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4. MOS Technology
a. MOSFET As Basic IC Component , b. Comparison Of MOSET With BJT as IC Component, c. MOS Isolation Techniques, Poly-Silicon Gate Technology, d. Self Aligned Gate Technology, NMOS Process Sequence, e. NMOS Inverter, Pass Transistor and Gates; f. N- Tub, P-Tub and Twin- Tub CMOS Structure;
g. a. b. c. d. e. f. a. b. c. d. e. f. g.
CMOS- Process Sequence Scaling Theory And Device Miniaturization, E Beam Masks, Plasma Etching , Choice of Photo Resists ; Stick, Sticks Diagram, VLSI Design Rules and Layout Diagrams, Computer Aids. Inverter Delays, Driving Large Capacitive Loads, Propagation Delays And Effects of Wiring Capacitances; Pull Up and Down Ration of NMOS and CMOS Inverter , Alternative Forms of Pull Up, NMOS and CMOS Inverter Transfer Characteristics, CMOS Gates.
4. MOS Technology
a. MOSFET As Basic IC Component , b. Comparison Of MOSET With BJT as IC Component, c. MOS Isolation Techniques, Poly-Silicon Gate Technology, d. Self Aligned Gate Technology, NMOS Process Sequence, e. NMOS Inverter, Pass Transistor and Gates; f. N- Tub, P-Tub and Twin- Tub CMOS Structure; g. CMOS- Process Sequence
a. b. c. d. e. f. g.
Inverter Delays, Driving Large Capacitive Loads, Propagation Delays And Effects of Wiring Capacitances; Pull Up and Down Ration of NMOS and CMOS Inverter , Alternative Forms of Pull Up, NMOS and CMOS Inverter Transfer Characteristics, CMOS Gates.
Si-substrate (a)