2N2369A

HIGH-SPEED SATURATED SWITCH

DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 A to 100 mA.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CB O V CE S V CE O V EB O IC I CM Pt ot Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Current (10 s pulse) Total Power Dissipation at T amb 25 C at T c ase 25 C at T c ase 100 C Storage and Junction Temperature Value 40 40 15 4.5 0.2 0.5 0.36 1.2 0.68 65 to 200 Unit V V V V A A W W W C 1/6

T s t g, T j

November 1988

2N2369A
THERMAL DATA
R t h j -c ase R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 146 486 C/W C/W

ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified)

Symbol I CBO I CES V (BR) CBO Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (V B E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Test Conditions V CB = 20 V V CE = 20 V I C = 10 A T amb = 150 C Min. Typ. Max. 30 0.4 Unit A A

40

V (BR)CES

I C = 10 A

40

V (B R)CEO *

I C = 10 mA

15

V (BR) EBO

I E = 10 A I C = 10 mA I C = 30 mA I C = 100 mA I C = 10 mA T am b = 125 C IB IB IB IB = 1 mA = 3 mA = 10 mA = 1 mA = 1 mA = 3 mA = 10 mA = 1 mA C = = = = 0.35 V 1V 0.4 V 1V

4.5 0.14 0.17 0.28 0.19 0.7 0.8 0.9 1.1 0.2 0.25 0.5 0.3 0.85 1.15 1.6 1.02 63 66 71 120 120

V V V V V V V V V

V CE

(s at )*

V BE

(s at )

Base-emitter Saturation Voltage

IB I C = 10 mA I B = 30 mA IB I C = 100 mA IB I C = 10 mA IB T am b = 55 to 125 IC IC IC IC = = = = 10 mA 10 mA 30 mA 100 mA

0.59 40 40 30 20 20 500

h F E*

DC Current Gain

V CE V CE V CE V CE

h F E* fT C CB O t s ** t o n ** t o f f **

DC Current Gain Transition Frequency Collector-base Capacitance Storage Time Turn-on Time Turn-off Time

I C = 10 mA V CE = 0.35 V T am b = 55 C I C = 10 mA f = 100 MHz IE = 0 f = 1 MHz V CE = 10 V V CB = 5 V

50 675 2.3 6 9 13 4 13 12 18 MHz pF ns ns ns

I C = 10 mA V CC = 10 V I B 1 = I B2 = 10 mA I C = 10 mA I B 1 = 3 mA I C = 10 mA I B 1 = 3 mA V CC = 3 V V CC = 3 V I B2 = 1.5 mA

* Pulsed : pulse duration = 300 s, duty cycle = 1 %.

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2N2369A
DC Current Gain. Collector-emitter Saturation Voltage.

Collector-base and emitter-base capacitances.

Contours of Constant Transition Frequency.

Switching Characteristics.

Switching Characteristics.

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2N2369A
Test Circuit for ts

Test Circuit for ton, toff

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2N2369A

TO-18 MECHANICAL DATA

mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch

D G I H E F

L C B

0016043

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2N2369A

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

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