2SK2847

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSIII)

2SK2847
DCDC Converter and Motor Drive Applications
Unit: mm Low drainsource ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 1.1 (typ.) : |Yfs| = 7.0 S (typ.)
15.8 0.5
,

03.610.2

: IDSS = 100 A (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics Drainsource voltage Draingate voltage (RGS = 20 k) Gatesource voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 8 24 85 799 8 8.5 150 55~150 Unit
5 45 0,2
.

5 45 0.2
.

V V V A A W mJ A mJ C C
1
.

Pulse (Note 1)

GATE
DRAIN

Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

SOURCE

JEDEC JEITA TOSHIBA

2-16F1B

Weight: 5.8 g (typ.)

Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (chc) Rth (cha) Max 1.47 41.6 Unit C / W C / W

Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 22.9 mH, RG = 25 , IAR = 8 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

2004-07-06

2SK2847
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gatesource breakdown voltage Drain cutoff current Drainsource breakdown voltage Gate threshold voltage Drainsource ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turnon time Switching time Fall time Turnoff time Total gate charge (gatesource plus gatedrain) Gatesource charge Gatedrain (miller) Charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 8 A Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton
10V

Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 15 V, ID = 4 A

Min 30 900 2.0 3.0

Typ. 1.1 7.0 2040 45 190 25 60 20 95 58 32 26

Max 10 100 4.0 1.4

Unit A V A V V S

VDS = 25 V, VGS = 0 V, f = 1 MHz

pF

ID=4A
VOUT

n OV
o
.
-

4 70

000

ns

/n

oVdd
=400V

Duty

1%, tw = 10 s

nC

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 8 A, VGS = 0 V IDR = 8 A, VGS = 0 V dIDR / dt = 100 A / s Test Condition Min Typ. 1650 21 Max 8 24 1.9 Unit A A V ns C

Marking

TOSHIBA

K2847

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

2004-07-06

2SK2847

id - vos
COMMON SOURCE
20

id - Vds
0
55
.

Tc = 25C PULSE TEST

y
/
J
r
y

15>/l0
t

COMMON

SOURCE

Tc = 25C PULSE TEST

<

16

5 25
.

5
OS D U 47
.

55-

\/GS

= 4.5V

i
Q

o 4

1
8 12 16 20
40 80 120

VGS = 4V
160 200

DRAIN-SOURCE VOLTAGE

VDs

(V)

DRAIN-SOURCE VOLTAGE

VdS

(V)

id - vgs
20

vds - vqs
z

COMMON SOURCE

VDS = 50V
PULSE TEST
16

COMMON SOURCE Tc = 25<'C PULSE TEST

Q
>

16

00

12

<
o >
o

12

id = 8A

Di

IT c=-i

< K 3

10

12

16

20

GATE-SOURCE VOLTAGE

Vqs

(V)

GATE-SOURCE VOLTAGE

Vqs

(V)

|Yfs| - ID
30

Rdscon) - id
COMMON

COMMON SOURCE

SOURCE
Tr = 95n

Vds=50V
PULSE TEST
10

P ULSE

Tc=-55C

T EST

vg s
'
-

10

4ioo 2 -

15

a 2
05
.

Da 03
.

03
.

0.5

10

30

01 03
.
.

0.5

10

30

DRAIN CURRENT

ID

(A)

DRAIN CURRENT

Id

(A)

2004-07-06

2SK2847

RDS(ON) - Te
30

IDR - Vos
COMMON
&u

COMMON SOURCE

VGs = 10V
u

PULSE TEST

ID=

8A
t. a

10

Te = 25 c PL LSE TE T
-

z o z
t.

/
.
-

/i
3
O

M 9
OS Q

t
05
.

3
Z

>

>

in

f //
'
i

i
Q
-

03
.

1
01
.

'

/ )

/
-0.4

//

//

v( JS = ' 1

IV

80

-40

40

80

120

160

_0.2

-0.6

-0.8

-1.0

-1

CASE TEMPERATURE

Te

CC)

DRAIN-SOURCE VOLTAGE

VDs

(V)

CAPACITANCE - VDS
10000

Vth - Te
1
5
>
a

COMMON

SOURCE

VDS = 10V lD = lmA

PULSE TEST

o
>

3
o

COMMON SOURCE

ns

P
u
<

Vgs=0V
f=lMHz
Te = 25C

0 0 3 0.5
.

10

30

50

100

80

40

40

80

120

160

DRAIN-SOURCE VOLTAGE

Vds

(V)

CASE TEMPERATURE

Te

(C)

PD - Te

DYNAMIC INPUT/OUTPUT

CHARACTERISTICS

P
>

VDD = 100V
z

>

O <
c

I
o >

i
t
w

>

COMMON

5
o z

g
Z
<

SOURCE

lD = 8A
Tc = 250C

<

PULSE TEST

40

80

120

160

200

20

40

60

80

100

CASE TEMPERATURE

Te

(C)

TOTAL GATE CHARGE Qg (nC)

2004-07-06

2SK2847

rth - tw

Duty = 0.5
I

0 01
.

SINGLE FUI

Duty = t/T

0 005
.

Rth(ch-c) = l-C/W
Im lOm lOOm
10

PULSE WIDTH

(s)

SAFE OPERATING AREA

i i 11ii 1-r

EAS " Tch

1000

ID MAX. (PULSE) . ;
mu- In MAX. (CONTINUOUS)
<
'

800

i
600

i
3
05
.

DC

:,::.\TIOtf
Tc = 25C

\
200

<

SINGLE
Q

>

03
.

NONREPETITIVE PULSE Tc = 25C Curves must be derated

< o

0 1
.

iinearly with ncrease in

temperature.

VDSS
MAX.

26

50

75

100

126

150

0 05
.

ti
30 100 300 1000 3000

CHANNEL TEMPERATURE (INITIAL) Tch CC)

10

DRAIN-SOURCE VOLTAGE

VDs (V)

BVDSS
15V
-

r-i L
O-vw-

lAR

15V

VDD
m m

VDS

TV
WAVE FORM

TEST CIRCUIT

RG = 25 VDD = 90 V, L = 22.9 mH

E AS =

1 B VDSS L I2 2 B V DD VDSS

2004-07-06

2SK2847

RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

030619EAA

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

2004-07-06