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0.5 - Im Z* 0 0 0.5 Re Z* 1
DIFFUSION IMPEDANCES
ER@SE/LEPMI J.-P. Diard, B. Le Gorrec, C. Montella Hosted by Bio-Logic @ www.bio-logic.info
Contents
1 Mass transfer by diusion, Nernst boundary condition 1.1 General diusion equations . . . . . . . . . . . . . . . . . . . . . 1.2 Semi-innite diusion . . . . . . . . . . . . . . . . . . . . . . . . 1.2.1 Semi-innite linear diusion . . . . . . . . . . . . . . . . . 1.2.2 Semi-innite radial cylindrical diusion (outside) . . . . . 1.2.3 Semi-innite spherical diusion . . . . . . . . . . . . . . . 1.3 Bounded diusion condition (linear diusion) . . . . . . . . . . . 1.3.1 Randles circuit . . . . . . . . . . . . . . . . . . . . . . . . 1.3.2 Corrosion equivalent circuit . . . . . . . . . . . . . . . . . 1.4 Radial cylindrical diusion . . . . . . . . . . . . . . . . . . . . . . 1.4.1 Finite-length diusion outside a cylinder . . . . . . . . . . 1.4.2 Semi-innite outside a cylinder . . . . . . . . . . . . . . . 1.5 Spherical diusion . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5.1 Finite-length difusion outside a sphere, reduced impedance #1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5.2 Finite outside sphere, reduced impedance # 2 . . . . . . . 1.5.3 Innite outside sphere . . . . . . . . . . . . . . . . . . . . 2 Mass transfer by diusion, restricted diusion 2.1 General diusion equations . . . . . . . . . . . . . . 2.1.1 Internal cylinder and sphere with null radius 2.2 Linear diusion . . . . . . . . . . . . . . . . . . . . . 2.2.1 Modied restricted diusion impedance . . . 2.2.2 Anomalous diusion impedance . . . . . . . . 2.3 Cylindrical diusion . . . . . . . . . . . . . . . . . . 2.4 Spherical diusion . . . . . . . . . . . . . . . . . . . 2.4.1 Randles circuit for restricted linear diusion . 3 Gerischer and diusion-reaction impedance 3.1 Gerischer and modied Gerischer impedance 3.1.1 Gerischer impedance . . . . . . . . . . 3.1.2 Modied Gerischer impedance #1 . . 3.1.3 Modied Gerischer impedance #2 . . 3.2 Diusion-reaction impedance . . . . . . . . . 3.2.1 Reduced impedance #1 . . . . . . . . 3.2.2 Reduced impedance #2 . . . . . . . . 3.3 Appendix . . . . . . . . . . . . . . . . . . . . 5 5 6 6 7 8 8 10 10 12 12 12 13 13 13 13 15 15 15 16 17 17 18 18 19 21 21 21 22 23 24 24 24 26
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CONTENTS
Chapter 1
where denotes a smal deviation (or excursion) from the initial steady-state value, d = 1 corresponds to a planar electrode, d = 2 to a cylindrical electrode (radial diusion) and d = 3 to a spherical electrode [5, 25] (Fig. 1.1), it is obtained, using the Nernstian boundary condition c(r ) = 0: Id/21 ( i u ) Kd/21 ( i u) Id/21 ( i u) Kd/21 ( i u ) J(r0 , i u) Z (u) = c(r0 , i u) i u (Id/2 ( i u) Kd/21 ( i u ) + Id/21 ( i u ) Kd/2 ( i u))
where u is a reduced frequency and = r /r0 . In (z) gives the modied Bessel function of the rst kind and order n and Kn (z) gives the modied Bessel function of the second kind and order n [37]. In (z) and Kn (z) satisfy the dierential equation: ( ) y n2 + z 2 + z y + z 2 y = 0
r0 r
r0
r0
Figure 1.1: Planar difusion (left), outside [15] (or convex [22]) diusion ( = r /r0 > 1, middle), and central (or concave) diusion ( < 1, right).
1.2
1.2.1
Semi-innite diusion
Semi-innite linear diusion
(1 i) 2 = , Re ZW () = , Im ZW () = i 1 F = 2 , f= , X : bulk concentration, unit: cm2 s1/2 RT n F f X 2 DX ZW () = Reduced impedance 1 1 1 ZW (u) = ZW () = , u = , Re ZW (u) = , Im ZW (u) = 2 2 2u 2u iu
1 u Im ZW 1
4 0 0 Re ZW 1
Randles circuit The equivalent circuit in Fig. 1.4 was initially proposed by Randles for a redox reaction O + ne R [28]. = O + R
Rct
Rct )
3
+ Rct ( ) Re Z() = 3 1 + 2 Cdl + 2 2 Cdl 2 + 2 2 Cdl 2 Rct + 2 Cdl 2 Rct 2 3 2 2 Cdl 2 Cdl Rct 2 Cdl Rct 2 ) Im Z() = ( 3 1 + 2 Cdl + 2 2 Cdl 2 + 2 2 Cdl 2 Rct + 2 Cdl 2 Rct 2 Reduced impedance The frequency response of the Randles circuit can be described in terms of two time constants for faradaic (f ) and diusional (d ) processes [35] (Fig. 1.5). (1 + i) T (i + u) Z(u) = Rct T 2 u + (1 + i) (1 + T + i u) u ( ) 2 u = d , d = Rct / 2 2 , T = d /f , f = Rct Cdl ( ( ) ) 3 T 2 2 (1 + u) + 2 u 2 ) Re Z (u) = ( 2 2 2 T u (1 T + u) + 2 u T 2 + (1 + T ) u + u3 ( )) ( T 2 T (1 u) 2 u 1 T + u2 ) Im Z (u) = ( 2 2 2 T u (1 T + u) + 2 u T 2 + (1 + T ) u + u3 Z (u) =
u0
lim Re Z (u) = 1
1 1 1 + , lim Im Z (u) = T 2 u u0 2u
1.2.2
d = 2, c() = 0
(Fig. 1.6)
a 2 Im Z Im Z 2
1 Re Z
1 1T Re Z
Figure 1.5: a: Nyquist diagram of the reduced impedance for the Randles circuit
(Fig. 1.4). Semi-innite linear diusion. T = 1, 2, 5, 10, 16.4822, 102 , 104 . Line thickness increases with T . One apex for T > 16.4822. The arrows always indicate the increasing frequency direction. b: Extrapolation of the low frequency limit plotted for T = 5.
1 4 Im Z uc 0.542 0 0 4 2 Re Z 4
Figure 1.6: Reduced impedance for semi-innite radial diusion outside a cicrcular
cylinder. Dot: reduced characteristic angular frequency: uc = 0.542.
1.2.3
1.3
c(r ) = 0 Originally derived by Llopis and Colon [20], and subsequently re-derived by Sluyters [31] and Yzermans [39], Drossbach and Schultz [13], and Schuhmann [30] [4].
Im Z
uc 1 0.2 0 0 0.5 Re Z 1
Figure 1.7: Reduced impedance for spherical (outside) diusion. Dot: reduced char acteristic angular frequency: uc = 1, Re Z (uc ) = 1/2, Im Z (uc ) = (1 2)/2.
IUPAC terminology: bounded diusion [32] Finite-length diusion with transmissive boundary condition [17, 21] tanh i u , u = d , d = 2 /D, = 2 u = iu lim ZW (u) = 1, lim i u ZW (u) = 1
u
ZW (u)
u0 Re ZW () =
0.5 Im ZW
uc 2.541
4 0 0 0.5 Re ZW 1
Rct
1.3.1
Randles circuit
tanh i u Zf (u) = Rct + Rd , u = d , d = 2 /D iu sin() + sinh() Re Zf () = Rct + Rd , = 2u (cos() + cosh()) sin() sinh() Im Zf () = Rd (cos() + cosh()) tanh i u iu ) tanh i u Rct + Rd iu
Impedance
Z(u) =
Z (u) =
1.3.2
Corrosion of a metal M with limitation by mass transport of oxidant (Fig. 1.12) on a rotating disk electrode (RDE) [26]. tanh i u Rct Rd iu , u = d , d = 2 /D (1.1) Z(u) = tanh i u Rct + Rd iu
11
log 2 4 log T 0
Figure 1.11: Impedance diagram array for the Randles circuit with bounded diusion
(Fig. 1.10).
Rct
Figure 1.12: Equivalent circuit for corrosion of a metal M with limitation by mass
transport of oxidant. Rct : charge transfer of the reaction of metal oxidation.
tanh i u Z(u) Rd iu Z (u) = (1 + ) = (1 + ) , = Rd Rct tanh i u 1+ iu Two limiting cases (Fig. 1.13): 1: Z (u) 1: Z (u) , uc2 = 2 , quarter of circle, (Fig. 1.7) + iu
(1.2)
(1.4)
0.5 Im Z
2
10
2.541 102
0.5 Re Z
Figure 1.13: Nyquist diagram of the corrosion equivalent circuit. Large black dot :
uc1 = 2.541, small red dot : uc2 = 2 .
1.4
1.4.1
I0 ( i u ) K0 ( i u) I0 ( i u) K0 ( i u ) ( ) Log() i u I1 ( i u) K0 ( i u ) + I0 ( i u ) K1 ( i u)
2 u = r0 /D, = r /r0
Figure 1.14: Central ( < 1) and outside ( > 1) cylindrical diusion impedance.
= r /r0 = 102 , 101 , 0.4, 1.01, 2, 5, 20, 100. The line thickness increases with . Dots: reduced characteristic angular frequency (apex of the impedance arc): uc = 0.514484, 1.22194, 4.74992, 25516., 3.40142, 0.298271, 0.0186746, 0.000800438.
1.4.2
lim Z (u) =
K0 ( i u) i u K1 ( i u)
(Fig. 1.6)
13
1.5
Spherical diusion
1.5.1
(1 1/) 1 +
2 1 0 -1 0 1 5 r 10
Figure 1.15: Central ( < 1) and outside ( > 1) spherical diusion impedance. =
r /r0 = 0.1, 0.4, 0.91, 1.1, 2, 5, 50. Line thickness increases with . Dots: reduced char2 acteristic angular frequency: uc = r0 /D = 0.3632, 3.095, 289, 275.8, 4.547, 0.6927, 1. Change of log uc with .
1.5.2
1.5.3
(Fig. 1.7)
u 2 + 2u ) , Im Z (u) = ( ) Re Z (u) = ( 2 1 + 2u 2 1 + 2u + u
1+
iu
0.5 - Im Z* log uc
2 1 0 -1 -1 0 d log 2.54
0 0 0.5 Re Z* 1
10
Figure 1.16: Central ( < 0) and outside ( > 0) spherical diusion impedance.
= (r r0 )/r0 = 0.99, 0.8, 0.5, 0.1, 0.1, 1, 3, 100. Line thickness increases with . Dots: reduced characteristic angular frequency: uc = (r r0 )2 /D = 0.0299, 0.577, 1.37, 2.32, 2.76, 4.55, 8.33, 104 , uc increases with . Change of log uc with .
Chapter 2
( ) c(x, t) 1d d1 c(x, t) = Dx x t x x where denotes a smal deviation (or excursion) from the initial steady-state value, d = 1 corresponds to a planar electrode, d = 2 to a cylindrical electrode (radial diusion) and d = 3 to a spherical electrode [5, 25] (Fig. 1.1), it is obtained, using the condition J(r ) = 0: Id/21 ( i u) Kd/2 ( i u ) + Id/2 ( i u ) Kd/21 ( i u) J(r0 , i u) Z (u) = c(r0 , i u) i u (Id/2 ( i u ) Kd/2 ( i u) Id/2 ( i u) Kd/2 ( i u )) Terminology [24]: bounded system [16], nite-space diusion [1, 2], nite length diusion [18], restricted diusion [10, 9, 12], reective boundary condition [27], impermeable boundary [38], impermeable barrier condition [15], impermeable surface [11].
2.1.1
r0 = 0,
,d
Figure 2.1: Restricted diusion impedance. d = 1: thin planar layer, d = 2: cylinder, d = 3: sphere. Id/21 ( i u) Z (u) = i u Id/2 ( i u)
15
16CHAPTER 2. MASS TRANSFER BY DIFFUSION, RESTRICTED DIFFUSION Low frequency limit Fig. 2.2. u 0 Z (u) 1 id d+2 u
C ,d R
Figure 2.2: Low frequency equivalent circuit for restricted diusion impedance. R =
,d
Figure 2.3: High frequency equivalent circuit for restricted diusion impedance.
2.2
d=1
Linear diusion
Id/21 ( i u) I1/2 ( i u) coth i u Z (u) = = = i u Id/2 ( i u) i u I1/2 ( i u) iu
u0
lim Z (u) =
Re Z () =
Reduced characteristic angular frequency: uc1 3 (d(d+2)) [5], 5.12 [3], 4 [8], 3.88 [7].
17
d 1 1 1
d 2 1
d 3
Im Z
Im Z
uc 3.88
uc 11.7
Im Z
13 14 15
0 0 Re Z 13
0 0 14 Re Z
0 0 15 Re Z
Figure 2.4: Nyquist diagram of the reduced impedance for the restricted diusion
impedance plotted for d = 1, 2, 3. Dots: reduced characteristic angular frequency: uc1 = 3.88, uc2 = 11.7, uc3 = 22.3.
2.2.1
, u = d , d = 2 /D (i u) 2 ( ( ) ( ( )) ( ) ( ( ))) u/2 sin sin 2u/2 sin cos sinh 2u/2 cos 4 4 4 4 ( ( )) ( ( )) Re Z (u) = cos 2u/2 sin cosh 2u/2 cos 4 4 ( ( ) ( /2 ( )) ( ) ( /2 ( ))) /2 sin 4 + sin 4 sinh 2u cos u cos 4 sin 2u 4 ( ( )) ( ( )) Im Z (u) = cos 2u/2 sin cosh 2u/2 cos 4 4
coth (i u) 2
2.2.2
[6]
Z() = Rd
coth (i d ) (i d )
/2
/2
1/2
, 1 ( 2 D )1/
uc 22.3
1.2
0.9 Im Z 0.6
uc 0.3
5.1
0 0 4 13 Re Z 2 0.6
Figure 2.5: Nyquist diagram of the reduced modied restricted diusion impedance,
plotted for = 0.8. uc depends on [7].
The D unit (D/cm2 s ) depends on . ( ( ) ( ( )) ( ) ( ( ))) u 2 1 cos sin 2u/2 sin sin sinh 2u/2 cos 4 4 4 ( ( )) ( 4 ( )) cos 2u/2 sin 4 cosh 2u/2 cos 4 ( ( ) ( ( )) ( ) ( ( ))) u 2 1 sin sin 2u/2 sin + cos sinh 2u/2 cos 4 4 4 4 ( ( )) ( ( )) Im Z (u) = cos 2u/2 sin cosh 2u/2 cos 4 4 (Fig. 2.6)
Re Z (u) =
2.3
Cylindrical diusion
Id/21 ( i u) I0 ( i u) = Z (u) = i u Id/2 ( i u) i u I1 ( i u)
d = 2, : cylinder radius
u0
lim Z (u) =
1 2i , lim i u Z (u) = 1 4 u u
u = d , d = 2 /D
2.4
Spherical diusion
d = 3, : sphere radius
19
Im Z
0.5 u 5
Figure 2.6: Nyquist diagram of the reduced anomalous diusion impedance. Left:
= 0.8, right: change of Nyquist diagram with ( : 1, 0.9, 0.8, 0.7, 0.6). Dots: u = 5 [6].
lim Z (u) =
1 3i , lim i u Z (u) = 1 5 u u u = d , d = 2 /D, = 2 u 2 cos() 2 cosh() + sin() + sinh() cos() + (2 + 2 ) cosh() 2 (sin() + sinh())
Re Z () = Im Z () =
(2 +
2)
2.4.1
Impedance coth i u Zf (u) Zf (u) = Rct +Rd , u = d , d = 2 /D , Z(u) = 1 + i (u/d ) Cdl Zf (u) iu
Cdl
Rct ZM
Chapter 3
1 1 + iu
In view of the earliest derivation of such an impedance by Gerischer, [14] it seems a good idea to name it the Gerischer impedance ZG [32, 33].
uc
3 u 1
Im ZG
0 0 Re ZG 3 8 1
Figure 3.1: Reduced Gerischer impedance. Some caracteristic values are given in [19].
Phase angle for dashed lines : /8, /6 and /4 respectively.
u0
i u ZG (u) = 1
21
Re
ZG (u)
3.1.2
3 uc
3 uc 3 uc 1 0.75
2 0.5
0 0.5
0.75
Figure 3.2: Reduced modied Gerischer impedance. = 0.5, 0.6, 0.7, 0.8, 0.9, 1. The
line thickness increases with . Dots: characteristic frequency uc at the apex of the impedance arc. Change of uc for the modied Gerischer impedance (solid line) and change of 3/ with (dashed line). uc 3/ for [0.53, 1] (|(uc 3/)|/uc < 5%).
Re ZG (u) =
cos( 1 arctan( 2
23
3.1.3
1
/2
0 0 0.5 Re ZG2 1
3 uc 2 3 0.5 0.75 1
Figure 3.3: Reduced modied Gerischer impedance #2. = 0.5, 0.6, 0.7, 0.8, 0.9, 1.
The line thickness increases with . Dots: characteristic frequency uc at the apex of the impedance arc. Change of uc for the modied Gerischer impedance #2.
3.2
3.2.1
Diusion-reaction impedance
Reduced impedance #1
tanh i u + Z (u) = iu + tanh lim Z (u) = 1, lim i u + Z (u) = coth u u0 tanh i u 1 0 Z (u) ZW (u) = , Z (u) ZG (u/) = iu 1 + i u/
0.5 Im Z log uc 3 2 1 log 2.541 0 0 0.5 Re Z 1 0 2 0 log 2
Figure 3.4: Diusion-reaction reduced impedance #1. = 103 , 1, 103 . The line
thickness increases with . uc = 2.542, 3.657, 1732. Change of log uc with log for the diusion-reaction reduced impedance #1. 0 uc 2.54, uc 3.
Re Z (u) =
) ( ( )1 ( )1 coth( ) sinh(2 u2 + 2 4 cau ) cau + sin(2 u2 + 2 4 sau ) sau ( ) 1 1 1 (u2 + 2 ) 4 cos(2 (u2 + 2 ) 4 sau ) + cosh(2 (u2 + 2 ) 4 cau )
u u arctan( ) arctan( ) cau = cos( ), sau = sin( ) 2 2 ( ) ( )1 ( )1 coth( ) sin(2 u2 + 2 4 sau ) cau sinh(2 u2 + 2 4 cau ) sau ( ) Im Z (u) = 1 1 1 (u2 + 2 ) 4 cos(2 (u2 + 2 ) 4 sau ) + cosh(2 (u2 + 2 ) 4 cau )
3.2.2
coth tanh (1 + i u) Z (u) = (1 + i u) lim Z (u) = 1, lim (1 + i u) Z (u) = coth u u0 tanh i u/ 1 lim Z (u) = ZW (u/) = , lim Z (u) = ZG (u) = 0 1 + iu i u/
Reduced impedance #2
) ( ( )1 ( )1 coth( ) sinh(2 1 + u2 4 cau ) cau + sin(2 1 + u2 4 sau ) sau ( ) Re Z (u) = 1 1 1 (1 + u2 ) 4 cos(2 (1 + u2 ) 4 sau ) + cosh(2 (1 + u2 ) 4 cau )
25
Figure 3.5: Diusion-reaction reduced impedance #2. = 104 , 1, 103 . The lLine
thickness increases with . uc = 25407, 3.657, 1.732. Change of log uc with log for the diusion-reaction reduced impedance #2. 0 uc 1/(2.54 ), uc 3.
) ( ) arctan(u) arctan(u) cau = cos , sau = sin 2 2 ) 1 ( ( )4 ( )1 coth( ) sin(2 1 + u2 sau ) cau sinh(2 1 + u2 4 cau ) sau ) ( Im Z (u) = 1 1 1 (1 + u2 ) 4 cos(2 (1 + u2 ) 4 sau ) + cosh(2 (1 + u2 ) 4 cau )
3.3
Appendix
Table 3.1: Bounded diusion and diusion-reaction impedance. Denomination Reduced Nyquist impedance diagram impedance
1 u 1
Warburg
1 ZW = iu
4 0 0 1 uc 2.541
Bounded diusion
ZW =
tanh i u iu
4 0 0
uc 1
Z =
1+
iu
0 0
4 1
K0 ( i u) Z = i u K1 ( i u)
1 4 uc 0.542 0 0 4 2
uc 3
Gerischer
1 ZG = 1 + iu
4 0 0 1
uc
Modied Gerischer
1 ZG = 1 + (i u)
0 0 4 1
3.3. APPENDIX
27
Denomination
Table 3.2: Restricted diusion impedance. Reduced Nyquist impedance diagram impedance
d=1 1
ZM,1
13
coth i u = iu
ZM,2
I0 ( i u) = i u I1 ( i u)
ZM,3 =
1 +
1 i u coth i u
Table 3.3: Restricted diusion impedance/continued. Denomination Reduced Nyquist impedance diagram impedance
1.2
0.9
Z =
coth (i u) (i u)
/2
Im Z 0.6
/2
uc 0.3
5.1
0 0 4 13 Re Z 2 0.6
Z =
coth (i u) (i u)
/2
Im Z
0.5 u 5
1/2
2 0 0 Re Z 4 0.5
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