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AP2761I-A

Pb Free Plating Product

Advanced Power Electronics Corp.


Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant G S D

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS RDS(ON) ID

650V 1.0 10A

Description

AP2761 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast G D switching,ruggedized design and cost-effectiveness. S

TO-220CFM(I)

Absolute Maximum Ratings


Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1

Rating 650 30 10 6.4 36 37 0.3 65 10 -55 to 150 -55 to 150

Units V V A A A W W/ mJ A

Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range

Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 65 Units /W /W

Data & specifications subject to change without notice

200706053-1/4

AP2761I-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj

Parameter Drain-Source Breakdown Voltage

Test Conditions VGS=0V, ID=1mA

Min. 650 2 -

Typ. 0.6 4.8 53 10 15 16 20 82 36 2770 320 8

Max. Units 1 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF

Breakdown Voltage Temperature Coefficient Reference to 25 , ID=1mA

RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss

Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance


Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C)
o

VGS=10V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=10A VDS=520V VGS=10V VDD=320V ID=10A RG=10,VGS=10V RD=32 VGS=0V VDS=15V f=1.0MHz

Gate-Source Leakage Total Gate Charge


3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3

Source-Drain Diode
Symbol VSD trr Qrr Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25 , IAS=10A. 3.Pulse width <300us , duty cycle <2%.
o

Parameter Forward On Voltage


3

Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/s

Min. -

Typ. 610 8.64

Max. Units 1.5 V ns C

Reverse Recovery Time

Reverse Recovery Charge

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AP2761I-A
14

12

T C =25 C ID , Drain Current (A)


10

10V 6.0V ID , Drain Current (A)

T C =150 o C
6

10V 5.0V

4.5V
4

5.0V
4

V G =4.0V

V G =4.0V
0

0 0 5 10 15 20 25 0 5 10 15 20 25

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1.2

2.8

2.4

I D =5A V G =10V

Normalized BVDSS (V)

1.1

Normalized RDS(ON)

1.6

1.2

0.8 0.9

0.4

0.8 -50 0 50 100 150

0 -50 0 50 100 150

T j , Junction Temperature ( C)

T j , Junction Temperature ( o C )

Fig 3. Normalized BVDSS v.s. Junction Temperature


100 5

Fig 4. Normalized On-Resistance v.s. Junction Temperature

4 10

IS (A)

VGS(th) (V)

T j = 150 o C

T j = 25 o C

0.1 1

0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5

0 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V)

T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature


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AP2761I-A
16
10000

f=1.0MHz

I D =10A VGS , Gate to Source Voltage (V) C iss


12

C (pF)

V DS =330V V DS =410V V DS =520V


8

C oss
100

C rss
0
0 10 20 30 40 50 60 70 80 1

13

17

21

25

29

Q G , Total Gate Charge (nC)

V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

Duty factor=0.5

10

Normalized Thermal Response (Rthjc)

0.2

ID (A)

1ms 10ms 100ms 1s DC

0.1

0.1
0.05

0.02

PDM

t
0.01

0.1

T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C

T c =25 o C Single Pulse


0.01 0.1 1 10 100

Single Pulse

0.01

1000

10000

0.00001

0.0001

0.001

0.01

0.1

10

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

VDS 90%

VG QG 10V QGS QGD

10% VGS td(on) tr td(off) t


f

Charge

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

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