Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11APX

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V
VCBO Collector-Base voltage (open emitter) - 1000 V
VCEO Collector-emitter voltage (open base) - 450 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W
VCEsat Collector-emitter saturation voltage - 1.5 V
ICsat Collector saturation current 3.5 - A
tf Fall time ICsat=2.5A,IB1=0.5A,IB2=0.8A 145 160 ns

PINNING - SOT186A PIN CONFIGURATION SYMBOL

PIN DESCRIPTION c
case

1 base
2 collector
b
3 emitter
case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector to emitter voltage VBE = 0 V - 1000 V
VCEO Collector to emitter voltage (open base) - 450 V
VCBO Collector to base voltage (open emitter) - 1000 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
IB Base current (DC) - 2 A
IBM Base current peak value - 4 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink with heatsink compound - 3.95 K/W
Rth j-a Junction to ambient in free air 55 - K/W

September 1998 1 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11APX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 9 V; IC = 0 A - - 10 mA
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltages IC = 3.0 A; IB = 0.6 A - 0.25 1.5 V
VBEsat Base-emitter saturation voltage IC = 2.5 A; IB = 0.33 A - - 1.3 V
hFE DC current gain IC = 5 mA; VCE = 5 V 10 22 35
hFE IC = 500 mA; VCE = 5 V 14 25 35
hFEsat IC = 2.5 A; VCE = 5 V 10 13.5 17
hFEsat IC = 3.5 A; VCE = 5 V 8 10 12

DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) ICsat = 2.5 A; IB1 = -IB2 = 0.5 A;
RL = 75 ohms; VBB2 = 4 V;
ton Turn-on time 0.5 0.7 µs
ts Turn-off storage time 3.3 4 µs
tf Turn-off fall time 0.33 0.45 µs
Switching times (inductive load) ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH;
-VBB = 5 V
ts Turn-off storage time 1.4 1.6 µs
tf Turn-off fall time 145 160 ns
Switching times (inductive load) ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
ts Turn-off storage time 1.7 1.9 µs
tf Turn-off fall time 160 200 ns

1 Measured with half sine-wave voltage (curve tracer).

September 1998 2 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11APX

ICsat
90 % 90 %
+ 50v
100-200R
IC

10 %
ts
Horizontal ton tf
toff
Oscilloscope
IB1
IB
Vertical
10 %
300R 1R tr 30ns
6V
30-60 Hz
-IB2

Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load.

IC / mA VCC

250 LC

200

IB1 LB
100
T.U.T.
-VBB
0
VCE / V min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

VCC ICsat
90 %

IC

RL

VIM
RB 10 %
0 T.U.T. ts tf t
toff
tp
IB IB1

T
t

-IB2
Fig.3. Test circuit resistive load. VIM = -6 to +8 V Fig.6. Switching times waveforms with inductive load.
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.

September 1998 3 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11APX

ICon VCEsat/V
2.0
90 %

IC 1.6
IC=1A 2A 3A 4A

1.2

10 %

ts tf t 0.8
toff

IB IBon 0.4

t
0.0
0.01 0.10 1.00 10.00
-IBoff IB/A

Fig.7. Switching times waveforms with inductive load. Fig.10. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.

% Normalised Derating VBEsat/V

120
with heatsink compound
110 1.4
100
90 1.2

80 1.0
70
60 P tot
0.8

50
0.6
40
30 0.4
20
0.2
10
0 0.0
0 20 40 60 80 100 120 140
0.1 1.0 10.0
Ths / C IC/A

Fig.8. Normalised power dissipation. Fig.11. Base-Emitter saturation voltage.

PD% = 100⋅PD/PD 25˚C = f (Ths) Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.

h FE VCEsat/V
100
0.5
5V

0.4

0.3
10

0.2

Tj = 25 C
1V 0.1

1 0.0
0.01 0.1 1 10 0 1 10
IC / A IC/A

Fig.9. Typical DC current gain. hFE = f(IC) Fig.12. Collector-Emitter saturation voltage.
parameter VCE Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.

September 1998 4 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11APX

Zth / (K/W) BU1706AX VCC

10

0.5
1 0.2
0.1
LC
0.05
0.1 0.02
tp tp VCL
PD D= IBon
T LB
0.01
D=0 t
T -VBB T.U.T.

0.001
1u 10u 100u 1m 10m 100m 1 10 100
t/s
Fig.13. Transient thermal impedance. Fig.15. Test circuit RBSOA. Vcl ≤ 1000V; Vcc = 150V;
Zth j-hs = f(t); parameter D = tp/T VBB = -5V; LB = 1µH; Lc = 200µH

IC/V
11

10

0
0 200 400 600 800 1,000 1,200
VCE CLAMP/V

Fig.14. Reverse bias safe operating area. Tj ≤ Tj max

September 1998 5 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11APX

IC / A
100

ICM max = 0.01

10
IC max tp =

10 us
II
100 us
(1)
1

1 ms

10 ms
I (2)
0.1 500 ms

DC

III

0.01
1 10 100 1000
VCE / V

Fig.16. Forward bias safe operating area. Ths ≤ 25 ˚C

(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits.
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
III Extension during turn-on in single
transistor converters provided that
RBE ≤ 100 Ω and tp ≤ 0.6 µs.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.

September 1998 6 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11APX

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g 10.3
max
4.6
max
3.2
3.0 2.9 max

Recesses (2x) 2.8

2.5 6.4
0.8 max. depth
15.8
15.8 19 seating max
max. max. plane
3 max.
not tinned

3
2.5

13.5
min.

1 2 3

0.4 M 1.0 (2x)

0.6
2.54 0.9
0.5 0.7
5.08 2.5 1.3

Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1998 7 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11APX

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1998 8 Rev 1.000

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