SRFET

TM

AO4712 N-Channel Enhancement Mode Field Effect Transistor

TM

General Description
SRFET The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4712 is Pb-free (meets ROHS & Sony 259 specifications).

Features
VDS (V) = 30V ID =11.2A (VGS = 10V) RDS(ON) < 14.5m (VGS = 10V) RDS(ON) < 18m (VGS = 4.5V)

UIS TESTED! Rg,Ciss,Coss,Crss Tested

D S S S G D D D D

G S

SRFET

TM

Soft Recovery MOSFET: Integrated Schottky Diode

Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B Avalanche Current
B

Maximum 30 12 11.2 9.1 60 16 38 3.1 2.0 -55 to 150

Units V V A

TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25C

A mJ W C

Repetitive avalanche energy L=0.3mH B Power Dissipation TA=70C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 32 60 17

Max 40 75 24

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

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AO4712

Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=11.2A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=1mA, VGS=0V VDS=30V, V GS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250 A VGS=10V, V DS=5V VGS=10V, ID=11.2A TJ=125C 1.5 60 12 19 15 64 0.38 0.5 4.5 1450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.8 18 VGS=10V, V DS=15V, ID=11.2A 9 224 92 1.6 24.0 12.0 3.9 4.2 5.5 VGS=10V, V DS=15V, R L=1.2, RGEN=3 IF=11.2A, dI/dt=300A/ s IF=11.2A, dI/dt=300A/ s 4.7 24.0 4.0 10 6.8 12 130 3.0 31 16 1885 14.5 24 18 1.8 Min 30 0.1 10 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev2: Dec 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 80 60 ID(A) 15 10 20 0 0 1 2 3 4 5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 Normalized On-Resistance VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 30 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=10A ID=11.2A VGS=10V VGS=3V 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 40 3.5V 10V 4.5V ID (A) 6V 4V 30 25 20 VDS=5V

25C

DYNAMIC
20

17 RDS(ON) (m )

14

11

VGS=10V

8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 45 40 35 RDS(ON) (m ) 125C IS (A) 30 25 20 15 10 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E-03 1.0E-04 ID=11.2A

1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 25C 125C

Alpha & Omega Semiconductor, Ltd.

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AO4712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 2500 2000 Capacitance (pF) 1500 1000 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Coss

VDS=15V ID=11.2A

Ciss

DYNAMIC PARAMETERS
100.0

10s 10.0 ID (Amps) RDS(ON) limited 10ms TJ(Max)=150C TA=25C 1ms 100 s Power (W)

100 90 80 70 60 50 40 30 20 10 TJ(Max)=150C TA=25C

1.0

DC

0.1

0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100

0 0.0001

0.001

0.01

0.1

10

100

Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1

0.1 D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=40C/W 0.001 0.01 0.1 1 PD Ton T 100 1000

0.01 Single Pulse 0.001 0.00001 0.0001

10

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

Alpha & Omega Semiconductor, Ltd.

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AO4712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01 1.0E-02 VDS=24V IR (A) 1.0E-03 VSD(V) VDS=12V 1.0E-04 1.0E-05 1.0E-06 100 150 200 Temperature (C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 12 di/dt=800A/us 125C 10 8 25C Qrr Irm 125C 25C Irm (A) trr (ns) 6 4 2 0 0 5 10 15 20 25 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 20 Qrr (nC) 15 10 5 0 0 Qrr Irm 200 400 600 800 10 8 125C trr (ns) 25C 125 Irm (A) 6 4 2 0 1000 15 125C 12 25C 9 trr 6 3 0 0 200 400 600 800 25C 125C S 1 0.5 0 1000 1.5 S Is=20A 2 12 10 8 trr 6 4 2 0 0 5 10 15 S 125C 20 25 30 25C di/dt=800A/us 125C 0 50 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 3 2.5 2 1.5 1 0.5 0 50 IS=1A 10A 5A 20A

DYNAMIC
30 25 20 Qrr (nC) 15 10 5 0

25C

Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current

2.5

Is=20A

25C

di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt

di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com