TQP7M9104

2W High Linearity Amplifier Applications

Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless

24-pin QFN 4x4mm SMT Package

Product Features
700-2700 MHz +32.8 dBm P1dB +49.5 dBm Output IP3 15.8 dB Gain at 2140 MHz +5V Single Supply, 435 mA Collector Current Internal RF overdrive protection Internal DC overvoltage protection Internal Active Bias On chip ESD protection Shut-down Capability Capable of handling 10:1 VSWR at 5Vcc, 2.14 GHz, 32.8 dBm CW Pout or 23.5 dBm WCDMA Pout

Functional Block Diagram

GND/NC GND/NC GND/NC GND/NC 24 23 22 21 20 GND/NC 19 GND/NC

Vbias GND/NC GND/NC RFin RFin GND/NC

1 2 3 4 5 6

18 17 16 15 14 13

Iref GND/NC RFout/Vcc RFout/Vcc RFout/Vcc GND/NC

10

11 GND/NC

GND/NC

GND/NC

GND/NC

Backside Paddle - RF/DC Ground

General Description
The TQP7M9104 is a high linearity driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP/GaAs HBT delivers high performance across 700-2700 MHz range of frequencies with 15.8 dB Gain, +49.5 dBm OIP3 and +32.5 dBm P1dB at 2.14 GHz while only consuming 435 mA quiescent collector current. All devices are 100% RF and DC tested. The TQP7M9104 incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. The TQP7M9104 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device is an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multi-carrier 3G / 4G base stations.
Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

Pin Configuration
Pin #
1 4, 5 14, 15, 16 18 2, 3, 6, 7, 8, 9, 10, 11, 12,13, 17, 19, 20, 21, 22, 23, 24 Backside Paddle

GND/NC

Symbol
Vbias RFin RFout/Vcc Iref GND / NC RF/DC Ground

Ordering Information
Part No.
TQP7M9104 TQP7M9104-PCB900 TQP7M9104-PCB2140

Description
2W High Linearity Amplifier 920-960MHz EVB 2.11-2.17GHz EVB

Standard T/R size =2500 pieces on a 13 reel. - 1 of 13Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network

GND/NC

12

TQP7M9104
2W High Linearity Amplifier Specifications Absolute Maximum Ratings
Parameter
Storage Temperature Device Voltage, Vcc Maximum Input Power, CW

Recommended Operating Conditions

Parameter
Vcc Tcase Tj (for>10 hours MTTF)
6

Rating
-65 to +150C 6.5 V +30 dBm

Min Typ Max Units

+5 -40 +5.25 +85 170 V C C

Operation of this device outside the parameter ranges given above may cause permanent damage.

Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.

Electrical Specifications
Test Conditions:VCC = +5V, ICQ = 435 mA, T = 25C using a TQP7M9104-PCB2140 application circuit.

Parameter
Operational Bandwidth Test Frequency Power Gain Input Return Loss Output Return Loss Output IP3 WCDMA Channel Power Output P1dB Noise Figure Quiescent Collector Current, Icq Vcc Iref Thermal Resistance (jnc to case) jc
(1)

Conditions

Min
700 14.3

Typical
2140 15.8 12 9.5 +49.5 +23.8 +32.8 4.4 435 +5 19 15.7

Max
2700 17.3

Units
MHz MHz dB dB dB dBm dBm dBm dB

Pout=+17 dBm/tone, f=1MHz at -50 dBc ACLR

+45.5 +32 355

490

mA V mA C/W

Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

- 2 of 13-

Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network

TQP7M9104
2W High Linearity Amplifier Device Characterization Data
45 40
0. 4

Input Reflection Coefficients

1.0
6 0.

Output Reflection Coefficients

6 0.

Swp Max 3GHz

2. 0

1.0

Swp Max 3GHz

2. 0

0.8

0 3.
0 4.
5.0

30

Gain (dB)

25
10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0

10.0

0.2

0.4

0.6

0.8

1.0

2.0

3.0

4.0

.4 -0

.4 -0

.0 -2

-0 .6

-0.8

S(1,1)

Frequency (GHz)

Swp Min 0.05GHz

-0.8

-1.0

S-Parameter Data
Vcc = +5 V, Icq = 435 mA, Iref = 19mA, T = +25 C, unmatched 50 ohm system, calibrated to device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) 50 -0.4553 -179.26 20.126 118.98 -43.273 4.1446 -1.8524 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -0.4348 -0.4583 -0.5124 -0.5796 -0.6594 -0.7617 -0.8777 -1.1121 -1.4274 -1.9525 -3.0149 -5.3234 -7.8162 -5.6951 -3.2673 -2.1416 178.69 176.36 173.38 171.48 170.04 169.21 168.95 168.56 167.84 165.88 163.02 162.27 -179.65 -159.12 -161.75 -169.16 15.971 13.24 10.778 8.9263 7.3201 6.2878 5.7693 5.5556 6.0222 6.3509 7.1412 8.1891 8.2216 6.6099 3.8288 0.9043 124.23 126.46 118.38 108.51 100.05 93.94 89.116 83.209 74.67 63.971 51.862 30.583 2.8455 -26.943 -51.412 -67.725 -42.615 -40.235 -40.956 -41.682 -42.533 -42.841 -40.461 -39.435 -41.097 -37.935 -36.666 -35.423 -35.631 -35.017 -37.551 -39.417 -1.4433 2.3772 0.7196 10.901 -8.3414 6.4435 3.1558 -0.2787 -1.3568 -22.971 -37.917 -57.21 -78.615 -113.27 -151.24 -168.38 -1.8878 -1.859 -1.5792 -1.6005 -1.6164 -1.531 -1.6296 -1.7656 -1.8812 -1.951 -1.9853 -1.7616 -1.5099 -1.2811 -1.2268 -1.4503

-1.0

0.5

1.5

2.5

-0 .6

.0 -2

S(2,2)

S22 (ang) -155.37 -166.21 -172.01 -174.84 -175.51 -174.73 -173.74 -171.43 -170.12 -167.74 -165.22 -163.19 -163.18 -167.05 -172.58 -179.96 175.32

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

- 3 of 13-

Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network

-3 .0

-3 .0

Swp Min 0.05GHz

-4 .0 -5. 0

Gain (S21)

-4 .0 -5. 0

10

2 -0.

2 -0.

-10.0

-10.0

15

5.0

20

10.0

5.0

Gmax
0

0. 4

35

0.8

0 3.
0 4.
5.0

0.2

0.2

10.0

TQP7M9104
2W High Linearity Amplifier Reference Design 869-894 MHz
Typical Performance at 25 C

Frequency (MHz)
Gain Input Return Loss Output Return Loss Output P1dB Output IP3
(+23 dBm/tone, f = 1 MHz)

869

880

894
20.8 -11.5 -9.8 +33.8 +44.7 23

Units
dB dB dB dBm dBm
C14 100 pF R6 220 D3 SM05T1G C13 R3 0 0.1 uF R1 33 nH 0603 R7 110

Vcc +5V

20.8 20.8 -13.3 -13 -7.7 -8.6 +34.3 +34.1 +44.9 +44.9 22 22.5 +5 435 19

C7 10 uF 6032 C17 1000 pF C1 100 pF B1 0 L3 0 Iref GND/NC RFout 18 17 16 15 C2 14 13 8.2 pF 4.7 pF L1 18 nH 0805 C3 J3 RF Output C15 100 pF

24

23

22

21

20 GND/NC

GND/NC

GND/NC

GND/NC

WCDMA Channel Power

(at -50 dBc ACLR)

dB V mA mA
R2 J2 RF Input C11 100 pF 22 pF 51 C10 2.7 pF L5 6.8 nH C8 C9

1 2 3 4 5 6

Vbias GND/NC GND/NC RFin RFin GND/NC

Supply Voltage, Vcc Quiescent Current, Icq Reference Current, Iref

GND/NC

U1
GND/NC GND/NC GND/NC GND/NC GND/NC GND/NC 12

GND/NC
RFout RFout GND/NC

L4 0

8.2 pF

10

C7
R6 R7

C17 C13
R3 R1

C1
B1

L4

C11

R2
L5

RF Performance Plots 869-894 MHz

22

Gain vs. Frequency

C8

C2

C10

C9

U1

L1

C14

L3

C15

C3

Notes: 1. Components shown on the silkscreen but not on the schematic are not used. 2. 0 resistors may be replaced with copper trace in the target application layout. 3. Iref can be used as device power down current by placing R7 at location R8. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. R1 is critical for device linearity performance. 7. Critical component placement locations: Distance between center of C8 and U1 device package is 243 mil (11 at 880MHz) Distance between center of L5 and U1 device package is 452 mil (20.5 at 880MHz) Distance between center of C2 and U1 device package is 355 mil (16.1 at 880MHz) Distance between center of C9 and U1 device package is 275 mil (12.4 at 880MHz)

Return Loss vs. Frequency

S11 S22
OIP3 (dBm)

55 50 45 40

OIP3 vs. Output Power vs. Frequency

1MHz Tone Spacing Temp.=+25oC

20

Return Loss (dB)

21
Gain (dB)

-5

-10

11

19

0.869 GHz
35 30 0.88 GHz

19

-15

0.894 GHz
18 0.85 0.86 0.87 0.88 0.89 0.90

-20 0.85

0.86

0.87

0.88

0.89

0.90

21

22

23

24

25

26

27

Frequency (GHz)

Frequency (GHz)

Output Power / Tone(dBm)

-40 -45
ACLR (dBm)

ACLR vs. Output Power vs. Frequency

W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW Temp.=+25oC

1100 1000 900

Icc (mA)

Collector Current vs. Output Power

Frequency : 0.88 GHz CW Signal Temp.=+25oC

-50 -55 0.869GHz -60 -65 12 14 16 18 20 22 24 26 0.88GHz

800 700 600 500

0.894GHz

400
20 22 24 26 28 30 32 34

Output Power (dBm)

Output Power (dBm)

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

- 4 of 13-

Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network

TQP7M9104
2W High Linearity Amplifier Application Circuit 920-960 MHz (TQP7M9104-PCB900)
C7
R6 R7

Vcc +5V R6 220 D3 SM05T1G C13 R3 0 0.1 uF R1 33 nH 0603 B1 0 L3 0 Iref GND/NC RFout 18 17 16 15 C2 14 13 8.2 pF 4.7 pF L1 18 nH 0805 C3 J3 RF Output C15 100 pF R7 110 C7 10 uF 6032 C17 1000 pF C1 100 pF

C17 C13
R3 R1

C1
B1

L4

L1

C14

L3

C15

24

23

22

21

20 GND/NC

GND/NC

GND/NC

GND/NC

C11

R2
L5

C8

C2

C10

C9

U1

C3

C14 100 pF 1 2 R2 J2 RF Input C11 100 pF 22 pF 51 C10 2.7 pF L5 6.8 nH 5 C8 6 C9 3 4 Vbias GND/NC GND/NC RFin RFin GND/NC

GND/NC

U1
GND/NC GND/NC GND/NC GND/NC GND/NC GND/NC 12

GND/NC
RFout RFout GND/NC

L4 0

6.8 pF

10

Notes: 1. See PC Board Layout under Application Information section for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 resistors may be replaced with copper trace in the target application layout. 4. Iref can be used as device power down current by placing R7 at location R8. 5. The recommended component values are dependent upon the frequency of operation. 6. All components are of 0603 size unless stated on the schematic. 7. R1 is critical for device linearity performance. 8. Critical component placement locations: Distance between center of C8 and U1 device package is 190 mil (9.2 at 940MHz) Distance between center of L5 and U1 device package is 452 mil (21.8 at 940MHz) Distance between center of C2 and U1 device package is 305 mil (14.7 at 940MHz) Distance between center of C9 and U1 device package is 275 mil (13.3 at 940MHz)

Bill of Material
Ref Des
n/a n/a D3 C9 B1, L3, L4, R3 L5 C3 C2, C8 C10 C1, C11, C14, C15 L1 C17 C13 C7 R2 R6 R7 R1 R8, R4, C12, C4,D3

Value
n/a n/a n/a 2.7 pF 0 6.8 nH 4.7 pF 8.2 pF 22 pF 100 pF 18 nH 1000 pF 0.1 uF 10 uF 51 220 110 33 nH n/a

Description
Printed Circuit Board Printed Circuit Board Zener, dual, SOT-23 Capacitor, Chip, 0603, 0.05pF, 50 V, Accu-P Resistor, Chip, 0603, 5%, 1/16W Inductor, 0603, 5% Capacitor, Chip, 0603, 0.05pF, 50 V, Accu-P Capacitor, Chip, 0603, 0.05pF, 50 V, Accu-P Capacitor, Chip, 0603, 5%, 50 V, NPO/COG Capacitor, Chip, 0603, 5%, 50V, NPO/COG Inductor, 1008, 5%, Coilcraft CS Series Capacitor, Chip, 0603, 10%, 50V, NPO/COG Capacitor, Chip, 0603, 50V, X5R, 10% Capacitor , Tantalum, 6032, 35V, 10% Resistor, Chip, 0603, 5%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Inductor, 0603, 5% Do Not Place

Manuf.
TriQuint TriQuint various AVX various Toko AVX AVX various various Coilcraft various various various various various various Toko

11

19

Part Number
1078282 1078282 06035J2R7ABSTR LL1608-FSL6N8 06035J4R7ABSTR 06035J8R2ABSTR

1008HQ-18NXJL

LL1608-FSL33N

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

- 5 of 13-

Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network

TQP7M9104
2W High Linearity Amplifier Typical Performance 920-960 MHz
Typical Performance at 25 C

Frequency (MHz)
Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+23 dBm/tone, f = 1 MHz) WCDMA Channel power (at -50 dBc ACLR) [1] Supply Voltage, Vcc Quiescent Collector Current, Icq Reference Current, Iref

920
20.8 -13 -9 +33.9 +45 +24

940
21 -12 -11.8 +33.8 +45 +23.5 +5 435 19

960
21 -11 -15 +33.4 +45 +23

Units
dB dB dB dBm dBm dBm V mA mA

Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.

RF Performance Plots 920-960 MHz

23

Gain vs. Frequency

Input Return Loss vs. Frequency

- 40 C +25C +85 C

22
21 20 19 - 40 C +25C +85 C

Return Loss (dB)

0.98 1.00

-5

Gain (dB)

-10

-15

18 0.90

0.92

0.94

0.96

-20 0.90

0.92

0.94

0.96

0.98

1.00

Frequency (GHz)

Frequency (GHz)

Output Return Loss vs. Frequency

- 40 C +25C +85 C

37

P1dB vs. Temperature

+85C +25C 40C

Return Loss (dB)

-5

36

P1dB (dBm)
0.92 0.94 0.96 0.98 1.00

35 34 33

-10

-15

-20 0.90

32 0.92

0.93

0.94

0.95

0.96

Frequency (GHz)

Frequency (GHz)

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

- 6 of 13-

Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network

TQP7M9104
2W High Linearity Amplifier
55 50

OIP3 vs. Output Power vs. Temperature

1MHz Tone Spacing

55 50

OIP3 vs. Output Power vs. Frequency

1MHz Tone Spacing Temp.=+25oC

OIP3 (dBm)

45 40 35 30 21 22 23 24 25 26 27

OIP3 (dBm)

45 40

- 40 C +25C +85 C

0.92 GHz
35 30 21 22 23 24 25 26 27 0.94 GHz

0.96 GHz

Output Power / Tone(dBm)

Output Power / Tone(dBm)

-40 -45

ACLR vs. Output Power vs. Temperature

W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW Frequency : 0.94 GHz

-40 -45

ACLR vs. Output Power vs. Frequency

W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW Temp.=+25oC

ACLR (dBm)

-50 -55 -60 -65 12 14 16 18 20 22 24 26 - 40 C +25C +85 C

ACLR (dBm)

-50 -55 0.92 GHz -60 -65 12 14 16 18 20 22 24 26 0.94 GHz 0.96 GHz

Output Power (dBm)

Output Power (dBm)

1100 1000 900

Collector Current vs. Output Power

Frequency : 0.94 GHz CW Signal Temp.=+25oC

Icc (mA)

800 700 600 500

400
16 18 20 22 24 26 28 30 32 34

Output Power (dBm)

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

- 7 of 13-

Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network

TQP7M9104
2W High Linearity Amplifier Application Circuit 2110-2170 MHz (TQP7M9104-PCB2140)
Vcc +5V R6 220
C7
R6 R7

D3 SM05T1G

R7 110 C7 10 uF 6032

C17 C13
R3 R1

C13 R3 0 0.1 uF R1 120 nH 0603 B1 0 L3 0 Iref GND/NC RFout 18 17 16 15 C2 14 13 2.7 pF L1 18 nH 0805

C17 1000 pF C1 100 pF

C1
B1

24

23

22

21

20 GND/NC

GND/NC

GND/NC

L1

C14

C14 100 pF 1 Vbias 2 R2 J2 RF Input C11 0 51 C10 2.4 pF 22 pF C8 5 6 C9 3 4 GND/NC GND/NC RFin RFin GND/NC
C3
C2

GND/NC

GND/NC

GND/NC

L4

L3

C15

L4 0

19

C15 22 pF

C11

R2 C10

C9
C8

U1

U1
GND/NC GND/NC GND/NC GND/NC GND/NC GND/NC

C3 100 pF

J3 RF Output

RFout RFout GND/NC

1.5 pF

10

11

Notes: 1. See PC Board Layout under Application Information section for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 resistors may be replaced with copper trace in the target application layout. 4. Iref can be used as device power down current by placing R7 at location R8. 5. The recommended component values are dependent upon the frequency of operation. 6. All components are of 0603 size unless stated on the schematic. 7. R1 is critical for device linearity performance. 8. Critical component placement locations: Distance between center of C8 and U1 device package is 50 mil (5.5 at 2140MHz) Distance between center of C2 and U1 device package is 113 mil (12.4 at 2140MHz) Distance between center of C9 and U1 device package is 275 mil (30.3 at 2140MHz)

Bill of Material
Ref Des
U1 n/a D3 C8 C9 C2 B1, L3, L4, R3, C11 C10, C15 C1, C14, C3 L1 C17 C13 C7 R2 R6 R7 R1 R8, R4, C12, C4, D3

Value
n/a n/a n/a 1.5 pF 2.4 pF 2.7 pF 0 22 pF 100 pF 18 nH 1000 pF 0.1 uF 10 uF 51 220 110 120 nH n/a

Description
2W High Linearity Amplifier Printed Circuit Board Zener, dual, SOT-23 Capacitor, Chip, 0603, 0.05pF, 50V, Accu-P Capacitor, Chip, 0603, 0.05pF, 50V, Accu-P Capacitor, Chip, 0603, 0.05pF, 50V, Accu-P Resistor, Chip, 0603, 5%, 1/16W Capacitor, Chip, 0603, 5%, 50V, NPO/COG Capacitor, Chip, 0603, 5%, 50V, NPO/COG Inductor, 1008, 5%, Ceramic Capacitor, Chip, 0603, 10%, 50V, NPO/COG Capacitor, Chip, 0603, 10%, 50V, X5R Capacitor , Tantalum, 6032, 20 %, 50V Resistor, Chip, 0603, 5%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Inductor, 0603, 5% Do Not Place

Manuf.
TriQuint TriQuint various AVX AVX AVX various various various Coilcraft various various various various various various Toko

12

Part Number
TQP7M9104 1078282 06035J1R5ABSTR 06035J2R4ABSTR 06035J2R7ABSTR

1008HQ-18NXJL

LL1608-FSR12J

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

- 8 of 13-

Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network

TQP7M9104
2W High Linearity Amplifier Typical Performance 2110-2170 MHz
Frequency
Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+17 dBm/tone, f = 1 MHz) WCDMA Channel power (at -50 dBc ACLR) [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq Reference Current , Iref

MHz
dB dB dB dBm dBm dBm dB V mA mA

2110
15.8 -12.4 -8.7 +32.9 +49 +23.5 4.4

2140
15.8 -12.0 -9.5 +32.8 +49.5 +23.8 4.4 +5 435 19

2170
15.8 -11.8 -10.5 +32.8 +50 +24.0 4.6

Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.

RF Performance Plots 2110-2170 MHz

18

Gain vs. Frequency

Input Return Loss vs. Frequency

- 40C +25C +85C

17
16 15 14

Return Loss (dB)

2.18 2.20

-5

Gain (dB)

-10

- 40C +25C +85C

-15

13 2.10

2.12

2.14

2.16

-20 2.10

2.12

2.14

2.16

2.18

2.20

Frequency (GHz)

Frequency (GHz)

Output Return Loss vs. Frequency

- 40C +25C +85C

35 34

P1dB vs. Temperature

+85C +25C 40C

Return Loss (dB)

-5

P1dB (dBm)

33 32 31 30 2.11

-10

-15

-20 2.10

2.12

2.14

2.16

2.18

2.20

2.12

2.13

2.14

2.15

2.16

2.17

Frequency (GHz)

Frequency (GHz)

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

- 9 of 13-

Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network

TQP7M9104
2W High Linearity Amplifier
55

OIP3 vs. Output Power vs. Temperature

1MHz Tone Spacing

55

OIP3 vs. Output Power vs. Frequency

1MHz Tone Spacing Temp.=+25oC

50

50

OIP3 (dBm)

45 40 35

OIP3 (dBm)

45 40 35 2.11 GHz 2.14 GHz 19 21 2.17 GHz 23 25

- 40 C +25C +85 C

30
13 15 17 19 21 23 25

30
13 15 17

Output Power / Tone(dBm)

Output Power / Tone(dBm)

-40

ACLR vs. Output Power vs. Temperature

W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW Frequency : 2.14 GHz

-40

ACLR vs. Output Power vs. Frequency

W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW Temp.=+25oC

-45

-45

ACLR (dBm)

-50 -55 -60

ACLR (dBm)

-50 -55 2.11 GHz -60 2.14 GHz 2.17 GHz

- 40 C +25C +85 C

-65
17 19 21 23 25 27

-65
17 19 21 23 25 27

Output Power (dBm)

Output Power (dBm)

1000

Icc vs. Output Power

Frequency : 2.14 GHz CW Signal Temp.=+25oC

6.0

Noise Figure vs. Frequency

Collector Current (mA)

900
800

5.0

700
600

NF (dB)
16 18 20 22 24 26 28 30 32 34

4.0

3.0 500

400

2.0 2.11

2.12

2.13

2.14

2.15

2.16

2.17

Output Power (dBm)

Frequency (GHz)

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

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TQP7M9104
2W High Linearity Amplifier Pin Configuration and Description
GND/NC GND/NC GND/NC GND/NC GND/NC 20 GND/NC 19

24

23

22

Vbias GND/NC GND/NC RFin RFin GND/NC

1 2 3 4 5 6

21

18 17 16 15 14 13

Iref GND/NC RFout/Vcc RFout/Vcc RFout/Vcc GND/NC

10

11 GND/NC

GND/NC

GND/NC

GND/NC

Backside Paddle - RF/DC Ground

Pin
1 2, 3, 6,7, 8, 9, 10, 11, 12, 13,17, 19, 20, 21, 22, 23, 24 4, 5 14, 15, 16 18 Backside paddle

Symbol
Vbias GND/NC RFin RFout / Vcc Iref RF/DC GND

Description
Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc. No internal connection. This pin can be grounded or N/C on PCB. Land pads should be provided for PCB mounting integrity. RF Input. DC voltage present, blocking capacitor required. Requires external match for optimal performance. RF Output. DC Voltage present, blocking cap required. Requires external match for optimal performance. Reference current into internal active bias current mirror. Current into Iref sets device quiescent current. Also, can be used as on/off control. Multiple Vias should be employed to minimize inductance and thermal resistance. Use recommended via pattern shown under mounting configuration and ensure good solder attach for optimum thermal and electrical performance

Evaluation Board PCB Information

TriQuint PCB 1080068 Material and Stack-up
Nelco N-4000-13 r=3.7 typ. 1 oz. Cu top layer 1 oz. Cu inner layer

0.014" 0.062" 0.006" Finished Board Thickness

Core 1 oz. Cu inner layer

0.014"

Nelco N-4000-13 1 oz. Cu bottom layer

50 ohm line dimensions: width = .031 spacing = .035.

GND/NC

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

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GND/NC

12

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TQP7M9104
2W High Linearity Amplifier Mechanical Information Package Marking and Dimensions
Package Marking: Part number 7M9104 Year, week - YYWW Assembly code - XXXXX

C A

4.000

0.203 Ref.

2.7000.050 Exp.DAP

PIN #1 IDENTIFICATION CHAMFER 0.300 X 45

.4000.050
B

4.000

7M9104

.500 Bsc 2.7000.050 Exp.DAP

R.075

.250.050

.85.05 0.000-.050
f .10 C d .08 C

2.500 Ref.

PCB Mounting Pattern

.64 TYP 16X .38 .50 PITCH, TYP 24X .70 FULL R.19

.64 TYP

2.70

2.70

COMPONENT SIDE

2.70

2.70 BACK SIDE

NOTES: 1. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from supplier to supplier, careful process development is recommended. 2. All dimensions are in millimeters [inches]. Angles are in degrees. 3. Use 1 oz. copper minimum for top and bottom layer metal. 4. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10). 5. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. 6. Place mounting screws near the part to fasten a back side heat sink. 7. Do not apply solder mask to the back side of the PC board in the heat sink contact region. 8. Ensure that the backside via region makes good physical contact with the heat sink.

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

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TQP7M9104
2W High Linearity Amplifier Product Compliance Information ESD Sensitivity Ratings Solderability
Compatible with both lead-free (260 C max. reflow temp.) and tin/lead (245 C max. reflow temp.) soldering processes. ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: 1C 1000 V and < 2000 V Human Body Model (HBM) JEDEC Standard JESD22-A114 IV 1000 V min Charged Device Model (CDM) JEDEC Standard JESD22-C101 Package lead plating: Annealed Matte Tin over Copper

RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free

MSL Classification
MSL Rating: Test: Standard: 1 +260 C convection reflow JEDEC standard IPC/JEDEC J-STD-020

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com Tel: Fax: +1.503.615.9000 +1.503.615.8902

For technical questions and application information: Email: sjcapplications.engineering@tqs.com

Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

Data Sheet: Rev H 09/24/12 2012 TriQuint Semiconductor, Inc.

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