1. A. B. C. D.

Unit 2 Cut in voltage of typical silicon transistors base emitter junction is 0.1V 0.2V 0.4V 0.6V

Ans:-D 2. A. B. C. D. A PNP transistor has Only acceptor ions Only donar ions Both Donar as well as acceptor ions None of above

Ans.:- C 3. A CE transistor configuration has voltage gain is A. B. C. D. High Unity Low Zero

Ans.:- A 4. A. B. C. D. A CE transistor configuration has current gain is low high unity Zero

Ans.:-B 5. A. B. C. D. A CE configuration gives phase shift between input and output as 0 90 180 360

Ans.:- C

6. If emitter base junction is forward biased and collector base junction is reverse biased then transistor is said to be operating in A. Cutoff region B. Active region C. Saturation region D. All of above Ans.:-B 7. Current amplification factor in CE configuration () is ratio of A. IB/IC B. IE/IC C. IC/IB D. IC/IE Ans.:-C 8. Current amplification factor in CB configuration () is ratio of A. IB/IC B. IE/IC C. IC/IB D. IC/IE Ans:-D 9. Current amplification factor in CC configuration (gamma) is ratio of A. IE/IB B. IE/IC C. IC/IB D. IC/IE Ans:-A 10. For a certain BJT = 50, IB = 25A and Ic= 1.2 mA then ICEO is equal to A. 0.3 microamperes B. 25 microamperes C. 3 microampere D. 30 microampere Ans:-C 11. If IB= 45A, Ic= 6 mA and ICBO= 15A what is the value of A. 0.099 B. 0.9 C. 0.99 D. 0.909 Ans:-C

12. For N- channel EMOSFET if VGS (TH) =3 V, Id (on) = 3 mA, VGS (on) = 10 V , then Kn will be A. 0.02 10-3 A / V2 B. 0.061 10-3 A / V2 C. 1 10-3 A / V2 D. 1.061 10-3 A / V2 Ans:-B 13. While handling MOSFET precaution is required because A. if it fall, it will break B. very high current flows through it C. static charges can break down the layer and establish conduction through it D. none of the above Ans:-C 14. MOSFET can be used as voltage variable resistor (VVR) in A. saturation region B. nonsaturation region C. cut-off region D. active region Ans:-B 15. What is the value of if is .9934? A. 155 B. 100 C. 15 D. 150.5 Ans.:-D 16. In a voltage amplifier, if emitter by pass capacitor is removed, A. the circuit will become unstable B. the Q-point will shift C. the voltage gain will decreases D. All of above Ans.:-D 17. In a self biased npn transistor, for R1 = 47kW, R2 = 10kW, RC = 4.7kW, RE = 940W and Vcc =10V. Determine the value of VE A. 2.45V B. 1.05V

C. OV D. None Ans:-B 18. In a self biased NPN transistor, for R1 = 47kW, R2 = 10kW, RC = 4.7kW, RE = 940W and Vcc =10V. Determine the value of IE A. 2.60mA B. 1.12mA C. 0MA D. 3mA Ans:-B 19. For impedance matching the transistor configuration used is, A. CE B. CC C. CB D. ALL Ans:-B 20. Voltage gain of CC configuration is, A. Approx. equal to 1 B. Greater than 1 C. Equal to zero D. None of the above. Ans:-A 21. The region of a transistor which has highest conductivity is A. Emitter B. Base C. Collector D. None Ans.:-A

22. Bipolar transistor is a A. Three junction semiconductor device B. Three layer semiconductor device. C. Four terminal device. D. None of the above. Ans.:-B 23. a capacitor offers ___________ reactance to dc A. infinite

B. finite C. 0.5 D. None Ans.:-A 24. How many terminals MOSFET have A. 2 B. 3 C. 4 D. 3 or 4 Ans.:-D 25. For making n channel enhancement type MOSFET substrate taken will be of type A. P B. N C. Either P or N D. None of these Ans.:-A 26. While handling MOSFET precaution is required because A. if it fall, it will break B. very high current flows through it C. static charges can break down the layer and establish conduction through it D. none of the above Ans.:-C 27. MOSFET can be used as voltage variable resistor (VVR) in A. saturation region B. nonsaturation region C. cut-off region D. active region Ans.:-B 28. What is the value of if is 0.9934? A. 155 B. 100 C. 15 D. 150.5 Ans.:-D 29. The DC load line of transistor circuit A. has a negative slope B. is curved line C. gives graphic relation between IC and IB

D. does not contain a Qpoint Ans.:-A

30. If VCE exceeds VCEmax in CB the collector junction will break down due to A. to the center of load line B. two third way up the load line C. towards the saturation point D. toward cutoff point Ans.:-C
31. If VCE exceeds VCEmax in CB the collector junction will break down due to

A. Avalanche breakdown B. Zener breakdown C. Punch through effect D. Early effect Ans.:-C 32. For properly biased transistor amplifier, VCC should be A. forward biased B. reverse biased C. about Vcc D. nearly equal to Vcc Ans.:- C 33. If =0.99, Ic= 6 mA and ICBO= 15A what is the value of IB A. 50 A B. 45 A C. 60 A D. 55 A Ans.:-B 34. If IE=12.02mA and IB= 20 A, IC= A. 10 mA B. 0.02 mA C. 12.02 mA D. 12 mA Ans.:-D 35. If IC=9 mA and IE= 9.01 mA, IB= A. 0. 1 mA B. 1 mA C. 10 A D. 100 A

Ans.:-C 36. An amplifier has a voltage gain of 100 the gain in dB will be A. 34 B. 40 C. 4 D. 45 Ans.:-B 37. Depletion region width is more in Base region then in Collector region because A. Base is least doped B. Collector is least doped C. doping level is same D. none Ans.:-A 38. N channel FETs are superior to P channel FETs because A. they have a higher switching time B. they have a higher input impedance C. mobility of electron is greater than that of holes D. all of the above Ans.:-C 39. A certain p- channel E-MOSFET has a VGS(TH) = -2 V. If VGS = 0 V, the drain current is A. Idss B. 0A C. ID(ON) D. Maximum Ans.:-B 40. At cutoff, the JFET channel is A. at its widest point B. completely closed by the depletion region C. extremely narrow D. reverse biased Ans.:-B 41. For VGS = 0V, the drain current becomes constant when VDS exceeds A. Cutoff B. VDD C. VP D. 0 Ans.:-C 42. For an n-channel EMOSFET , ID increases when

A. VGS > B. VGS < C. VGS = D. VGS = Ans.:-A

VT VT + VT - VT

43. IDSS is the A. zero gate voltage drain current B. zero drain voltage gate current C. zero source voltage drain current D. maximum drain to source current Ans.:-A 44. To plot Q point on DC load line in CE configuration, the parameters required are, A. VBEQ, IEQ B. VCEQ, ICQ C. VCEQ, IBQ D. VBEQ, IcQ Ans.:-B 45. In CE amplifier using NPN transistor, following modifications are required in circuit if NPN transistor is replaced by PNP transistor. A. R1 is replaced by R2 and vice versa B. RE is replaced by RC and vice versa C. VCC is replaced by VEE D. all of above Ans.:-D 46. Find maximum voltage gain, if voltage gain at cut-off frequency is 100 A. 70.7 B. 141.44 C. 0.00707 D. 100 Ans.:-B 47. In CE amplifier, the junction capacitor CBC and CBE are responsible for, A. reducing gain at low frequency B. reducing gain at high frequency C. increasing gain at mid frequency D. increasing gain at high frequency Ans.:-B

48. In CE amplifier, the capacitor C1, C2 and C3 are responsible for, A. reducing gain at low frequency B. reducing gain at high frequency C. increasing gain at mid frequency D. increasing gain at high frequency Ans.:-A 49. In CE amplifier, the relation between, frequency of output signal (fo) and frequency of input signal (fin) of an amplifier is, A. fo < fin B. fo > fin C. fo = fin D. None of above Ans.:-C 50. In CE amplifier, the voltage Vc is, A. Vcc + IcRc B. Vcc x IcRc C. Vcc-IcRc D. None of above Ans.:-C 51. is known as A. voltage gain B. current gain C. amplification gain D. none Ans.:-B 52. which among the below configuration is also called as current amp. A. CE B. CC C. CB D. All Ans.:-B 53. When BJT is used as a switch, and switch is said to be ON, then ideal VCE voltage is A. Vcc B. Infinity C. Zero D. None of above Ans.:-C 54. When BJT is used as a switch, and switch is said to be ON, then ideal VCE voltage is

E. Vcc F. Infinity G. Zero H. None of above Ans.:-A 55. In CE amplifier, gain of amplifier is low at, A. Low and High frequency regions B. Low and Mid frequency regions C. Mid frequency regions D. High and Mid frequency regions Ans.:-A 56. In CE amplifier, gain of amplifier is constant at, A. Low frequency region B. High frequency region C. Mid frequency region D. None of above Ans.:-C 57. In CE amplifier, what happens if output coupling capacitor C3 is removed, A. Output contains ac and dc B. Output contains ac only C. Output contains dc only D. No signal Ans.:-A 58. In CE amplifier, what happens if input coupling capacitor C1 is removed A. ac and dc signal will be amplified B. only ac signal will be amplified C. only dc signal will be amplified D. no signal will be amplified Ans.:-A 59. MOSFETs are classified as _________ A. Depletion MOSFET B. Enhancement MOSFET C. Both a & b D. None of the above Ans.:-C 60. MOSFET stands for _____________ A. Manganese oxide semiconductor field effect transistor

B. Metal oxide semi layer field effect transistor C. Metal oxide semiconductor field effect transistor D. Metal oxide semiconductor field effect transformer Ans.:-C 61. The value of VGS at which drain current ID reduces to zero is called A. Pinch off voltage B. Gate cut- off voltage C. Cut in voltage D. None of the above. Ans.:-B 62. The value of drain to source voltage VDS at which drain current ID becomes essentially constant is called as A. Pinch off voltage B. Gate cut- off voltage C. Cut in voltage D. None of the above Ans.:-A 63. DMOSFET is the abbreviation for A. Drain MOSFET B. Dynamic MOSFET C. Deflection MOSFET D. Depletion MOSFET Ans.:-D 64. In Ohmic region the drain current ( ID ) varies linearly with ________ A. Gate current IG B. Gate to source voltage ( VGS ) C. Drain to source voltage ( VDS ) D. None of the above. Ans.:65. EMOSFET is the abbreviation for A. Energetic type MOSFET B. Enhancement type MOSFET C. Enable type MOSFET D. None of the above. Ans.:- B 66. The main factor which differentiates a D-MOSFET and E-MOSFET is the absence of A. P-N Junction B. Insulated gate C. Electrons

D. Channel Ans.:-D 67. When the drain voltage equals the pinch off voltage then drain current ______ with the increase in drain voltage A. B. C. D. Increases Decreases Remains constant None of the above. Ans.:-C

68. MOSFET is sometimes called________ JFET A. Many gate B. open gate C. insulated gate D. shorted gate Ans.:-C

69. _________ is a semiconductor device commonly used to amplify or switch electronic signals. A. B. C. D. Diode Resistor Transistor None of the above Ans.:-C

70. Depending upon the polarity, BJT can be classified into A. NPN B. PNP C. Both a & b D. None of the above Ans.:-C 71. Emitter of the transistor is ________ doped. A. Heavily B. Lightly C. Moderately D. None of the above Ans.:-A 72. Base of the transistor is ________ doped. A. Heavily B. Lightly

C. Moderately D. None of the above Ans.:-B 73. Emitter doping level is ________ collector doping level A. Less than B. Equal to C. Greater than D. None of the above Ans.:-C 74. Among the following relation which one is correct in NPN transistor? A. IC = IB B. IB = IE + IC C. IE = IB + IC D. IC = IB + IE Ans.:-C 75. Among the following relation which one is correct in PNP transistor? A. IB = IE + IC B. IC = IB C. IC = IB + IE D. IE = IB + IC Ans.:-D 76. The input characteristics of CB configuration is plotted between ________ at constant VCB A. B. C. D. VBE & IE VCE & VBE IB & IE VCE & IE Ans.:-A

77. The output characteristics of CB configuration is plotted between ________ at constant IE . A. B. C. D. IB & IE VCE & VBE IC & VCB VCE & IE Ans.:-C

78. The input characteristics of CE configuration is plotted between ________ at constant VCE

A. B. C. D.

VBE & IB VBE & IB IB & IE VBE & IE Ans.:- A

79. The output characteristics of CE configuration is plotted between ________ at constant IB. A. B. C. D. IE & IC VCE & VBE IC & VBE VCE & IC Ans.:- D

80. BJT is ____________ operated device A. Current & Voltage B. Current C. Voltage D. None of the above Ans.:-B 81. BJT is a __________ device A. Unipolar B. Bipolar C. Tripolar D. None of the above Ans.:-B 82. For the purpose of amplification BJT has to be operated in _________ region A. B. C. D. Cut-off Saturation Ohmic Active Ans.:-D

83. The transistor has to operate in _________ region to act as switch. A. Cut-off B. Saturation C. Active D. Both a & b Ans.:-D 84. The transistor acts as a open switch( OFF ) in ________ region.

A. B. C. D.

Cut-off Saturation Ohmic Active Ans.:-A

85. The transistor acts as a close switch( ON ) in ________ region. A. Cut-off B. Saturation C. Ohmic D. Active Ans.:-B 86. For faithfull amplification, Q point of transister in an amplifier should be located at the _________ of the DC load line A. B. C. D. top end Center bottom Ans.:-C

87. _________is known as D.C. Current gain of the transistor for CE configuration A. B. C. D. dc dc dc dc Ans.:-C

88. Q point is also known as ________ point A. Quality B. Quiescent C. DC Operating D. both b & c Ans.:-D 89. The input current of BJT common base amplifier is A. IB B. IC C. IE D. both a & d Ans.:-C 90. The output current of BJT common base amplifier is

A. B. C. D.

IB IC IE both b & c Ans.:-B

91. The input current of BJT common emitter amplifier is A. IB B. IC C. IE D. both a & b Ans.:-A 92. The output current of BJT common emitter amplifier is A. IB B. IC C. IE D. both b & d Ans.:-B 93. The input current of BJT common collector amplifier is A. IB B. IC C. IE D. both c & d Ans.:-A 94. The output current of BJT common collector amplifier is A. IB B. IC C. IE D. both b & d Ans.:-C 95. Current gain in Common base amplifier is A. Very High B. High C. Less than unity D. None of the above Ans.:-C 96. Voltage gain in Common collector amplifier is A. Very High B. High C. Less than unity

D. None of the above Ans.:-C 97. input impedance of Common base amplifier is A. Very High B. Moderate C. Very Less D. None of the above Ans.:-C 98. Input impedance of Common collector amplifier is A. Very High B. Moderate C. Very Less D. None of the above Ans.:-A 99. Output impedance of Common collector amplifier is A. Very High B. Moderate C. Very Less D. None of the above Ans.:-C

100. Current amplification factor in common base configuration is given by A. dc = IC/ IE B. dc= IC/ IB C. dc = IE / IB D. None of the above Ans.:-A 101. Current amplification factor in common emitter configuration is given by A. dc = IC/ IE B. dc= IC/ IB C. dc = IE / IB D. None of the above Ans.:-B 102. In a BJT, highly doped semiconductor region is---A. Collector B. Base C. Emitter D. None of the above Ans.:-C

103. In which configuration current gain of transistor amplifier is lowest? A. Common base B. Common collector C. Common emitter D. None of the above Ans.:-A 104. In which configuration voltage gain of transistor amplifier is lowest? A. Common base B. Common collector C. Common emitter D. None of the above Ans.:-B By decreasing which of the following ICBO of a transistor can be decreased

105.

A. IE B. IB C. VCC D. None of above Ans.:-D 106. In a transistor if the base emitter junction is reverse biased, the collector current will Become ---------A. Zero B. Maximum C. Equal to IE D. Equal to ICBO Ans.:-D 107. The input resistance of the transistor when used in CB configuration is about---ohms

A. 12 B. 16 C. 30 D. 48 Ans.:-B 108. If the base-emitter junction is open, the collector voltage is

A. Vcc B. 0 V C. Floating

D. 0.2 Ans.:-B 109. Once in saturation, a further increase in the current will A. Cause the collector current to increase B. Cause the collector current to decrease C. Not affect the collector current D. Turn the transistor off Ans.:-B

110. ______________ is the best electronic device for fast switching. A. MOSFET B. JFET C. BJT D. Triode Ans.:-A 111. The DC of a transistor is its A. Current gain B. Voltage gain C. Power gain D. Internal resistance Ans.:-A

112. For operation as an amplifier, the base of an NPN transistor must be A. Positive with respect to the emitter i. B. Positive with respect to the collector C. Negative with respect to the emitter D. 0 V Ans.:-A 113. In a transistor highly doped part is---A. Collector B. Base C. Emitter D. None of above Ans.:-C 114. The configuration in which current gain of transistor amplifier is lowest is-----A. Common base B. Common collector

C. Common emitter D. None of the above Ans.:-A 115. The number of depletion layers in a transistor is------A. One B. Two C. Three D. Four Ans.:-B 116. A transistor is a ----------operated device A. current B. voltage C. both voltage & current D. none of the above Ans.:-A 117. The value of of a transistor is A. more than 1 B. less than 1 C. 1 D. none of the above Ans.:-B In a transistor, IC = 100mA & IE =100.5mA . The value of is A. 100 B. 50 C. about 1 D. 200 Ans.:-D

118.

119.

In a transistor if =100 & collector current is 10mA , then IE is------A. 100mA B. 110mA C. 100.1mA D. none of the above Ans.:-C

120.

The voltage gain of a transistor connected in common collector arrangement is A. equal to 1 B. more than 10

C. more than 100 D. less than 1 Ans.:-D 121. The phase difference between the input & output voltages in a common collector arrangement is---------A. 180 degree B. 90 degree C. 270 degree D. 0 degree Ans.:-D 122. The collector-base junction in a transistor has---A. forward bias at all times B. reverse bias at all times C. low resistance D. none of the above Ans.:-B The variations in causes A. bias un stability B. bias stability C. zero bias D. zero bias E. none Ans.:-A The range of frequencies over which the gain _______ is known as bandwidth A. increase B. decrease C. remains constant D. none Ans.:-C In the midband range of operating frequencies coupling and bypass capacitors act A. short circuit B. open circuit C. none D. neither a or b Ans.:-A 126. Bandwidth is given by A. (fH -fL)/2

123.

124.

125. as

B. fH + fL C. (fH +fL)/2 D. fH -fL Ans.:-D 127. If the value of is 0.9,then value of is A. 9 B. 0.9 C. 900 D. 90 Ans.:-D Which terminal represents the control input of a bipolar transistor A. emitter B. collector C. base D. gate Ans.:-C

128.

129. MOSFET is sometimes called________ JFET A. Many gate B. open gate C. insulated gate D. shorted gate Ans.:-C

130. A MOSFET uses electric field of a ________ to control the channel current A. capacitor B. Battery C. Generator D. None Ans:-A 131. A. 5 V B. 0.6V C. 15 V D. 20 V Ans.:-A The pinch off voltage of a JFET is about ________

132. For VGS = 0 V drain current becomes constant , when VDS exceeds ___ A. Cut off

B. VDD C. Vp D. 0 V Ans.:-C 133. CE configuration is most preferred transistor configuration for digital circuit because A. it requires only one power supply voltage B. it requires low voltage or current for operating the switch C. it is easily understood by every one D. it has small ICEO Ans.:-B 134. N-P-N transistors are preffered over P-N-P transistors for digital circuits because A. they require positive supply voltage B. they consume less power C. of the requirements of positive logic system D. the mobility of electrons is higher than the mobility of holed Ans.:-D 135. A BJT used as a switch, switches between

A. cutoff and active regions B. cutoff and saturation region C. active and saturation regions D. different operating points in the active regions Ans.:-B 136. The most commanly used configuration of a transistor as a switch is A. CB B. CC C. CE D. CB or CC Ans.:-C