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C and this
product was oxidized using potassiumchlorate for 12h. In the next
step, the remaining liquid and solid particles were centrifuged and
solid product (GO) was repeatedly washed with 5% HCl solution
and distilled water and dried in an oven at 50
, b and b
, respectively. As shown
in Fig. 1a and a
IdV
sMV
(2)
where I is the response current density (A), V is the voltage (V),
s is the potential scan rate (Vs
1
), V is cell applied potential
range (V) and Mis the amount of active materials (g) in the super-
capacitor (includes positive and negative electrodes) [10,22]. The
specic capacitances of the symmetric supercapacitors MGO/MGO
and GO/GO at different voltage scan rate were calculated using Eq.
(2) based on the cyclic voltammograms (Fig. 4a and b) and are
shown in Fig. 4c. As it is shown, the specic capacitance of the
MGO/MGO cell at high scan rate 200mV s
1
is 49.6F g
1
which
is about twice of the specic capacitance of the GO/GO system
(25F g
1
) at some scan rate. While, at lower scan rate 50mV s
1
the specic capacitance of the MGO/MGOcell is 61F g
1
, and about
1.37 times more than the specic capacitance of the GO/GO cell
(44.3F g
1
). These results show facile diffusion of the electrolyte
ions at higher scan rates in the bulk of the MGO nanosheets in view
of the fact that the porosity of the MGO nanosheets are higher than
the GOdense agglomerates. So, the electrolyte ions are more easily
inserted and de-inserted in the MGO nanosheets.
3.3. Galvanostatic chargedischarge and performance evaluation
Galvanostatic charge/discharge experiments were consid-
ered to evaluate the electrochemical performance of the
MGO/MGO and the GO/GO cells. Fig. 5a and b shows the
galvanostatic chargedischarge proles of the symmetric super-
capacitors MGO/MGO and GO/GO at different current densities
(540mA cm
2
). As shown (Fig. 5a and b), the potential varia-
tions of both systems are almost sloping with some steps, which
agrees with the CV results (Fig. 4a and b). This is attributed to the
M. Zabihinpour, H.R. Ghenaatian / Synthetic Metals 175 (2013) 6267 65
Fig. 4. Cyclic voltammetry responses of the symmetric supercapacitors MGO/MGO
(a) and GO/GO (b), at different scan rates 50200mV s
1
in 1MH
2
SO
4
solution and
effect scan rate on specic capacitance of both symmetric cells (c).
potential-dependent nature of Faradic redox reactions of MGO and
GO. It means that upon exchange of the electrons from a neutral
segment of positive and negative electrodes, some local positive or
negative charge deformations occur and according to the charge
neutrality, the ions owto the electrodes.
The calculated specic capacitance of both symmetric cells
based on Eq. (3) versus current density has been shown in Fig. 5c.
Specic capacitance (F g
1
) =
It
VM
(3)
where I denotes the applied constant discharge current (A), t
is discharge time (s) and V is discharge potential window
(V) [23].
As it is shown(Fig. 5c), the specic capacitance of the MGO/MGO
cell at high current density 40mAcm
2
is 43.6F g
1
which is about
1.89 times more than the specic capacitance of the GO/GO
system (23F g
1
). While, at lower current density 5mAcm
2
the
specic capacitance of the MGO/MGO cell is 60F g
1
and about
1.42 times more than the specic capacitance of the GO/GO cell
(42.3F g
1
). The results reveal that the MGO nanosheets can
exhibit higher electrode/electrolyte interface areas and providing
more electroactive regions than the GO.
Another useful parameter used to evaluate supercapacitor per-
formance is equivalent series resistance (ESR), which refers to the
resistance that adds to the impedance due to imperfections within
the electrolyte and capacitors material [3]. It shows the power
properties of thesystemduringthedischargeprocess. TheESRanal-
yses of the MGO/MGO and the GO/GO cells were calculated using
the chargedischarge proles of Fig. 5a and b. The output potential
windowdropped sharply at the beginning of each discharge exper-
iment, proportional to the ESR of the systems. The ESR () could
be calculated according to Eq. (4):
ESR =
E
charge
E
discharge
2I
(4)
where I, E
charge
andE
discharge
are the appliedconstant discharge cur-
rent (A), the output potential windowof the cell at the endof charge
and at the beginning of discharge after the Ohmic drop (V), respec-
tively [3]. These average values of 1.5 and 8 () for the MGO/MGO
and the GO/GO systems, respectively, were obtained at constant
chargedischarge current density of 5mAcm
2
. These lowinternal
resistance value of the MGO/MGOcell conrms that this systemhas
higher power characteristic than the GO/GO cell.
The good performance of the symmetric supercapacitor
MGO/MGO was highlighted using the Ragone plots derived from
theresults of thegalvanostatic dischargecurves (Fig. 5aandb) using
Eqs. (1) and (5) and are shown in Fig. 5d.
Specic power (SP) =
IV
2M
(W kg
1
) (5)
As a result, it is concluded that the MGO/MGO system exhibits
promising performance compared to the GO/GOsystem. For exam-
ple, at a constant current density of 5mA cm
2
, the high specic
energy of 12Wh kg
1
was obtained at the corresponding specic
power of 300Wkg
1
for the MGO/MGO cell, whereas the specic
energy of 8.45Wh kg
1
was obtained for the GO/GOsystem. So, the
specic energy of the symmetric supercapacitor MGO/MGO was
signicantly enhanced upon raising the specic capacitance of the
MGO/MGO cell. These results clearly show that application of the
MGO nanosheets as electroactive electrode materials can be one
of the best ways for fabrication of high energy supercapacitors. The
outstanding performance of the MGO nanosheets material is due to
decrement of ion mobility limitation during the chargedischarge
processes and facile formation of the EDLCs and Faradic reaction
[16].
The symmetric supercapacitors MGO/MGO and GO/GO
were subjected to a prolonged cycle-life test at a constant
chargedischarge current density of 5mAcm
2
for continuous
10,000 cycles and these cycling performances are shown in
Fig. 6.
As it is seen, the symmetric supercapacitor MGO/MGO repre-
sents high specic capacitance of 60F g
1
at initial cycles, which
was decreasedslowly to51F g
1
after 10,000cycles (15%decrease).
Whereas, the GO/GOalternative revealeda lowspecic capacitance
of 42.3F g
1
which was decreased sharply to less than 15F g
1
after
10,000 cycles (65% decrease). This high attenuation in the capac-
itance of the GO/GO system can be reasonably attributed to the
66 M. Zabihinpour, H.R. Ghenaatian / Synthetic Metals 175 (2013) 6267
Fig. 5. Galvanostatic chargedischarge curves of symmetric supercapacitors MGO/MGO (a) and GO/GO (b) at different constant current densities 540mA cm
2
in 1M
H
2
SO
4
solution and effect of current density on specic capacitance of both symmetric cells (c) and Ragon plots relating power density to achievable energy density of both
symmetric systems (d).
agglomeration of the GO. Conversely, the modest decrease of the
capacitance of the MGO/MGO cell suggests good cycle stability can
be reasonably attributed to the surface negative charges of the
MGO nanosheets which prevent aggregation and reducing its sur-
face area. So, from the results, it can be expected that the MGO
nanosheets feature good performance as supercapacitor materials
in the aqueous solutions.
Fig. 6. Dependence of the specic capacitance of the symmetric supercapacitors
MGO/MGO and GO/GO with cycle number at chargedischarge current density of
5 mAcm
2
.
3.4. EIS analysis
The EIS analysis is a powerful andnondestructive methodwhich
can be used to separate different processes and evaluate the kinet-
ics of the under investigation systems. This method has often been
used to study the power sources and electrochemical systems,
especially supercapacitors.
Here, the impedance spectra of the symmetric supercapacitors
MGO/MGO and the GO/GO were performed in 1.0M H
2
SO
4
elec-
trolyte at frequency range 10
2
to 10
5
Hz and shown in Fig. 7 in cell
applied potential 1.2V. As it is seen, the almost vertically straight
lines and semicircle in low and high frequencies of both systems
denitely demonstrate the pseudocapacitive behaviors. From the
intersecting point at high frequency with the real axis, the inter-
nal resistances of the supercapacitor MGO/MGO is less than the
GO/GO system. To better evaluate the performance of these two
systems, the experiment data were tted to the equivalent circuit
model shown in Fig. 7 and were represented in Table 1. Due to
the porous surface of the MGO and the GO electrodes, constant
phase elements CPE
dl
and CPE
F
are used to express C
dl
and C
F
in the
equivalent circuit. The impedance of the constant-phase element
is dened as Z
CPE
=[Q(j)
n
]
1
with 1n1, where Q, and n
are the frequency-independent constant representing capacitance,
angular frequency and a correction factor between 0 and 1, respec-
tively. The mean error of the modulus is less than 1% implying that
the parameter values obtained from EIS tting via such proposed
circuit are reliable. The analysis of Z () is based on Eq. (6):
Z() = R
s
+Z
I
() +Z
F
(W) (6)
M. Zabihinpour, H.R. Ghenaatian / Synthetic Metals 175 (2013) 6267 67
Table 1
Electrical parameters for the supercapacitors MGO/MGO and GO/GO evaluated fromEIS test at applied voltage 1.2 (V) in 1.0MH
2
SO
4
solution.
Cell Rs () R
ct1
() R
ct2
() CPE
dl
CPEF
C
dl
(F cm
2
) n
1
CF (F cm
2
) n
2
MGO/MGO 1.79 0.65 370 0.02 0.68 0.57 0.95
GO/GO 6.09 1.04 740 0.016 0.62 .38 0.89
Fig. 7. Equivalent circuit model and EIS plots of the symmetric supercapacitors
MGO/MGO and GO/GO at cell applied potential 1.2 (V) in 1.0M H
2
SO
4
solution.
The solid lines represent the tting results according to this equivalent circuit.
1
Z
I
()
=
1
R
ct1
+Z
W
+jC
dl
(7)
1
Z
F
()
=
1
R
ct2
+jC
F
(8)
Every element has physical meaning where , R
s
, Z
I
, Z
F
, R
ct1
,
R
ct2
, C
dl
, Z
W
and C
F
are the angular frequency, solution resistance,
impedance of modied lm/electrolyte interfaces, bulk faradic
impedance, ionic charge-transfer resistanceof theredoxtransitions
of the polymer lms, double layer capacitance, Warburg diffu-
sion impedance and bulk faradic pseudocapacitance, respectively
[2426]. As it is seen in Table 1, the double layer capacitance and
bulk faradic pseudocapacitance of the MGO/MGO is much higher
than the GO/GO system which is consistence with the results of
the CV and CD experiments. Also, the R
ct1
in both cases is lower
(approximately 500 times) than the R
ct2
, which suggests a higher
rate of energy storage by the electrically double layer formation as
compared to the Faradic reactions.
4. Conclusion
Nanostructured MGO has been prepared by chemical oxida-
tion followed by ultrasonic irradiation in the presence of KOH
and is used for constructing of a new high energy symmetric
supercapacitor. This systemshows very promising energy storage
characteristic up to 1.2V. Based on the obtained results, the specic
capacitance, specic energy and specic power of 60F g
1
,
12Wh kg
1
and 300Wkg
1
were calculated, respectively. This
study highlights and opens a new rich world of possibilities to
develop carbon materials with large facile synthesis and low cost
for supercapacitor applications.
Acknowledgement
I would like to thank the Payam e Nour University Research
Council is gratefully acknowledged for their nancial support.
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