SF2500EX22 HIGH POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage
Average On-State Current
Turn-Off Time : VDRM I : VRRM J : IT (A V) = 2500A : tq =400p.s (Max.)
Critical Rate of Rise of On-State Current : di/ dt=250AI p.s
Critical Rate of Rise of Off-State Voltage : dv I dt= 1500V I p.s
Flat Package MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Off-State Voltage VDRM and Repetitive Peak Reverse 2500 v VRRM Voltage Non-Repetitive Peak Reverse Voltage (Non-Repetitive<5ms, VRSM 2750 v Tj=0-125C) R.M.S On-State Current IT(RMS) 3925 A Average On-State Current IT(AV) 2500 A 45000 Peak One Cycle Surge On-State ITSM (50Hz) A Current (Non-Repetitive) 50000 (60Hz) 1 2 t Limit Value J2t 1X10 7 A 2 s Critical Rate of Rise of On-State di I dt 250 AI p.s Current (Note) Peak Gate Power Dissipation PQM 30 w Average Gate Power Dissipation PQ(AV) 4 w Peak Forward Gate Current IGM 6 A Peak Forward Gate Voltage VFGM 30 v Peak Reverse Gate Voltage VRGM 5 v Junction Temperature T J -40-125 oc Storage Temperature Range Tstg -40-125 oc Mounting Force - 39.23.9 kN Unit in mm --k.._ ____ 4
l 2008 * 1 -(1)
? I 750.5 _I 2608
I
I _I 430: 120MAX 1- ( 1) CATHODE 1- (2) CATHODE (BLACK) 2. ANODE 3. GATE (WHIT E) JEDEC - JEITA - TOSHIBA 13-120J1A Weight : 1350g Note: VD=112 Rated, Tj=120C, Gate Supply(Va=15V, Ra=8D, 1 2001-04-17 TOSHIBA SF2500EX22 ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL TEST CONDITION MIN. MAX. UNIT Repetitive Peak Off-State IDRM VDRM = VRRM =Rated, Current and Repetitive Peak - 120 rnA Reverse Current IRRM Tj=125C Peak On-State Voltage VTM ITM = 8000A, Tj = 25C - 1.82 v Tj= -40C - 4.0 Gate Trigger Voltage VQT v Vn=12V, RL=6D Tj=25C - 2.5 Tj= -40C - 400 Gate Trigger Current IQT rnA Tj=25C - 250 Gate Non-Trigger Voltage Van 0.2 - v Gate Non-Trigger Current Ian Vn = 1 I 2 Rated, Tj = 125C 5 rnA - Delay Time td Vn=0.5 Rated, Tj=25C - 5 p.s Gate Supply Gate Turn-On Time tgt <Va=15V, Ra=BD, - 10 p.s IT=1200A, Turn-Off Time tq dv I dt= 25V I p.s, Tj = 115C - 400 p.s VDRM= 1 I 2 Rated Holding Current IH Tj = 25C, RL = 6D - 300 rnA Critical Rate of Rise of dv ldt V DRM = 1 I 2 Rated, Tj = 125C 1500 VI p.s Off-State Voltage Gate Open Exponential Rise - Thermal Resistance Rth (j-f) Junction to Fin - 0.0125 CIW 2 2001-04-17 TOSHIBA ril 0 < E-< ....:l 0 > ril E-<
oc w. ::>o 0:::> ril z ES z < E-< w.
E-< z ril
:::> 0 ril ....
w.
Ow. r.:l.t' 0 0: :::> w. ::.:: < ril c.. 35 30 25 20 15 10 5 0 4000 0 50 40 30 20 GATE TRIGGER CHARACTERISTIC I I I I I I I r-- -fFGM=30V I I I I I I I I I I I I I I I I I I \ RECOMMENDED GATE CIRCUIT \ LOAD LINE I \ / SHADED AREA REPRESENTS f-- I v LOCUS OF POSSIBLE r-- /\/ TRIGGERING POINTS FROM r-- / /' -40-+125C \/ I I I I I I I r-- / \/ N PGM=30W I I /\. I I I I
\ RECOMMENDED GATE
REGION. r--c-IIMI6A 1 _ 0 2 3 4 5 6 7 8 INSTANTANEOUS GATE CURRENT iG (A) PT (A V) - IT (A V)
/18o 900 i 1201' /
60 I 1/. a=30 I I I / I J I / If v 1/
I I Vj
HALF SINE
WAVEFORM f\ I
A o Ll13o CONDUCTION
,. ANGLE 0 400 800 1200 1600 2000 2400 2800 AVERAGE ON-STATE CURRENT IT(AV) (A) SURGE ON-STATE CURRENT (NON -REPETITIVE) RATED LOAD
"' I'-- ........ , ,, ..... ....... r- 60Hz
........... 50 10 1 3 10 30 100 NUMBER OF CYCLES AT 50Hz AND 60Hz 3 E-< z 10000 ::> 0 5000 ""' 3000
0 :gt' 1000 0 ""' 500 z 300
100 Tj=125C/ v I J I I I I I I I SF2500EX22 .......... - .......
0.010 <o 0.008 l'ilC :I:6 2 0.006 z 0.004 0.002 / - 0 1 ...... v
3 (JUNCTION TO FIN) s / / / ms ..,.,.. ....- 10 30 100 300 1000 TIME t (s and ms) 2001-04-17 TOSHIBA SF2500EX22 RESTRICTIONS ON PRODUCT USE 000707EAA e TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc .. e The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc .. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. e The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. e The information contained herein is subject to change without notice. 4 2001-04-17