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Fuji Smart power device M-POWER2 for Multi-oscillated current resonant type power supply
Summary
System: The ideal and Fujis original system Itincludes many functions(Soft-switching,stand-by). Device Multiple-chipPowerDeviceM-POWER2 contains IC and two MOSFETs in SIP-13pin package. M-POWER has various types of protection functions.
MT5F11478c July.25.2002
Features
1. High efficiency (a reduction in SMPS size is possible.) DC/DC : 92.3%(DC input:400V,output:16V) PFC+DC/DC :87.0%(AC100V),89.5%(AC200V)
2. Built in stand-by mode (An auxiliary power supply is unnecessary.) Pin<0.4W at Pout=0.0W Pin<1.0W at Pout=0.5W Pin<4.0W at Pout=2.0W 3. Low noise (a reduction in the noise suppression parts is possible.) MOSFETs Turn-on : ZVS+ZCS Turn-off : ZVS Diodes(secondary side) Surge voltage does not occur at reverse recovery.
4. Fail-safety (Built in protection functions:OC,SC,OV,Tj(OH)) 5. Easy design power supply (Reduction of design time)
Circuit configuration
Q2
VQ2
M-POWER2
IQ1 Ed VG2
VP1
PWM
Q1
VD2,ID2 VQ1
VG1 V
MT5F11478c July.25.2002
Cr
VP1
Q2
Tr
VD1,ID1
VP2VG2 VG2
Vth(Q2)
Ed
PWM IQ1
VG1
Q1
VQ1
VD2,ID2
VQ2 VQ1,VQ2
Feedback voltage
VQ1
0 IQ1
Normal / Stand-by signal
IQ2
Features of the Multi-oscillation 1) No arm-short circuit. 2) it is high efficiency at light load too.
ID1 ID1,ID2 0
ID2
MT5F11478c July.25.2002
Efficiency comparison
PFM V.S. M-POWER2(Muiti oscillation)
AC200V 95 90
Vo=15V 15V With PFC PFC
PFM M-POWER2
Efficiency[%] [%]
MT5F11478c July.25.2002
surge voltage
VD1
0 0 IQ2
D1
0
ID1
ZVS
ZVS+ZCS
VD2
D2
0 ID2
ZVS
ZVS+ZCS
VQ1 500V /DIV IQ1 1A /DIV VQ2 500V /DIV IQ2 1A /DIV 5us/DIV
DC/DC
Efficiency (%)
90
AC200V AC100V
80
70 0 20 40 60 80 100
Output (W)
Performance
Power saving operation
VCS 0
2V/div
0.8A/div 0 IP1
IP1
2ms/div
500s/div
Condition:AC100V,Pout=0.5W
Condition:AC240V,Pout=0.5W
MT5F11478c July.25.2002
Characteristic
4.0 3.5 3.0
Input:Pin [W]
2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 Output:Po [W] 2.0 2.5
MT5F11478c July.25.2002
M-POWER2
Type name F9221L F9222L Main-MOSFET V DS 500V 500V R DS(ON) 0.9 0.6 Sub-MOSFET V DS 500V 500V Control IC T j(OH) 125 150 125 150 R DS(ON) V CC(ON) 0.9 0.6 16.5V 16.5V Sam ple M/P 02/09
PKGH:10.2mmW:31.0mmT:3.5mm
10
Unit:mm
MT5F11478c July.25.2002