Sudershan
Output characteristic:-

o It is the curve between collector current IC and collector-emitter voltage V
CE
at constant base
current I
B
.
o The output characteristics of a CE circuit can be drawn with the help of the circuit shown in
Fig.
o The following points may be noted from the characteristics:-
The collector current I
C
varies with V
CE
, for V
CE
between 0 and 1V only. After this,
collector current becomes almost constant and independent of V
CE
.
This value of V
CE
up to which collector current I
C
changes with V
CE
is called the knee
voltage (Vknee). The transistors are always operated in the region above knee
voltage.
Above knee voltage, I
C
is almost constant. However, a small increase in I
C
with
increasing V
CE
is caused by the collector depletion layer getting wider and capturing a
few more majority carriers before electron-hole combinations occur in the base area.
o Output resistance:- It is the ratio of change in collector-emitter voltage (VCE) to the change
in collector current (IC) at constant IB i.e.
Output resistance (r
o
) =

o It may be noted that whereas the output characteristics of CB circuit are horizontal, they have
noticeable slope for the CE circuit.
o Therefore, the output resistance of a CE circuit is less than that of CB circuit. Its value is of
the order of 50 k.




Sr.No Parameters Common Base Common Emitter Common Collector
1. Common
terminal to input
and output
Base Emitter Collector
2. Input impedance Very Low (about 100 ) Low(about 800 ) Very high (about 500 k)
3. Output
impedance
Very high(about 1M ) High(about 50 k) Low(about 50 )
4. Voltage gain Medium High Less than 1
5. Current gain Less than unity (= Ic/IE) High (=Ic/IB) Greater than CE (=IE/IB)
6. Application Pre amplifier audio amplifier For impedance matching
7. Output signal In phase with input Out of phase with input In phase with input




Electronics Devices and Circuits
Prof.Dolli Sudershan
III. Common Collector configuration:-
Here, emitter of the transistor is common to both input and output circuits and hence the name
common emitter connection.
The ratio of change in emitter current (IE) to the change in base current (IB) is known as
current amplification factor in common collector (CC) arrangement i.e.


















Relation between alpha and beta:-
























Electronics Devices and Circuits
Prof.Dolli Sudershan
Operating principle of PNP transistor:-


Fig. shows the basic connection of a PNP transistor.
The forward bias causes the holes in the p-type emitter to flow towards the base. This constitutes the
emitter current I
E
.
As these holes cross into n-type base, they tend to combine with the electrons.
As the base is lightly doped and very thin, therefore, only a few holes (less than 5%) combine with
the electrons. The remainder (more than 95%) cross into the collector region to constitute collector
current I
C
.
In this way, almost the entire emitter current flows in the collector circuit.
It may be noted that current conduction within PNP transistor is by holes. However, in the external
connecting wires, the current is still by electrons.

Operating principle of NPN transistor:-


Fig. shows the NPN transistor with forward bias to emitter base junction and reverse bias to collector-
base junction.
The forward bias causes the electrons in the n-type emitter to flow towards the base. This constitutes the
emitter current I
E
.
As these electrons flow through the p-type base, they tend to combine with holes.
As the base is lightly doped and very thin, therefore, only a few electrons (less than 5%) combine with
holes to constitute base current I
B
. The remainder (more than 95%) cross over into the collector region to
constitute collector current I
C
.
In this way, almost the entire emitter current flows in the collector circuit. It is clear that emitter current
is the sum of collector and base currents i.e.
I
E
= I
B
+ I
C




Electronics Devices and Circuits
Prof.Dolli Sudershan
Transistor as a switch:-
Concept of load line:-
Define:-

Stabilization:-
Gain:-

Voltage gain:-

Current gain:-

Bandwidth:-


Q point:
For proper operation of transistor, in any application, we set fixed levels of certain voltages & currents in a
transistor. These values of currents & voltages define the point at which transistor operates. This point is called
operating point. It is also known as quiescent point or Q point.


Thermal runaway:-


The reverse saturation current in semiconductor devices changes with temperature. The reverse saturation current
approximately doubles for every 100 c rise in temperature.
2. As the leakage current of transistor increases, collector current (Ic) increases
3. The increase in power dissipation at collector base junction.
4. This in turn increases the collector base junction causing the collector current to further increase.
5. This process becomes cumulative. & it is possible that the ratings of the transistor are exceeded. If it happens, the
device gets burnt out. This process is known as Thermal Runaway.
Thermal runaway can be avoided by
1) Using stabilization circuitry
2) Heat sink





Heat sink:-
Electronics Devices and Circuits
Prof.Dolli Sudershan
In power transistor the power dissipated at the collector junction is larger. This may
cause the
junction temperature to rise to a dangerous level. We can increase the power handling
capacity of a
transistor by using a sheet of metal called heat sink. Connecting a heat sink to a
transistor increases
the area from which heat is to be transferred to the atmosphere.








Need of biasing:-
For deciding the location of Q point (operating point)as per the application biasing is used.
E.g.: For faithful amplification Q is selected at the centre of load line by using biasing
For switch Q point is selected on y-axis (saturation region) & x-axis (cut-off region).



Voltage divider circuit:-


In other biasing techniques the values of d.c. bias current and voltage of the collector depends upon the current gain
of the transistor.
But is temperature sensitive especially for silicon transistors. Fig. below shows the voltage divider or self-bias
circuit.
The name voltage divider is derived from the fact that resistors R1 and R2 form a potential divider across the VCC
supply.
Electronics Devices and Circuits
Prof.Dolli Sudershan
The voltage drop across resistor R2 forward biases the base emitter junction of a transistor. The resistor RE provides
the d.c. stability.








Applications of CB














Electronics Devices and Circuits
Prof.Dolli Sudershan
Self biasing of FET:-


Circuit analysis:- 1M
G keeps gate voltage at 0V and its large value prevent loading of ac signal source.
s.
capacitor Cs keeps the source of the JFET efficiency at ac ground.

Circuit operation: - 1 1/2M
variation in the drain current.
itive half cycle input, reverse biasing across gate and source decreases; therefore drain current increases
for negative half cycle input, reveres biasing across gate and source increases, therefore drain current decreases.
oltage produces large change in the drain current, this produces large output across
the load. Hence FET acts as an amplifier.




Transistor as switch:-






Electronics Devices and Circuits
Prof.Dolli Sudershan


















































Electronics Devices and Circuits
Prof.Dolli Sudershan
Topic 2) Field effect Transistor: Marks 12


FET:-
Construction of JFET, (n-channel & p-channel),
Working principle & characteristics, (Drain characteristics & Transfer
characteristics)
FET biasing:-
Source self bias
Drain to source bias
Applications of FET
MOSFET:-
Introduction, types, construction, working & Applications.






























Electronics Devices and Circuits
Prof.Dolli Sudershan
Field effect transistor:-
The field effect transistor (FET) has, by virtue of its construction and biasing, its input impedance may
be more than 100 mega ohms.
The FET is generally much less noisy than the ordinary or bipolar transistor.
The rapidly expanding FET market has led many semiconductor marketing managers to believe that this
device will soon become the most important electronic device, primarily because of its integrated-circuit
applications.

There are two basic types of field effect transistors:-
o Junction field effect transistor (JFET)
o Metal oxide semiconductor field effect transistor (MOSFET)


Junction field effect transistor:-
A junction field effect transistor is a three terminal semiconductor device in which current conduction
is by one type of carrier i.e., electrons or holes, and is controlled by means of an electric field between
the gate terminal and the conducting channel of the device..

Figure (1) Figure (2)
A JFET consists of a p-type or n-type silicon bar containing two PN junctions at the sides as shown in
Fig (1).
The bar forms the conducting channel for the charge carriers.
If the bar is of n-type, it is called n-channel JFET as shown in Fig (i) and if the bar is of p-type, it is
called a p-channel JFET as shown in Fig (ii).
The two PN junctions forming diodes are connected internally and a common terminal called gate is
taken out. Other terminals are source and drain taken out from the bar as shown.
Thus a JFET has essentially three terminals i.e. gate (G), source (S) and drain (D).
Figure (2) shows the schematic symbol of JFET. The vertical line in the symbol may be thought as
channel and source (S) and drain (D) connected to this line.
If the channel is n-type, the arrow on the gate points towards the channel as shown in Fig (i). However,
for p-type channel, the arrow on the gate points from channel to gate as shown in Fig (ii).








Electronics Devices and Circuits
Prof.Dolli Sudershan
N-channel JFET:-

Working principle:-
The current conduction by charge carriers (i.e. free electrons in this case) is through the channel between
the two depletion layers and out of the drain.
The width and hence resistance of this channel can be controlled by changing the input voltage V
GS
.
Thus JFET operates on the principle that width and hence resistance of the conducting channel can be
varied by changing the reverse voltage V
GS
. In other words, the magnitude of drain current (ID) can be
changed by altering V
GS
.
Working:-
The working of JFET is as under :
(i) When voltage on the gate is zero:-
The two PN junctions at the sides of the bar establish depletion layers.
The electrons will flow from source to drain through a channel between the depletion
layers.
The size of these layers determines the width of the channel and hence the current
conduction through the bar.
Since IDSS is measured under shorted gate conditions, it is the maximum drain current
that you can get with normal operation of JFET.
(ii) When V
GS
is applied:-
When a reverse voltage V
GS
is applied between the gate and source the width of the
depletion layers is increased.
This reduces the width of conducting channel, thereby increasing the resistance of n-type
bar. Consequently, the current from source to drain is decreased.
Thus current from source to drain can be controlled by the application of potential (i.e.
electric field) on the gate. For this reason, the device is called field effect transistor.
The curve between drain current (I
D
) and drain-source voltage (V
DS
) of a JFET at constant gate to source
voltage (V
GS
) is known as output characteristics of JFET.



Electronics Devices and Circuits
Prof.Dolli Sudershan
Drain characteristics or output characteristics:-


The following points may be noted from the characteristics:-
Ohmic region:-
o In this region the drain current increases linearly with the increase in drain to source voltage,
obeying ohms law.
o Hence it acts like a resistor in this region, so called as Ohmic region.
o This region is shown as a curve OA in the figure.
o Since IDSS is measured under shorted gate conditions, it is the maximum drain current that you
can get with normal operation of JFET.
Active region:-
o The region between VP and VDS (max) (breakdown voltage) is called constant-current region or
active region.
o As long as VDS is kept within this range, ID will remain constant for a constant value of VGS.
In other words, in the active region, JFET behaves as a constantcurrent device.
o For proper working of JFET, it must be operated in the active region.
o At first, the drain current ID rises rapidly with drain-source voltage VDS but then becomes
constant. The drain-source voltage above which drain current becomes constant is known as
pinch off voltage VP.
o After pinch off voltage, the channel width becomes so narrow that depletion layers almost touch
each other. Consequently, drain current remains constant.
Breakdown region:-
o In this region, the drain current increase rapidly as the drain to source voltage is also increased.
o This happens because of breakdown of gate to source junction.
o The drain to source voltage at which the junction breaks down is called breakdown voltage.
o There is a maximum drain voltage [VDS (max)] that can be applied to a JFET. If the drain
voltage exceeds VDS (max), JFET would breakdown as shown in Fig.


Terms in JFET:-
Active region:-
o The region between VP and VDS (max) (breakdown voltage) is called constant-current region or
active region. As long as VDS is kept within this range, ID will remain constant.


Pinch-off voltage (V
P
):-
o It is the minimum drain-source voltage at which the drain current essentially becomes constant.


Electronics Devices and Circuits
Prof.Dolli Sudershan
Gate to source cut-off voltage (V
GS(OFF)
):-
o It is the gate-source voltage where the channel is completely cut off and the drain current
becomes zero.


Shorted-gate drain current (I
DSS
):-
o It is the drain current with source short-circuited to gate (i.e. VGS = 0) and drain voltage (VDS)
equal to pinch off voltage.


DC drain resistance (static resistance):-
o It is defined as the ratio of drain to source voltage (VDS) to the drain current (ID).


AC drain resistance:-

Transconductance:-

Amplification factor:-

Input resistance:-
o It is defined as the ratio of gate to source voltage (VGS) to the gate current (IG).



Relation between amplification factor, drain resistance and Transconductance:-


Electronics Devices and Circuits
Prof.Dolli Sudershan
Advantages of JFET:-
1. It has very high input impedance (of the order of 100 M).
2. As JFET has no junction, so there is less noise.
3. A JFET has a negative temperature co-efficient of resistance. This avoids the risk of thermal runaway.
4. A JFET has a very high power gain.
5. A JFET has a smaller size, longer life and high efficiency.
6. JFET requires less space in case of IC fabrication.
7. High power handling capacity.



Compare BJT and FET:-

Sr.
No
Parameters BJT FET
1 Types of carriers Bipolar device (both charge
carriers i.e. electrons as well as
holes)
Unipolar device (either holes or
electrons)
2 Switching speed lower switching speed Faster switching speed
3 Thermal stability Less thermal stability More thermal stability
4 Space in case of IC fabrication More space required Less space required
5 Control parameter Current controlled device Voltage controlled device
6 Input impedance Less input impedance More input impedance
7 Output impedance More output impedance Less output impedance
8 Power gain Low power gain High power gain
9 Offset voltage Offset voltage present No offset voltage
10 Noise level More noise level Less noise level
11 Input current Base current in microamperes Zero gate current
12 Symbol



13 Applications As:-
Amplifier,
Switch, etc
As:-
Amplifier,
Switch, etc
14 Advantages Linear device, higher gain-
bandwidth product, less cost as
compared to FET, etc
High power handling capability,
Smaller size, easy to fabricate,
etc
15 Thermal runaway Exist in BJT Doesnt exist in FET










Electronics Devices and Circuits
Prof.Dolli Sudershan
There are two basic types of MOSFET:-
1. Depletion-type MOSFET or D-MOSFET. The D-MOSFET can be operated in both the depletion-
mode and the enhancement-mode.
2. Enhancement-type MOSFET or E-MOSFET. The E-MOSFET can be operated only in
enhancement-mode.



Why the name MOSFET? The reader may wonder why the device is called MOSFET.
The SiO2 layer is an insulator.
The gate terminal is made of a metal conductor.
Thus, going from gate to substrate, you have a metal oxide semiconductor and hence the name
MOSFET.
Since the gate is insulated from the channel, the MOSFET is sometimes called insulated-gate FET
(IGFET). However, this term is rarely used in place of the term MOSFET.


Depletion type of MOSFET:-
L




D-MOSFET Transfer Characteristic
Fig. 19.49 shows the transfer characteristic curve (or transconductance curve) for n-channel D-
MOSFET.
The behaviour of this device can be beautifully explained with the help of this curve as under :
(i) The point on the curve where VGS = 0, ID = IDSS. It is expected because IDSS is the value of ID
when gate and source terminals are shorted i.e. VGS = 0.
(ii) As VGS goes negative, ID decreases below the value of IDSS till ID reaches zero when VGS =
VGS (off) just as with JFET.
(iii) When VGS is positive, ID increases above the value of IDSS. The maximum allowable value of
ID is given on the data sheet of D-MOSFET.

Electronics Devices and Circuits
Prof.Dolli Sudershan






Compare jfet and d-mosfet:-
Symbol
Transfer charac curve
Modes of operation
Advantages
Disad
Applications

Compare d-mosfet and e-mosfet
Symbol
Charac
Modes of operation
Advan
Disadv
Application










Topic 3) Amplifier:
3.1 Small Signal Amplifier: [08]
Concept of amplifier,
Electronics Devices and Circuits
Prof.Dolli Sudershan
Single stage CE amplifier,
Frequency response,
Multistage amplifier, circuit diagram, working principle ,frequency
response.:
Types of amplifier coupling:
Circuit diagram and operation of
i. RC coupling,
ii. Transformer coupling
iii. Direct coupling.
3.2 FET Amplifier: [04]
Common source, working principle and applications.
3.3 Power Amplifier: [08]
Comparison between small signal amplifier and power amplifier,
Classification: class A, class B, class AB & class C.with respect to
operating point on load line,efficiency,
Single stage class A , power amplifier circuit: operation, input output
waveforms.
Class B push-pull amplifier,operation ,input out waveforms and its
advantages & disadvantages, applications of power amplifier.
3.4 Tuned Amplifier: [04]
Introduction & necessity of tuned amplifier,
basic tuned circuit,
Circuit diagram & operating principle of single & double tuned
amplifiers.