EE-612: Lecture 5 MOSFET IV: Part 1

Mark Lundstrom Electrical and Computer Engineering Purdue University West Lafayette, IN USA Fall 2008 NCN
www.nanohub.org
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outline

1) Introduction 2) Square law theory 3) PN junction effects on MOSFETs 4) Bulk charge theory (exact) 5) Summary

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typical Si NMOS characteristics

VGS

(Courtesy, Shuji Ikeda, ATDF, Dec. 2007)

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MOSFET IV: summary

linear region: VDS << VDSAT
W ID = eff Cox (VGS VT )VDS L

saturated region: VDS > VDSAT W 2 ID = eff Cox (VGS VT ) 2L I D = W Cox sat (VGS VT ) VDS = VGS VT VDS > VDSAT

See: A Review of MOSFET Fundamentals, M. Lundstrom, http://nanohub.edu/resources/5307

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I-V formulation
0 VG ID VD
I D = W QI (y ) y ( y ) Amperes

y
x
to include diffusion:
dV dFn dy dy

dV I D = W QI (y ) eff dy
I D dy = W QI V eff dV

()

W I D = eff L

VDS

Q (V )dV
I 0

Lundstrom EE-612 F08

outline

1) Introduction 2) Square law theory 3) PN junction effects on MOSFETs 4) Bulk charge theory (exact) 5) Summary

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gradual channel approximation

for 0 y L

VG

VD

V = V ( y)
V (0) = 0 V ( L ) = VD

QI = QI ( y )
1D MOS-C: QI = Cox (VG VT )

y
x
VG VT > 0

GCA : E y << E x VT VT (y ) = VT + V (y ) QI ( y ) = Cox [VG VT V ( y )]

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(subthreshold current will require a separate treatment)Lundstrom EE-612 F08

IV relation
0 VG VD
W I D = eff L
VDS

Q (V ) dV
I

W I D = + eff Cox L

VD

[V
0

VT V ]dV

y
x
2 W VDS I D = + eff Cox (VGS VT )VDS 2 L

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pinch-off
0 VG VD
QI ( L ) = Cox [VG VT VD ]
when VD = VG VT , then Qi ( L ) = 0
E y >> E x GCA fails!

y
x
but current still flows!

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pinch off in a MOSFET

The electron velocity is very high in the pinch-off region. High velocity implies low inversion layer density (because ID is constant). In the textbook model, we say Qi 0, but it is not really zero - just very small.

EC (eV) --->

Increasing VDS Increasing VDS

ballistic simulation -5 0 5

X (nm) ---> pinch-off point: where the electric field along the channel becomes very large. Note that electrons are simply swept across the high-field (pinched-off) portion Lundstrom at very high velocity. EE-612 F08 10

beyond pinch-off
0 VG VD
2 W VDS I D = + eff Cox (VGS VT )VDS 2 L

V (x ) = (VGS VT )

I D I D (VDS = VGS VT )

y
x
L L

W 2 I D = + eff Cox (VGS VT ) 2 L VGS > VT VDS > VGS VT

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the electric field

small VDS
W I D = eff Cox (VGS VT )VDS L

large VDS
W 2 I D = eff Cox (VGS VT ) 2L

I D = WCox (VGS VT ) eff E y (0)

VDS E y (0) = L

I D = WCox (VGS VT ) eff E y (0)

VGS VT ) ( E (0) =
y

2L

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outline

1) Introduction 2) Square law theory 3) PN junction effects on MOSFETs 4) Bulk charge theory (exact) 5) Summary

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energy band diagram along the channel

0 VG 0

y
x
VG = VT , S = 2 B qVbi EC ( y ) E = q (Vbi 2 B ) = k BT ln( N D N A ) 0.1 eV
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VG > VFB , S > 0

EF
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effect of a reverse bias

VR > 0

VG

VR > 0

y
x

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effect of a reverse bias

VG = VFB , S = 0

qVbi + VR

Fp = EF VG = VT , S = 2 B + VR VR
EC ( y ) Fn = EF qVR

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effect of a reverse bias

VR > 0

VG

VR > 0

y
x

now look at EC vs. x

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effect of a reverse bias

EC ( x )

q S = q (2 B + VR ) qVR

Fp EV ( x ) Fn

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effect of a reverse bias

no reverse bias:

VT = VFB + 2 B + 2 q Si N A (2 B ) Cox
with reverse bias (VG at onset of inversion):

VG = VFB + 2 B + VR + 2 q Si N A (2 B + VR ) Cox
VT of the MOSFET is defined as VGS at the onset of inversion

VT = VG VR = VFB + 2 B + 2 q Si N A (2 B + VR ) Cox
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back to the MOSFET

VS = 0

VG

VD > 0

Fn = Fp = EF

Fn = Fp qVD

Fn increasingly negative from source to drain (reverse bias increases from source to drain)
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back to MOSFET I-V

0 VG VD
QI ( y ) = Cox [VG VT ( y )]

Qi ( y )

y
x
bulk charge

VT ( y ) = VFB + 2 B + V (y ) + 2 q Si N A [2 B + V ( y)] Cox

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relation to square law

0 VG VD
QI ( y ) = Cox [VG VT ( y )] QI ( y ) = Cox [VG VT V ( y )]
Qi ( y )

(square law)

y
VT ( y) = VFB + 2 B + V (y ) + 2 q Si N A [2 B + V ( y )] Cox VT ( y ) VFB + 2 B + V (y ) + 2 q Si N A (2 B ) Cox = VT (0 ) + V (y )
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effect of a reverse bias

WD

WDM
VGS > VT

VBI

2 B

Gated doped or p-MOS with adjacent n+ region a) gate biased at flat-band b) gate biased in inversion A. Grove, Physics of Semiconductor Devices, 1967.

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effect of a reverse bias

WD WDM VGS > VT (VR )

VR

VR

VR

VBI + VR

S = 2 B + VR

Gated doped or p-MOS with adjacent, reverse-biased n+ region a) gate biased at flat-band b) gate biased in depletion b) gate biased in inversion A. Grove, Physics of Semiconductor Devices, 1967. Lundstrom EE-612 F08

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the MOSFET
(a)
2D e-band diagram for an n-MOSFET
a) device

(b) (c)

b) equilibrium (flat band) c) equilibrium (S > 0) d) non-equilibrium with VG and VD >0 applied SM. Sze, Physics of Semiconductor Devices, 1981 and Pao and Sah.

(d)

FN
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outline

1) Introduction 2) Square law theory 3) PN junction effects on MOSFETs 4) Bulk charge theory (exact) 5) Summary

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I-V formulation
I D = W QI (y ) y ( y )

VG

ID

VD

W I D = eff L

VDS

Q (V )dV
I
0

y
x

QI ( y ) = Cox [VG VT ( y )]

VT ( y) = VFB + 2 B + V ( y) QD (V ) Cox
VT ( y ) = VFB + 2 B + V ( y) + 2 q Si N A (2 B + V ( y)) Cox
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IV relation
W I D = eff L
VDS

Q (V ) dV
I
0

(1)

2 q Si N A (2 B + V ( y )) QI ( y ) = Cox VG VFB 2 B V (y ) (2) Cox

Insert (2) in (1) and integrate, find eqn. (3.18) of Taur and Ning, but 3/2 powers are inconvenient. (See Pierret, for a more extended discussion of the bulk charge theory.)
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can we approximate QD ?
QD (V ) = 2 q Si N A (2 B + V )
can we use a linear approximation for QD?

QD (V )
QD (0) = 2 q Si N A (2 B )

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outline

1) Introduction 2) Square law theory 3) PN junction effects on MOSFETs 4) Bulk charge theory (exact) 5) Summary

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MOSFET IV approaches
W I D = eff L
VDS

Q (V )dV
I
0

1) exact (Pao-Sah or Pierret-Shields)

see p. 117 Taur and Ning
QI (V ) = Cox [VG VT V )]
2 q Si N A (2 B + V ) QI (V ) = Cox VG VFB 2 B V C ox

2) Square Law 3) Bulk Charge

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MOSFET IV approaches
In practice, a simplified bulk charge theory (to be discussed in Part II) is typically used. But none of these theories describe modern short channel MOSFETs, for this ID ~ (VGS - VT) in the beyond pinch-off region. For that, we need to consider velocity saturation, which is also discussed in Part II of this lecture.

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suggested reference
For a thorough treatment of MOSFET theory, see: Yannis Tsividis, Operation and Modeling of the MOS Transistor, 2nd Edition, WCB McGraw-Hill, Boston, 1999. especially Chapters 3 and 4

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