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by BC556/D

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors

BC556,B

PNP Silicon

BC557A,B,C
BC558B

COLLECTOR
1
2
BASE
3
EMITTER

MAXIMUM RATINGS

1
2

Symbol

BC
556

BC
557

BC
558

Unit

Collector Emitter Voltage

VCEO

65

45

30

Vdc

Collector Base Voltage

VCBO

80

50

30

Vdc

Emitter Base Voltage

VEBO

5.0

Vdc

Collector Current Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

1.5
12

Watt
mW/C

TJ, Tstg

55 to +150

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

C/W

Thermal Resistance, Junction to Case

RqJC

83.3

C/W

Rating

Operating and Storage Junction

Temperature Range

CASE 2904, STYLE 17

TO92 (TO226AA)

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

65
45
30

80
50
30

5.0
5.0
5.0

2.0
2.0
2.0

100
100
100
4.0
4.0
4.0

Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)

Collector Base Breakdown Voltage

(IC = 100 Adc)

Emitter Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

CollectorEmitter Leakage Current

(VCES = 40 V)
(VCES = 20 V)
(VCES = 20 V, TA = 125C)

V(BR)CEO
BC556
BC557
BC558

V(BR)CBO
BC556
BC557
BC558

V(BR)EBO
BC556
BC557
BC558

ICES
BC556
BC557
BC558
BC556
BC557
BC558

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

nA

BC556,B BC557A,B,C BC558B

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)

Symbol

Characteristic

Min

Typ

Max

120
120
120
120
180
420

90
150
270

170
290
500
120
180
300

500
800
800
220
460
800

0.075
0.3
0.25

0.3
0.6
0.65

0.7
1.0

0.55

0.62
0.7

0.7
0.82

280
320
360

3.0

6.0

2.0
2.0
2.0

10
10
10

125
125
125
240
450

220
330
600

500
900
260
500
900

Unit

ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 V)

(IC = 2.0 mAdc, VCE = 5.0 V)

(IC = 100 mAdc, VCE = 5.0 V)

hFE
BC557A
BC556B/557B/558B
BC557C
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
BC557A
BC556B/557B/558B
BC557C

Collector Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see Note 1)
(IC = 100 mAdc, IB = 5.0 mAdc)

VCE(sat)

Base Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)

VBE(sat)

BaseEmitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)

VBE(on)

SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

fT
BC556
BC557
BC558

Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 V,
RS = 2.0 kW, f = 1.0 kHz, f = 200 Hz)
SmallSignal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)

Cob

MHz

NF
BC556
BC557
BC558

dB

hfe
BC556
BC557/558
BC557A
BC556B/557B/558B
BC557C

pF

Note 1: IC = 10 mAdc on the constant base current characteristics, which yields the point IC = 11 mAdc, VCE = 1.0 V.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BC556,B BC557A,B,C BC558B

BC557/BC558

1.5

1.0
TA = 25C

0.9

VCE = 10 V
TA = 25C

VBE(sat) @ IC/IB = 10

0.8
V, VOLTAGE (VOLTS)

hFE , NORMALIZED DC CURRENT GAIN

2.0

1.0
0.7
0.5

0.7
VBE(on) @ VCE = 10 V

0.6
0.5
0.4
0.3
0.2

0.3

VCE(sat) @ IC/IB = 10

0.1
0.2
0.2

0.5 1.0 2.0

5.0 10 20
50
IC, COLLECTOR CURRENT (mAdc)

0
0.1 0.2

100 200

Figure 1. Normalized DC Current Gain

1.2
IC =
10 mA

IC = 50 mA

IC = 200 mA
IC = 100 mA

IC = 20 mA

0.4

0.02

VB , TEMPERATURE COEFFICIENT (mV/ C)

VCE , COLLECTOREMITTER VOLTAGE (V)

TA = 25C

55C to +125C
1.2
1.6
2.0
2.4
2.8

10 20

0.1
1.0
IB, BASE CURRENT (mA)

0.2

10
Cib

7.0

TA = 25C
5.0
Cob

3.0
2.0

1.0
0.4 0.6

1.0

2.0

4.0 6.0

10

20 30 40

10
1.0
IC, COLLECTOR CURRENT (mA)

100

Figure 4. BaseEmitter Temperature Coefficient

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

Figure 3. Collector Saturation Region

C, CAPACITANCE (pF)

100

1.0

1.6

50

Figure 2. Saturation and On Voltages

2.0

0.8

0.5 1.0 2.0

5.0 10 20
IC, COLLECTOR CURRENT (mAdc)

400
300
200
150

VCE = 10 V
TA = 25C

100
80
60
40
30
20
0.5

1.0

2.0 3.0

5.0

10

20

30

50

VR, REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances

Figure 6. CurrentGain Bandwidth Product

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BC556,B BC557A,B,C BC558B

BC556

TJ = 25C

VCE = 5.0 V
TA = 25C

0.8
V, VOLTAGE (VOLTS)

hFE , DC CURRENT GAIN (NORMALIZED)

1.0

2.0
1.0
0.5

VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4

0.2
0.2

VCE(sat) @ IC/IB = 10
0
0.2

1.0 2.0 5.0 10 20 50 100 200

IC, COLLECTOR CURRENT (AMP)

0.1 0.2

0.5

50 100 200
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)

Figure 8. On Voltage

2.0

1.0
VB, TEMPERATURE COEFFICIENT (mV/ C)

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 7. DC Current Gain

1.6

1.2

IC =
10 mA

20 mA

50 mA

100 mA 200 mA

0.8

0.4
TJ = 25C
0
0.02

0.05 0.1 0.2

0.5 1.0 2.0
IB, BASE CURRENT (mA)

5.0

10

20

1.4

1.8

2.6

3.0
0.2

f T, CURRENTGAIN BANDWIDTH PRODUCT

C, CAPACITANCE (pF)

TJ = 25C
Cib

10
8.0
Cob

4.0
2.0
0.1 0.2

0.5 1.0 2.0

5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

0.5 1.0

50
2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)

100 200

Figure 10. BaseEmitter Temperature Coefficient

40

6.0

55C to 125C

2.2

Figure 9. Collector Saturation Region

20

VB for VBE

50 100

500

VCE = 5.0 V

200
100
50

20

100
1.0
10
IC, COLLECTOR CURRENT (mA)

Figure 12. CurrentGain Bandwidth Product

Motorola SmallSignal Transistors, FETs and Diodes Device Data

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

BC556,B BC557A,B,C BC558B

1.0
0.7
0.5

D = 0.5
0.2

0.3
0.2
0.1

0.05

SINGLE PULSE

0.1
0.07
0.05

SINGLE PULSE

t1
t2
DUTY CYCLE, D = t1/t2

0.03
0.02
0.01
0.1

ZJC(t) = (t) RJC

RJC = 83.3C/W MAX
ZJA(t) = r(t) RJA
RJA = 200C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)

P(pk)

0.2

0.5

1.0

2.0

5.0

10

20
50
t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 13. Thermal Response

200
IC, COLLECTOR CURRENT (mA)

1s

3 ms

100
TA = 25C

50

TJ = 25C

BC558
BC557
BC556

10
5.0

2.0
1.0

BONDING WIRE LIMIT

THERMAL LIMIT
SECOND BREAKDOWN LIMIT

The safe operating area curves indicate ICVCE limits of the

transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.

5.0
10
30 45 65 100
VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BC556,B BC557A,B,C BC558B

PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R
P
L

SEATING
PLANE

K
D
J

X X
G
H
V

SECTION XX

N
N

CASE 02904
(TO226AA)
ISSUE AD

DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
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Motorola SmallSignal Transistors, FETs and Diodes Device Data

*BC556/D*

BC556/D

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