J Mater Sci: Mater Electron DOI 10.

1007/s10854-012-0745-2

Inuence of annealing temperature on structural, optical and magnetic properties of Zn0.97Cu0.01V0.02O nanoparticles
Huilian Liu Xin Cheng Hongbo Liu Jinghai Yang Jian Cao Yang Liu Xiaoyan Liu Ming Gao Maobin Wei Lianhua Fei Xu Zhang

Received: 18 February 2012 / Accepted: 28 April 2012 Springer Science+Business Media, LLC 2012

Abstract Zn0.97Cu0.01V0.02O nanoparticles have been successfully prepared by the solgel method and sintered in air at the different temperature. The effects of the annealing temperature on the structural, optical and magnetic properties of the obtained samples were studied. The X-ray diffraction (XRD) results showed that the Zn0.97Cu0.01V0.02O nanoparticles was single phase with the ZnO-like wurtzite structure when the annealing temperature was\700 C. The photoluminescence (PL) spectra revealed that as the annealing temperature increased, the intensity of the UV emission increased and the green emission enhanced signicantly. Magnetic measurements indicated that the samples exhibited ferromagnetism at the room temperature. The results of XRD, transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS) revealed that there was no ferromagnetic-related secondary phase in Zn0.97Cu0.01V0.02O nanoparticles, the ferromagnetism of the Zn0.97Cu0.01V0.02O samples was originated from the fact that the Cu and V ions doped into the ZnO lattice. In addition, the saturation magnetization (Ms) increased with the enhancement of the annealing temperature.

1 Introduction Zinc oxide (ZnO) has been attracted considerable attention for its potential applications in ultraviolet light emitters, nonlinear optical devices, gas sensors, spin functional devices, piezoelectric transducers and surface acoustic wave devices [15] due to the excellent chemical and thermal stability, and specic electrical properties. Recently, ZnO-based diluted magnetic semiconductors (DMS) have been recognized as the ideal candidate materials for spintronics, by virtue of the fact that ZnO doped with the transition metal (TM) elements showed room temperature ferromagnetism (RTFM) [613]. However, there is still no denite conclusion on the nature of the RTFM for the DMS, some reports claim that the magnetic signature arises from clustering or impurities while others claim that the magnetic property is intrinsic. In order to avoid the controversies, non-magnetic elements doped ZnO have been studied [1417]. Since that Cu is a kind of non-magnetic element and CuO (Cu2O or clustering) is non-ferromagnetic, which is easy to avoid the controversies regarding the origin of the ferromagnetism, making the interpretation of the ferromagnetism more easily [1820]. Theoretical studies had predicted that doping the V element in the semiconductor oxide may lead to the RTFM [21]. Although many researchers had studied the effects of the structure on the optical and magnetic properties in the ZnVO nanomaterials, the origin of the ferromagnetism for the ZnO based DMS is still in dispute [2224]. From the point view of the mean eld theory, the carrier concentration in the TM doped ZnO-based DMS can inuence the ferromagnetic property [25, 26]. Recently, several researchers [2730] proposed that doping another ion into the TM doped ZnO-based DMS may be an effective way to change the magnetic property of the original sample by introducing the additional

H. Liu X. Cheng H. Liu J. Yang (&) J. Cao Y. Liu X. Liu M. Gao M. Wei L. Fei X. Zhang Institute of Condensed State Physics, Jilin Normal University, Siping 136000, Peoples Republic of China e-mail: jhyang1@jlnu.edu.cn H. Liu X. Cheng H. Liu J. Yang J. Cao Y. Liu X. Liu M. Gao M. Wei L. Fei X. Zhang Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, Jilin, China

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carriers. Hence the Cu doped ZnVO DMS is worth to be studied, the deliberate co-doping with acceptor is essential for the enhancement of the solubility of the acceptors with the stabilization of the ionic charge distributions and the reduction of acceptor binding energy [27, 31]. Since that annealing treatment have a great effect on the properties of the TM-ZnO DMS, such as crystal quality, optical, electric and magnetic property. However, there is little detail report on the effects of the annealing temperature on the properties of the Cu and V co-doped ZnO powders. In our work, the Zn0.97Cu0.01V0.02O powders have been prepared by the solgel method to investigate the inuence of the annealing temperature on their structural, optical and magnetic properties. We focused on the structural and physical properties caused by the different annealing temperatures. And the origin of the ferromagnetism was also discussed.
Fig. 1 XRD patterns of Zn0.97Cu0.01V0.02O samples annealed at different temperatures. Filled diamond indicates the peaks of the impurity phase of CuO

2 Experimental details Appropriate proportions of Zn(NO3)26H2O (99.9 %), NH4VO3(99.9 %) and Cu(NO3)23H2O (99.9 %) highpurity powders were thoroughly mixed according to the desired stoichiometry, the powders were dissolved in water to get a homogeneous solution. The mixture was mixed into C6H8O7H2O (99.5 %) while stirring for 2 h. The solution was dried at 80 C to obtain xerogel. After the swelled xerogel was completed at 130 C, a reticular substance was obtained, then transferred it to an agate mortar and grind to a ne powder. In air atmosphere, the precursors were sintered for 10 h at the different annealing temperature (400, 500, 600 and 700 C), respectively. The structural characterization of the Zn0.97Cu0.01V0.02O sample was performed by XRD on D/max-2500 copper rotating-anode X-ray diffractometer with Cu Ka radiation (40 kV, 200 mA). The size distribution and interplanar distance were investigated by the TEM (200 keV, JEM-2100HR, Japan). The chemical composition of the Zn0.97Cu0.01V0.02O powders annealed at 500 and 600 C were determined by XPS (VG ESCALAB Mark II). The PL measurements of the samples were performed on an HR800 Labram Innity Spectrophotometer, which was excited by a continuous He Cd laser at a wavelength of 325 nm and a power of 10mW. The magnetic hysteresis loops of samples were measured by a Lake Shore 7407 vibrating sample magnetometer (VSM).

3 Results and discussion 3.1 Structural characteristics Typical XRD patterns of the Zn0.97Cu0.01V0.02O powders annealed at the different temperatures are shown in Fig. 1.

When the temperature was \700 C, the samples have the hexagonal wurtzite structure of ZnO (space group P63mc) according to the standard JCPDS card within the sensitivity limitation of XRD. No trace of the copper metal, vanadium metal and any other impurity phases are detected when the samples are sintered at 400, 500 and 600 C, which indicates that the wurtzite structure is not changed by doping. But when the sample annealed at 400 C, the crystallinity of the sample is not very good. However, when the annealing temperature is 700 C, a second phase (CuO as deduced from the X-ray diffraction) is showed,which indicates that sintering temperature should be below 700 C so as to obtain the single-phase Zn0.97Cu0.01V0.02O. From Fig. 1, it can be observed that the intensity and the full width at half maximum (FWHM) of the diffraction peak increases when the annealing temperature increase from 400 to 600 C, which indicate that the crystalline quality of the samples improves with the annealing temperature increased. Moreover, the average particle size was calculated to be 6.0, 9.5 and 30.3 nm approximately by the DebyeScherer formula when the annealing temperature was 400, 500 and 600 C, respectively. Consequently, the grain size of the Zn0.97Cu0.01V0.02O powders was enlarged without altering the crystal structure when increasing the annealing temperature. Figure 2a and b show the representative TEM images of the Zn0.97Cu0.01V0.02O particles annealed at 500 and 600 C. The morphologies of all the samples are found to be nearly spherical in nature with the diameters ranging from 10 to 30 nm, which is in accordance with the results of the XRD. Figure 2c shows the microstructure of the samples annealed at 500 C examined by the high resolution transmission electron microscopy (HRTEM). It can be

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Fig. 2 TEM images of Zn0.97Cu0.01V0.02O particles annealed at 500 C (a), 600 C (b); HRTEM image of Zn0.97Cu0.01V0.02O particles annealed at 500 C (c)

clearly observed that the measured interplanar distance of the fringes is 0.29 nm, which is corresponding to the (0 0 2) planes of the wurtzite ZnO. In addition, a very slight deviation (0.03 nm) in the lattice spacing can be observed compared the Cu and V dope ZnO to the pure ZnO (0.26 nm), which illustrates that the Cu and V atoms have substituted into the ZnO lattice sites. As we know, the radius of Cu? and Cu2? are close to the Zn2? ions, so doping the Cu? or Cu2? ions should not cause much change of the lattice spacing. But the radius of V3?, V4? and V5? ions are smaller than the Zn2? ions, the substitution of the V ions for the Zn ions whould increase the lattice spacing of ZnO. This discloses that the Cu and V doping have affected slightly on the size and morphology of ZnO. 3.2 Chemistry state The high resolution XPS spectra have been performed to study the chemical binding states of the Cu and V ions for

the Zn0.97Cu0.01V0.02O nanoparticles as shown in Fig. 3a (500 C) and b (600 C). All the indexed peaks can be identied to the C, Cu, V, O and Zn. Among them, the carbon arises during the process of sintering since that the citrate was not completely decomposed. The survey scans show no magnetic impurity within the detection limit. The insets of Fig. 3a show the valence bonds of the V and Cu in the Zn0.97Cu0.01V0.02O nanoparticles annealed at 500 C. Based on the Gauss tting, the V 2p3/2 and V 2p1/2 peaks are located at 516.8 and 524.0 eV corresponding to the V5? ions [32]. The peaks located at 932.6 and 952.4 eV can be ascribed to the Cu 2p3/2 and Cu 2p1/2 peak respectively. It is expected that the Cu? 2p3/2 and Cu? 2p1/2 peaks would locate at 932.5 and 952.3 eV, while Cu2? 2p3/2 and Cu2? 2p1/2 peaks would locate at 933.7 and 953.6 eV, respectively. Therefore, we can conclude that the Cu ions present ?1 valence state in the Zn0.97Cu0.01V0.02O nanoparticles annealed at 500 C [26, 33]. Figure 3b shows the XPS spectra collected from the Zn0.97Cu0.01V0.02O nanoparticles annealed at 600 C. The V 2p3/2 and V 2p1/2 core levels are

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Fig. 4 PL spectra of Zn0.97Cu0.01V0.02O nanoparticles annealed at 400, 500 and 600 C

interplanar distance is increased. Hence, we deduce that the Cu and V ions are incorporated into the crystal lattice of the ZnO when the annealing temperature is \700 C according to the results of the XRD, HRTEM and XPS. 3.3 Optical properties To investigate the effects of the annealing temperature on the optical properties of the samples, the room temperature PL spectra of the Zn0.97Cu0.01V0.02O nanoparticles is plotted in Fig. 4. As shown in Fig. 4, the PL spectra of the Zn0.97Cu0.01V0.02O powders sintered at different temperature all show two distinct peaks: one weak and narrow ultraviolet peak, one strong and broad green emission band. As for the ultraviolet emission centered at about 380 nm, it is widely accepted that this emission results from the recombination of free excitons [34, 35]. Therefore, the intensity of the ultraviolet emission is strongly dependent on the density of the free excitons. It is well known that the density of free exciton is closely connected with the crystalline quality. From Fig. 4, it can be seen that the samples annealed at 600 C have the strongest ultraviolet emission, which means the samples have the best crystalline quality just consistent with the XRD results. As for the samples annealed at 400 C, the relatively weak ultraviolet emission may result from the relatively poor crystalline quality due to the low annealing temperature. In addition, the intensity of the visible emission is also increasing with the annealing temperature. The deep level emission band has previously been attributed to several defects in the crystal structure such as O-vacancy (VO), Zn-vacancy (VZn), O-interstitial (Oi) and Zn-interstitial (Zni) [36]. Recently, this deep level emission band had been identied and at

Fig. 3 XPS spectrum of the Zn0.97Cu0.01V0.02O nanoparticles annealed at 500 C (a), 600 C (b). Inset shows local enlargement part of the spectra

located at 517.4 and 524.7 eV, respectively, which suggests that the V dopant is incorporated into the ZnO lattice as V5? ions [31]. And the peaks of Cu 2p3/2 and Cu 2p1/2 are detected at 932.8 and 952.7 eV, respectively, so the Cu ions also present ?1 valence state in the Zn0.97Cu0.01 V0.02O nanoparticles annealed at 600 C [32, 33]. Since that the zero-valence states of the metal clusters or particles are not traced in above two samples. So we can deduce that the V ions incorporate into the ZnO lattice as the V5? ions and the Cu ions incorporate into the ZnO lattice as the Cu? ions on the basis of the XPS results in these samples sintered at 500 and 600 C. The chemistry states of the element do not change with the increasing of the annealing temperature. The XPS results further explain the deviation of the lattice spacing for the two samples. The ionic radius of V5? is smaller than the Zn2? ions and thus the

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least two different defect origins (VO and VZn) with different optical characteristics [37]. In our experiment, when the sample was annealed in air, it is expected that the rich O environment can make VO concentration decrease. Because the additional oxygen can ll into the O vacancy place during the annealing process, which will strongly decrease the concentration of VO. Therefore, it can be concluded that VZn is probably involved in the green light emission. During the thermal treatment process at the high annealing temperature, the concentration of the defects (VZn) increased, so that the PL intensity of green light emission will be much higher. Besides, it can be observed that all the green emission positions show small blue-shift with the increasing temperature. From the results of many researchers [3638], it is more likely that the type and concentration of the defects in ZnO nanostructures have a signicant inuence on the visible emission peak. And different defect emissions also exhibit different temperature dependences. Therefore, the blue-shift of the green emission is possible attributed to the two temperature related transitions between the conduction band, VZn, and Vo levels. With the temperature increased, the concentration of the VZn increase, and the VO will decrease, which results in the green emission blue-shift. Consequently, the changed type and quantity of the defects will leads to the blue-shift and the increase of the green emission. 3.4 Magnetic properties The magnetic measurements on the Zn0.97Cu0.01V0.02O nanoparticles sintered at 400, 500 and 600 C were performed at room temperature using VSM. From Fig. 5, we can observe that all the samples show the clear magnetic hysteresis loop, which reveal that they have a good

Fig. 5 Magnetic hysteresis (MH) loops of Zn0.97Cu0.01V0.02O annealed at 400, 500 and 600 C

ferromagnetism property at room temperature. A number of studies indicate that the FM in the TM-doped ZnO may come from the precipitation of magnetic clusters or the secondary magnetic phases. In our work, the possible origin of the magnetism is micro V and Cu clusters, other phases of vanadium and copper oxide. Since that VO2 is non-magnetic, V2O3, V6O13 and ZnV2O4 are antiferromagnetic [22, 39], only V metal clusters are ferromagnetic at room temperature among V metal and oxides. In our sample, it is unlikely to form the V clusters because that our samples were calcined in air, no V-related impurity phase was detected according to the XRD results. In addition, Cu is non-magnetic element, CuO and Cu2O or clustering are antiferromagnetic [19, 20]. So they should not be the sources of the ferromagnetism in our samples. So the ferromagnetism in Zn0.97Cu0.01V0.02O is not come from clustering or impurities but expected to be intrinsic. The substitution of the Cu and V ions for the Zn sites inconsistently leads to the ferromagnetism in ZnO. The Cu? acting as an acceptor plays the critical role in establishing the ferromagnetic order, which would compensate the electrons arising from Zn2? interstitial in the ZnO sample [26]. Since that there are many uncompensated or localized acceptors in our co-doped powders. By acceptor doping, we can increase the local hole concentration at the anion site, therefore, the local density of states (DOS) at the Fermi level and the exchange interaction are large [33]. Thus, the magnetization can be achieved with a reasonable amount of the acceptor concentration. The addition of the acceptors to the system will therefore increase the magnetization as observed. In addition, many researchers reported the V doped DMS materials have RTFM [22, 40, 41]. Within the framework of the BMP theory [42, 43], when the concentration of the defects exceeds the percolation threshold, the interfacial defects can overlap many dopant ions as well as the adjacent defects, inducing a ferromagnetic coupling between the dopant spins. Thus, the magnetic coupling between the V ions is ferromagnetic mediated by the defects at the interfaces of the nanoparticles, which lead to the observed ferromagnetism at room temperature. So we conclude that the ferromagnetism of the Zn0.97Cu0.01V0.02O nanoparticles in our study is an intrinsic property of the sample. In Fig. 5, the magnetic moment increases steadily with the increase of the annealing temperature, which consistent with the increasing trend of the visible emission. When the sintering temperature increases from 400 to 600 C, the Ms of the samples increase from 0.00683 to 0.00926 emu/g. That is to say, the magnetic ordering in V, Cu co-doping ZnO samples is very sensitive to the annealing temperature. Recently, it has been proposed that defects (VZn and VO) may play an important role in the magnetic origin for DMS. Theoretical studies suggest that the defects can bring

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a marked change in the band structure of the host semiconductors, which make a signicant contribution to the ferromagnetism [44, 45]. Experimentally, the enhancement of the ferromagnetism caused by the defects that reported by many researchers [4648]. In our study, considering the green emission of the PL spectra, it is apparent that the magnetic property has a strong correlation with the defects generated by Zn0.97Cu0.01V0.02O samples. When the ZnO are heated in air, zinc vacancies are increased with the annealing temperature. Thus the defect-induced FM would be increased. From the PL measurement, we know the defects increased with the enhancement of annealing temperature, which would result in the enhancing of the ferromagnetism. Therefore, the defect-induced ferromagnetism can reasonably be included. It is noted that the magnetic properties of the TM-doped ZnO are sensitive to the preparation method. More detailed work is essential in order to understand the magnetic behaviors of these materials.

4 Conclusions In conclusion, the Zn0.97Cu0.01V0.02O nanoparticles with the ZnO-like wurtzite structure were synthesized by the solgel method sintered at different temperature. And the samples were investigated by XRD, TEM, XPS, PL, and VSM. The analysis results revealed that the ferromagnetism was an intrinsic property of the V, Cu co-doped ZnO. From the XPS spectra we concluded that the Cu ions was ?1 valence states and V ions was ?5 valence states. The samples sintered below 700 C have good ferromagnetic property at room temperature. The Cu? doping plays the critical role in establishing the ferromagnetic order. And the defects also related to both the green emission and the ferromagnetism. And the magnetic moment increased with the improvement of the annealing temperature.
Acknowledgments This work is supported by the National Youth Program Foundation of China (Grant Nos. 61008051 and 61178074), the Twentieth Five-Year Program for Science and Technology of Education Department of Jilin Province (Item No. 20110171 and 20110170), Program for the master students scientic and innovative research of Jilin Normal University (Item No. 201129).

References
1. S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, Prog. Mater Sci. 50, 293 (2005) 2. M.H.F. Sluiter, Y. Kawazoe, P. Sharma, A. Inoue, A.R. Raju, C. Rout, U.V. Waghmare, Phys. Rev. Lett. 94, 187204 (2005) 3. J.S. Park, Y. Yamazaki, Y. Takahashi, S.K. Hong, J.H. Chang, T. Fujiwara, T. Yao, Appl. Phys. Lett. 94, 231118 (2009) 4. Z.L. Wang, Adv. Mater. 21, 1311 (2009)

5. Z. Quan, D. Li, B. Sebo, W. Liu, S.S. Guo, S. Xu, H.M. Huang, G.J. Fang, M.Y. Li, X.Z. Zhao, Appl. Surf. Sci. 256, 3669 (2010) 6. J.H. Yang, L.Y. Zhao, Y.J. Zhang, Y.X. Wang, H.L. Liu, M.B. Wei, Solid State Commun. 143, 566 (2007) 7. H.L. Liu, J.H. Yang, Y.J. Zhang, Y.X. Wang, M.B. Wei, Mater. Chem. Phys. 112, 1021 (2008) 8. Y. Liu, J.H. Yang, Q.F. Guana, L.L. Yang, Y.J. Zhang, Y.X. Wang, B. Feng, J. Cao, X.Y. Liu, Y.T. Yang, M.B. Wei, J. Alloys Compd. 486, 835 (2009) 9. Y. Liu, Y.T. Yang, J.H. Yang, Q.F. Guan, H.L. Liu, L.L. Yang, Y.J. Zhang, Y.X. Wang, M.B. Wei, X.Y. Liu, L.H. Fei, X. Cheng, J. Solid State Chem. 184, 1273 (2011) 10. Z.L. Lu, W. Miao, W.Q. Zou, M.X. Xu, F.M. Zhang, J. Alloys Compd. 494, 392 (2010) 11. C.W. Zou, H.J. Wang, M.L. Yi, M. Li, C.S. Liu, L.P. Guo, D.J. Fu, T.W. Kang, Appl. Surf. Sci. 256, 2453 (2010) 12. Y. Liu, J.H. Yang, Q.F. Guan, L.L. Yang, H.L. Liu, Y.J. Zhang, Y.X. Wang, D.D. Wang, J.H. Lang, Y.T. Yang, L.H. Fei, M.B. Wei, Appl. Surf. Sci. 256, 3559 (2010) 13. X.T. Wang, L.P. Zhu, L.Q. Zhang, J. Jiang, Z.G. Yang, Z.Z. Ye, B. He, J. Alloys Compd. 509, 3282 (2011) 14. F.Y. Ran, M. Tanemura, Y. Hayashi, T. Hihara, J. Cryst. Growth 311, 4270 (2009) 15. D.Y. Wang, J. Zhou, G.Z. Liu, J. Alloys Compd. 487, 545 (2009) 16. J. Qi, D.Q. Gao, L. Zhang, Y.H. Yang, Appl. Surf. Sci. 256, 2507 (2010) 17. Z.A. Khan, S. Ghosh, Appl. Phys. Lett. 99, 42504 (2011) 18. H.L. Liu, J.H. Yang, Y.J. Zhang, Y.X. Wang, M.B. Wei, D.D. Wang, L.Y. Zhao, J.H. Lang, M. Gao, J. Mater. Sci.: Mater. Electron. 20, 628 (2009) 19. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science 287, 1019 (2000) 20. M. Wei, N. Braddon, D. Zhi, P.A. Midgley, S.K. Chen, M.G. Blamire, J.L. MacManus-Driscoll, Appl. Phys. Lett. 86, 72514 (2005) 21. S. Kazunori, K.Y. Hiroshi, Jpn. J. Appl. Phys. 39, L555 (2000) 22. N. Tahir, S.T. Hussain, M. Usman, S.K. Hasanain, A. Mumtaz, Appl. Surf. Sci. 255, 8506 (2009) 23. R. Krithiga, G. Chandrasekaran, J. Cryst. Growth 311, 4610 (2009) 24. Z.F. Chun, Z.Z. Yong, Z.W. Hu, Y.J. Feng, Y.J. Ni, Chin. Phys. Lett. 26, 016105 (2009) 25. H.L. Liu, J.H. Yang, Z. Hua, Y. Liu, L.L. Yang, Y.J. Zhang, J. Cao, Mater. Chem. Phys. 125, 656 (2011) 26. Y.Y. Wei, D.L. Hou, S. Qiao, C.M. Zhen, G.D. Tang, Phys. B 404, 2486 (2009) 27. W.W. Zhong, F.M. Liu, L.G. Cai, C.C. Zhou, P. Ding, H. Zhang, J. Alloys Compd. 499, 265 (2010) 28. C.W. Zou, L.X. Shao, L.P. Guo, D.J. Fu, T.W. Kang, J. Cryst. Growth 331, 44 (2011) 29. M.L. Dinesha, H.S. Jayanna, S. Mohanty, S. Ravi, J. Alloys Compd. 490, 618 (2010) 30. S.Y. Zhuo, X.C. Liu, Z. Xiong, J.H. Yang, E.W. Shi, J. Cryst. Growth 332, 39 (2011) 31. T. Yamamoto, Thin Solid Films 420, 100 (2002) 32. D. Borgmann, E. Hums, G. Hopfengartner, G. Wedler, G.W. Spitznagel, I. Rademacher, J. Electron Spectr, Related Phenom. 63, 91 (1993) 33. J.H. Yang, L.H. Fei, H.L. Liu, Y. Liu, M. Gao, Y.J. Zhang, L.L. Yang, J. Alloys Compd. 509, 3672 (2011) 34. R. Sharma, K. Sehrawat, A. Wakahara, R.M. Mehra, Appl. Surf. Sci. 255, 5781 (2009) 35. L.H. Xu, F. Gu, J. Su, Y.L. Chen, X.Y. Li, X.X. Wang, J. Alloys Compd. 509, 29422947 (2011) 36. L.L. Yang, Q.X. Zhao, M. Willander, J.H. Yang, I. Ivanov, J. Appl. Phys. 105, 053503 (2009)

123

J Mater Sci: Mater Electron 37. Q.X. Zhao, P. Klason, M. Willander, H.M. Zhong, W. Lu, J.H. Yang, Appl. Phys. Lett. 87, 211912 (2005) 38. B.Q. Cao, W.P. Cai, H.B. Zeng, Appl. Phys. Lett. 88, 161101 (2006) 39. S. Shin, S. Suga, M. Taniguchi, M. Fujisawa, H. Kanzaki, A. Fujimori, H. Damion, Y. Ueda, K. Kosuge, S. Kachi, Phys. Rev. B 41, 4993 (1990) 40. Z.M. Tian, S.L. Yuan, S.J. Yuan, H.Y. Xie, J.H. He, Y.Q. Wang, K.L. Liu, S.Y. Yin, Solid State Commun. 146, 522525 (2008) 41. Z.M. Tian, S.L. Yuan, S.Y. Yin, S.Q. Zhang, H.Y. Xie, J.H. Miao, Y.Q. Wang, J.H. He, J.Q. Li, J. Magn. Magn. Mater. 320, L5L9 (2008) 42. K.R. Kittilstved, W.K. Liu, D.R. Gamelin, Nat. Mater. 5, 291 297 (2006) 43. A. Kaminski, S.D. Sarma, Phys. Rev. Lett. 17, 247202 (2002) 44. J.E. Jaffe, T.C. Droubay, S.A. Chambers, J. Appl. Phys. 97, 073908 (2005) 45. H.M. Weng, X.P. Yang, J.M. Dong, H. Mizuseki, M. Kawasaki, Y. Kawazoe, Phys. Rev. B 69, 125219 (2004) 46. S. Ramachandran, A. Tiwari, J. Narayan, Appl. Phys. Lett. 84, 5255 (2004) 47. X.X. Liu, F.T. Lin, L.L. Sun, W.J. Cheng, X.M. Ma, W.Z. Shi, Appl. Phys. Lett. 88, 062508 (2006) 48. X.Y. Xu, C.B. Cao, Z. Chen, J. Magn. Magn. Mater. 323, 18861889 (2011)

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