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Web Site: www.ijettcs.org Email: editor@ijettcs.org, editorijettcs@gmail.com Volume 2, Issue 2, March April 2013 ISSN 2278-6856
Optimization and Simulation of Two Stage Operational Amplifier Using 180nm and 250nm Technology
Haresh S. Chaudhari1, Nilesh D. Patel2 and Jaydip H. Chaudhari3
1,3
PG Student, Gujarat Technology University, Electronics and Communication, LCIT-Bhandu, Mehsana, Gujarat, India
2
Abstract:
As the CMOS process entering the nanometer scale analog circuit will need to operate in lower and lower supply voltage. This trend is primarily driven by the need to low power and low voltage requirement on the consumer electronics market. High gain enables the circuit to operate efficiently in a closed loop feedback system. The design is optimization and simulates on TSMC 180nm and 250nm CMOS process at 1.8 V and 2.5 V supply voltages respectively. Supply voltage under room temperature 27C. The simulation result shows that a bandwidth is 8.10 MHz and 2.19 MHz in 180nm and 250nm Technology. Gain is 64.539 dB and 59.696 dB achieved for the two stage op-amp circuit. Keywords: Two stage operational amplifier, fully
amplifier architectures, but in this paper we apply the method to a specific two-stage CMOS op-amp. The simulation results have been obtained by TSMC 180nm and 250nm CMOS technology. Design has been carried out in Mentor Graphics tool. After the simulation, most of the transistors size still needed to be modified in order to optimize the performance.
differential, MOSFET.
1. INTRODUCTION
Operational amplifier is among the most used electronic devices today, used in a wide range of consumer devices, industrial and scientific. In many applications of operational amplifiers, the gain of a single stage amplifier is not sufficient. Architectures of operational amplifiers using two or more gain stages widely used in higher gains are needed. Op-amps are available in many topologies, a two stage op-amp is an example of this kind, which is used when the high input impedance and low output impedance is needed. CMOS operational amplifiers can be used effectively for the practical consequences for example the design of a switched capacitor filter, analog-digital converters, oscillator, and digital-analog converter and waveform generators. The objective of the design methodology in this paper is to propose a simple but accurate equation for the design of high gain two stage CMOS op-amp. To do this, a simple analysis with some significant parameters (phase margin, bandwidth, gain margin, slew rate etc.) is performed. Process maintains a wide variety of specifications and constraints. In this paper, we formulate the CMOS op-amp design problem and their aspect ratios. The method we can be applied to a wide variety of Volume 2, Issue 2 March April 2013
Figure 1 The topology chosen for this Op-Amp design 2.2 Second Gain Stage The second stage is a current sink load inverter. The purpose of the second gain stage, as the name implies, is to provide additional gain, in the amplifier. Consisting of transistor M5 and M8, this stage takes the output from the drain of M2 and amplifies it through M5 which is in the standard common source configuration. Similar to the differential gain stage, this stage employs an active device, M8, to serve as the load resistance for M5. The gain of this stage is the transconductance of M5 times the effective load resistance comprised of the output resistance of M5 and M8. M8 is the driver while M7 acts as load. 2.3 Bias String The biasing of the operational amplifier is achieved with only two transistors along with a current source. Transistor M6 and the current source supply a voltage between the gate and source of M7 and M8. Transistor M7 and M8 sink a certain amount of current based on their gate to source voltage which is controlled by the bias string. M6 is diode connected to ensure it operate in the saturation region. Proper biasing of the other transistors in the circuit is controlled by the node voltages present in the circuit itself.
4. SIMULATION RESULT
4.1 Simulation Result for 180nm Technology Frequency Response:
Figure 3 Result of gain, gain margin, phase margin and bandwidth in 180nm technology Obtained result in 180nm technology is gain= 64.539 dB, gain margin is 17.997 dB, phase margin = 75.837, bandwidth = 8.10 MHz, and power dissipation for 180nm tech. is 0.92 mV. Slew Rate:
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Figure 6 Result of slew rate in 250nm technology Figure 4 Result of slew rate in 180nm technology Obtained slew rate is 25.69 V/s. Table 1: Comparison between 180nm and 250nm technology results
Technologies
Parameters 180nm Gain (dB) Gain margin (dB) Phase Margin () Bandwidth (MHz) Power Dissipation (mV) Slew Rate (V/ s) 64.539 17.997 75.837 8.10 0.92 25.69 250nm 59.696 12.984 78.822 2.19 2.09 11.99
5. CONCLUSION
Figure 5 Result of gain, gain margin, phase margin and bandwidth in 250nm technology Obtained result in 250nm technology is gain= 59.696 dB, gain margin is 12.984 dB, phase margin = 78.822, bandwidth = 2.19 MHz, and power dissipation for 250nm tech. is 2.09 mV. In this paper two stage op-amps is optimized and simulated in 180nm and 250nm technology. Power supply of the architecture is 1.8V and 2.5V respectively. Obtained gain in 180nm tech. is 64.539 dB, bandwidth is 8.10 MHzs and power dissipation is 0.924 mW. In 250nm tech. gain is 59.696 dB, bandwidth is 2.19 MHz and power dissipation is 2.09 mW. Try to improve gain and bandwidth in these two technologies and also find other characteristics (parameters) of two stage op-amp.
References
[1] Amana Yadav Design of Two-Stage CMOS OpAmp and Analyze the Effect of Scaling International Journal of Engineering Research and Applications (IJERA) ISSN: Vol. 2, Issue 5, September- October 2012, pp.647-654. [2] Amana Yadav, A Review Paper on Design and Synthesis of two stage CMOS op-amp International
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