AP4232GM

Pb Free Plating Product

Advanced Power Electronics Corp.

! Low On-Resistance ! Simple Drive Requirement ! Dual N MOSFET Package
D1 D2 D1 D2

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS RDS(ON) ID
G2 S2

30V 22m" 7.8A

SO-8

S1

G1

Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2

G1 S1

G2 S2

Absolute Maximum Ratings

Symbol VDS VGS ID@TA=25# ID@TA=70# IDM PD@TA=25# TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3

Rating 30 20 7.8 6.2 30 2 0.016 -55 to 150 -55 to 150

Units V V A A A W W/ # # #

Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range

Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3

Value Max. 62.5

Unit #/W

Data and specifications subject to change without notice

200112051

AP4232GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
$BVDSS/$Tj

Parameter Drain-Source Breakdown Voltage

Test Conditions VGS=0V, ID=250uA

2

Min. 30 1 -

Typ. 0.02 12 13 3 9 10 7 22 8 720 230 200 1.2

Max. Units 22 32 3 1 25 100 21 1150 1.8 V V/# m" m" V S uA uA nA nC nC nC ns ns ns ns pF pF pF "

Breakdown Voltage Temperature Coefficient Reference to 25#, ID=1mA

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=7A VGS=4.5V, ID=5A

VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg

Gate Threshold Voltage Forward Transconductance

Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o

VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=7A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3",VGS=10V RD=15" VGS=0V VDS=25V f=1.0MHz f=1.0MHz

Gate-Source Leakage Total Gate Charge

2

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2

Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2

Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V, dI/dt=100A/s

Min. -

Typ. 16 8

Max. Units 1.2 V ns nC

trr
Qrr

Reverse Recovery Time

Reverse Recovery Charge

Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 #/W when mounted on Min. copper pad.

AP4232GM
40 40

T A = 25 C
30

ID , Drain Current (A)

10V 7.0 V 5.0 V 4.5 V ID , Drain Current (A)

T A = 150 C

30

10V 7.0 V 5.0 V 4.5 V

20

20

10

10

V G = 3.0 V

V G = 3.0 V

0 0 1 2 3 4 5

0 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

30

1.6

ID=5A T A =25 # Normalized R DS(ON)

25

ID=7A V G =10V
1.3

RDS(ON) (m" )

20

1.0

15

0.7 2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V)

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature

2.0

1.5

Normalized VGS(th) (V)

1.2

IS(A)

1.0

T j =150 C
2

T j =25 C

0.5

0 0 0.2 0.4 0.6 0.8 1

0.0 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V)

T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

AP4232GM
f=1.0MHz
16 1000

ID=7A VGS , Gate to Source Voltage (V) C iss

12

C (pF)

V DS =15V V DS =20V V DS =24V

C oss
4

C rss

0 0 5 10 15 20 25 30

100 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC)

V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

Normalized Thermal Response (Rthja)

Duty factor=0.5

0.2

10

100us 1ms ID (A)

1

0.1

0.1

0.05

10ms 100ms

0.02

PDM t T
Single Pulse

0.01

0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135# /W

0.1

T A =25 o C Single Pulse

1s DC

0.01 0.1 1 10 100

0.001 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

30

V DS =5V ID , Drain Current (A) T j =25 o C

20

VG
T j =150 o C

QG 4.5V QGS QGD

10

Charge
0

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform