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TO-220

MT2

MT1

Quadrac
Internally Triggered Triacs (4 A to 15 A)
E3

RoHS

General Description
Teccors Quadrac devices are triacs that include a diac trigger mounted inside the same package. This device, developed by Teccor, saves the user the expense and assembly time of buying a discrete diac and assembling in conjunction with a gated triac. Also, the alternistor Quadrac device (QxxxxLTH) eliminates the need for a snubber network. The Quadrac device is a bidirectional AC switch and is gate controlled for either polarity of main terminal voltage. Its primary purpose is for AC switching and phase control applications such as speed controls, temperature modulation controls, and lighting controls where noise immunity is required. Triac current capacities range from 4 A to 15 A with voltage ranges from 200 V to 600 V. Quadrac devices are available in the TO-220 package. The TO-220 package is electrically isolated to 2500 V rms from the leads to mounting surface. 4000 V rms is available on special order. This means that no external isolation is required, thus eliminating the need for separate insulators and insulator-mounting steps and saving dollars over hot tab devices. All Teccor triac and diac chips have glass-passivated junctions to ensure long-term device reliability and parameter stability. Variations of devices in this data sheet are available for custom design applications. Consult the factory for more information.

Features
RoHS Compliant Glass-passivated junctions Electrically-isolated package Internal trigger diac High surge capability up to 200 A High voltage capability 200 V to 600 V

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Quadrac

Data Sheets

Part No. IT(RMS)

(5) Isolated

Trigger Diac Specifications (TMT1) VDRM

(1)

IDRM
(1) (10)

VTM
(1) (3)

VBO (7)

VBO (6)

[V ] (6)

IBO

CT (11)

MT1

T MT2

mAmps Volts MIN 200 400 600 200 400 600 400 600 200 400 600 400 600 200 400 600 400 600 200 400 600 400 600 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 TC = 25 C TC = 100 C MAX 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 TC = 125 C

Volts TC = 25 C MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 Volts MAX 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 Volts MIN 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 MAX 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 Volts MIN 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Amps MAX 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 Farads MAX 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1

TO-220 See Package Dimensions section for variations. (12)

4A

Q2004LT Q4004LT Q6004LT Q2006LT Q4006LT

6A

Q6006LT Q4006LTH Q6006LTH Q2008LT Q4008LT

8A

Q6008LT Q4008LTH Q6008LTH Q2010LT Q4010LT

10 A

Q6010LT Q4010LTH Q6010LTH Q2015LT Q4015LT

15 A

Q6015LT Q4015LTH Q6015LTH

Specific Test Conditions

[V] Dynamic breakback voltage (forward and reverse) VBO Breakover voltage symmetry CT Trigger firing capacitance di/dt Maximum rate-of-change of on-state current dv/dt Critical rate-of-rise of off-state voltage at rated VDRM gate open dv/dt(c) Critical rate-of-rise of commutation voltage at rated VDRM and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate unenergized I2t RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IBO Peak breakover current IDRM Peak off-state current gate open; VDRM = maximum rated value IGTM Peak gate trigger current (10 s Max) IH Holding current; gate open IT(RMS) RMS on-state current, conduction angle of 360 ITSM Peak one-cycle surge tgt Gate controlled turn-on time VBO Breakover voltage (forward and reverse)

VDRM Repetitive peak blocking voltage VTM Peak on-state voltage at maximum rated RMS current

General Notes
All measurements are made at 60 Hz with resistive load at an ambient temperature of +25 C unless otherwise specified. Operating temperature range (TJ) is -40 C to +125 C. Storage temperature range (TS) is -40 C to +125 C. Lead solder temperature is a maximum of +230 C for 10 seconds maximum; 1/16" (1.59 mm) from case. The case temperature (TC) is measured as shown on dimensional outline drawings. See Package Dimensions section of this catalog.

Electrical Specification Notes

(1) (2) (3) (4) For either polarity of MT2 with reference to MT1 See Figure E3.1 for IH versus TC. See Figure E3.4 and Figure E3.5 for iT versus vT. See Figure E3.9 for surge ratings with specific durations.

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Data Sheets

Quadrac

IH
(1) (2)

ITSM
(4) (8)

dv/dt(c)
(1) (5) (8)

dv/dt
(1)

tgt
(6) (9)

I2 t

IGTM

di/dt
(9)

Volts/Sec mAmps MAX 40 40 40 50 50 50 50 50 60 60 60 60 60 60 60 60 60 60 70 70 70 70 70 Amps 60/50Hz 55/46 55/46 55/46 80/65 80/65 80/65 80/65 80/65 100/83 100/83 100/83 100/83 100/83 120/100 120/100 120/100 120/100 120/100 200/167 200/167 200/167 200/167 200/167 Volts/Sec MIN 3 3 3 4 4 4 25 25 4 4 4 25 25 4 4 4 30 30 4 4 4 30 30 75 75 50 150 150 125 575 425 175 175 150 575 425 200 200 175 925 775 300 300 200 925 775 TC = TC = 100 C 125 C MIN 50 50 50 100 100 85 450 350 120 120 100 450 350 150 150 120 700 600 200 200 150 700 600 Sec TYP 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 12.5 12.5 12.5 26.5 26.5 26.5 26.5 26.5 41 41 41 41 41 60 60 60 60 60 166 166 166 166 166 1.2 1.2 1.2 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 50 50 50 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 100 100 100 100 100 Amps2Sec Amps Amps/Sec

See Figure E3.6, Figure E3.7, and Figure E3.8 for current rating at specific operating temperature. (6) See Figure E3.2 and Figure E3.3 for test circuit. (7) VBO = [+ VBO] - [- VBO] (8) See Figure E3.7 and Figure E3.8 for maximum allowable case temperature at maximum rated current. (9) Trigger firing capacitance = 0.1 F with 0.1 s rise time (10) TC = TJ for test conditions in off state (11) Maximum required value to ensure sufficient gate current (12) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number.

(5)

Electrical Isolation
All Teccor isolated Quadrac packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.
Electrical Isolation from Leads to Mounting Tab *
V AC RMS 2500 4000 TYPE Standard Optional **

* UL Recognized File #E71639 **For 4000 V isolation, use V suffix in part number.

Thermal Resistance (Steady State) RJC [RJA] C/W (TYP)

TYPE 4A 6A 8A 10 A 15 A Isolated TO-220 3.6 [50] 3.3 2.8 2.6 2.1

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Quadrac

Data Sheets

20

Positive or Negative Instantaneous On-state Current (iT) Amps

18

2.0 INITIAL ON-STATE CURRENT = 200 mA DC 4 A to 10 A = 400 mA DC 15 A

TC = 25 C
16 14

IH(TC = 25 C)

1.5

6 A, 8 A, and 10 A
12 10 8 6 4

IH

1.0

Ratio of

.5

4A
2 0

0 -40 -15 +25 +65 +105 +125

Case Temperature (TC) C

0.6

0.8

1.0

1.2

1.4

1.6

Positive or Negative Instantaneous On-state Voltage (vT) Volts

Figure E3.1 Normalized DC Holding Current versus Case Temperature

Figure E3.4 On-state Current versus On-state Voltage (Typical) (4 A to 10 A)

Positive or Negative Instantaneous On-state Current (iT) Amps

90 80

RL

TC = 25C
70 60 50

D.U.T.

MT2

15 A
40 30 20 10 0 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8

120 V 60 Hz T

VC CT = 0.1 F

MT1

Positive or Negative Instantaneous On-state Voltage (vT) Volts

Figure E3.2 Test Circuit

Figure E3.5 On-state Current versus On-state Voltage (Typical) (15 A)

120

VC +VBO V+

Maximum Allowable Ambient Temperature (TA) C

100

4A
80

60

40

V-VBO

25 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

RMS On-state Current [IT(RMS)] Amps

Figure E3.3 Test Circuit Waveforms

Figure E3.6 Maximum Allowable Ambient Temperature versus On-state Current

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Data Sheets

Quadrac

120

110

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawings

Average On-state Power Dissipation [PD(AV)] Watts

130

4.0

Maximum Allowable Case Temperature (TC) C

3.0 4A

100

4A
90

2.0

80

70

1.0

60 0

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

0 0 1.0 2.0 3.0 4.0 5.0

.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

RMS On-state Current [IT(RMS)] Amps

RMS On-state Current [IT(RMS)] Amps

Figure E3.7 Maximum Allowable Case Temperature versus On-state Current (4 A)

Figure E3.10 Power Dissipation (Typical) versus On-state Current (4 A)

18

120

110

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawings

Average On-state Power Dissipation [PD(AV)] Watts

130

Maximum Allowable Case Temperature (TC) C

16

14

12

100 6A

15 A

10

15 A 6 A to 10 A

90

80

8A

10 A

70

60

0 0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

0 2 4 6 8 10 12 14 16

RMS On-state Current [IT(RMS)] Amps

RMS On-state Current [IT(RMS)] Amps

Figure E3.8 Maximum Allowable Case Temperature versus On-state Current (6 A to 15 A)

Figure E3.11 Power Dissipation (Typical) versus On-state Current (6 A to 10 A and 15 A)

200 120 100 80 60 50 40 30 20

Percentage of VBO Change %

Peak Surge (Non-repetitive) On-state Current (ITSM) Amps

NOTES: 1) Gates control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady state rated value.

+4 +2 0 -2 -4 -6 -8 -40 -20 0 +20 +40 +60 +80 +100 +120 +140

15 A 10 A

10 8 6 5 4 3 2
SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [IT(RMS)]: Maximum Rated Value at Specified Case Temperature

8A 6A
4A

1 1 2 3 4 5 6 8 10 20 3040 60 80 100 200 300 600 1000

Surge Current Duration Full Cycles

Junction Temperature (TJ) C

Figure E3.12 Normalized diac VBO versus Junction Temperature

Figure E3.9 Peak Surge Current versus Surge Current Duration

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Notes

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