NTS4101P Power MOSFET

20 V, 1.37 A, Single PChannel, SC70

Features

Leading 20 V Trench for Low RDS(on) 2.5 V Rated for Low Voltage Gate Drive SC70 Surface Mount for Small Footprint (2x2 mm) PbFree Package is Available

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V(BR)DSS RDS(on) Typ 83 mW @ 4.5 V 20 V 88 mW @ 3.6 V 104 mW @ 2.5 V 1.37 A ID Max

Applications

High Side Load Switch Charging Circuit Single Cell Battery Applications such as: Cell Phones,
Digital Cameras, PDAs
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter DraintoSource Voltage GatetoSource Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State Steady State TA = 25C TA = 70C TA = 25C PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value 20 8 1.37 0.62 0.329 4.0 55 to 150 0.5 260 W A C A C
1 2

PChannel MOSFET S

Units V V A

tp = 10 ms

MARKING DIAGRAM & PIN ASSIGNMENT

3

Operating Junction and Storage Temperature Source Current (Body Diode), Continuous Lead Temperature for Soldering Purposes (1/8 from case for 10 s)

D 3 TT M G G 1 G S 2

SC70/SOT323 CASE 419 STYLE 8 TT M G

THERMAL RESISTANCE RATINGS

Parameter JunctiontoAmbient Steady State (Note 1) Symbol RqJA Max 380 Units C/W = Device Code = Date Code* = PbFree Package

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

(Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.

ORDERING INFORMATION
Device NTS4101PT1 NTS4101PT1G Package SOT323 SOT323 (PbFree) Shipping 3000/Tape & Reel 3000/Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 206

March, 2006 Rev. 2

Publication Order Number: NTS4101P/D

NTS4101P
ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise stated)
Parameter OFF CHARACTERISTICS DraintoSource Breakdown Voltage DraintoSource Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 16 V TJ = 25C TJ = 70C VGS = 0 V, ID = 250 mA 20 24.5 13.7 1.0 5.0 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit

GatetoSource Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient DraintoSource On Resistance

VDS = 0 V, VGS = 8 V

VGS(TH) VGS(TH)/TJ RDS(on)

VGS = VDS, ID = 250 mA

0.45

0.64 2.7

1.5

V mV/C

VGS = 4.5 V, ID = 1.0 A VGS = 3.6 V, ID = 0.7 A VGS = 2.5 V, ID = 0.3 A

83 88 104

120 130 160

mW

CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge GatetoSource Charge GatetoDrain Charge SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time td(ON) tr td(OFF) tf VSD tRR Ta Tb QRR VGS = 0 V, IS = 0.3 A TJ = 25C TJ = 125C VGS = 4.5 V, VDD = 4.0 V, ID = 1.0 A, RG = 6.2 W 6.2 14.9 26 18 12 25 40 30 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 4.5 V, ID = 1.0 A VGS = 0 V, f = 1.0 MHz, VDS = 20 V 603 90 62 6.4 0.7 1.0 1.5 840 125 85 9.0 nC pF

DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage 0.61 0.5 10.9 7.1 3.8 4.25 nC 20 ns 1.2 V

Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge

VGS = 0 V, dISD/dt = 100 A/ms, IS = 1.0 A

2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.

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NTS4101P
TYPICAL CHARACTERISTICS
6 5 4 3 2 1 0 VGS = 4.5 V 3.5 V 3.0 V 2.5 V 2.2 V 2.0 V TJ = 25C 1.8 V ID, DRAIN CURRENT (A) 6 VDS w 10 V 5 4 3 2 1 0 TJ = 125C TJ = 25C TJ = 55C 0 0.4 0.8 1.2 1.6 2.0 2.4 VGS, GATETOSOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

1.6 V 1.4 V 1.2 V 1.0 V

VDS, DRAINTOSOURCE VOLTAGE (V)

Figure 1. OnRegion Characteristics

RDS(on), DRAINTOSOURCE RESISTANCE (W) RDS(on), DRAINTOSOURCE RESISTANCE (W)

Figure 2. Transfer Characteristics

0.16 VGS = 4.5 V 0.12 TJ = 125C

0.16 VGS = 3.6 V TJ = 125C 0.12 TJ = 25C 0.08 TJ = 55C 0.04

0.08

TJ = 25C

TJ = 55C 0.04

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

Figure 3. OnResistance versus Drain Current and Temperature

RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)

Figure 4. OnResistance versus Drain Current and Temperature

1.5 ID = 1.0 A VGS = 4.5 V C, CAPACITANCE (pF) 1.3

1000 800 600 400 200 0 COSS CRSS 25 0 25 50 75 100 125 150 0 4 8 12

TJ = 25C VGS = 0 V CISS

1.1

0.9

0.7 50

16

20

TJ, JUNCTION TEMPERATURE (C)

DRAINTOSOURCE VOLTAGE (V)

Figure 5. OnResistance Variation with Temperature http://onsemi.com

3

Figure 6. Capacitance Variation

NTS4101P
TYPICAL CHARACTERISTICS
5 QT 4 3 2 Q1 1 0 ID = 1.0 A TJ = 25C 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Q2 VGS IS, SOURCE CURRENT (A)

VGS, GATETOSOURCE VOLTAGE (V)

3 VGS = 0 V

1 TJ = 125C TJ = 25C 0 0 0.2 0.4 0.6 0.8 1

VSD, SOURCETODRAIN VOLTAGE (V)

Figure 7. GatetoSource and DraintoSource Voltage versus Total Charge

Figure 8. Diode Forward Voltage versus Current

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NTS4101P
PACKAGE DIMENSIONS
SC70 (SOT323) CASE 41904 ISSUE M
D e1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

HE
1 2

b e

A 0.05 (0.002) A1

A2 L

DIM A A1 A2 b c D E e e1 L HE

MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00

MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40

MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079

INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083

MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095

STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN

SOLDERING FOOTPRINT*
0.65 0.025 0.65 0.025

1.9 0.075 0.9 0.035 0.7 0.028

SCALE 10:1

mm inches

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTS4101P/D