BG Cau Kien Dien Tu Thuc Linh

HC VIN CNG NGH BU CHNH VIN THNG
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CU KIN IN T & QUANG IN T
Ging vin: in thoi/E-mail: B mn:
ThS. Trn Thc Linh 0914932955/thuclinh_dt@yahoo.com K thut in t - Khoa K thut in t 1
Hc k/Nm bin son: 2/2009
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Ni dung mn hc
Chng 1- Gii thiu chung Chng 2- Cu kin th ng Chng 3- Vt l bn dn Chng 4- Diode (it) Chng 5- BJT (Transistor lng cc) Chng 6- FET (Transistor hiu ng trng) Chng 7- Thyristors: SCR Triac Diac - UJT Chng 8- Cu kin quang in t
GING VIN: ThS. Trn Thc Linh B MN: K thut in t - KHOA KTT1
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Ti liu hc tp
Ti liu chnh:
Slide bi ging Bi ging Cu kin in t v quang in t, Mnh H, Hc vin CNBCVT, 2009-2010
Ti liu tham kho:

Electronic Devices and Circuit Theory, Ninth edition, Robert Boylestad, Louis Nashelsky, Prentice - Hall International, Inc, 2006. Linh kin bn dn v vi mch, H vn Sung, NXB GD, 2005 Gio trnh Cu kin in t v quang in t, Trn Th Cm, Hc vin CNBCVT, 2002
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Yu cu mn hc
Sinh vin phi c trc cc slide bi ging trc khi ln lp Tch cc tr li v t cu hi trn lp hoc qua email ca GV Lm bi tp thng xuyn, np v bi tp bt c khi no Ging vin yu cu T thc hnh theo yu cu vi cc phn mm EDA im mn hc: Kim tra : - Cu hi ngn Chuyn cn : 10 % - Bi tp Kim tra gia k: 10 % Thi kt thc: - L thuyt: + Trc nghim Th nghim : 10 % + Cu hi ngn Thi kt thc : 70 % - Bi tp
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Chng 1- Gii thiu chung

1. Gii thiu chung v cu kin in t 2. Phn loi cu kin in t 3. Gii thiu v vt liu in t 4. Gii thiu cc phn mm EDA h tr mn hc
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1. Gii thiu chung v Cu kin in t

Cu kin in t l cc phn t linh kin ri rc, mch tch hp (IC) to nn mch in t, h thng in t Cu kin T ng dng trong nhiu lnh vc. Ni bt nht l ng dng trong lnh vc in t - vin thng, CNTT Cu kin T rt phong ph, nhiu chng loi a dng Cng ngh ch to linh kin in t pht trin mnh m, to ra nhng vi mch c mt rt ln (Vi x l Pentium 4: > 40 triu Transistor,) Xu th cc cu kin in t c mt tch hp ngy cng cao, tnh nng mnh, tc ln
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Vi mch v ng dng
Processors CPU, DSP, Controllers Memory chips RAM, ROM, EEPROM Analog Thng tin di ng, x l audio/video Programmable PLA, FPGA Embedded systems Thit b t, nh my Network cards System-on-chip (SoC)
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nh: amazon.com Trang 7
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ng dng ca linh kin in t
Chips Sand
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Chips on Silicon wafers

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Lch s pht trin cng ngh (1)

Cc cu kin bn dn nh diodes, transistors v mch tch hp (ICs) c th tm thy khp ni trong cuc sng (Walkman, TV, t, my git, my iu ho, my tnh,). Nhng thit b ny c cht lng ngy cng cao vi gi thnh r hn PCs minh ho rt r xu hng ny Nhn t chnh em li s pht trin thnh cng ca nn cng nghip my tnh l vic thng qua cc k thut v k nng cng nghip tin tin ngi ta ch to c cc transistor vi kch thc ngy cng nh gim gi thnh v cng sut Bi hc khm ph cc c tnh bn trong ca thit b bn dn SV hiu c mi quan h gia cu to hnh hc v cc tham s ca vt liu; hiu c cc c tnh v in ca chng
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Audion (Triode) 1906, Lee De Forest
First point contact transistor (germanium) 1947, John Bardeen and Walter Brattain Bell Laboratories
1883 Thomas Alva Edison (Edison Effect) 1904 John Ambrose Fleming (Fleming Diode) 1906 Lee de Forest (Triode) Vacuum tube devices continued to evolve 1940 Russel Ohl (PN junction) 1947 Bardeen and Brattain (Transistor) 1952 Geoffrey W. A. Dummer (IC concept) 1954 First commercial silicon transistor 1955 First field effect transistor - FET
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1958
First integrated circuit (germanium), 1958 Jack S. Kilby, Texas Instruments Contained five components, three types: Transistors, resistors and capacitors
1958 Jack Kilby (Integrated circuit) 1959 Planar technology invented 1960 First MOSFET fabricated At Bell Labs by Kahng 1961 First commercial ICs Fairchild and Texas Instruments 1962 TTL invented 1963 First PMOS IC produced by RCA 1963 CMOS invented Frank Wanlass at Fairchild Semiconductor U. S. patent # 3,356,858
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c im pht trin ca mch tch hp (IC)

T l gi thnh/tnh nng ca IC gim 25% 30% mi nm. S chc nng, tc , hiu sut cho mi IC tng:
Kch thc wafer hp tng Mt tch hp tng nhanh
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nh lut MOORE
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2. Phn loi cu kin in t

2.1 Phn loi da trn c tnh vt l 2.2 Phn loi da trn chc nng x l tn hiu 2.3 Phn loi theo ng dng
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2.1 Phn loi da trn c tnh vt l

Linh kin hot ng trn nguyn l in t v hiu ng b mt: in tr bn dn, DIOT, BJT, JFET, MOSFET, in dung MOS IC t mt thp n mt siu c ln UVLSI Linh kin hot ng trn nguyn l quang in: quang tr, Photoiot, PIN, APD, CCD, h linh kin pht quang LED, LASER, h linh kin chuyn ho nng lng quang in nh pin mt tri, h linh kin hin th, IC quang in t Linh kin hot ng da trn nguyn l cm bin: h sensor nhit, in, t, ho hc; h sensor c, p sut, quang bc x, sinh hc v cc chng loi IC thng minh da trn c s t hp cng ngh IC truyn thng v cng ngh ch to sensor Linh kin hot ng da trn hiu ng lng t v hiu ng mi: cc linh kin c ch to bng cng ngh nano c cu trc siu nh: B nh mt in t, Transistor mt in t, ging v dy lng t, linh kin xuyn hm mt in t,
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2.2 Phn loi da trn chc nng x l tn hiu
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2.3 Phn loi theo ng dng
Linh kin th ng: R,L,C Linh kin tch cc: DIOT, BJT, JFET, MOSFET Vi mch tch hp IC: IC tng t, IC s, Vi x l Linh kin chnh lu c iu khin Linh kin quang in t: Linh kin thu quang, pht quang
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3. Gii thiu v vt liu in t

3.1. Cht cch in 3.2. Cht dn in 3.3. Vt liu t 3.4. Cht bn dn (Chng 3)
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C s vt l ca vt liu in t
L thuyt vt l cht rn L thuyt vt l c hc lng t L thuyt di nng lng ca cht rn L thuyt vt l bn dn
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L thuyt vt l cht rn
Vt liu ch to phn ln cc linh kin in t l loi vt liu tinh th rn Cu trc n tinh th: trong tinh th rn nguyn t c sp xp theo mt trt t nht nh, ch cn bit v tr v mt vi c tnh ca mt s t nguyn t ta c th on v tr v bn cht ha hc ca tt c cc nguyn t trong mu mt s vt liu ngi ta nhn thy rng cc sp xp chnh xc ca cc nguyn t ch tn ti chnh xc ti c vi nghn nguyn t. Nhng min c trt t nh vy c ngn cch bi b bin v dc theo b bin ny khng c trt t - cu trc a tinh th Tnh cht tun hon ca tinh th c nh hng quyt nh n cc tnh cht in ca vt liu
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L thuyt vt l c hc lng t
Trong cu trc nguyn t, in t ch c th nm trn cc mc nng lng gin on nht nh no - cc mc nng lng nguyn t Nguyn l Pauli: mi in t phi nm trn mt mc nng lng khc nhau Mt mc nng lng c c trng bi mt b 4 s lng t: n s lng t chnh: 1, 2, 3, 4. l s lng t qu o: 0, 1, 2, (n-1) {s, p, d, f, g, h} ml s lng t t: 0, 1, 2, 3, l ms s lng t spin: 1/2 n, l tng th mc nng lng ca nguyn t tng, e- c sp xp lp, phn lp c nng lng nh trc
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S hnh thnh vng nng lng (1)

to thnh vt liu gi s c N nguyn t ging nhau xa v tn tin li gn lin kt vi nhau: Nu cc NT cch xa nhau n mc c th coi chng l hon ton c lp vi nhau th v tr ca cc mc nng lng ca chng l hon ton trng nhau (mt mc trng chp) Khi cc NT tin li gn nhau n khong cch c Ao th chng bt u tng tc vi nhau khng th coi chng l c lp na. Kt qu l cc mc nng lng nguyn t khng cn trng chp na m tch ra thnh cc mc nng lng ri rc khc nhau. VD: mc 1s s to thnh 2N mc nng lng khc nhau Nu s lng cc NT rt ln v gn nhau th cc mc nng lng ri rc rt gn nhau v to thnh mt vng nng lng gn nh lin tc S tch mt mc nng lng NT ra thnh vng nng lng rng hay hp ph thuc vo s tng tc gia cc in t thuc cc NT khc nhau vi nhau
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C Si Ge Sn 6 14 32 50 1s22s22p2 1s22s22p63s23p2 1s22s22p63s23p63d104s24p2 1s22s22p63s23p63d104s24p64d105s25p2
(Si)
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Cc vng nng lng cho php xen k nhau, gia chng l vng cm Cc in t trong cht rn s in y vo cc mc nng lng trong cc vng cho php t thp n cao Xt trn lp ngoi cng: Vng nng lng c in y cc in t ha tr Vng ha tr Vng nng lng trng hoc cha in y trn vng ha tr - Vng dn Vng khng cho php gia Vng ha tr v Vng dn Vng cm Ty theo s phn b ca cc vng m tinh th rn c tnh cht in khc nhau: Cht cch in, Cht dn in, Cht bn dn
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Cu trc vng nng lng ca vt cht

E EC EG > 2 eV EV L trng Vng ho tr a- Cht cch in; b - Cht bn dn; EV Vng E dn in t E EC Vng dn EG < 2 eV EC EG = 0 EV Vng ho tr
c- Cht dn in
dn in ca ca vt cht cng tng theo nhit Cht bn dn: s mt 1 in t trong vng ha tr s hnh thnh mt l trng Cu trc vng nng lng ca kim loi khng c vng cm, di tc dng ca in trng ngoi cc e- t do c th nhn nng lng v di chuyn ln cc trng thi cao hn, s di chuyn ny to nn dng in
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Cc loi vt liu in t
Cht cch in (cht in mi) Cht dn in Vt liu t Cht bn dn (Chng 3)
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3.1 CHT CCH IN (CHT IN MI)
a. nh ngha L cht dn in km, l cc vt cht c in tr sut cao (107 1017.m) nhit bnh thng. Cht cch in gm phn ln cc vt liu v c cng nh hu c Tnh cht nh hng rt ln n cht lng ca linh kin b. Cc tnh cht ca cht in mi b.1 thm thu in tng i (hng s in mi - ) b.2 tn hao in mi (Pa) b.3 bn v in ca cht in mi (E.t) b.4 Nhit chu ng b.5 Dng in trong cht in mi (I) b.6 in tr cch in ca cht in mi
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b.1 Hng s in mi
Cd C0
(khng th nguyn)
Cd : in dung ca t in s dng cht in mi C0 : in dung ca t in s dng cht in mi l chn khng hoc khng kh biu th kh nng phn cc ca cht in mi. Cht in mi dng lm t in cn c hng s in mi () ln, cn cht in mi dng lm cht dn in c nh
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b.2 tn hao in mi (Pa)
l cng sut in tn hao lm nng cht in mi khi t n trong in trng, c xc nh thng qua dng in r. Pa = U 2Ctg Trong : U l in p t ln t in (V) C l in dung ca t in dng cht in mi (F) l tn s gc (rad/s) tg l gc tn hao in mi Nu tn hao in mi trong t in c bn l do in tr ca cc bn cc, dy dn v tip gip (vd: lp bc mng trong t mi ca v t gm) th tn hao in mi s tng t l vi bnh phng ca tn s:
Pa = U22C2R
Thc t, cc t in lm vic tn s cao cn phi c cc bn cc, dy dn v tip gip c trng bc gim in tr ca chng
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b3. bn v in ca cht in mi (E.t)
t mt cht in mi vo trong mt in trng, khi tng cng in trng ln qu mt gi tr gii hn th cht in mi mt kh nng cch in hin tng nh thng cht in mi Cng in trng tng ng vi im nh thng gi l bn v in ca cht in mi (E.t)
E .t
U .t = d
[KV / mm; KV / cm]
U.t - in p nh thng cht in mi d - dy ca cht in mi Hin tng nh thng cht in mi c th do nhit, do in v do qu trnh in ha
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b5. Dng in trong cht in mi (I)
Dng in chuyn dch IC.M (dng in cm ng): c to ra do qu trnh chuyn dch phn cc ca cc in tch lin kt trong cht in mi xy ra cho n khi t c trng thi cn bng Dng in r Ir : c to ra do cc in tch t do v in t pht x ra chuyn ng di tc ng ca in trng Nu dng r ln s lm mt tnh cht cch in ca cht in mi Dng in tng qua cht in mi s l: I = IC.M + Ir Sau khi qu trnh phn cc kt thc th qua cht in mi ch cn dng in r
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Phn loi v ng dng ca cht in mi
Cht in mi th ng (vt liu cch in v vt liu t in): l cc vt cht c dng lm cht cch in v lm cht in mi trong cc t in nh mi ca, gm, thu tinh, plyme tuyn tnh, cao su, sn, giy, bt tng hp, keo dnh,... Cht in mi tch cc l cc vt liu c c th iu khin c bng: in trng (VD: gm, thu tinh,..) C hc (cht p in nh thch anh) nh sng (cht hunh quang)
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3.2 CHT DN IN
a. nh ngha l vt liu c dn in cao. Tr s in tr sut ca n (khong 10-8 10-5 m) nh hn so vi cc loi vt liu khc Trong t nhin cht dn in c th l cht rn kim loi, cht lng kim loi nng chy, dung dch in phn hoc cht kh in trng cao b. Cc tnh cht ca cht dn in b.1 in tr sut b.2 H s nhit ca in tr sut () b.3 H s dn nhit : b.4 Cng thot ca in t trong kim loi b.5 in th tip xc
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b.1 in tr sut in tr ca vt liu trong mt n v thit din v chiu di:
=R
S [.m] , [.mm] , [.m] l
b.2 H s nhit ca in tr sut () biu th s thay i ca in tr sut khi nhit thay i 100C. Khi nhit tng th in tr sut cng tng ln theo quy lut:
t = 0 (1 + t)
b.3 H s dn nhit : [w/ (m.K)] l lng nhit truyn qua mt n v din tch trong mt n v thi gian khi gradien nhit bng n v
Q=
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T St l
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b.4 Cng thot ca in t trong kim loi: Cng thot ca kim loi biu th nng lng ti thiu cn cung cp cho in t ang chuyn ng nhanh nht 00K in t ny c th thot ra khi b mt kim loi. EW = EB - EF b.5 in th tip xc S chnh lch th nng EAB gia im A v B c tnh A B theo cng thc: VAB= EAB = EW2 - EW1
1 2
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Phn loi v ng dng ca cht dn in

Cht dn in c in tr sut thp Ag, Cu, Al, Sn, Pb v mt s hp kim: thng dng lm vt liu dn in Cht dn in c in tr sut cao - Hp kim Manganin, Constantan, Niken-Crm, Cacbon: thng dng ch to cc dng c o in, cc in tr, bin tr, cc dy may so, cc thit b nung nng bng in
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3.3 VT LIU T a. nh ngha Vt liu t l vt liu khi t vo trong mt t trng th n b nhim t b. Cc tnh cht c trng cho vt liu t b.1 T tr v t thm b.2 t thm tng i (r) b.3 ng cong t ha
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Phn loi v ng dng ca vt liu t
Vt liu t mm c t thm cao v lc khng t nh ( ln v Hc nh) lm li bin p, nam chm in, li cun cm Vt liu t cng c t thm nh v lc khng t cao Theo ng dng th vt liu t cng c 2 loi: - Vt liu ch to nam chm vnh cu. - Vt liu t ghi m, ghi hnh, gi m thanh, v.v.. Theo cng ngh ch to th chia vt liu t cng thnh: - Hp kim thp c ti thnh Martenxit (l vt liu n gin v r nht ch to nam chm vnh cu) - Hp kim l t cng - Nam chm t bt - Ferit t cng: Ferit Bari (BaO.6Fe2O3) ch to nam chm dng tn s cao - Bng, si kim loi v khng kim loi dng ghi m thanh
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4. Cc phn mm EDA h tr mn hc
OrCAD: Phn tch, m phng cu kin v mch in t dng Pspice. Ci t cc tool sau: + OrCAD Capture CIS + OrCAD Capture CIS Option + PSpice A/D + PSpice Optimizer + PSpice Advanced Analysis + SPECCTRA 6U for OrCAD (Hng dn s dng Pspice: Tutorial on Pspice (McGill), Pspice Tutorial (UIUC), CircuitMaker User Manual ) Multisim (R 7)-Electronic Workbench, Circuit Maker, Proteus TINA 7 (Sinh vin nn s dng Tina/ Circuit Maker/ OrCAD (R 9.2) thc hnh phn tch, m phng cu kin v mch in t nh)
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Chng 2- Cu kin th ng
1. in tr (Resistor) 2. T in (Capacitor) 3. Cun cm (Inductor) 4. Bin p (Transformer )
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1. in tr (Resistors)
1.1. nh ngha 1.2. Cc tham s k thut c trng ca in tr 1.3. K hiu ca in tr 1.4 Cch ghi v c tham s trn thn in tr 1.5. in tr cao tn v mch tng ng 1.6. Phn loi
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1.1 nh ngha
in tr - phn t c chc nng ngn cn dng in trong mch Mc ngn cn dng in c c trng bi tr s in tr U R= I n v o: , m, , k, M, G, T ng dng: nh thin cho cc cu kin bn dn, iu khin h s khuych i, c nh hng s thi gian, phi hp tr khng, phn p, to nhit Kt cu n gin ca mt in tr thng:
M chp v chn in tr
V bc
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Li
Vt liu cn in
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CU KIN IN T & QUANG IN T 1.2 Cc tham s k thut v c tnh ca in tr

Tr s in tr v dung sai H s nhit ca in tr Cng sut tiu tn danh nh Tp m ca in tr
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a. Tr s in tr v dung sai
Cng thc tnh tr s ca in tr:
- in tr sut ca v/liu dy dn cn in l - chiu di dy dn S- tit din ca dy dn
l R = ( ) S
Dung sai hay sai s (Resistor Tolerance): biu th mc chnh lch ca tr s thc t ca in tr so vi tr s danh nh v c tnh theo % R t . t R d .d 100% R d .d 5 cp chnh xc ca in tr (tolerance levels):
Cp 005: sai s 0,5 % Cp 01: sai s 1 %
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Cp I: sai s 5 % Cp II: sai s 10 % Cp III: sai s 20 %

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b. H s nhit ca in tr - TCR TCR (temperature coefficient of resistance): biu th s thay i tr s ca in tr theo nhit
1 R TCR = . .106 R T [ppm/ C]
0
R =
R TCR.T 6 10
TCR c th m, bng 0 hoc dng ty loi vt liu:

Kim loi thun thng c TCR >0 Mt s hp kim (constantin, manganin) c TCR = 0 Carbon, than ch c TCR <0
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c. Cng sut tiu tn danh nh ca in tr (Pt.t max ) Pt.t max: cng sut in cao nht m in tr c th chu ng c trong iu kin bnh thng, lm vic trong mt thi gian di khng b hng Pt.t.max = R.I2 max
2 U max = R
[W ]
Pt.t.max tiu chun cho cc in tr dy qun nm trong khong t 1W n 10W hoc cao hn nhiu. ta nhit cn yu cu din tch b mt ca in tr phi ln cc in tr cng sut cao u c kch thc ln Cc in tr than l cc linh kin c cng sut tiu tn danh nh thp, khong 0,125W; 0,25W; 0,5W; 1W v 2W
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d. Tp m ca in tr Tp m ca in tr gm:
Tp m nhit (Thermal noise): sinh ra do s chuyn ng ca cc ht mang in bn trong in tr do nhit
E RMS = 4.k .R.T .f

ERMS = the Root-Mean-Square hay in p hiu dng k = Hng s Boltzman (1,38.10-23) T = nhit tnh theo Kelvin (nhit phng = 27C = 300K) R = in tr f = Bng thng ca mch tnh theo Hz (f = f2-f1)
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Tp m dng in (Current Noise): sinh do cc thay i bn trong ca in tr khi c dng in chy qua n
ERMS = U DC .10
NI / 20
f2 log f 1
U noise NI = 20 log10 U DC
Trong : + NI: Noise Index (H s nhiu) + UDC: in p khng i t trn 2 u in tr + Unoise: in p tp m dng in + f1 > f2: khong tn s lm vic ca in tr Mc tp m ph thuc ch yu vo loi vt liu cn in. Bt than nn c mc tp m cao nht. Mng kim loi v dy qun c mc tp m rt thp.
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CU KIN IN T & QUANG IN T 1.3 K hiu ca in tr trn cc s mch

in tr thng
in tr cng sut 0,25W 1W 0,5W 10 W
Bin tr
Sn nhm
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CU KIN IN T & QUANG IN T 1.4 Cch ghi v c tham s trn thn in tr (1)
Ghi trc tip: ghi y cc tham s chnh v n v o trn thn ca in tr, vd: 220K 10%, 2W Ghi theo quy c: c rt nhiu cc quy c khc nhau. Xt mt s quy c thng dng:
Quy c n gin: Khng ghi n v m, R (hoc E) = , M = M, K = K V d: 2M=2M, 0K47 =0,47K = 470, 100K = 100 K, 220E = 220, R47 = 0,47 Quy c theo m: M ny gm cc ch s v mt ch ci ch % dung sai. Trong cc ch s th ch s cui cng ch s s 0 cn thm vo. Cc ch ci ch % dung sai qui c gm: F = 1 %, G = 2 %, J = 5 %, K = 10 %, M = 20 % Vd: 103F = 10000 1% = 10K 1% 153G = 4703J =
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Mu Gi tr 0 1 2 3 4 5 6 7 8 9 0,1 / 5% 0,001 / 10% - / 20% Trang 12
1.4 Cch ghi v c tham s trn thn in tr (2)

Quy c mu: Loi 4 vng mu:
1 2 3 4
en Nu Cam Vng Lc Lam
(Nu-en--Khng mu) = Loi 5 vch mu:

1 2 3 4 5
Tm Xm Trng Vng kim
(Nu-cam-vng--Bch kim) =
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Bch kim Khng mu
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CU KIN IN T & QUANG IN T 1.5 in tr cao tn v mch tng ng

Khi lm vic tn s cao in cm v in dung k sinh l ng k, S tng ng ca in tr tn s cao nh sau:
Tn s lm vic hiu dng ca in tr c xc nh sao cho s sai khc gia tr khng tng ng ca n so vi gi tr in tr danh nh khng vt qu dung sai c tnh tn s ca in tr ph thuc vo cu trc, vt liu ch to... Kch thc in tr cng nh th c tnh tn s cng tt, in tr cao tn thng c t l kch thc l t 4:1 n 10:1
BI GING MN
CU KIN IN T & QUANG IN T 1.6 Phn loi in tr (1)

in tr c tr s c nh in tr c tr s thay i a. in tr c nh Thng c phn loi theo vt liu cn in in tr than tng hp (than nn): cu trc t hn hp bt cacbon (bt than ch) c ng thnh khun, kch thc nh v gi thnh rt r in tr than nhit gii hoc than mng (mng than tinh th) in tr dy qun in tr mng hp kim, mng oxit kim loi hoc in tr ming. in tr cermet (gm kim loi) Ngoi ra cn phn loi theo kt cu u ni phc v lp rp; phn loi theo loi v bc dng nhng mi trng khc nhau; phn loi theo loi ng dng.
BI GING MN
CU KIN IN T & QUANG IN T 1.6 Phn loi in tr (2)

b. Bin tr Dng kim sot dng cng sut ln dng dy qun (t gp trong cc mch in tr) Chit p: so vi in tr c nh th chit p c thm mt kt cu con chy gn vi mt trc xoay iu chnh tr s in tr. Con chy c kt cu kiu xoay (chit p xoay) hoc theo kiu trt (chit p trt). Chit p c 3 u ra, u gia ng vi con trt cn hai u ng vi hai u ca in tr
a. loi kim sot dng

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b. loi chit p
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BI GING MN

Mt s in tr c bit
in tr nhit: Tecmixto
t0 Tecmixto
in tr Varixto:
VDR
in tr Mgm: c tr s in tr t 108 1015 in tr cao p: in tr chu c in p cao 5 KV 20 KV in tr chun: cc in tr dng vt liu dy qun c bit c n nh cao Mng in tr: l mt loi vi mch tch hp c 2 hng chn. Mt phng php ch to l dng cng ngh mng mng, trong dung dch cht dn in c lng ng trong mt hnh dng theo yu cu.
BI GING MN
2. T in (Capacitors)
2.1. nh ngha 2.2. Cc tham s k thut c trng ca t in 2.3. K hiu ca t in 2.4 Cch ghi v c tham s trn t in 2.5. S tng ng 2.6. Phn loi
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BI GING MN
CU KIN IN T & QUANG IN T 2.1 nh ngha

T in l linh kin dng cha in tch. Mt t in l tng c in tch bn cc t l thun vi hiu in th t trn n theo cng thc: Q = C.U [culng] Bn cc in dung ca t in C [F] Chn t Q r 0 .S Cht in mi C= = V bc
n v o C: F, F, nF, pF r - hng s in mi ca cht in mi 0 - hng s in mi ca khng kh hay chn khng
1 = 8,84.10 12 36 .10 9 S d/tch hu dng ca bn cc [m2]; d kh/cch gia 2 bn cc [m]
0 =
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BI GING MN
CU KIN IN T & QUANG IN T 2.2 Cc tham s k thut c trng ca t in

Tr s dung lng v dung sai in p lm vic H s nhit Dng in r S phn cc
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BI GING MN

a. Tr s dung lng (C) Dung sai ca t in: l tham s ch chnh xc ca tr s dung lng thc t so vi tr s danh nh ca n Dung sai ca t in:
C t . t C d .d .100% C d .d
b. in p lm vic: in p cc i c th cung cp cho t in hay cn gi l "in p lm vic mt chiu, nu qu in p ny lp cch in s b nh thng v lm hng t
BI GING MN

c. H s nhit ca t in Mi mt loi t in chu mt nh hng vi khong nhit do nh sn xut xc nh. Khong nhit tiu chun thng t: -200C n +650C -400C n +650C -550C n +1250C nh gi s thay i ca tr s in dung khi nhit thay i ngi ta dng h s nhit ca t din TCC
1 C 6 TCC = .10 C T
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[ppm/ 0 C]
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BI GING MN

d. Dng in r
Do cht cch in t gia 2 bn cc nn s c mt dng in r rt b chy qua gia 2 bn cc ca t in. Tr s Ir ph thuc vo in tr cch in ca cht in mi T in mng Plastic c in tr cch in cao hn 100000 M, cn t in in gii th dng in r c th ln ti vi A khi in p t vo 2 bn cc ca t ch 10 V i vi in p xoay chiu, tn hao cng sut trong t c th hin qua h s tn hao D: 1 P D = = th Q Ppk T tn hao nh dng s tng ng ni tip T tn hao ln dng s tng ng song song
BI GING MN

e. S phn cc Cc t in in gii cc chn t thng c nh du cc tnh dng (du +) hoc m (du -) gi l s phn cc ca t in Khi s dng phi u t vo mch sao cho ng cc tnh ca t. Nh vy ch s dng loi t ny vo nhng v tr c in p lm vic khng thay i cc tnh
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BI GING MN
CU KIN IN T & QUANG IN T 2.3 K hiu ca t

+ +
T thng
T in gii
T c in dung thay i
T in ln thng c tham s in dung ghi trc tip, t in nh thng dng m: XYZ = XY * 10Z pF
BI GING MN
CU KIN IN T & QUANG IN T 2.4 Cch c v ghi tr s trn t

Hai tham s quan trng nht thng c ghi trn thn t in l tr s in dung (km theo dung sai sn xut) v in p lm vic (in p ln nht). C 2 cch ghi c bn: Ghi trc tip: cch ghi y cc tham s v n v o ca chng. Cch ny ch dng cho cc loi t in c kch thc ln. V d: trn thn mt t mi ca c ghi: 5.000PF 20% 600V Ghi gin tip theo qui c: + Qui c s: Cch ghi ny thng gp cc t Plystylen V d 1: Trn thn t c ghi 47/ 630: tc gi tr in dung l 47 pF, in p lm vic mt chiu l 630 Vdc. V d 2: Trn thn t c ghi 0.01/100: tc l gi tr in dung l 0,01 F v in p lm vic mt chiu l 100 Vdc. + Quy c theo m: Ging nh in tr: 123K/50V =12000 pF 10% v in p lm vic ln nht 50 Vdc
BI GING MN

+Quy c theo mu: Loi c 4 vch mu:
Hai vch u l s c ngha thc ca n Vch th ba l s nhn (n v pF) hoc s s 0 cn thm vo Vch th t ch in p lm vic.
Loi c 5 vch mu:

Ba vch mu u ging nh loai 4 vch mu Vch mu th t ch % dung sai Vch mu th 5 ch in p lm vic
TCC 1 2 3 4
T hnh ng
1 2 3 4 5
T hnh ko
1 3 2 4 +
T Tantan
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BI GING MN

2.5 S tng ng ca t
L RS RP C RL C b. S tng ng song song RS C
a. S tng ng tng qut
c. s tng ng ni tip
L - l in cm ca u ni, dy dn ( tn s thp L 0) RS - l in tr ca u ni, dy dn v bn cc (RS thng rt nh) RP - l in tr r ca cht cch in v v bc. RL, RS - l in tr r ca cht cch in C - l t in l tng
BI GING MN
CU KIN IN T & QUANG IN T 2.6 Phn loi t in

T in c tr s in dung c nh T in c tr s in dung thay i c a. T in c tr s in dung c nh:
T giy: cht in mi l giy, thng c tr s in dung khong t 500 pF n 50 F v in p lm vic n 600 Vdc. T giy c gi thnh r nht so vi cc loi t c cng tr s in dung. u im: kch thc nh, in dung ln. Nhc im: Tn hao in mi ln, TCC ln. T mng cht do: cht in mi l cht do, c in tr cch in ln hn 100000 M. in p lm vic cao khong 600V. T mng cht do nh hn t giy nhng t hn. Gi tr in dung ca t tiu chun nm trong khong t 5 pF n 0,47 F
BI GING MN

T mi ca: cht in mi l mi ca, t mi ca tiu chun c gi tr in dung khong t 1 pF n 0,1 F v in p lm vic cao n 3500V Nhc im: gi thnh ca t cao. u im:Tn hao in mi nh, in tr cch in rt cao, chu c nhit cao. T gm: cht in mi l gm. Gi tr in dung ca t gm tiu chun khong t 1 pF n 0,1 F, vi in p lm vic mt chiu n 1000 Vdc. c im ca t gm l kch thc nh, in dung ln, c tnh n nh rt tt, c th lm vic lu di m khng lo ho. T du: cht in mi l du. T du c in dung ln, chu c in p cao C tnh nng cch in tt, c th ch to thnh t cao p Kt cu n gin, d sn xut
BI GING MN

T in gii nhm: Cu trc c bn ging t giy. Hai l nhm mng lm hai bn cc t cch nhau bng lp vi mng c tm cht in phn (dung dch in phn), sau c qun li v cho vo trong mt khi tr bng nhm bo v. Thng lm vic vi in p mt chiu > 400 Vdc, trong trng hp ny in dung khng qu 100 F. in p lm vic thp v dng r tng i ln T tantan (cht in gii Tantan): l mt loi t in gii. Bt tantan c c c thnh dng hnh tr, sau c nhn chm vo mt hp cha cht in phn. Dung dch in phn s thm vo cht tantan. Khi t mt in p mt chiu ln hai chn t th mt lp oxit mng c to thnh vng tip xc ca cht in phn v tantan. T tantan c in p lm vic ln n 630 Vdc nhng gi tr in dung ch khong 3,5 F.
BI GING MN

b. T in c tr s in dung thay i
Loi a dng cn gi l t xoay: T xoay c dng lm t iu chnh thu sng trong cc my thu thanh, v.v.. T xoay c th c 1 ngn hoc nhiu ngn. Mi ngn c cc l ng xen k, i nhau vi cc l tnh (l gi c nh) ch to t nhm. Cht in mi c th l khng kh, mi ca, mng cht do, gm... T vi iu chnh (Trimcap) c nhiu kiu. Cht in mi cng dng nhiu loi nh khng kh, mng cht do, thu tinh hnh ng... Trong cc loi Trimcap chuyn dng, thng gp nht l loi cht in mi gm. thay i tr s in dung ta thay i v tr gia hai l ng v l tnh. Khong iu chnh ca t t 1,5 pF n 3 pF, hoc t 7 pF n 45 pF v t 20 pF n 120 pF tu theo h s nhit cn thit
BI GING MN
CU KIN IN T & QUANG IN T ng dng

T lin lc: ngn cch c dng mt chiu gia mch ny vi mch khc nhng li dn dng in xoay chiu i qua T thot: dng trit b tn hiu khng cn thit t mt im trn mch xung t (v d: tp m) T cng hng: dng lm phn t dung khng trong cc mch cng hng LC T lc: dng trong mch lc. Cc t trong nhm a dng dng lin lc, lc ngun in, thot tn hiu ... ngoi ra t cn dng tr nng lng, nh thi... Do c tnh np in v phng in, t cn dng to mch nh gi, mch pht sng rng ca, mch vi phn v tch phn.
BI GING MN

Mt s hnh nh ca T in
T ho (Electrolytic Capacitors)
T Tantan (Tantalum Capacitors)
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BI GING MN

T gm ( Ceramic Capacitors ) T gm nhiu tng (Multilayer Ceramic Capacitors )
T Mica
T film nha (Polystyrene Film Capacitors)
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BI GING MN

Bin dung
T gm dn b mt T Tantan T ha
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BI GING MN
3. Cun cm (Inductor)
3.1. nh ngha 3.2 K hiu ca cun cm 3.3 Cc tham s k thut c trng ca cun cm 3.4 Cch ghi v c tham s trn cun cm 3.5 Mch tng ng 3.6 Phn loi
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BI GING MN
3.1 nh ngha
Cun cm l phn t sinh ra hin tng t cm khi dng in chy qua n bin thin. Khi dng in qua cun cm bin thin s to ra t thng thay i v mt sc in ng c cm ng ngay trong cun cm hoc c th cm ng mt sc in ng sang cun cm k cn vi n
Mc cm ng trong mi trng hp ph thuc vo t cm ca cun cm hoc s h cm gia hai cun cm. Cc cun cm c cu trc c gi tr cm ng xc nh. Cun cm cng c th u ni tip hoc song song. Ngay c mt on dy dn ngn nht cng c s cm ng.
BI GING MN
3.2 K hiu ca cun cm

L Cun dy li Ferit L Cun dy li st t L Cun dy li khng kh
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BI GING MN
CU KIN IN T & QUANG IN T 3.3 Cc tham s k thut c trng ca cun cm

t cm (L) H s phm cht ca cun cm (Q) Tn s lm vic gii hn (fg.h)
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BI GING MN

a. t cm (L)
Trong :
S L = .N . l
2
S - tit din ca cun dy (m2) N - s vng dy l - chiu di ca cun dy (m) - t thm tuyt i ca vt liu li (H/ m); = r. 0 n v o: ...H, mH, H t thm tuyt i ca mt s loi vt liu: Chn khng: 4 x 10-7 H/m Ferrite T38 1.26x10-2 H/m Khng kh: 1.257x10-6 H/m Ferrite U M33 9.42x10-4 H/m Nickel 7.54x10-4 H/m Iron 6.28x10-3 H/m Silicon GO steel 5.03x10-2 H/m supermalloy 1.26 H/m
GING VIN: ThS. Trn Thc Linh B MN: K thut in t - KHOA KTT1 Trang 40
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BI GING MN

Dung sai ca t cm: l tham s ch chnh xc ca t cm thc t so vi tr s danh nh ca n Lt .t Ld .d .100% Ld .d Mt cun cm l tng khng c tn hao khi c dng in chy qua, thc t lun c tn hao do cng sut in tn hao lm nng cun dy. Tn hao ny biu th bi in tr tn hao RS
b. H s phm cht ca cun cm (Q)

Q dng nh gi cht lng ca cun cm. Cun cm tn hao nh dng s tng ng ni tip, cun cm tn hao ln dng s tng ng song song. L L RS Rp
1 Ppk X L L Qnt = = = = D Pth RS RS

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1 Ppk RP R p = = Q// = = D Pth X L L

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BI GING MN

c. Tn s lm vic gii hn (fg.h)
Khi tn s lm vic nh, b qua in dung phn tn gia cc vng dy ca cun cm, nhng khi lm vic tn s cao in dung ny l ng k Do tn s cao cun cm tr thnh mt mch cng hng song song. Tn s cng hng ca mch cng hng song song ny gi l tn s cng hng ring ca cun dy f0 Nu cun dy lm vic tn s > tn s cng hng ring ny th cun dy mang dung tnh nhiu hn. Do tn s lm vic cao nht ca cun dy phi thp hn tn s cng hng ring ca n.
f lv max < f gh = f 0 =
1 2 LC
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BI GING MN

3.4 Cch ghi v c tham s trn cun cm
Ghi trc tip: cch ghi y cc tham s t cm L, dung sai, loi li cun cm Cch ny ch dng cho cc loi cun cm c kch thc ln. Ghi gin tip theo qui c : Quy c theo mu: Dng cho cc cun cm nh
1,2,3,4
Vng mu 1: ch s c ngha th nht hoc chm thp phn Vng mu 2: ch s c ngha th hai hoc chm thp phn Vng mu 3: ch s 0 cn thm vo, n v o l H Vng mu 4: ch dung sai %.
BI GING MN
3.5 Phn loi v ng dng

Da theo ng dng: Cun cng hng cun cm dng trong cc mch cng hng LC Cun lc cun cm dng trong cc b lc mt chiu. Cun chn dng ngn cn dng cao tn, v.v.. Da vo loi li ca cun cm: Cun dy li khng kh: Loi cun dy khng li hoc cun trn cc ct khng t tnh, thng dng l cc cun cng hng lm vic tn s cao v siu cao. Cc yu cu chnh: in cm phi n nh tn s lm vic, Q cao, in dung ring nh, h s nhit ca in cm thp
BI GING MN

Cun cm li st bi: Dng bt st nguyn cht trn vi cht dnh kt khng t tnh l li cun cm, thng dng tn s cao v trung tn. Cun dy li st bi c tn tht thp, c bit l tn tht do dng in xoy ngc, v t thm thp hn nhiu so vi loi li st t Cun cm li Ferit : thng l cc cun cm lm vic tn s cao v trung tn. Li Ferit c nhiu hnh dng khc nhau nh: thanh, ng, hnh ch E, ch C, hnh xuyn, hnh ni, ht u,v.v.. Dng li hnh xuyn d to in cm cao, tuy vy li d b bo ha t khi c thnh phn mt chiu Cun cm li st t: Li ca cun cm thng hp cht st silic, hoc st- niken . y l cc cun cm lm vic tn s thp. Dng dy ng c trng men cch in qun thnh nhiu lp c cch in gia cc lp v c tm chng m
BI GING MN
4. Bin p (Transformer)
4.1. nh ngha 4.2. Cc tham s k thut ca bin p 4.3. K hiu ca bin p 4.6. Phn loi v ng dng
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BI GING MN
4.1. nh ngha
Bin p l thit b gm 2 hay nhiu cun dy ghp h cm vi nhau bin i in p. Cun dy u vo ngun in gi l cun s cp, cc cun dy khc u vo ti gi l cun th cp
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BI GING MN
Nguyn l hot ng ca bin p

Hot ng da theo nguyn l cm ng in t H s t cm ca cun s cp, th cp:
L1 = .N12
S 2 S L 2 = .N 2 l l
Khi dng in I1 bin thin to ra t thng bin thin, t thng ny lin kt sang cun th cp v to ra in p cm ng eL trn cun th cp theo h s t l - h s h cm M. Lng t thng lin kt gia cun s cp sang cun th cp c nh gi bng h s ghp bin p K
BI GING MN
4.2. Cc tham s k thut ca bin p

H s ghp bin p K in p cun s cp v cun th cp Dng in s cp v dng in th cp Hiu sut ca bin p
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BI GING MN
a. H s ghp bin p K
K = M L1 L 2
M - h s h cm ca bin p L1 v L2 - h s t cm ca cun s cp v cun th cp tng ng Khi K = 1 l trng hp ghp l tng, khi ton b s t thng sinh ra do cun s cp c i qua cun th cp v ngc li Thc t, khi K 1 gi l hai cun ghp cht K<<1 gi l hai cun ghp lng
BI GING MN
b. in p cun s cp v cun th cp
in p cm ng cun s cp v th cp quan h vi nhau theo t s: N
U2 N N =K 2 2 U1 N1 N1
N1
:H s bin p
N1 = N2 th U1 = U2 bin p 1 : 1 N2 > N1 th U2 > U1 bin p tng p N2 < N1 th U2 < U1 bin p h p

BI GING MN
c. Dng in s cp v dng in th cp d. Hiu sut ca bin p

Quan h gia dng in cun s cp v cun th cp:
I1 U 2 N N = =K 2 2 I 2 U1 N1 N1
Hiu sut ca bin p l t s gia cng sut ra v cng sut vo tnh theo %:
P2 P2 .100% = .100% P1 P2 + Ptn tht
P1 - cng sut a vo cun s cp P2 - cng sut thu c cun th cp Ptn tht - CS in mt mt do tn tht ca li & ca dy cun
gim tn hao nng lng trong li st t, dy ng v t thng r ngi ta dng loi li lm t cc l st t mng, c qut sn cch in, dng dy ng c tit din ln & ghp cht
BI GING MN
4.3. K hiu ca bin p
a. Bin p m tn
b. Bin p ngun li st v bin p t ngu
c. Bin p cao tn khng li
d. Bin p li Ferit
e. Bin p trung tn
BI GING MN
4.4 Phn loi v ng dng

ng dng:
bin i in p xoay chiu dng cch ly gia mch cc mch in (dng loi bin p c hai cun dy s cp v th cp cch in vi nhau) bin i tng tr: dng bin p ghp cht bin p cao tn: dng truyn tn hiu c chn lc (dng loi ghp lng
Phn loi theo ng dng:

Bin p cng hng Bin p cp in (bin p ngun) Bin p m tn Bin p xung
BI GING MN
Chng 3- Cht bn dn
(Semiconductor)
nh ngha cht bn dn Cu trc mng tinh th cht bn dn Cht bn dn thun Cht bn dn khng thun Dng in trong cht bn dn dn in ca cht bn dn
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BI GING MN
1. nh ngha
Cht bn dn l vt cht c in tr sut nm gia tr s in tr sut ca cht dn in v cht in mi khi nhit phng, = 10-4 107 .m Cht bn dn l cht m trong cu trc di nng lng c rng vng cm l 0<EG<2eV. Cht bn dn trong t nhin: Bo (B), Indi (In), Gali (Ga) nhm 3, Silic (Si), Gecmani (Ge) thuc nhm 4, Asen (As), P, Sb (Antimony) thuc nhm 5, Selen (Se), lu hunh (S) nhm 6,... hoc hp cht nh clorua ng (CuCl), Asenic Canxi CaAs, Oxit ng CuO, ... Trong k thut in t hin nay s dng mt s cht bn dn c cu trc n tinh th. Quan trng nht l hai nguyn t Gecmani v Silic. c im ca cu trc mng tinh th ny l dn in ca n rt nh khi nhit thp v s tng theo ly tha vi s tng ca nhit v tng gp bi khi c trn thm t tp cht. Do c im c bn ca cht bn dn l dn in ph thuc nhiu vo nhit mi trng v nng tp cht, ngoi ra cn ph thuc vo nh sng, bc x ion ha, ...
BI GING MN
2. Cu trc mng tinh th cht bn dn n Si

Mi nguyn t Si lin kt vi 4 nguyn t bn cnh
2.35 A
o
o
5.43 A
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BI GING MN
Cu trc mng tinh th ca cht bn dn ghp
Ga
As
Cht bn dn ghp: Hp cht ca cc nguyn t thuc phn nhm chnh nhm III v phn nhm chnh nhm V: GaAs, GaP, GaN, Chng c ng dng quan trng trong cc cu kin quang in v IC tc cao
BI GING MN
3. Cht bn dn thun (Intrinsic semiconductor)

Cht bn dn m mi nt ca mng tinh th ca n ch c nguyn t ca mt loi nguyn t, v d nh cc tinh th Ge (gecmani) Si (silic) nguyn cht ... VD: tinh th Si, EG= 1,1eV (ti nhit 3000K)
Si +4 Si +4 Si +4 Si +4 Si +4 Di E dn in t EC EV L trng Di ho tr
Si
+4
Si
EG < 2 eV
+4
Si
+4
Si
+4
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BI GING MN
S to thnh l trng v in t t do
nhit phng mt s lin kt cng Si ha tr b ph v to ra in t t do v +4 l trng L trng cng c kh nng dn in Si nh in t t do +4 Bn dn thun c nng ht dn l L trng v nng ht dn in t bng trng Si nhau: p = n = pi = ni +4 dn in ca cht bn dn :
n - linh ng ca in t t do p - linh ng ca l trng q in tch ca in t q=1,6.10-19C
Si +4 Si +4
Si
+4
Si
+4
Si
+4
Si
in t t do
+4
= (n. n + p. p ).q
J mt dng in khi cht bn dn t trong in trng ngoi E:

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J = (n. n + p. p ).q.E = .E
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BI GING MN
Cc thut ng
Nng in t t do trong cht bn dn (Electron Concentration): n [cm-3] - s lng in t t do trong mt n v th tch cht bn dn (ni, nn, np) Nng l trng trong cht bn dn (Hole Concentration):p [cm-3] - s lng l trng trong mt n v th tch cht bn dn (pi, pn, pp) linh ng ca in t t do (Electron Mobility): n[cm2/(V.s)] Tham s xc nh mc phn tn ca in t trong cht bn dn, t l thun vi vn tc khuych tn ca in t v cng trng in t, cng nh t l gia nng in t v dn in ca cht bn dn linh ng ca l trng (Hole Mobility) : p[cm2/(V.s)] - Tham s xc nh mc phn tn ca l trng trong cht bn dn, t l thun vi vn tc khuych tn ca l trng v cng trng in t, cng nh t l gia nng l trng v dn in ca cht bn dn dn in (Electrical conductivity): [.m]-1 - tham s o kh nng dn dng in thng qua mt n v vt liu, = 1/
BI GING MN
Qu trnh to ht ti in v qu trnh ti hp
Qu trnh to ra ht ti in trong cht bn dn thun: do nng lng nhit thermal generation do nng lng quang hc optical generation Qu trnh ti hp gia in t t do v l trng v gii phng nng lng 2 theo cch: To ra nhit lng lm nng cht bn dn: thermal recombinationTi hp to nhit Pht x ra photon nh sng : optical recombination- Ti hp pht quang Optical recombination rt him xy ra trong trong cht bn dn thun Si, Ge m ch yu xy ra trong cc loi vt liu bn dn ghp Qu trnh to v ti hp lin tc xy ra trong cht bn dn, v t trng thi cn bng khi tc ca 2 qu trnh bng nhau
BI GING MN

- Tc to ht ti in ph thuc vo T nhng li c lp vi n v p nng ca in t t do v ca l trng :
G = Gthermal (T ) + Goptical
- Trong khi tc ti hp li t l thun vi c n v p
R np
- Trng thi n nh xy ra khi tc to v ti hp cn bng
G=R
np = f (T )
- Nu trong trng hp khng c cc ngun quang v ngun in trng ngoi, trng thi n nh c gi l trng thi cn bng nhit thermal equilibrium
np = n (T )
2 i
BI GING MN
Hm phn b Fermi-Dirac
Xt mt h gm nhiu ht ging ht nhau c th nm trn nhiu mc nng lng khc nhau hm phn b, bi v xt cc tnh cht khc nhau ca h trc ht ta cn phi bit cc ht ny phn b theo cc mc nng lng trn nh th no? Xt h gm N in t t do nm trng thi cn bng nhit ti nhit T. Phn b cc in t tun theo nguyn l loi tr Pauli. Tm phn b ca cc in t theo cc mc nng lng? p dng nguyn l nng lng ti thiu: xc sut mt h gm N ht ging ht nhau nm trong trng thi nng lng E t l nghch vi E theo hm m exp, c th l: PN(E) ~ exp(-E/kT)
BI GING MN
Hm phn b Fermi-Dirac (1)

Xc sut mc nng lng E [eV] b in t lp y ti nhit T tun theo hm phn b Fermi- Dirac:
f (E ) = 1 E EF exp +1 KT
f(E) T=00K
K: Hng s Boltzmann (eV/ 0K) K= 8,6210-5 eV/0K T - Nhit o bng 0K EF - Mc Fermi (eV)
0,5
T=3000K
T=25000K
0 -1 0 0,2 1 (E-EF)
EF - mc nng lng Fermi l mc nng lng ln nht cn b e- lp y ti T=00 K

BI GING MN
Hm phn b Fermi-Dirac (2)

1 f (E ) = E EF exp +1 KT
E Vng dn T = 10000K T = 3000K
T = 00K E > EF => f(E) = 0 E < EF => f(E) = 1 T > 00K (T=3000K; KT=26.10-3eV) E - EF >> KT f ( E ) e
( EF E ) KT KT
EC EF EV 0
F
T= 00K
EG
Vng ho tr 0.5 1 f(E)
E - EF << - KT f ( E ) 1 e
( E EF )
1 f ( EF ) = 2
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EC [eV]- y ca vng dn EV [eV]- nh ca vng ha tr EF [eV]- Mc nng lng Fermi

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4. Cht bn dn khng thun

Cht bn dn m mt s nguyn t nt ca mng tinh th ca n c thay th bng nguyn t ca cht khc gi l cht bn dn khng thun. C hai loi cht bn dn khng thun: Cht bn dn khng thun loi N gi tt l Bn dn loi N Cht bn dn khng thun loi P gi tt l Bn dn loi P
Donors: P, As, Sb Acceptors: B, Al, Ga, In
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a. Cht bn dn loi N (1)

Thm mt t tp cht l nguyn t thuc nhm 5 (As, P, Sb) vo cht bn dn thun Ge (Si). Trong nt mng nguyn t tp cht s a 4 in t trong 5 in t ha tr ca n tham gia vo lin kt cng ha tr vi 4 nguyn t Ge (hoc Si) bn cnh; cn in t th 5 s tha ra v lin kt ca n trong mng tinh th l rt yu, nhit phng cng d dng tch ra tr thnh in t t do trong tinh th v nguyn t tp cht cho in t tr thnh cc ion dng c nh
Si + 4 Si + 4 Si + 4
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E Si + 4 + 5 + 4 Si e5 Si + 4 + 4 + 4 EC ED EV Vng dn
0,01e V
Sb
Si
Si
Mc cho EG Vng ho tr
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a. Cht bn dn loi N (2)

Nng in t t do trong cht bn dn loi N tng nhanh nhng tc ti hp tng nhanh nn nng l trng gim xung nh hn nng c th c trong bn dn thun Trong cht bn dn loi N, nng ht dn in t (nn) nhiu hn nhiu nng l trng pn v in t c gi l ht dn a s, l trng c gi l ht dn thiu s. nn >> pn nn=Nd+pn Nd
ni2 ni2 = pn = nn N d
Nd Nng ion nguyn t tp cht cho (Donor)
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b. Cht bn dn loi P
Thm mt t tp cht l nguyn t thuc nhm 3(In, Bo, Ga) vo cht bn dn thun Ge (Si). Trong nt mng, nguyn t tp cht ch c 3 in t ha tr a ra to lin kt cng ha tr vi 3 nguyn t Ge (Si) bn cnh, mi lin kt th 4 trng v to thnh mt l trng. in t ca mi lin kt gn c th nhy sang hon chnh mi lin kt th 4 cn trng . Nguyn t tp cht va nhn thm in t s tr thnh ion m v ngc li nguyn t Ge/Si va c 1 in t chuyn i s to ra mt l trng v nguyn t ny s tr thnh ion dng c nh
Si E Vng dn EC EA EV
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+4 Si +4 EG Mc nhn Vng ho tr
0,01eV
Si
+4
Si
+4
In
+3
Si
+4
Si +4
Si
+4
Si
+4
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BI GING MN
b. Cht bn dn loi P
Nng l trng trong cht bn dn loi P tng nhanh nhng tc ti hp tng nhanh nn nng in t t do gim xung nh hn nng c th c trong bn dn thun Trong cht bn dn loi P, nng ht dn l trng (pp) nhiu hn nhiu nng in t t do np v l trng c gi l ht dn a s, in t t do c gi l ht dn thiu s pp >> np pp=Na+np Na
ni2 ni2 np = = pp Na
Na Nng ion nguyn t tp cht nhn (Acceptor)
BI GING MN
Nng ht ti in trong bn dn khng thun (1)

Thc t Silicon thng c pha tp c cht Donor v Acceptor. Gi s nng pha tp tng ng l Nd, Na . to thnh bn dn N th Nd>Na, in t cho ca nguyn t Donor s ion ha tt c cc nguyn t Acceptor hon thnh lin kt cn thiu in t qu trnh b Compensation. in tch trong cht bn dn N trung ha nn: Nd- Na + p - n = 0
nn
(N d N a ) + (N d N a ) =
2 2
4ni2 1+ (N d N a )2
Nu Nd>>Na nn Nd-Na>>ni th c th tnh gn ng nng cc loi ht ti in nh nh sau: ni2 n Nd Na ; p Nd Na

BI GING MN
Nng ht ti in trong bn dn khng thun (2)

Tng t to thnh bn dn P th Na>Nd, trong bn dn cng xy ra qu trnh b, tnh ton tng t ta c nng l trng trong trng hp ny c tnh nh sau:
pp
(N a N d ) + (N a N d ) =
2 2
4ni2 1+ (N a N d )2
Nu Na>>Nd nn Na-Nd>>ni th c th tnh gn ng nng cc loi ht ti in nh nh sau:
pp Na Nd
ni2 np Na Nd
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BI GING MN
Mc Fermi trong cht bn dn khng thun (1)

Mc Fermi trong cht bn dn N (Nd cng tng mc Fermi cng tin gn ti y ca di dn):
( E F EC )
n n = N C .e
KT
= Nd
NC EF = EC KT ln Nd
EF
i
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BI GING MN
Mc Fermi trong cht bn dn khng thun (2)

Mc Fermi trong cht bn dn P (Na cng tng mc Fermi cng tin gn xung nh ca di ha tr):
p = N V .e
( EV E F )
KT
= Na
NV EF = EV + KT ln Na
EF
i
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5. Dng in trong cht bn dn (1)

Dng in khuch tn: to ra do s chuyn ng ngu nhin do nhit ca cc ht ti in (thng c gi tr trung bnh =0) v s khuch tn cc ht ti in t vng c mt cao sang vng c mt thp hn: 2 3
J diff
(n)
dn = q .D n dx
J diff
( p)
dp = q .D p dx
4 5
1 electron 3 5 4
DP Dn [m2/sec] - l h s khuch tn ca l trng; in t dp/dx, dn/dx gradient nng l trng v in t t do
1 electron
E Dng din tri (Dng in cun): Dng chuyn dch ca cc ht ti in do tc ng ca in trng E: Jdriff =Jdriff(n) + Jdriff(p) = .E = q(nn + pp).E
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5. Dng in trong cht bn dn (2)

Dng tng cng trong cht bn dn: J = Jdriff + Jdiff = Jn + Jp
J n = J driff ( n ) + J diff (n ) = qn n E + qDn dn dx J p = J driff ( p ) + J diff ( p ) = qp p E qD p dp dx
Einstein Relation: linh ng v h s khuch tn D c xc theo m hnh vt l da trn c s mt s lng ln ht ti chu nhng chuyn ng nhit ngu nhin vi s va chm thng xuyn, 2 hng s ny t l vi nhau theo Einstein Relation nh sau:
D
in p nhit Thermal Voltage:
kT q
V th
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kT = q
k - hng s Boltzmann, k =1,38.10-23 [J/0K] q [C] in tch ht ti, T [0K ]

BI GING MN
6. dn in ca cht bn dn
dn in ca cht bn dn khi c c 2 ht ti in tham gia: = q(nn + pp) Vi bn dn loi n, n>>p, dn in l: Vi bn dn loi p, p>>n, dn in l: n = qNDn [(.m)-1] p = qNAp [(.m)-1]
Tp cht cng nhiu th in tr sut cng gim, tuy nhin linh ng nv p li gim khi nng cht pha tp tng, nh vy c ch dn in trong vng pha tp mnh tng i phc tp Nng gii hn cc nguyn t tp cht mun a vo tinh th bn dn c quyt nh bi gii hn ha tan ca tp cht y. Nu vt qu gii hn ny th hin tng kt ta s xy ra, khi tp cht s khng cn c cc tnh cht nh mong mun na
BI GING MN
Tng kt
Cht bn dn thun, khng thun Hm phn b Fermi-Dirac, Mc Fermi Nng ht ti trong cht bn dn:
n . p = n i2 = p i2
p = ni e ( EFi EF ) / kT
n = n i e ( E F E Fi ) / kT
Mc Fermi trong cht bn dn thay i theo nng pha tp Cht bn dn thun c dn in nh, cht bn dn khng thun dn in ln = q ( n . + q . )
n q
J n = J driff ( n ) + J diff (n ) = qn n E + qDn
J = Jn + J
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Dn
dp dn J p = J driff ( p ) + J diff ( p ) = qp p E qD p dx dx kT kT kT = n V th = Dp = p q q q
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Chng 5- it (Diode)
it bn dn 3.0 Gii thiu chung 3.1 Cu to ca it v k hiu trong s mch 3.2 Nguyn l hot ng ca it 3.3 c tuyn Vn-Ampe ca it bn dn 3.4 Cc tham s tnh ca it 3.5 S ph thuc ca c tuyn Vn- Ampe vo nhit 3.6 Phn loi it 3.7 ng dng ca it
BI GING MN
3.0 Gii thiu chung

p A ID n K
+ ID VD
SiO2
metal p-type Si n-type Si metal
SiO2
VD
it bn dn l cu kin in t c mt chuyn tip p-n Theo cng ngh ch to cu kin bn dn, ngi ta ly mt mu tinh th bn dn loi p c nng pha tp NA, sau cho khuych tn vo mu bn dn tp cht Donor vi nng ND>NA t mt pha b mt tinh th vi su ph thuc vo qu trnh khuych tn to ra mt lp bn dn n c nng pha tp ND= ND-NA to thnh tip gip PN
BI GING MN

Nguyn l lm vic da trn cc hiu ng vt l ca chuyn tip PN: it chnh lu: da vo hiu ng chnh lu ca chuyn tip PN it n p Zener: Da vo hiu ng nh thng thc l v nh thng Zener it ngc, it tunen: Da vo hiu ng xuyn hm trn chuyn tip PN pha tp nhiu it Varicap: a vo hiu ng in dung ca chuyn tip PN thay i khi in p phn cc ngc thay i Nguyn l lm vic, c tuyn V-A, ng dng ca mi loi it l rt khc nhau
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3.1 Cu to v k hiu ca it chnh lu

Vng chuyn tip
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3.2 Nguyn l hot ng ca it

Vng chuyn tip hp Vng chuyn tip rng
UAK
UAK
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Phn cc thun (UAK>0): thc y cc e- trong bn dn n v cc l trng trong bn dn p ti hp vi cc ion gn ng bao ca vng chuyn tip v lm gim rng ca vng chuyn tip. Thng thng UAK< 1V Phn cc ngc (UAK<0): s lng cc ion dng trong vng chuyn tip ca bn dn n tng ln do mt s lng ln cc e- t do b ko v cc (+) ca in p cung cp. S lng cc ion m trong vng chuyn tip ca bn dn p cng tng ln. Vng chuyn tip c m rng. Dng in trong k phn cc ngc - dng bo ho ngc Is
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3.3 c tuyn Vn-Ampe ca it bn dn

U D Uth I D = f (U AK ) = I S e 1
UT -in p ngng ca it (/p thng thun) UT = 0,5V-0,8V (it Si) = 0,2-0,4V (it Ge) Uth- in p nhit - h s pht x: =12 i vi it Si 1 i vi it Ge, GaAs
iD=ith
Ut UT
UD=UAK
iD= ing
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C ch nh thng trong chuyn tip PN

Dng phn cc ngc rt nh, nhng khi Ungc t trn chuyn tip PN tng vt qua mt gi tr nht nh dng ngc s tng t ngt hin tng nh thng, hin tng ny c th lm hng dng c nhng c mt s loi dng c hot ng da trn c ch ny Hai c ch nh thng chuyn tip PN: C ch thc l: Ungc tng E trong min in tch khng gian tng, ht dn thiu s b cun qua in trng c ng nng ngy cng ln, khi chuyn ng chng va p vi cc nguyn t lm bn ra in t lp ngoi ca chng, s in t t do mi pht sinh do va chm ny cng c in trng mnh gia tc v tip tc p vo cc NT mi lm bn ra in t t do. Hin tng ny xy ra lin tc v nhanh s ht dn trong bn dn tng t ngt, in tr sut chuyn tip gim i, dng qua chuyn tip PN tng t ngt C ch xuyn hm: E ngc tng ln cung cp nng lng cho cc in t lp ngoi cng ca NT bn dn, nu cc in t ny c nng lng ln chng tch ra khi NT to thnh in t t do, NT b ion ha. Nu in trng ngc ln hin tng ion ha xy ra nhiu dn n s lng ht dn trong bn dn tng t ngt, lm cho dng ngc tng nhanh
BI GING MN
3.4 Tham s c bn ca it (1)

a. in tr mt chiu hay cn gi l in tr tnh (R0) L in tr ca it khi lm vic ch ngun mt chiu hoc ti ch tnh (ti im lm vic tnh trn c tuyn)
UM Ro = = cot g1 IM
Vth
I0e
U Vth
iD
b. in tr ng (Ri ):
dU Ri = dI
Ri =
Vth
I M +I0
U >>1 Vth
IM
Do ch phn cc thun IM >> I0 v

Ri =
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Vth
IM
UD
UM
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c. H s chnh lu: k
L thng s c trng phi tuyn ca it v c xc nh bng biu thc sau: R 0nguoc I th k = = I0 R 0thuan d. in dung chuyn tip: C0 in dung chuyn tip PN khi phn cc ngc e. in p ngc cc i cho php: Ungc max L gi tr in p ngc ln nht c th t ln it m n vn lm vic bnh thng. Thng thng tr s ny c chn khong 0,8U.t. in p ngc cc i Ung. ma x c xc nh bi kt cu ca it v n nm trong khong vi V n 10.000 V
BI GING MN

f. Khong nhit lm vic: L khong nhit m bo it lm vic bnh thng. Tham s ny quan h vi cng sut tiu tn cho php ca it
Pttmax = ImaxUAKmax
it Ge : - 600C n +850C it Si : - 600C n +1500C.
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BI GING MN
3.5. Cc m hnh tng ng ca it

3.5.1. M hnh tng ng trong ch mt chiu v xoay chiu tn hiu ln: a. Cc m hnh tng ng ca it phn cc thun b. Cc m hnh tng ng ca it phn cc ngc 3.5.2 M hnh tng ng xoay chiu tn hiu nh
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Cc m hnh tng ng ca it phn cc thun (1)

1. S mt kha in t trng thi ng: it lm vic in p ln, tn s nh. in p phn cc thun c th b qua v UT = 0,6V cho it Si, v UT = 0,2V cho it Ge l qu nh. c tuyn Vn- Ampe lc ny coi nh trng hp ngn mch c tuyn Vn-Ampe l ng thng trng vi trc I
I I A U = UT K A I VT 0 K 0
UAK
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2. S mt ngun p l tng :
I A U = UT K A UT = 0,6V + -
Cc m hnh tng ng ca it phn cc thun (2)

I K UT = 0,6V UAK
3. S mt ngun in p thc: it c coi nh mt ngun in p thc gm c ngun in p v ni tr ca n chnh l RT (in tr trong ca it v n l in tr thun)
I RT U = UT UT
UT UM GING VIN: ThS. Trn Thc Linh B MN: K thut in t - KHOA KTT1 UAK Trang 13
IM
RT =
U D U M U T = IM I D
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BI GING MN
Cc m hnh tng ng ca it phn cc ngc

S mt kha trng thi h
S mt ngun dng l tng
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Cc m hnh tng ng xoay chiu tn hiu nh (1)

a. S mt in tr ng Ri ch tn hiu nh tn s thp: Trong trng hp ny it lun phn cc thun, i vi tn hiu xoay chiu bin nh p ng ca it c coi nh mt phn t tuyn tnh:
e u = Ri i = Ri R + Ri
dU Ri = dI
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Ri =
Vth
I0e
U Vth
Vth
I M +I0
Ri
Vth
IM
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b. S tng ng ch tn hiu nh tn s cao: ch ny it c coi nh mt in tr thun Ri mc song song vi mt in dung khuch tn Ck.t.. Ck.t. xut hin trong khong thi gian l khong thi gian lch pha gia i v u. Ck.t. l in dung khuch tn ca tip xc P-N v c xc nh:
C k .t =
Ri
Ck.t
= vi ns s
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c. S mt in dung chuyn tip ch tn hiu nh (Phn cc ngc)
C tx =
C0 Vnguoc
1 n
n = 2 3
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3.6 Phn loi it (1)

it chnh lu: s dng tnh dn in mt chiu chnh lu dng in xoay chiu thnh mt chiu
A KA K
it xung: ch xung, it c s dng nh kha in t gm c hai trng thi: "dn" khi R it rt nh v "kha" khi R it rt ln. Yu cu thi gian chuyn t trng thi ny sang trng thi khc phi tht nhanh. Thi gian chuyn trng thi xc nh tc hot ng ca it v do xc nh tc lm vic ca thit b Gm: it hp kim, it mza, it Stky. Trong it Stky c dng rng ri nht. it Stky s dng tip xc bn dn - kim loi. Thi gian phc hi chc nng ngt ca it Stky c th t ti 100psec. in p phn cc thun cho it Stky khong UD = 0,4V, tn s lm vic cao n 100 GHz
BI GING MN
3.6 Phn loi it (2)

it n p: Ngi ta s dng ch nh thng v in ca chuyn tip P-N n nh in p. it n p c ch to t bn dn Silc v n bo m c c tnh k thut cn thit VD: it Zener it bin dung (varicap): L loi it bn dn c s dng nh mt t in c tr s in dung iu khin c bng in p. Nguyn l lm vic ca it bin dung l da vo s ph thuc ca in dung ro th ca tip xc P-N vi in p ngc t vo n
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3.4 Phn loi it (3)

it tunen (hay it xuyn hm): c ch to t cht bn dn c nng tp cht rt cao thng thng n = (1019 1023)/cm3. Loi it ny c kh nng dn in c chiu thun v chiu ngc.
it cao tn: x l cc tn hiu cao tn

it tch sng it trn sng it iu bin
Cc it cao tn thng l loi it tip im

BI GING MN
Mt s hnh nh ca it
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it Zener (1)
Vng Zener c dng thit k it Zener in p Zener (VZ): l in p phn cc ngc m ti dng in c xu hng tng t bin trong khi in p tng khng ng k in p Zener rt nhy cm i vi nhit lm vic
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it Zener (2)
Cc c tnh ca it Zener vi m hnh tng ng mi vng +
+ VZ GING VIN: ThS. Trn Thc Linh B MN: K thut in t - KHOA KTT1
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+ 0,7 V -
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3.7 Mt s ng dng ca it (1)

it c s dng trong nhiu ng dng khc nhau. Mt s ng dng n gin ca it: Mch chnh lu in p xoay chiu Mch nhn i in p Mch ghim v mch hn bin Mch n p Mch tch sng Mch logic ...
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Mch chnh lu mt na chu k n gin
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Chnh lu 2 na chu k
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Mch nhn i bin in p
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Mch dch mc v mch hn ch (ghim nh)
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BI GING MN

Mch hn ch dng it Zener (Zener Limiter): Mt it Zener c th hn ch 1 pha ca mt sng sin ti in p Zener (VZ), trong khi ghim pha kia ti gn gi tr 0 Vi hai it Zener mc ngc nhau (hv), sng sin c th b hn ch c 2 pha ti in p Zener Mch n p dng it Zener (Zener Regulator): -in p ngc khng i (VZ) ca it Zener c dng n nh in p ra chng li s thay i ca in p u vo t mt ngun in p thay i hay s thay i ca in tr ti. I chy qua it Zener s thay i gi cho in p nm trong gii hn ca ngng ca vng lm vic ca it Zener R RL
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BI GING MN

Mch hn bin 1 pha
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BI GING MN

Mch gii hn bin 2 pha
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BI GING MN
Chng 5 - BJT (Transistor lng cc)

1. Cu to v k hiu ca Transistor lng cc trong cc s mch 1.1. Cu to BJT loi pnp, npn, 1.2. Nguyn l hot ng ca BJT 1.3. M hnh Ebers-Moll 2. Cc cch mc BJT v cc h c tuyn tng ng 3. Phn cc cho BJT 4. Cc m hnh tng ng ca BJT. 5. Phn loi BJT 6. Mt s ng dng ca BJT
BI GING MN
1.1. Cu to BJT loi pnp, npn

Collector (N)
IC IB
+ VBE + VCE
Emitter (P+)
+ VEB
IE
Base (P)
Emitter (N+)
Base (N)
Collector (P)
+ VEC
IE
IB
IC
Transistor gm c 2 tip gip PN do 3 lp tng ng 3 min pht, gc, gp v c 3 in cc ni ti 3 min: Cc Pht-E (Emitter), Cc Gc B (Base), Cc Gp-C(Collector) BJT thun c 3 min PNP, BJT ngc c 3 min NPN Chuyn tip PN gia min E-B l chuyn tip Emitter TE, gia B-C l chuyn tip collector TC
BI GING MN
1.1. Cu to BJT loi pnp, npn

Nng pha tp ca min E l kh cao, Min B c nng va phi kch thc kh mng, min C c nng pha tp thp. Min pht c kh nng pht x cc ht dn sang min gc B, min gp c kh nng thu nhn tt c cc ht dn c pht x t min pht E qua min gc B ti Min C thng c nui trn phin bn dn , c lp bn dn vi su c nng cao (Buried layer n++) gim tr s in tr ni tip rng ca min B nh hn di khuch tn trung bnh rt nhiu
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BI GING MN
K hiu v cc dng ng v khc nhau ca BJT
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BI GING MN
1.2. Nguyn l hot ng ca BJT

trng thi cn bng nhit, I qua cc cc = 0 Mun cho Transistor lm vic ta phi cung cp mt in p mt chiu thch hp cho cc chn cc. Tu theo in p t vo cc cc m Transistor lm vic cc ch khc nhau: + Ch ngt: Hai tip gip PN u phn cc ngc. Transistor c in tr rt ln v ch c mt dng in qua cc chn cc rt nh. + Ch dn bo ha: C hai tip gip PN u phn cc thun. Transistor c in tr rt nh v dng in qua n l rt ln. + Ch tch cc: Tip gip BE phn cc thun, tip gip BC phn cc ngc, Transistor lm vic nh mt phn t tch cc, c kh nng khuch i, pht tn hiu... L ch thng dng nht ca Transistor + Ch tch cc o (Ch o): Tip gip BE phn cc ngc, tip gip BC phn cc thun, y l ch khng mong mun
BI GING MN
1.2. Nguyn l hot ng ca BJT

Transistor pnp v npn c nguyn l lm vic ging ht nhau, ch c chiu ngun in cung cp l ngc du nhau. Ch cn xt vi BJT npn, vi loi BJT pnp tng t ch ngt v ch dn bo ha, BJT lm vic nh mt phn t tuyn tnh trong mch in. Trong BJT khng c qu trnh iu khin dng in hay in p. Transistor lm vic ch ny nh mt kha in t v n c s dng trong cc mch xung, cc mch logic BJT - npn Cc vng lm vic ca BJT: BJT - pnp
Tch cc o Ngt
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VBC
Bo ha VBE Tch cc
Tch cc o Ngt
VC
B Bo ha VEB Tch cc
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BI GING MN
a. BJT lm vic trong ch tch cc (1)

E TE B TC C n VBE p n VBC E TE B TC C p VBE n p VBC
-Tip gip BE phn cc thun - Tip gip BC phn cc ngc

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BI GING MN

TE phn cc thun nn ht dn a s l in t t min E c khuch tn sang min B qua chuyn tip TE, tr thnh ht dn thiu s, do s chnh lch nng chng tip tc khuch tn n min chuyn tip TC, ti y n c cun sang min C (do in trng ca tip gip TC c tc dng cun ht thiu s) Ht dn a s l l trng ti min B cng khuch tn ngc li min E nhng khng ng k so vi dng khuch tn in t do nng l trng min B t hn rt nhiu (do nng pha tp min B t hn nhiu) in t khuch tn t E sang B lm cho mt in t rt cao min B ti v tr gn lp tip xc TE v y in t v l trng s ti hp vi nhau cc in t b ti hp t, ngi ta ch to phn pht (E) c nng tp cht ln hn rt nhiu so vi phn gc (B) thnh phn dng in cc pht do cc in t to nn ln hn nhiu thnh phn dng in do cc l trng to nn
BI GING MN

Hiu sut ca cc pht: - l t s gia thnh phn dng in ca ht a s vi dng in cc pht:
BJTnpn :
I nE I nE = 0,98 0,995 I E I pE + I nE
H s khuch i dng in cc pht tnh : F (0) hay cn gi l h s truyn t dng in cc pht :

IC F = 0 = = * IE
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BI GING MN

Dng in IB ch yu gm dng ngc ca tip xc gp TC, dng cun cc ht thiu s qua tip xc pht TE v cc thnh phn dng in do hin tng ti hp trong lp tip xc pht v trong min gc to nn IB=IpE- InE-InC-ICB0 Quan h gia 3 thnh phn dng in trong BJT trong ch 1 chiu: IB = (1-0)IE - ICBo IC = InC+ ICBo= 0IE + ICBo IE = IC + IB Thc t thng dng h s khuch i dng in cc pht tn hiu nh hay cn gi l h s truyn t vi phn dng in cc pht :
=
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I C I E
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BI GING MN

H s K dng Emitter chung (tnh) mt chiu F (0):
IC F 0 = , m I E = I B + I C 0 = IB 1F
H s khuch i dng Emitter chung tn hiu nh: I C = = I B 1 M hnh kch thc n gin ca BJT npn:
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BI GING MN
Phn b nng ht dn trong BJT
iu kin cn bng nhit:
ch tch cc:
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BI GING MN
Tnh ton dng Collector : IC

Dng in ch yu trong BJT l cc dng khuch tn ht dn Dng IC ch yu l dng cc ht dn thiu s khuch tn trong min B v c cun sang min C qua chuyn tip collector
qDn n pB 0 AE IS = WB
IS- dng Collector bo ha
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BI GING MN
Tnh ton dng Base : IB

IB ch yu do dng khuch tn l trng sang min E v dng ti hp ti TE v min B, tnh ton dng in trn cc B b qua dng ti hp. Gi s s phn b ht thiu s l trng trong min E l tuyn tnh
V VBE>>KT/q ta c IB=IC/0 :
qDn n pBo AE WB IC = Dn n pB 0 WE F = = I B qD p pnEo AE D p pnE 0 WB WE
n pB 0 pnE 0
N dE = N aB
F = 0 =
Dn N dEWE D p N aBWB
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BI GING MN
Dng in trn cc pht IE

Vi quy c chiu cc dng in nh hnh v, dng in trn cc pht c xc nh nh sau:
qVBE I S qVBE I E = I C + I B = I S exp + 1 exp F kT kT

Dn N dEWE F = 0 = D p N aBWB
IC IB
qDn n pB 0 AE IS = WB
IE
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BI GING MN
a. BJT lm vic trong ch tch cc

Dn N dEWE F = 0 = D p N aBWB
Nhn xt 0 : 0 ln chn: NdE>>NaB; WE>>WB hay gim ti a kch thc min Base WB v pha tp ti a min Emitter NdE Thc t 0 ca npn lun ln hn 0 ca pnp v lun c Dn>Dp Hin nay ngi ta ch to c BJT c 0 t khong 50 300 0 c lp vi IC Vic n nh 0 trong khi sn sut rt kh do cn s dng k thut mch in t gii quyt
BI GING MN
Tm tt: BJT lm vic trong ch tch cc

Ch lm vic tch cc: tip gip BE phn cc thun, tip gip BC phn cc ngc I I Quan h gia cc dng in trong BJT-npn l:
B C
IE=IB+IC
q D n n pB 0 AE IS = WB
IE
Trong ch tnh (ch 1 chiu):

F = 0 =
IC IE
F = 0 =
IC F = IB 1F
F =
Dn N dEWE D p N aBWB
Trong ch ng: = I C
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I E
I C = = I B 1
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BI GING MN
b. BJT ch ngt (Cut-off )

E TE B TC C n VBE p n VBC
S phn cc BJT npn trong ch ngt EC B EB E ICBo RC C B E ICBo S tng ng n gin ca BJT npn ch ngt C
UCE
E TE B TC C p VBE n p VBC
Cung cp ngun sao cho hai tip xc PN u c phn cc ngc. in tr ca cc chuyn tip rt ln, ch c dng in ngc bo ha rt nh ca tip gip gp ICB0. Cn dng in ngc ca tip gip pht IEB0 rt nh so vi ICB0 nn c th b qua. Nh vy, mch cc E coi nh h mch. Dng in trong cc gc B: IB= -I CB0
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BI GING MN
Tnh dng in trong BJT ch ngt

Dng qua cc tip gip ch yu l dng ngc - dng cun cc ht thiu s l trng ca cc min qua cc tip gip. L trng c cun t min B sang min E to ra dng IB1, v l trng t min B cun sang min C to ra dng IB2, cc dng ny rt nh
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BI GING MN
CU KIN IN T & QUANG IN T E TE B TC C p n n VBE VBC E TE B TC C p VBE n p VBC
c. BJT ch bo ha (Saturation)
S phn cc BJT npn trong ch bo ha RC C B EB UBE E UCE IC S tng ng n gin ca BJT npn ch bo ha EC EC B IC RC C E
UCE 0V
EC IC RC
Cung cp ngun in mt chiu vo cc cc ca Transistor sao cho hai tip xc PN u phn cc thun. Khi in tr ca hai tip xc pht TE v tip xc gp TC rt nh nn c th coi n gin l hai cc pht E v cc gp C c ni tt. Dng in qua Transistor IC kh ln v c xc nh bi in p ngun cung cp EC v khng ph thuc g vo Transistor ang s dng, thc t UCE 0,2V
BI GING MN
Tnh dng trong BJT ch bo ha

Ch bo ha c th coi nh l s xp chng ca 2 ch tch cc v ch o Dng in cc cc ch bo ha:
ch bo ha min B v C d tha cc ht dn thiu s nn s mt mt thi gian tr BJT ra khi ch bo ha

BI GING MN
1.3 M hnh Ebers-Moll (1)

Phng trnh Ebers-Moll: Vit biu thc dng trn E v C theo dng qua cc chuyn tip
VBC Vth I S VBE Vth e 1 + I S e 1 IE = F
IC V BE V th I = IS e 1 S R V BC V th e 1
t IS=FIES= RICS , ta c h phng trnh Ebers-Moll:

I E = I ES e V BE I C = F I ES e
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V th
1 + R I CS e V BC 1 I CS e V BC
V BE V th
V th
V th
)
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BI GING MN
1.3 M hnh Ebers-Moll (2)

M hnh c th s dng cho BJT c 3 ch lm vic khc nhau: ch tch cc, ch ngt, ch bo ha Thng dng cho cc trng hp mt chiu v trng hp tn hiu ln c xy dng trn t h phng trnh Ebers-Moll
IC IB
IS=FIES= RICS
I E = I ES eVBE I C = F I ES e
Vth
IE
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1 + R I CS eVBC 1 I CS eVBC
VBE Vth
Vth
Vth
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BI GING MN
M hnh Ebers-Moll n gin cho cc C lm vic

a. M hnh Ebers-Moll n gin cho BJT npn trong ch tch cc:
VBE = 0.7
IB
B
VCE > 0.2
IC
C
VBE = 0.7
IC = F I B
E
b. M hnh Ebers-Moll n gin cho BJT npn trong ch bo ha (2 it phn cc thun):

IB
B
IC
VBE = 0.7
VCE = 0.1
E
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BI GING MN
2. Cc cch mc BJT v cc h c tuyn tng ng

Trong cc mch in, BJT c xem nh mt mng 4 cc: tn hiu c a vo hai chn cc v tn hiu ly ra cng trn hai chn cc BJT c 3 cc l E, B, C nn khi s dng ta phi t mt chn cc lm dy chung ca mch vo v mch ra. Ta c th chn mt trong 3 chn cc lm cc chung cho mch vo v mch ra. Do , Transistor c 3 cch mc c bn l mch cc pht chung (CE), mch cc gc chung (CB), v mch cc gp chung (CC).
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BI GING MN

i1 u1 4C i2 u2 UBE (CE)
IB
IC
UCE IE
UEB
IE
IB
IC
IB
IE UEC
IC
UCB
UBC
(CB)
(CC)
c trng ca mng 4 cc dng h phng trnh tr khng, dn np, hn hp. H phng trnh hn hp:
u1 = f (i1, u2 ) i2 = f (i1, u2 )
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u1 = h11.i1 + h12.u2 i2 = h21.i1 + h22.u2

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BI GING MN

I1 U1 4C I2 U2 UBE (CE) c tuyn c tuyn vo c tuyn phn hi c tuyn truyn t c tuyn ra
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IB
IC
UCE IE
UEB
IE
IB
IC
IB
IE UEC
IC
UCB
UBC
(CB) CE CB
u1 = f (i1 ) |u2
Tng qut
UBE = f (IB ) |UCE UBE = f (UCE ) |IB
UEB = f (IE ) |UCB UBC = f (IB ) |UEC UEB = f (UCB) |IE UBC = f (UEC ) |IB
(CC) CC
u1 = f (u2 ) |i1
i2 = f (i1 ) |u2
IC = f (IB ) |UCE
IC = f (IE ) |UCB IE = f (IB ) |UEC
i2 = f (u2 ) |i1
IC = f (UCE ) |IB IC = f (UCB) |IE IE = f (UEC ) |IB

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BI GING MN

Cc h c tuyn c trng cho tham s, c tnh ca BJT mi cch mc, chng c vai tr quan trng trong vic xc nh cc im lm vic, nh thin, ch lm vic ca BJT. v cc h c tuyn ny thng dng m hnh BJT l tng, vi cc /k:
c tuyn V-A ca mi chuyn tip PN u c m t bng biu thc: I= IS [exp(U/Uth) 1] Cng in trng trong chuyn tip PN nu phn cc ngc phi nh hn nhiu in trng gy ra nh thng in tr sut ca cc min E, B, C coi nh l rt nh. Ngoi in trng tn ti cc chuyn tip PN khng c in trng tn ti cc ni khc Nng phun cc ht dn thp Trong BJT l tng c tuyn ca mi chuyn tip PN chu nh hng tuyn tnh ca dng in i qua chuyn tip kia
BI GING MN
Cc tham s c trng cho BJT mi ch mc (1)

Ngoi cc c tuyn tng ng vi tng ch mc, cn cn phi xc nh cc tham s c trng nh sau: h dn S : biu th mi quan h gia dng in ra trn mch v in p vo dI ra
S= dU Vao khi U ra = const
in tr ra vi phn rra : biu th quan h gia dng in trn mch ra vi in p trn mch ra. dU
rra =
ra
dI ra
khi I vo = const
in tr vo vi phn rvo : biu th quan h gia dng in trn mch vo vi in p trn mch vo
rvo =
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dU vao dI Vao
khi U ra = const
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BI GING MN
Cc tham s c trng cho BJT mi ch mc (2)

H s khuch i dng in tnh: Ki0
Ki0 = I ra I vo
dU ra dU vo Pra Pvo
H s khuch i in p: Ku
KU =
H s khuch i cng sut: KP
KP =
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BI GING MN
2.1 S BJT npn mc cc pht chung - CE

Xc h nh c tuyn ra tnh: IC = f (UCE ) |IB Gi IB mt tr s c nh, thay i UCE v ghi li gi tr tng ng ca IC, v c c tuyn IC=f(UCE) Thay i IB n gi tr khc nhau v thc hin tng t, kt qu thu c l h c tnh ra tnh ca BJT mc CE
IB UBE IC UCE
UBE = f (IB ) |UCE

Xc nh h s truyn t (c tuyn khuch i): C th c xc nh t c tuyn ra
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IE
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BI GING MN
c tuyn ra v c tuyn khuch i (CE)

c tuyn khuch i c tuyn ra
Tng tuyn tnh

Vng nh thng
UCE=5V UCE=2V -Bo ha
IB( A)
IB =0A IB =-ICB0
ch ngt ch tch cc (Tr khng ra rt cao)

BI GING MN

Nhn xt c tuyn ra
Ti min khuch i, dc ca c tuyn kh ln. Khi UCE tng lm cho rng hiu dng ca min B hp li, lm cho s ht dn c cun sang min C cng nhiu, do dng IC tng nhanh Khi UCE gim, n im un ca c tuyn khi UCB=UCE-UBE=0, lm cho chuyn tip BC phn cc thun, BJT chuyn sang ch lm vic bo ha. Khi UEC=0 thi in p phn cc thun UCB=-UBE y ht dn thiu s min C tr li min B do IC=0, c tuyn cng i qua gc ta Khi UEC tng qu ln, lc UCB qu ln dn ti nh thng tip gip TC, lm cho dng IC tng t ngt Nhn xt c tuyn truyn t: c tuyn truyn t biu th mi qua h gia dng ra IC v dng vo IB khi gi UCE c nh. c tuyn ny c th suy ra t h c tuyn ra
BI GING MN

Xc h nh c tuyn vo tnh:
U BE = f (I B ) |U CE
Gi UCE =const., thay i UBE v ghi li gi tr tng ng ca IB, v c c tuyn IB=f(UBE), Thay i UCE n gi tr khc nhau l thc hin tng t, kt qu thu c h c tnh vo tnh ca BJT mc CE
Nhn xt c tuyn vo tnh:

cc ngc, trong lc tip xc gp phn 0,8 cc ngc (UCE < 0) Transistor lm vic ch ngt IE = 0 IB = - ICBo 0,5 + Khi UBE > 0 th tip xc pht TE phn 0,4 cc thun, c tuyn ging nh c 0,2 tuyn ca it phn cc thun, v dng IB l mt phn ca dng IE qua chuyn tip TE phn cc thun IB = (1- )IE - ICBo
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+ Khi UBE < 0 th tip xc pht TE phn 1
UBE [V]
UCE= 10V UCE= 5V UCE= 2V UCE= 0,1V UCE= 0V
IB [A]
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BI GING MN
Cc tham s c trng (CE)

h dn S :
S= dI ra dI C = khi U ra = U CE = const dU Vao dU BE
U BE Vth
I C = I S .e
I S U BE Vth S= e Vth
dU CE dI C
dU BE dI B
in tr ra vi phn rra :
rra = rCE =
khi I vo = I B = const
khi U ra = U BE = const
in tr vo vi phn rvo :
rvo = rBE =
H s khuch i dng in tnh: K i 0 =
I ra I = C = DC = hFE I vo I B
Ki0 kh ln, mch CE c th khuch i dng in c im ca mch CE (Xem gio trnh)

BI GING MN
2.2 S BJT npn mc cc pht chung - CB Xc h nh c tuyn ra tnh: IC = f (UCB) |I

E
Gi IE =const., thay i UCB v ghi li gi tr tng ng ca IC, v c c tuyn IC=f(UCB). Thay i IE n gi tr khc nhau v thc hin tng t, ta thu c l h c tnh ra tnh ca BJT mc B chung Xc h nh c tuyn vo tnh: UEB = f (IE ) |UCB
UEB
IE
IC
UCB
IB
(CB)
Gi UCB = const., thay i UEB v ghi li gi tr tng ng ca IE, v c c tuyn IE=f(UEB). Thay i UCB n gi tr khc nhau v thc hin tng t, ta thu c h c tnh vo tnh ca BJT mc B chung Xc nh h s truyn t: IC = f (IE ) |UCB C th c xc nh t c tuyn ra
BI GING MN
c tuyn ra tnh (CB)

i vi dng IE c nh, IC IE, khi UCB tng ln, IC tng nhng khng ng k
IC (mA) 40 30
Vng tch cc IE5 = 40mA IE4 = 30mA IE3 = 20mA IE2 = 10mA IE1= 0 UCB (V)
Vng dn bo 20 ha 10 0 -2 -4
(IE3 - IE2)
-6 Vng ngt
-8
- Khc so vi c tuyn ra ca BJT mc CE, khi UCB gim ti 0, IC vn cha gim ti 0, do bn thn chuyn tip TC vn cn in th tip xc, chnh in th tip xc ny cun nhng ht dn t min B sang min C lm cho dng IC tip tc chy. IC =0 th TC phi c phn cc thun. Min c tuyn trong TC phn cc thun gi l min bo ha - Khi UCB tng n gi tr no th IC tng ln t ngt do hin tng nh thng xy ra
BI GING MN
Nhn xt c tuyn vo tnh (CB)

Chuyn tip EB lun phn cc thun nn c tuyn vo ca mch CB c bn ging nh c tuyn thun ca it. ng vi in p m vo UEB c nh dng vo IE cng ln khi in p UCB cng ln, v min in tch khng gian ca chuyn tip TC phn cc ngc cng tng, lm cho khong cch hiu dng gia chuyn tip Emitter v Collector ngn li, do dng IE tng ln
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UEB [V] -1 -0,8 -0,5 -0,4 -0,2 -1 -2 -3 -4 IE [mA] UCB= 0V UCB= 1V UCB= 2V UCB= 6V
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BI GING MN
Cc tham s c trng (CB)

h dn S :
S= dI ra dI C = khi U ra = U CB = const dU Vao dU EB
U BE Vth
I C = I S .e
I S U BE Vth S = e Vth
dU CB dI C
dU EB dI B
rra = rCB =
khi I vo = I E = const
khi U ra = U CB = const
in tr vo vi phn rvo : rvo = rEB =
H s khuch i dng in tnh: K i 0 =
I ra I = C = 0 < 1 I vo I E
Ki0 < 1, mch CB khng th dng lm mch khuch i dng in c im ca mch CB (Xem gio trnh)
BI GING MN
2.3 S BJT npn mc cc gp chung - CC

Xc nh h c tuyn ra tnh: IE = f (UEC ) |IB Gi IB mt tr s c nh, thay i UEC v ghi li gi tr tng ng ca IE, v c c tuyn IE=f(UEC). Thay i IB n gi tr khc nhau l thc hin tng t, ta thu c h c tnh ra tnh ca BJT mc C chung
IB
IE UEC
IC
UBC
(CC)
Xc h nh c tuyn vo tnh: UBC = f (IB ) |UEC Gi UEC mt tr s c nh, thay i UBC v ghi li gi tr tng ng ca IB, v c c tuyn IB=f(UBC). Thay i UEC n gi tr khc nhau l thc hin tng t, ta thu c h c tnh vo tnh ca BJT mc C chung Xc nh h s truyn t (c tuyn khuch i): IE = f (IB ) |UEC C th c xc nh t c tuyn ra
BI GING MN
c tuyn vo tnh (CC)

IB(A) 40 30 20 10 -1 -2 -3 -4 UCB(V) UCE=2V UCE=4V
c tuyn vo ca mch mc CC khc hn vi trng hp mc CE v CB. Trng hp ny in p vo UCE ph thuc rt nhiu vo in p ra UCB,
BI GING MN
c tuyn ra (CC)
c tuyn khuch i IE c tuyn ra
Tng tuyn tnh

Vng nh thng
UCE=5V UCE=2V -Bo ha
IB(A ) 2
0
ch ngt
IB =0A IB =-ICB0
ch tch cc (Tr khng ra rt cao)

Trang 42
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BI GING MN
Cc tham s c trng (CC)

h dn S :
S= dI ra dI E = khi U ra = U EC = const dU Vao dU BC
rra = rEC =
dU EC dI E
dU BC dI B
khi I vo = I B = const
khi U ra = U EC = const
in tr vo vi phn rvo :
rvo = rBC =
H s khuch i dng in tnh: Ki0 H s khuch i in p : KU =

dU ra dU vo
Ki0 =
I ra I = E I vo I B
c im ca mch CC (Xem gio trnh)

BI GING MN
3. Phn cc cho BJT

3.1. Khi nim phn cc cho cc ch lm vic ca BJT 3.2. Phn cc bng dng c nh 3.3. Phn cc bng hi tip m 3.4. Phn cc bng mch nh thin t cp
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Trang 44
BI GING MN
3.1 Khi nim phn cc cho cc C lm vic ca BJT

Phn cc (nh thin Biasing) cho BJT: Mun BJT lm vic nh mt phn t tch cc th cc tham s ca BJT phi tha mn k thch hp, nhng tham s ny ph thuc nhiu vo in p phn cc cc chuyn tip Collector v Emitter. Nh vy cc tham s ca BJT ph thuc nhiu vo in p nh thin ban u (im lm vic tnh) ca n Mun BJT lm vic ch tch cc th chuyn tip B-E phn cc thun, chuyn tip B-C phn cc ngc (BJT npn: UE<UB<UC, BJT pnp: UE>UB>UC). ng ti tnh, im lm vic tnh: ng ti tnh (ng ti 1 chiu) c v trn c tuyn ra tnh ca BJT nghin cu mi quan h gia dng in ra v in p ra ca BJT ch mt chiu. im lm vic tnh (im phn cc 1 chiu) l im nm trn ng ti tnh, n xc nh dng in, in p 1 chiu trn BJT khi khng c tn hiu xoay chiu t vo minh ha xt v d vi mch BJTnpn mc CE, xc nh ng ti tnh v im lm vic ca chng
BI GING MN
3.1 Khi nim phn cc cho cc C lm vic ca BJT

Xt v d vi mch BJTnpn mc CE, xc nh ng ti tnh v im lm vic Phng trnh ng ti tnh: UCE=EC-IC.RC (ti 1 chiu: Rt0=RC), th nh hnh v
+ Ec
RB C1 Uvao IB IC T1 RC
C2 Ura UCE
Ty theo cc gi tr phn cc m im lm vic tnh c ta khc nhau, im lm vic tnh Qi(UCEi,ICi,IBi) l giao im ca ng ti tnh v c tuyn ra tng ng vi dng phn cc IB=IBi Khi c tn hiu t vo, IB bin i IC bin i, kt qu l Ura trn ti bin i. Cn phi chn im lm vic tnh Q in p ra trn ti khng b mo. Thng thng bin in p ra cc i, khng lm mo dng tn hiu, im lm vic tnh thng c chn gia ng ti tnh.
BI GING MN

ICmax EC/Rt0 IC
3
IC(mA ) Q3
im lm vic tnh Qi(UCEi,ICi,IBi) I

3
Pmax ng ti tnh Q2 Q1 IB2
EC/Rt02 im bo ha IC
2
IB2
IC
1
IB1 -IB2 IB0=0
IB1 -IB1
UCE3 UCE2 UCE1 E UCEmax UCE(V) C -UCE2 UCE2 im ct UCE1

-UCE1
Trang 47
BI GING MN

Ch khi chn im lm vic tnh cn quan tm n cc gi tr danh nh ca BJT nh: Pcmax, UCmax, ICmax, UBEmax, di nhit lm vic TminTmax im lm vic tnh phi la chn nm trong gii hn ng Pmax. n nh im lm vic tnh v n nh nhit: BJT rt nhy cm vi nhit , nht l UBE v ICB0, m IC=0.IB+ICB0/(1-) , nn khi nhit thay i im lm vic tnh cng thay i. H s n nh nhit: S = trnh IC=0.IB+ICB0/(1-), rt gn ta c:
dIC dICB0
o hm 2 v theo IC phng
S= 1+ 0 dI 1 0. B dI C
Trang 48
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BI GING MN
M hnh tng ng mt chiu

Khi tnh ton phn cc cho BJT c th s dng m hnh tng ng mt chiu. Thng s dng m hnh Ebers-Moll. Trong mi ch lm vic c th s dng s tng ng Ebers-Moll n gin. Khi tnh ton ch 1 chiu n gin c th dng cc cng thc: + Ch tch cc: I C = I B 0
U BE cont ( eg. 0,7V npnSi ; 0,7V pnpSi )
+ Ch bo ha:
U CE 0
+ Ch ngt:
IB >
IC
IC 0
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IB 0
BI GING MN
3.2 Mch nh thin bng dng c nh (/thin cc gc)

Dng IB t ngun mt chiu cung cp cho BJT khng i, c th dng mch 1 ngun mt chiu EC hoc hai ngun mt chiu UBB v EC. in tr RB u t cc + ca ngun cung cp v cc B sao cho tip gip BE phn cc thun.. + Ec + Ec
RB C1 IB IC T1 RC IC C2 Ura UCE C1 Uvao + RB IB UBB RC T1 C2 Ura
(a- Mch 1 ngun)
Uvao
(b Mch hai ngun)
IB= (EC-UBE)/RB EC/RB
IB= (UBB-UBE)/RB UBB/RB
+ Phng trnh ng ti: EC=IC.Rt0+UCE (Rt0=RC) + Mc theo cc s trn IB=const => IB/IC=0 + H h s n nh nhit l: S= 0+1, S ph thuc vo h s K dng Emitter tnh ,vy S ph thuc vo tng loi BJT v thng ln, n nh km nht.
BI GING MN
3.3 Mch phn cc hi tip m

Khi tn hiu u ra thay i cng s tc ng n u vo lm thay i tn hiu u vo gi l mch c hi tip. Nu tn hiu ra tng li lm tn hiu u vo gim th gi l hi tip m. Vi mch phn cc cho BJT nu gi s khi nhit thay i lm cho dng in ra IC v IE tng ln, s tng ny nu lm gim in p t trn tip gip BE hoc CE th s lm cho IB gim, nh vy IC v IE gim, im lm vic c n nh. Ty theo phng php dng hi tip m in p m c cc loi mch phn cc hi tip m khc nhau: a. Mch nh thin hi tip m Collector. b. Mch nh thin hi tip m Emitter. c. Mch nh thin hi tip m Collector v Emitter.
BI GING MN
a. Mch nh thin hi tip m Collector

+
Ec RC C2 T1 Ura C1 Uvao RB1 C3 RB2
+ Ec
RC C2 T1 Ura
IB+IC
C1 Uvao RB
IC
(a)
(b)
- Mch nh thin c nh c n nh nhit khng cao, v khi dng IC tng lm in p UCE gim, c th dng c tnh ny lm cho dng IB gim do n nh c dng IC bng cch dng in tr hi tip RB t cc C v B, ta c mch Collector-Feedback Bias (CFB) hnh (a). - IB, IC = ? - Phng trnh ng ti tnh: EC=(IC+IB)RC+UCE= ICRC(0+1)/0+UCE
BI GING MN
a. Mch nh thin hi tip m Collector

- H s n nh nhit:
S=
0 + 1
1 + 0 RC RB + RC
- Nh vy S< 0+1, ci thin c tnh n nh nhit. - Nu chn RB<<RC th S1. - in p phn hi m qua RB trong mch phn cc lm tng n nh nhit ng thi li lm gim h s khuch i tn hiu xoay chiu, RB gim th n nh tng nhng h s khuch i gim. Nh vy khc phc mu thun ny RB c chia thnh 2 phn R1 v R2 v dng t ni t im ni gia 2 in tr ny nh hnh (b). C h mch i vi tn hiu nh thin 1 chiu nhng ngn mch tn hiu xoay chiu khng cho phn hi tr li u vo. - Mch nh thin hi tip m Collector vn khng th tng c n nh ln cao v S v im cng tc tnh ph thuc ln nhau.
BI GING MN
b. Mch nh thin hi tip m Emitter

EC IB C1 Uvao RB IC RC T RE RB Ura Uvao C1 EC RC T RE C2 C2 Ura CE
(a)
(b)
D dng tnh c: I B =
( EC U BE ) RE ( 0 + 1) + RB
IC =
0 ( EC U BE ) RE ( 0 + 1) + RB
Phng trnh ng ti tnh ?

U CE = ?
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S =?
BI GING MN
c. Mch nh thin hi tip m Collector v Emitter

Phng trnh ng ti tnh ?
IB = ?
+
Ec RC C2 T1 Ura
IB+IC
C1 Uvao RB
IC = ?
S =?
IC
U CE = ?
RE
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Trang 55
BI GING MN
3.4 Phn cc bng mch nh thin t cp

+ Ec + Ec R1 C2 T1 RE Ura IC RB IB +E + Ec RC T1 RE Ipa1 C1 Uvao Ipa2 R1 IB RC
IC
UB
R2
UB
R2
UB
IE
(a)
(b)
- Mch nh thin t cp (cn c gi l mch phn p, mch phn cc bng dng Emitter, mch phn cc bng hi tip m dng in) c s nh hnh (a). S tng ng tnh nh hnh (b) (p dng bin i Norton, Thevenin vi c cu ngun EC v in tr phn p R1, R2. - R1, R2 to thnh mch phn p to in p UB t vo cc B ca BJT.
BI GING MN

-RE hi tip m dng in. Uht= UE=IE.RE -Gi tr ca ngun bin i tng ng: E = R2 .EC B
R1 + R2 v RB = R1 R2 R1 + R2
-Cn chn R1, R2 m bo UB n nh v UB<<EC, nhng RB khng ln hn nhiu RE, nu khng th s phn cc ca mch ging nh trng hp phn cc dng c nh. (Thng thng chn RB=RE) EB=IBRB+UBE+(IC+IB)RE=UBE+IB(RB+(0+1)RE -Trong trng hp ny khng c b qua UBE E B U BE -Tnh ton im phn cc: IB = ; IC = 0 I B RB + ( 0 + 1) RE - Phng trnh ng ti tnh: EC=IC(RC+RE)+UCE+IB.RE (b qua IB.RE) EC = IC(RC+RE)+UCE
BI GING MN

S =
0 +1
1+ 0 RE RE + RB
= (1 + 0 )
RE 1 + 0 + RB
1+
RB
RE
S1 khi RB<<RE, v S1+ 0 khi RB>>RE S khng ph thuc vo Rt0=RC. - Bn cht ca s n nh nhit ca mch nh thin t cp chnh l dng phn hi m qua in tr RE. Tng RE ngha l tng phn hi m, do lm gim h s khuch i tn hiu xoay chiu ca mch. C th loi tr phn hi m ca tn hiu xoay chiu bng cch mc thm t in CE ngn mch i vi tn hiu xoay chiu nh hnh c, d. - Trong thc t 0 cng thay i theo nhit , do cng nh hng n n nh ca im lm vic tnh
BI GING MN

+ Ec Ipa1 C1 Uvao Ipa2 R2 R1 IB RC C2 T RE Ura CE C1 Uvao R2 + R1 Ec RC C2 T RE1 RE2 CE Ura
IC
(c)
(d)
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Trang 59
BI GING MN
Tng kt s ci thin cc mch nh thin cho BJT

+ EC RB RC T + RB EC RC T RB + EC RC T RB + EC RC T RE + EC R1 RC T
(1)
(2)
RE
(3)
(4)
(5) R2 RE
(1) : BB - Base Bias (2) : EFB - Emitter-Feedback Bias (3) : CFB - Collector-Feedback Bias
n nh tng dn
(4) : CEFB Collector- and Emitter- Feedback Bias (5) : VDB Voltage Divider Bias
BI GING MN
Mch nh thin cho BJTpnp

Ch : Mch phn cc cho BJTpnp cng tng t, ch khc nhau v chiu ca ngun cung cp, v ch chiu dng in ca cc cc cng ngc li
RB EC RC T RB EC RC T RE RB EC RC T RB EC RC T RE + E E RE T RC - EC R1 RC T R2 RE
BB
+ RB EE
EFB
EE RE T RC RB T RC +
CFB
+ EE RB RC T
CEFB
RB
VDB
+ EC R2 RE T R1 RC
Trang 61
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BI GING MN
3.5 BJT trong ch chuyn mch (ch xung)

VD: BJT hot ng trong cc mch xung, mch s, mch logic BJT trong trng hp ny lm vic nh mt mt kha in t, BJT lm vic 2 ch : ng ch ngt (ngt mch khng c dng i qua BJT), m - ch dn bo ha (ni mch cho dng i qua BJT) Do cc tham s, c tnh ca BJT chuyn dng cho cc ng dng ny cng c nhiu c tnh khc so vi BJT chuyn hot ng ch tch cc. Cc tham s ca BJT lm vic ch chuyn mch : + in p thun UBEbh : l in p UBE khi BJT mc CE trng thi bo ha. + in p bo ha UCEbh: l in p UCE khi BJT mc CE trng thi bo ho + Thi gian qu ca BJT : ton - thi gian qu khi BJT chuyn t ch ngt sang ch bo ho, toff thi gian qu khi BJT chuyn t ch bo ha sang ch ngt.
BI GING MN
3.5 BJT trong ch chuyn mch

- Vd mch BJT lm vic ch chuyn mch nh hnh (a) - Khi Ui =0V => tip gip BE, BC phn cc ngc, Q lm vic ch ngt, IB=IB0=ICB00, IC 0 => UO= EC=5V - Khi Ui=5V, chn RC, RB sao cho Q lm vic ch bo ha, Khi : Uo=UCE 0V. Nh vy BJT lm vic chuyn i gia 2 im bo ha v ngt.
I CSat
E U CESat EC = C RC RC
Ec =+5V RC 0.82k UO Q (=125) C
Ui
I CSat U i U BE iu kin Q bo ha: I B > IB = RB

5V 0V t
ICSat IC(mA )
im bo ha
IB IB2
UO
Ui
RB 68 k
5V 0V t
R 0 C IB
im 1 I ngt B0=-ICB0
(a)
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Ngt
UCESa E Bo ha E GING VIN: ThS. Trn Thc Linh t
E
C
B MN: K thut in t - KHOA KTT1
UCE(V Trang 63 )
BI GING MN
Thi gian qu ca BJT

- Gin thi gian minh hot cc thi gian qu ca BJT lm vic ch chuyn mch. - Ban u BJT trng thi ngt, ti thi im t0 khi c xung dng t vo, chuyn tip BE c phn cc thun BJT m, tuy nhin IC vn rt nh nh trng thi ngt trong thi gian tr td, sau mi bt u tng v sau thi gian tng tr mi t gi tr bo ha ICS, v trng thi bo ha trong khong thi gian tn, sau t ngt xung vo mt Ui=0, v dng IB chy theo chiu ngc li, dng IC khng gim nh ngay m tip tc duy tr gi tr bo ha trong thi gian tn tch tS, sau mt thi gian hi phc tf mi gim dn n gi tr ban u nh trng thi ngt
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t on = t d + t r
Ui U1 -U2 0 iB t0 iC t0
toff = t s + t f
t
IB1 -IB2 ICS 0,9ICS 0,1ICS 0
t t tr
d
tn
ts tf to
Trang 64
BI GING MN
4. Cc m hnh tng ng ca BJT

a. M hnh tng ng mt chiu b. M hnh tham s Hybrid (Hybrid parameter/hParameter Model) c. M hnh tng ng tn hiu nh hybrid- d. M hnh tng ng re e. M hnh Spice
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Trang 65
BI GING MN
b. M hnh tham s Hybrid

- T h phng trnh hn hp H ca 4C c th suy ra m hnh tng ng ca 4C nh hnh v. u = h .i + h .u 1 11 1 12 2 i2 = h21.i1 + h22 .u2 u Tr khng vo khi h11 = hi = 1 I2 I1 u ra ngn mch i1 U1 4C U2
u2 =0
u1 h12 = hr = u2
i1 = 0
khuch i in p ngc h mch H s khuch i dng thun ngn mch
i2 h21 = h f = i1
h22 = ho =
u2 =0
i2 h dn ra khi u2 i =0 u vo h mch 1 Tham s h s c k hiu v tnh theo mi cch mc BJT khc nhau
BI GING MN
b1. M hnh mch tng ng Hybrid mch CE

i1 u1 4C i2 u2 u BE
iB
B
iC
hie hreuCE hfeiB
C hoe uCE
uCE iE
uBE
h11 = hie =
u BE iB
= re
u CE = 0
E Tr khng tip gip emitter Ch s ph thuc ca uBE vo uCE, hre rt nh thng b qua
h12 = hre =
u BE uCE
iB = 0
ic h21 = h fe = ib
h22 = hoe =
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= 0
u CE = 0
ic u CE
iB = 0
Trang 67
BI GING MN
b2. M hnh mch tng ng Hybrid mch mc CB,CC

I1 U1 4C I2 U2 UBE (CE)
IB
IC
UCE IE
UEB
IE
IB
IC
IB
IE UEC
IC
UCE
UBC
(CB)
(CC)
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Trang 68
BI GING MN
c. M hnh tng ng tn hiu nh hybrid-

M hnh tng ng tn hiu nh ca BJT xc nh mi quan h gia tn hiu xoay chiu bin nh trong BJT: ib,ube, ic, uce. Cc phng trnh c tnh tng ng xc nh cc m hnh tng ng ca BJT: Tn hiu ln iC = f (vBE , vCE )
I C + iC = f (VBE + vBE , VCE + vCE )

im lm vic tnh (bias) Tn hiu nh DC (bias) Tn hiu nh
iC= I C + ic = f (VBE + vbe , VCE + vce )

ic f vBE vbe +
Q
Q = (VBE , VCE )
f vCE
vce
Q
ic = g m u be + g o u ce
Output conductance (in dn u ra g0)
Trang 69
Transconductance- h dn gm
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BI GING MN
h dn gm, in tr vo
h dn gm: Tng t nh dn ca it, gm l dc ca phng trnh c tnh iC=f(uBE) ti im lm vic tnh Q(IC,UBE,UCE) ch tch cc: iC = I S e (u BE / Vth ) ; iC = I C + ic ; u BE = U BE + ube
i gm = C u BE I S U BE Vth I C q = = = IC e Vth kT Vth
gm,lin kt gia cp cc B-E v dng collector, t l thun vi dng tnh IC v t l nghch vi nhit , n l phn t trung tm trong m hnh .V th = in tr vo ng r c xc nh nh sau: r =
gm IC
in tr vo t l nghch vi dng in phn cc mt chiu IC v t l thun vi h s khuch i dng tn hiu nh

BI GING MN
in p Early
Trong ch tch cc dng in iC tng khng ng k khi in p in p uCE tng. xc nh mi tng quan xt s iu ch rng hiu dng min B. Khi uCE tng, in p phn cc ngc uCB t trn chuyn tip BC tng: uCB = uCE-uBE uCE-0,7V xc nh tc ng ca in p phn cc ngc n dng iC thc hin tnh ton rng ca min B thay i theo uCE v thay vo biu thc tnh iC(uBE, uCE), biu thc ny rt phc tp. n gin hn trong vic tnh ton, ngi ta thng dng xp x thun ty theo kinh nghim xc nh s ph thuc ca dng iC vo in p uCE. Da vo th c tnh ca IC theo in p UCE trong ch tch cc, ngoi suy v xc nh giao im ca chng vi trc UCE, cc c tuyn u i qua im VAn (VAn- Early Voltage)
slope~1/ro
IC
UBE3 UBE2 UBE1 UCE

Trang 71
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-V
BI GING MN
in tr u ra
T th c tuyn IC, hiu chnh phng trnh iC nh sau:
uCE 1 + iC = I S e V An - in dn u ra g0 c xc nh nh sau: iC 1 r0 : in tr u ra g0 = = uCE Q r0
u BE Vth U BE I 1 Vth 1 C g0 = = I S e V V r0 An An
r0 =
VAn IC
- Mi loi BJT c in p VAn khc nhau, ph thuc vo cu to ca BJT, ngi ta thng xc nh in p ny bng thc nghim v dng phng php ngoi suy t th c tuyn ca BJT.
BI GING MN
M hnh tng ng tn hiu nh hybrid-

Da vo cc p/trnh c tnh v tham s xc nh trong ch tn hiu nh, nu b qua cc thnh phn tch in, ta c th xy dng m hnh BJT ch tn hiu nh nh hnh v (m hnh ny thng dng cho BJT hot ng tn s thp):
Ti im lm vic tnh: Q(UBE/IB, UCE, IC)

r =
ib =
gm
.Vth
IC
IC q gm = = IC Vth kT
r0 =
VAn IC
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1 ic = g m vbe + vce ro
vbe u = r r
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BI GING MN
M hnh tng ng tn hiu nh hybrid- ca BJT pnp

M hnh tng ng tn hiu nh ca BJTpnp c th c suy ra t m hnh ca BJTnpn trnh by. Sinh vin t v v tnh tham s cho m hnh ny?
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Trang 74
BI GING MN
d. M hnh tng ng re
CE
Ib B +
R1 1k
CB
Ic + C Iin = -Ie E + re E B
R1 1k
Io = Ic + Ic=Ie B
re E
Ib
Mi quan h gia cc tham s ca cc m hnh tng ng (mc CE):

26m V re = IE
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r = re
1 gm = re
1 ro = hoe
Trang 75
BI GING MN
M hnh tng ng re ca BJT pnp

M hnh tng ng re ca BJT pnp c th c suy ra t m hnh ca BJT npn trnh by. Sinh vin t v v tnh tham s cho m hnh ny?
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Trang 76
BI GING MN
5. Phn loi BJT

C nhiu cch phn loi BJT da trn cc c s khc nhau. Thng thng ta c th phn loi BJT theo cc ch tiu sau Da theo vt liu ch to c cc loi: BJT Gecmani, BJT Silic, v.v.. Da vo cng ngh ch to ta c: BJT khuch tn, BJT tri, BJT hp kim. Da vo tn s cng tc c: BJT m tn, BJT cao tn Da vo chc nng lm vic c: BJT cng sut, BJT chuyn mch, v.v.. Da vo din tch mt tip xc P-N c: BJT tip im, BJT tip mt. BJT c s dng nhiu trong cc ng dng nh trong mch khuch i tn hiu, trong cc mch to dao ng, trong cc mch n p, cc mch khuch i c bit, cc chuyn mch in t...
BI GING MN
6. Mt s mch ng dng dng BJT

BJT c s dng trong nhiu ng dng khc nhau. V d mt s ng dng nh sau: Mch khuch i in p, dng in Mch iu khin Rle. Chuyn mch in t. Mch to ngun dng khng i Mch logic (cng logic) Mch cnh bo Mch ngun Cc mch ng dng c th SV c th tham kho phn bi tp
CU KIN IN T & QUANG IN T Chng 6- FET (Transistor hiu ng trng)

1. Gii thiu chung v FET 2. Transistor trng loi tip gip JFET 3. Cu trc MOS 4. Transistor trng loi cc ca cch ly IGFET
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Ging vin: ThS. Trn Thc Linh B mn KTT
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1. Gii thiu chung v FET

Transistor hiu ng trng FET (Field Effect Transistor) l mt dng linh kin bn dn ng dng hiu ng in tr sut ca bn dn c iu khin bng in trng,y l mt loi cu kin iu khin bng in th. Nguyn l hot ng c bn ca Transistor trng l dng in i qua mt mi trng bn dn c tit din dn in, in tr sut hoc nng ht dn thay i di tc dng ca in trng vung gc vi lp bn dn , do iu khin c dng in i qua n. Lp bn dn ny c gi l knh dn in. Khc vi BJT, FET ch c mt loi ht dn c bn tham gia dn in. FET c ba chn cc l cc.
BJT E B C
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FET S G D Source Gate Drain

Cc ngun: cc ht dn a s i vo knh to ra dng in ngun IS. Cc ca: cc iu khin dng in chy qua knh Cc mng: cc ht dn a s ri khi knh to ra dng ID
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Phn loi chung v FET

FET chia thnh cc loi theo cu trc ca cc ca v ca knh dn nh sau: JFET (Junction FET) : Transistor hiu ng trng iu khin bng chuyn tip PN, cc iu khin G ngn cch vi knh dn bng vng ngho ca chuyn tip PN phn cc ngc. IGFET (Isolated Gate FET) : Transistor hiu ng trng cc ca cch ly vi knh dn, in hnh l linh kin MOSFET (Metal-OxideSemiconductor FET) v MESFET (Metal-Semiconductor FET). * MESFET: cc iu khin ngn cch vi knh dn bng vng ngho ca chuyn tip kim loi-bn dn. * MOSFET cc iu khin cch ly hn vi knh dn thng qua mt lp in mi (SiO2). y mi ng l Transistor trng theo ng ngha ca thut ng ny, v ch c loi ny dng chy qua knh dn mi c iu khin hon ton bng in trng, dng iu khin hu nh bng khng tuyt i, trong khi dng r ca chuyn tip PN hoc Schottky phn cc ngc, cha hon ton bng khng). Mi loi FET cn c chia thnh loi knh N v knh P.
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c im ca FET
Mt s u im ca FET: FET l loi linh kin mt loi ht dn (unipolar device). FET c tr khng vo rt cao. Nhiu trong FET t hn nhiu so vi Transistor lng cc. FET khng b in p ti dng ID = 0, do n l linh kin chuyn mch tuyt vi. C n nh v nhit cao. Tn s lm vic cao. Kch thc ca FET nh hn ca BJT nn c nhiu u im trong IC. Mt s nhc im: Nhc im chnh ca FET l h s khuch i in p thp hn nhiu so vi BJT
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2. Transistor trng loi tip gip - JFET

2.1. Cu to ca JFET 2.2. Nguyn l hot ng ca JFET 2.3. Cc cch mc v h c tuyn ca JFET 2.4. Phn cc cho JFET 2.5. Cc m hnh tng ng ca JFET 2.6. Mt s ng dng ca JFET
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2.1 Cu to ca JFET (1)

G G P+ D Knh dn N P+ S S Knh N S Knh P D G D N+ Knh dn P N+ S D G
Chuyn tip P-N
JFET cu to gm: Mt knh dn c lm t bn dn N (JFET knh dn N) hoc P (JFET knh dn P), c 2 in cc 2 u l cc ngun S v cc mng D. in cc th 3 l cc cng G, gia cc ny v knh dn c mt chuyn tip PN, trong min bn dn cc cng c pha tp mnh hn nhiu so vi knh dn vng in tch khng gian (vng ngho) ca chuyn tip PN lan ch yu v pha knh dn. JFET hu ht u l loi i xng, c ngha l khi u trong mch ta c th i ch hai chn cc S v D cho nhau th cc tnh cht v tham s ca JFET khng h thay i
2.1 Cu to ca JFET (2)

JFET cng sut thp
JFET v kim loi JFET cng sut cao
JFET v nha
JFET v nha tng hp vi u nhit kim loi

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JFET v hon ton bng kim loi
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2.2 Nguyn l hot ng ca JFET (1)

Nguyn l hot ng ca JFET knh loi N v knh loi P ging nhau. Chng ch khc nhau v chiu ca ngun in cung cp l ngc du nhau. JFET c phn cc sao cho vng chuyn tip PN bao quanh knh dn lun c phn cc ngc, v dng cc ht dn a s i vo knh to ra dng IS. Nh vy ngun phn cc mc sao cho: vi JFET knh n: UDS > 0 v UGS < 0 v vi JFET knh p: UDS < 0; UGS > 0. D
a) JFET knh N G S D b) JFET knh P ID UDS EG +
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G RD + + EG UGS S
ID UDS RD + ED
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UGS
ED
2.2 Nguyn l hot ng ca JFET (2)

Trong phn ny chng ta s trnh by v nguyn l hot ng ca JFET knh N, sau suy ra nguyn l hot ng ca JFET knh P. Do tc dng ca cc in p UGS v UDS, trn knh dn xut hin 1 dng in (l dng in t vi JFET knh N) hng t cc D ti cc S gi l dng in cc mng ID. Dng ID c ln ty thuc vo cc gi tr UGS v UDS v phn cc ngc ca chuyn tip PN ph thuc mnh vo c 2 in p ny nn dn in ca knh ph thuc mnh vo c 2 in trng ny. Nh vy v c bn c th ni rng JFET l mt in tr c tit din thay i c, v tit din ny c thay i bi in p iu khin. Nu xt ring s ph thuc ca ID vo tng in p khi gi cho in p cn li khng i (coi l mt tham s) ta nhn c hai quan h hm quan trng nht ca JFET l:
I D = f1 ( U D S ) U
GS
= co nst
c tuyn ra c tuyn truyn t

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I D = f 2 (U GS ) U D S = co nst
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c tuyn ra ca JFET knh N (1)

UGS G D P+ N P+ S 12 IDbh 8 6 UGS G D ID P+ N P+ S 4 2 2 UP 4 6 UGS G UDS D A P+ N P+ S D G P+ N P+ UDS= Up S 8 10 12 UDS (V) 10 ID (mA) A UGS<0V Vng nh thng (Avalanche Region) B G UGS P+
Vng bo ho (Pinchoff Region)
N S B
(a)
P+
Vng m tnh (Ohmic Region)
(e)
UGS
UDS=Udt
(b)
ID = f1(UDS ) UGS=const
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(c)
(d)
UDS
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a/ im 0: ng vi mt gi tr nht nh no ca UGS0,vng chuyn tip PN gia G v knh phn cc ngc, nu UDS=0 th ID=0, rng ca min in tch khng gian ng u v c nh b/ Vng ohmic (Vng Triot): Khi UDS tng dn, ID tng dn, lc u UDS cn nh, st p ca n gy trn in tr knh nh hng khng ng k n rng ca min in tch khng gian ( c xc nh bi UGS), nn ID tng tuyn tnh theo UDS, vng ny c gi l vng m tnh, lm vic ging nh in tr thun c/ im tht A: Khi UDS tng ln lm cho ID ln n mc st p do dng ny gy ra trn knh lm tng ng k U phn cc ngc chuyn tip PN gia cc G v knh, min in tch khng gian lan su vo knh, lm cho in tr knh tng dn, ID tng chm li. Nu tip tc tng UDS n thi im UDS=UP, th hu nh ID khng tng mc d tip tc tng UDS.. im UDS=UP c gi l im tht A, UP l in p tht ca knh, dng in ID ng vi im tht gi l dng bo ho IDbh d/ Vng bo ho (vng lm vic tch cc): Khi UDS tip tc tng vt qua im tht A, UDS>UP, th ID hu nh khng tng, ID=IDbh, do khi UDS tng vng in tch khng gian cng lan su vo knh v in tr knh cng tng ln t l vi UDS, do dng khng i. Nhng gi tr dng IDbh li tng nhanh theo UGS.

e/ im nh thng B: Khi UDS tng qu ln, in p phn cc ngc gia G v knh tng mnh, n khi UDS=Udt th hin nh thng theo hiu ng thc l xy ra, do dng ID tng t ngt khi UDS tng. im B gi l im nh thng, vng ngoi im B gi l vng nh thng ca knh H c tuyn ra ca JFET Khi UGS m dn s phn cc I12 DSS ngc ca G v knh cng tng, 10 in p tht UP knh t ti im tht cng nh, ng t nt 8 trn h c tuyn ni cc im 6 tht vi nhau Tng t, vi im nh thng B, 4 khi UGS cng m vic nh thng 2 chuyn tip PN xy ra sm hn, in p nh thng cng nh hn
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ID (mA)
Vng ohmic
Vng bo ho
A
UGS = 0V
Gim dn UGS 0,5 V 1,0 V 1,5 V
UGS0
2 4 UP0 6 8 10 12
Vng nh thng
UDS (V)
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c tuyn truyn t ca JFET knh N (1)

I D = f1 (U GS ) U DS =const
D G S Knh N UGS0 3 2 1 ID (mA) ID (mA) 12 10 8 6 1,5 V 4 2 UGS0 2 4 UP0 6 8 10 12 UDS (V) UGS = 0V Gim dn UGS 0,5 V 1,0 V B
ID
UDS
12 IDSS UDS = 10V 10 tng 8 6 4 2
IDSS
0 UGS (V)
c tuyn truyn t ca JFET m t mi quan h gia ID v in p UGS ng vi mt gi tr nht nh ca UDS. Dng c tuyn truyn t khi JFET lm vic vng bo ho nh hnh bn tri. c tuyn xut pht t mt gi tr UGS0, ti ID = 0, gi l in p kho. Khi tng UGS, ID tng gn nh t l do dn in ca knh tng theo mc gim phn cc ngc ca tip gip PN. Lc UGS = 0, ti vng bo ho ID = IDSS, , vy IDSS l dng tnh cc mng khi khng c in p cc ca
c tuyn truyn t ca JFET knh N (2)

Quan h gia ID v UGS c xc nh bi phng trnh Shockley: Phng trnh Shockley:
U U U GS GS DS I DSS 21 1 U U U GS 0 GS 0 GS 0 ID = 2 U I DSS 1 GS khi U GS 0 U GS 0 U GS 0
2
ID (mA) 12 IDSS UDS = 10V 10 tng 8 6
Vng ohmic Vng bo ho

UGS0 3
UDS
4 2 2 1 0 UGS (V)
Trong : IDSS l dng cc mng bo ho khi UGS= 0, khi knh m rng nht v lc ny ID t gi tr ln nht ca n, nn nh vy c ngha l IDSS l dng cc mng cc i c th t c ca JFET UGS0 l in p kho knh hay in p ngt knh, v ID=0 khi rng ca knh dn bng 0, nn nh vy c ngha l UGS0 l th p t ln cc cng lm cho JFET b kho li hon ton. IDSS v UGS0 l 2 tham s quan trng ca JFET dng nhiu khi thit k mch.
Cc h c tuyn ca JFET knh N

ID (mA) 12 UDS = 10V IDSS 10 UDS1 8 6 4 UGS0 3 2 1 2 0 UGS (V) 4 2 UGS0 2 4 UP0 6 8 10 12 UDS (V) ID (mA) 12 10 8 6 1,5 V A UGS = 0V Gim dn UGS 0,5 V 1,0 V B
IDSS
D G S Knh N
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IDSS>0 Dng IDbh khi UGS=0V UGS0<0 - in p kha knh ID

2 U U U GS I DSS 2 1 GS DS 1 U GS 0 U GS 0 U GS 0 ID = 2 U GS I DSS 1 khi U GS 0 U GS 0 U GS 0
Vng ohmic Vng bo ho

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Cc h c tuyn ca JFET knh P

ID (mA) IDSS UGS = 0V B 0,5 V Gim dn UGS 1,0 V UDS1 UGS 0 UGS0 1,5 V UGS0 UDS A ID (mA)
IDSS
UDS1 UP0
IDSS>0 Dng IDbh khi UGS=0V UGS0>0 - in p kha knh

D G S
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ID
2 U U U GS I DSS 21 GS DS 1 U U U GS 0 GS 0 GS 0 ID = 2 U I DSS 1 GS khi 0 U GS U GS 0 U GS 0
Vng ohmic Vng bo ho

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Tham s c bn ca JFET knh N

Tham s gii hn: Dng cc mng cc i cho php: IDmax - l dng in ng vi im B trn c tuyn ra khi UGS = 0; IDmax 50mA. Dng in D - S cc i cho php v in p UDSmax UDS.max = UB /(1,2 1,5) (c vi chc vn) UB : in p nh thng ti im B in p kho cc i UGS0 . Nu UGS<UGS0, knh b kho ID=0, RDS Tham s lm vic gm c: U DS ri = rd = U = const I D in tr trong hay in tr vi phn u ra: ( 0,5 M), ri th hin dc ca c tuyn ra trong vng bo ho. H dn ca c tuyn truyn t: I D S = gm = U = const U GS DS (gm cho bit kh nng iu khin in p cc ca ti dng cc mng , gi tr in hnh gm=(7 10) mA/V)
GS
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Tham s c bn ca JFET knh N

h dn cc i:
S0 = g m0 = 2 I DSS U P0
in tr vi phn u vo:
rvao =
U GS I G
rvo do tip gip P-N quyt nh, c gi tr khong 109 H s khuch i in p :

= UDS UDS u = DS UGS I =const UGS I =const uGS I =const D D D
So snh cc cng thc tnh h dn gm, in tr trong ri v h s khuch i in p , ta c cng thc sau: = S.ri c tr s khong vi trm ln ( s mc S chung)
So snh gia BJT v FET

BJT JFET
S dng c 2 loi ht ti in, hot Ch s dng 1 loi ht dn chnh, ng bng cch phun ht ti khng c hin tng phun ht ti Linh kin iu khin bng dng (Dng Linh kin iu khin bng th (Th li li vo iu khin dng li ra vo iu khin dng li ra) in tr li vo nh (v dng li vo in tr li vo rt ln (v dng li l dng ca chuyn tip PN phn cc vo l dng ca chuyn tip PN phn thun) cc ngc), IG rt nh (1pA1nA) in tr li ra nh hn in tr li ra ln hn S dng cho cc tn hiu ln hn (cc S dng cho cc tn hiu nh (Cc tng u trong h khuch i) tng cui trong h khuch i) Nhiu ln hn n nh nhit km hn Nhiu nh n nh nhit tt
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2.3 Cc cch mc v h c tuyn ca JFET

Cng tng t nh BJT, JFET cng c 3 cch mc ch yu l: Chung cc ngun (CS), chung cc mng (DC), v chung cc ca (CG) Trong kiu CS thng c dng nhiu hn c v kiu mc ny cho h s khuch i in p cao, tr khng vo cao. Cn cc kiu mc CD, CG thng c dng trong tng khuch i m v khuch i tn s cao
+ED RD C1 Uvao RG Q1 RS (CS)
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+ED C1 Ura C3 (CD)

C2 Uvao
+ED RD C C1 Uvao Q RS (CG)
Q1 C2 RG RS Ura
Ura
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So snh v ch lm vic gia JFET v BJT

BJT Vng bo ho Vng tch cc Vng ct Vng nh thng JFET Vng Ohmic Vng bo ho Vng ct Vng nh thng
S u vo/ u ra Khuch i dng Khuch i p Pha tn hiu Tr khng u vo Tr khng u ra ng dng

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CS G/D c C (=1/10 BJT) o pha Rt ln (RGS) Nh (RD//ri)
CG S/D khng c ng pha nh Ln Hu nh khng s dng
CD G/S c khng ng pha Rt ln (RGD) Nh (RS//1/gm)
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2.4 Phn cc cho JFET (1)

Cng ging nh BJT, JFET cng cn c thit lp im lm vic mt chiu trc khi c s dng. Vic phn tch, thit k mch phn cc cho JFET n gin hn ca BJT. V khi phn tch thit k cng thng dng phng php gn ng bng th. ng ti tnh ca JFET cng c v trn c tuyn ra ca n. im lm vic cn xc nh Q(UGS, UDS, ID). im lm vic tch cc cn phi nm trn vng c tuyn bo ho. C nhiu kiu mch phn cc khc nhau, phn tch, tnh ton mch phn p cho JFET s c da trn cc iu kin sau: Dng cc cng rt nh, b qua, coi nh cc ca h mch in p UDS ln JFET lm vic trong vng bo ho (vng pinchoff), khi ID =IDbh const ng vi mi gi tr UGS xc nh. c tnh truyn t s c s dng phn tch theo phng php th , kt hp vi cc phng php phn tch mch KVL, KCL. S dng phng trnh Schockley
2.4 Phn cc cho JFET (2)

Cc phng php phn cc cho JFET (c so snh vi BJT) nh sau:
BJT Dng IB c nh nh thin t cp Khng tng ng nh thin hi tip m Emitter nh thin hi tip m E v C JFET nh thin cc cng (Gate bias/ Fixed bias) nh thin t cp (Voltage-divider bias) T nh thin (Self bias) Khng tng ng Khng tng ng
nh thin hi tip m Collector Khng tng ng
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nh thin in p cc G c nh (Gate bias/Fixed bias)

Mch nh thin nh hnh v: S dng ngun p EG phn cc ngc cho chuyn tip PN gia cc G v knh dn. Tham s ca mch: EG= - 2V; ED= +20V Tham s ca JFET: UGS0= -3,5V;IDSS= 5mA Tnh ton im lm vic tnh n nm gia ng ti tnh. Ch : do phi dng 2 ngun v n nh khng cao nn mch phn p ny t c s dng.
IDQ ED/RD ID (mA)
+ED RD C1 Uvao RG EG +
ID
Q1
C2
Ura
Q UGSQ= -2V
UDS (V) UDSQ
ED
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Mch t nh thin (Sefl bias)

Mch nh thin nh hnh v: S dng mt in tr thch hp mc ni tip vi cc S cung cp in p cho cc G. ED= +20V, Tham s ca JFET: UGS0= -3,5V; IDSS= 5mA Uvao Tnh ton im lm vic tnh nu UDSQ=10V
ID (mA) +ED RD C1
ID
Q1
C2 Ura
IS
RG
RS
IDSS UDS = 10V RS2 Q2 RS1 Q1 IDQ1 UGS (V)
UGS0=-3V UGSQ1 UGSQ1

Mch nh thin t cp
S dng 2 in tr phn p R1, R2 to ra in p nh thin cho cc G. Cho ED= +20V, Tham s ca JFET: UGS0= -3,5V; IDSS= 5mA Tnh ton im lm vic tnh nu UDSQ=10V
+ED R1 C1 Uvao R2 RD Q1 RS
ID (mA)
ID
C2
Ura
IDSS UDS = 10V RS2 Q2 RS1 Q1 2mA UGS UGS0=-3V UGSQ1 UGSQ1
UG
2.5 M hnh tng ng ca JFET

a/ M hnh tng ng 1 chiu v tn hiu ln b/ M hnh tng ng tn hiu nh
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a/ M hnh tng ng 1 chiu v tn hiu ln

N_JFET P_JFET + RGS K.IDSS UDS 2
a/ M hnh tng ng JFET lm vic vng bo ho

UGS + + UGS RGS K.IDSS UDS +
U K = 1 GS U GS 0 b/ M hnh tng ng JFET lm vic vng ohmic

UGS +
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U K = 1 GS U GS 0
+ R = Vp DS RGS RDS UDS -
+ UGS Trang 28
RGS RDS UDS +
I Dbh
b/ M hnh tng ng tn hiu nh tn thp (1)

M hnh tng ng tn hiu nh ca JFET xc nh mi quan h gia tn hiu xoay chiu bin nh trong JFET: id, ugs. Cc phng trnh c tnh tng ng xc nh cc m hnh tng ng ca JFET: Tng qut :
i D = f ( u GS , u DS ) = I D + i d = f (U GS + u gs , U DS + u ds )
Gi s im lm vic Q(UGS,UDS,ID)
f f id = u gs + uds = g mu gs + g d uds uGS Q u DS Q

gm - h dn vo, gd - h dn ra M ta c:
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uGS iD = f (uGS ) = I DSS 1 U GS 0
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h dn vo:
gm f = u GS 2 I DSS Q = U GS 0 U 1 GS U GS 0 2 I DS . I DSS = U GS 0
in p UGS cc i l UGS0, Nh vy h dn cc i l :
gm0 = 2 I DSS U GS 0
gm U = g m 0 1 GS U GS 0
Thc t th IDbh cng s thay i theo UDS mc d s thay i ny l khng ng k. Phng trnh tnh dng ID c hiu chnh c tnh n nh hng ca in p UDS nh sau:
u i D = f (u GS , u DS ) = I DSS 1 GS U GS 0
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u 1 + DS V An
VAn - in p Early (30 300V)

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h dn ra :
gd = i DS u DS = I DSS
Q
u 1 GS U GS 0
=
Q
I 1 = D V An V An
in tr vi phn u ra:
ri = rd =
u DS iD
1 VAn = gd ID
M hnh tng ng tn hiu nh tn thp ca JFET

N_JFET
gm0 =
2 I DSS U GS 0

P_JFET
gm.ugs
S
rd
U g m = g m 0 1 GS U GS 0
gm.ugs
S
rd
2I DSS UGS 2 I DS.I DSS 1 gm = U = U UGS0 GS0 GS0

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2.6 Mt s mch ng dng n gin ca JFET

B khuch i xoay chiu dng JFET Mch n dng dng JFET
VDS
RL CC u v o m c h D Q1 S RG RS
u r a m c h
+
VDD
+
VS
CS
RL
VRL
I DS(b o ho)
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3. Cu trc MOS
3.1 Cu trc MOS trong iu kin cn bng nhit 3.2 Cu trc MOS khi c in p phn cc 3.3. c tuyn Q-V 3.4. Mt s hiu ng bc hai 3.5. Cc m hnh dng cho linh kin MOS
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3. Cu trc MOS
Oxide (SiO2)
ox =3.90
Gate (n+ poly)
0
Body (p-type substrate) x
Rt mng!
tox ~1nm
s =11.70
MOS = Metal-Oxide-Semiconductor: Cu trc t in MOS gm c lp in cc kim loi ph ln lp bn dn c nng pha tp rt cao (n+ hoc p+) tng ng nh lp Metal (Min Gate), v lp bn dn nn (loi p hoc n)-lp Semiconductor (min Body), gia chng c lp cch in rt mng dng Oxide SiO2. Lp kim loi Metal thng dng lp bn dn pha tp cao n+ hoc p+ Lp bn dn nn dng loi p ta c cu trc NMOS, nu dng loi n ta c cu trc PMOS
ng dng ca cu trc MOS

Cu trc MOS v ang l cng ngh ch o to ra cuc cch mng v lnh vc in t. ng dng ca cu trc MOS: Dng trong nhiu vi mch tng t v s: MOSFET l phn t c bn trong h vi mch CMOS Dng nhiu trong cc vi mch nh: DRAM, EPROM Dng c cc thit b nh nh camera CCD (Charge-Couple Device) Dng trong cc loi mn hnh ch th nh Mn hnh ma trn tinh th lng tch cc
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3.1 in trng ca N-MOS trong iu kin cn bng nhit (1)

M hnh cu trc N-MOS l tng nh hnh v: Min kim loi Metal (Min Gate) khng to thnh mt vng tch in m n ch tch in trn b mt Lp oxide l cht in mi, cch in hon ton, khng tch in Vng bn dn nn (Min Body): c th hnh thnh vng in tch khng gian. iu kin cn bng khng th c thit lp thng qua lp oxide nn cn phi c dy dn chuyn in tch gia lp kim loi v lp bn dn.

log p0, n0
+ V ox + + + + + + + + + + VB Body (p-type substrate)
Eox
Xd0
+ Ion Donor + - Ion Acceptor -
Qua dy dn s c s khuch tn in t t min kim loi G sang min bn dn B v l trng t min B sang min G. Min B s tch in -, min G tch in +, gia chng hnh thnh in trng Eox hng t G sang B. in trng ny lm hnh thnh lp in tch dng ngay di y ca min G v min in tch m trong min B ngay di lp oxide (Do Eox cun in t v l trng ngc vi dng ktn) Min in tch trong min bn dn to ra mt vng chuyn tip c rng Xd0 ngay st lp oxide.

Mt in tch khng gian: Vng in tch khng gian ti lp bn dn ngay st lp oxide c xp x (xp x chuyn tip) c nng in tch ng u l qNa Ti min G c lp in tch + mng ngay st tch in QG (C/cm2)
Vy mt in tch khng gian trong MOS nh sau:
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in trng trong cu trc N-MOS Tch phn 2 v biu thc Gauss ta c:
Ti gianh gii gia bn dn v oxide, hng s in mi thay i, nh vy in trng cng thay i:
Thay biu thc ca 0(x) vo biu thc tch phn ta tnh c biu thc tnh phn b in trng trong cu trc MOS:

0 khi xd0 < x qN a khi 0 < x < xd0 (x xdo) S E0(x) = qN x S E0 x = 0+ = a d0 khi tox < x < 0 0x 0x 0 khi x < t0x
in th tnh in: in th tnh in ti min G (n+)
?
in th tnh in ti min B:
Hiu in th ni:
in th tip xc
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3.2 in trng ca N-MOS khi c phn cc (1)
Khi c in p phn cc UGB t vo nMOS, tu theo gi tr in p phn cc UGB vng in tch khng gian thay i v c th tn ti cc trng thi khc nhau. Khi c in p phn cc, in th ni t qua cu trc MOS thay i t : B > B+UGB Do lp oxide cch in nn dng in ti bt k v tr no trong cc lp bn dn J=0, nh vy Jdriff = -Jdiff Ti bin gia lp oxide v bn dn, in trng pha lp oxide Eox v in trng pha bn dn nn ES lun tho mn iu kin sau: Eox/ES 3
3.2 in trng ca N-MOS khi c phn cc (2)

Khi UGB>0, ban u ngun cun in t t do t G sang B v l trng t B sang G, nh vy vng chuyn tip s c m rng hn v khng i khi t trng thi cn bng. Ngc li nu UGB<0, ban u ngun cun in t t do t B sang G v l trng t G sang B, nh vy vng chuyn tip s thu hp v khng i khi t trng thi cn bng. Nh vy tu theo in p phn cc m cu trc MOS c th tn ti cc trng thi nh sau: Trng thi bng phng (Flatband): UGB= UFB = -B Trng thi tch lu (accumulation): UGB< UFB Trng thi chuyn tip (depletion): UFB < UGB< 0 Trng thi chuyn tip (depletion ): 0< UGB < UT Trng thi ngng (threshold): UGB = UT Trng thi o (inversion): UGB > UT
Trng thi nng lng bng phng (Flatband):UGB=UFB = -B

UGB=VFB= -B<0
+ Body (p-type substrate)
QG (VGB =VFB ) = 0
Khi t in p phn cc UGB=VFB=-B<0, in p phn cc b vi hiu in th ni B,, c tc dng cun in t t min B sang min G, in tch ca cc min G v B gim dn n bng 0, v cc vng tch in bin mt. Vi in kin phn cc nh vy MOS c di nng lng bng phng flatband. in p VFB gi in p flatband. Mt in tch min G: QG(VFB) = 0. Trng hp ny ban u, dng cun do UGB to ra ngc vi dng khuch tn.
Trng thi tch lu (accumulation): UGB< UFB

UGB<VFB
QG = Cox (VGB VFB )

++++++++++++++++++
Body (p-type substrate) (+) L trng
QB = QG
(-) in t t do
Nu in p phn cc gim nh hn VFB, cu trc nMOS ging nh t in 2 bn cc song song. Min G tch in (in tch do in t t do to ra), min B tch in + (in tch do l trng to ra) Mt in tch ca min G:
QG = Cox (VGB VFB )
Cox - mt in dung ca t MOS Trng hp ny ban u dng cun do UGB to ra ln hn v ngc chiu dng khuch tn
Trng thi chuyn tip (depletion): UFB < UGB< 0

+
0>UGB>VFB
QG (VGB ) =QB
+ Ion Donor +
- Ion Acceptor + + + + + + + QB =qNa Xd (VGB ) Body (p-type substrate)
Tng t nh iu kin cn bng nhit, mc d UGB<0, nhng do UGB>VFB nn vn tn ti dng khuch tn in t t min kim loi G sang min bn dn B v l trng t min B sang min G qua dy dn v vt qua in th ca ngun cung cp. Nh vy Min B s tch in +, min G tch in -, gia chng hnh thnh in trng Eox hng t G sang B. in trng ny lm hnh thnh lp in tch dng ngay di y ca min G v min in tch m trong min B ngay di lp oxide to ra mt vng chuyn tip c rng xd ngay st lp oxide Trng hp ny ban u dng cun do UGB to ra ngc chiu v nh hn dng khuch tn.
Trng thi chuyn tip (depletion ): 0< UGB < UT

QG (VGB ) = QB + 0<UGB + + + + + + ++ + QB = qNa X d (VGB ) Body (p-type substrate)
Khi 0 < UGB < UT, tng t nh trng hp UFB < UGB< 0, Vng chuyn tip c hnh thnh ngay st lp oxide c rng c m rng hn. Min tch in + c hnh thnh pha y ca min G ngay st lp oxide v min in tch - c hnh thnh pha nh ca min B ngay st lp oxide. in tch m to ra do cc Ion Acceptor v nng in t t do tng ln. Khi UGB tng th vng chuyn tip cng c m rng. Ti vng chuyn tip pha min B bn dn p, khi UGB tng nng in t tng dn, nng l trng gim dn. Trng hp ny ban u dng cun do UGB to ra cng chiu vi chiu dng khuch tn
Trng thi ngng (threshold): UGB = UT

VGB = VT
s
+ + + + + + + + ++ + - - - - Body (p-type substrate)
Khi tng UGB, ti min in tch chuyn tip trn nh min B, nng in t tng dn, nng l trng gim dn. Khi UGB =UT ti nh ca min B nng in t bng nng l trng vng bn dn cn trung ho n(0)=Na, cn nng l trng bng nng in vng bn dn cn trung ho p(0)=ni2/ Na. Trng thi ny gi l trng thi ngng - Bn dn bt u chuyn t loi p sang loi n. in p UT c gi l in p ngng. - H s nn
Trng thi o (inversion): UGB > UT
VGB = VT
s
+ + + + ++ ++ + + + - - Body (p-type substrate)
(Lp o ht dn, tng ng bn dn n)
Khi UGB>UT nng in t t do ti b mt ca min bn dn B tip gip vi lp oxide tng ln hn Na, trng thi o ht dn xy ra. Lp in t ti b mt c gi l lp o, bn dn ti tng ng bn dn n Nng in t t do ti b mt c iu ch theo in p UGB, nu UGB tng th n(0) tng => in tch ca lp o Qn tng.
vi
3.3 ng cong Q-V ca cu trc N-MOS

QG
v in
tion eple d
si er
on
QN (VGB )
QB,max
ac
u m cu
n tio la
VFB
VTh
VGB (V )
Trong trng thi tch lu v trng thi o in tch ca vng chuyn tip pha min G tng tuyn tnh theo in p phn cc UGB. Trong trng thi chuyn tip in tch tng rt chm do in p phn cc ch yu ri trn in tr ca vng in tch chuyn tip.
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Trang 50
4. Transistor trng loi cc ca cch ly IGFET

4.1 Cu to v nguyn l hot ng ca MOSFET loi knh t sn (Depletion Type MOSFET- DMOSFET) 4.2 Cu to v nguyn l hot ng ca MOSFET loi knh cm ng (Enhancenment Type MOSFET- EMOSFET) 4.3 Cc cch mc v h c tuyn ca MOSFET 4.4 Phn cc cho MOSFET 4.5 Cc m hnh tng ng ca MOSFET 4.6 Cu trc MOS
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Trang 51
4.1 Cu to ca MOSFET (1)

MOSFET l loi linh kin in hnh trong h FET c cc ca G cch ly. MOSFET v c bn c cu to da trn cu trc MOS nh sau:
Trn bn dn (bn dn nn B), ngi ta to ra 2 vng bn dn khc vi bn dn nn. V d loi nn loi p, th to ra 2 vng bn dn loi n+ cch nhau mt khong nht nh, 2 vng bn dn n ny c dn ra ngoi thnh 2 in cc S v D Vng bn dn gia S v D hoc bng cch pha tp (MOSFET knh t sn) hoc do thin p trong khi hot ng (MOSFET knh cm ng) bao gi cng c loi ht dn o so vi . Vng ny c gi l vng knh dn, nh vy tc l bao gi ta cng c mt chuyn tip p-n gia v knh dn Pha trn knh dn ngi ta ph lp in mi mng (SiO2), v trn lp in mi ny ph tip lp kim loi to ra in cc G ca MOSFET, G c cch ly hon ton vi knh dn, tng t nh cu trc MOS

+ MOSFET thng c thm in cc th 4 gi l cc B (substrate), cc (cc nn) ngn cch vi knh dn bng chuyn tip p-n nn cng c th dng n nh mt cc iu khin na bn cch G. Tuy nhin tch cht iu khin ca cc B thng khng c s dng v n thng c ni tt vi cc ngun. - Ngoi cch phn loi theo knh dn loi n v p, MOSFET cn c phn loi theo cch to ra knh dn nh sau: + D-MOSFET (Depletion MOSFET): MOSFET knh t sn (MOSFET kiu lm ngho). Knh dn c ch to sn l loi bn dn khc vi bn dn nn. in p gia cc G v cc S lm ngho mt phn knh dn (tng t nh JFET). + E-MOSFET (Enhancement MOSFET): MOSFET knh cm ng (MOSFET kiu lm giu), knh dn cha c ch to trc. Knh dn s c to ra khi in p t ln cc G thch hp v c gi tr ln hn in p ngng no th s to lp o ht dn pha di cc cng, lp ht dn o ny tng t nh mt knh dn ni cc S v D.

D-MOSFET S G D D G S D G S D G S D G S G S D B G S D G S D S B p+
Substrate (n)
E-MOSFET B D G S D B S n+
Substrate (p)
D n+
n+ Knh dn (n) n+
Substrate (p)
B G
B G
D p+
p+ Knh dn (p) p+
Substrate (n)
B
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B
Trang 54
4.1 Hnh nh ca MOSFET
MOSFET v kim loi
MOSFET v nha
MOSFET cng sut cao
MOSFET v nha tng hp vi u nhit kim loi

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MOSFET v hon ton bng kim loi

Trang 55
4.2 Nguyn l lm vic ca MOSFET

Nguyn l hot ng ca MOSFET knh loi N v knh loi P ging nhau. Chng ch khc nhau v chiu ca ngun in cung cp l ngc du nhau. MOSFET c phn cc sao gia (cc B) v knh to ra vng chuyn tip ngho bao quanh knh dn, v dng cc ht dn a s i vo knh t cc S v ra khi knh t cc D to ra dng ID. Nguyn l hot ng c bn ca MOSFET l cc cng G kt hp vi lp in mi nm di n v knh dn bn dn nm di lp in mi chnh l cu trc t in MOS. in p iu khin tc dng ln cc cng s to ra mt in trng lm bin thin nng ht ti t do trong knh dn, hoc thit din ca knh dn, dn ca knh s thay i. Dng in ID ph thuc vo in p UGS v UDS. c tuyn quan trng ca MOSFET cng l c tuyn ra v c tuyn truyn t tng t nh JFET. c tnh ca MOSFET v c bn tng t c tnh ca JFET nhng c nhiu im u vit hn.
Nguyn l lm vic ca D-MOSFET (1)

Trong D-MOSFET bng cng ngh ch to sn knh dn bn di cc G, in p cc G iu khin dng gia cc ngun v cc mng bng cch lm ngho mt phn knh (thit din ca knh b thu hp), tng t nh JFET. V khi D-MOSFET hot ng knh dn c sn ng dn li nn D-MOSFET cn c gi l MOSFET thng m. Thng thng cc nn B c ni tt vi cc ngun S. Ngun phn cc sao cho chuyn tip PN gia cc bn dn nn v knh dn lun phn cc ngc, dng ht a s ca knh dn i ra cc D
a) D-MOSFET knh N G D ID UDS EG +
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RD +
b) D-MOSFET knh P G
D ID UDS RD + ED
Trang 57
UGS
ED
+ EG
UGS
Nguyn l lm vic ca D-MOSFET (2)

D-MOSFET knh n lm vic theo 2 nguyn l sau: Nguyn l tn hao: Khi UGS0, nhng in tch dng s c cm ng vo knh dn n, nhng in tch dng ny trung ho bt in t trong knh n v hnh thnh mt vng chuyn tip ngho ht dn ti knh ngay pha di cc G lm cho in tr ca knh tng ln, dng ID gim xung. UGS cng gim th vng chuyn tip cng m rng v ID cng gim. S thay i in tr knh dn do cc ht dn mi cm ng ra bi in trng cc G trung ho bt ht dn vn c ca knh do in tch tri du nhau ngha l lm tn hao ht dn. Vi UGS=const, khi UDS tng dn th vng chuyn tip PN gia B v knh phn cc ngc lan su hn vo knh v vng chuyn tip ngho ht dn cng s m rng, knh s b tht dn v pha cc D. c tuyn ra ca D-MOSFET cng tng t nh ca JFET. Cu trc MOS gia G v knh lm vic trng thi chuyn tip Nguyn l tng cng: Khi UGS>0, khi y di tc dng ca in trng cc G cc in t c cm ng vo knh dn lm tng nng ca in t trong knh dn do lm gim in tr sut ca knh. Nu UGS tng th ID cng s tng. Cu trc MOS gia G v knh lm vic trng thi tch lu. Vi UGS=const, khi UDS tng dn th vng chuyn tip PN gia B v knh phn cc ngc lan su hn vo knh, v nng in t trong knh cng gim dn v pha cc D, nh vy knh cng s b tht dn v pha cc D.
D-MOSFET lm vic theo nguyn l lm vic tn hao

Lp chuyn tip UGS<0 G D S + + + + n n+
Substrate (p)
12 IDbh 8 10 ID (mA) A UGS<0V Vng nh thng (Avalanche Region) B
n+
6 4 2 2 UP 4
Vng bo ho
(a) G D
B UGS<0 S D
G + ++ +
UGS<0 S
10
12 UDS (V)
G n + ++ + n+
UGS<0 S
+ ++ + n+
Substrate (p)
n+
n+
n+
Substrate (p)
n+
Substrate (p)
UGS
(b)
UGS=UP B
(c)
UGS>UP
B (d)
Trang 59
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D-MOSFET lm vic theo nguyn l tng cng

Lp in tch tch lu G n UGS>0 S
12 IDbh10 8 ID (mA) A UGS>0V B
-----------
n+
Substrate (p)
n+
6 4 2 2 UP 4
Vng bo ho
(a) G D
B UGS>0 S D
UGS>0 S
10
12 UDS (V)
D n n+
UGS>0 S
- - - - - --------
-------
- ---
n+
Substrate (p)
n+
n+
n+
Substrate (p)
n+
Substrate (p)
UGS
(b)
UGS=UP B
(c)
UGS>UP
B (d)
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Cc h c tuyn ca D-MOSFET knh N

ID (mA)
IDmax
Ch ngho hd IDSS
IDmax IDSS
Ch giu hd
Vng Ohmic
A
ID (mA)
UGS = +1V
UGS = 0 V 1,0 V 2V UGS0
Ch giu hd Ch ngho hd
UGS0 3 2 1 0
UGSmax
UGS (V)
2
2
4 UP 6
10
12
UDS (V)
U GS I D = I DSS 1 U khi GS 0
U GS 0 U GS U GS max
Vng bo ha
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Trang 61
Cc h c tuyn ca D-MOSFET knh P

ID (mA)
IDmax
IDSS
UGS = -1V
ID (mA)
UGS = 0 V 1,0 V 2V UGS UGS0
Vng Ohmic
Trang 62
IDmax
IDSS
UGSmin
-1
UGS0
UDS
U GS I D = I DSS 1 U khi GS 0
U GS min U GS U GS 0
Vng bo ha
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Nguyn l lm vic ca E-MOSFET

Trong E-MOSFET khng c sn knh dn gia S v D m knh dn ny s c to ra khi t in p ln cc cng thch hp ln hn gi tr in p ngng no UT th s c s to thnh lp o ht dn ngay di cc cng to thnh knh dn ni gia S v D (tng t nh cu trc MOS trong trng thi o). V knh dn ch c to ra khi c in p trn cc G nn loi MOSFET ny cn gi l MOSFET thng ng. Thng thng cc nn B c ni tt vi cc ngun S. Ngun phn cc sao cho to thnh lp o ht dn ti bn dn nn, dng ht a s ca knh dn i ra cc D. a) E-MOSFET D knh N G UGS S ID UDS + EG>0 www.ptit.edu.vn
b) E-MOSFET knh P G RD + EG <0 + UGS
ID UDS S RD + ED
Trang 63
ED
c tuyn ra ca E-MOSFET knh N

Vng Ohmic D G UGS>UT>0 S
12 IDbh 10 8 6 4 2 2 UP 4 6 8 10 12 UDS (V) ID (mA) A UGS>UT Vng nh thng (Avalanche Region) B
n+ - - - - - n+
- - - Lp o Lp chuyn tip
---------
Vng bo ho (Pinchoff Region)
Substrate (p)
(a) D
B G UGS>UT>0 S
---------
G UGS>UT>0 S n+ -- - - - - n+
Substrate (p) ------
G UGS>UT>0 S
---n+ + - - - - n+
- - -
n+ - - - - - n+
- - -
- -
- -
Substrate (p)
Substrate (p)
UDS<Up
(b)
UDS=Up
(c)
UDS>Up
B
Trang 64
(d)
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Cc h c tuyn ca E-MOSFET knh N

H c tuyn truyn t H c tuyn ra
Khi UGS<UT - in p ngng, knh b kho hon ton (cha hnh thnh knh cm ng): ID= IDbh=0. Khi UT<UGS = const, nu UDS >Up th ID =IDbh=const Biu thc tnh ID theo UGS ti vng bo ho thng c tnh nh sau:
I D = k .(U GS U T ) 2
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k: hng s knh. k =
W n C ox 2.L
W, L rng v chiu di ca G
Trang 65
Cc h c tuyn ca E-MOSFET knh P
-UDS
Khi UGS>UT - in p ngng, knh b kho hon ton (cha hnh thnh knh cm ng): ID= IDbh=0. Khi UGS<UT<0, nu -UDS >Up th ID =IDbh=const Biu thc tnh ID theo UGS ti vng bo ho thng c tnh nh sau:
I D = k .(U GS U T )
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k =
W p C ox 2.L
Cox: in dung ca MOS

Trang 66
Bng so snh c tuyn truyn t ca cc cu kin FET
IDSS UGS0
I D = I DSS U (1 GS ) 2 U GS 0
I D = I DSS
IDSS UGS0
U (1 GS ) 2 U GS 0
ID = k.(UGS UT )
k= I D ( on )
(U GS ( on ) U T ) 2
UGS0 UGS0/2
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UGS0
UT
Trang 67
4.4 nh thin (Phn cc) cho MOSFET

MOSFET lm vic ch xung, s thng c phn p chng lm vic vng c tuyn kho hon ton v vng ohmic hoc gn bo ho. Khi MOSFET lm vic ch tch cc (ch khuch i tn hiu) th chng c nh thin lm vic vng c tuyn bo ho. Trong phn ny ch yu tnh ton mch nh thin MOSFET lm vic ch tch cc. Khi tnh ton mch nh thin s dng cc gi thit sau: IG=0, Khi UGS=const, dng ID=IDSbh=const mc d UDS thay i. Cc cch nh thin cho D-MOSFET: + A1/ T nh thin + A2/ nh thin bng mch phn p + A3/ nh thin cc cng Cc cch nh thin cho E-MOSFET + B1/ nh thin bng mch hi tip + B2/ nh thin bng mch phn p
A1. Mch t nh thin D-MOSFET

ED RD
IDSS=8mA UGS0=-8V
RG
RS
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Trang 69
Xc nh im lm vic Q
UGS0
A2. nh thin bng mch phn p cho D-MOSFET
R1
RD
IDSS=6mA UGS0=-3V
R2
RS
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im lm vic Q
UGS0
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Trang 72
A3. nh thin cc G c nh
EG = 2V RD
IDSS=10mA UGS0=-4V
EG
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Trang 73
B1. nh thin cho E-MOSFET bng mch hi tip
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Trang 74
S 1 chiu tng ng
IG = 0
UGS = UDS
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Trang 75
c tuyn truyn t
UT
Xc nh im lm vic Q
UT
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Trang 77
V d
UT=UGSTH = 4V UGSon = 7.5V IDon = 5mA UDD = 22V
IDon k= (VGSon - VGSTH)2 ID = k(VGS - VGSTH)2
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Trang 78
B2. nh thin cho E-MOSFET knh N dng mch phn p (1)
R2 VG = VDD R1 +R2 IDon k= (VGSon - VGSTH)2 ID = k(VGS - VGSTH)2
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Trang 79
R2 VG = VDD R1 +R2 KVL Input -VG + VGS + IDRS = 0 IDon k= (VGSon - VGSTH)2 ID = k(VGS - VGSTH)2
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Trang 81
4.5 M hnh tng ng ca MOSFET a/ M hnh tng ng mt chiu v tn hiu ln b/ M hnh tng ng tn hiu nh Xt trng hp cc S v B ni tt
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Trang 82
a/ M hnh tng ng 1 chiu v tn hiu ln ca D-MOSFET

D G
UGS +
2
D G
+ + UGS RGS K.IDSS UDS +
S S + M hnh tng ng D-MOSFET lm vic vng bo ho

K.IDSS UDS -
RGS
U K = 1 GS U GS 0 + M hnh tng ng D-MOSFET lm vic vng ohmic

UGS +
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U K = 1 GS U GS 0
+ UGS Trang 83
RGS RDS UDS +
I Dbh
a/ M hnh tng ng 1 chiu v tn hiu ln ca E-MOSFET

D G
+ UGS RGS ID + UDS UGS + RGS .ID
D G
UDS +
S S + M hnh tng ng E-MOSFET lm vic vng bo ho
ID = k.(UGS UT )2
+ M hnh tng ng E-MOSFET lm vic vng ohmic
+ UGS
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UGS +
Trang 84
RGS RDS UDS +
I Dbh
b/ M hnh tng ng tn hiu nh tn thp

M hnh tng ng tn hiu nh ca MOSFET xc nh mi quan h gia tn hiu xoay chiu bin nh trong JFET: id, ugs. Cc phng trnh c tnh tng ng xc nh cc m hnh tng ng ca MOSFET: Tng qut :
i D = f ( u GS , u DS ) = I D + i d = f (U GS + u gs , U DS + u ds )
Gi s im lm vic Q(UGS,UDS,ID)
f f id = u gs + uds = g mu gs + g d uds uGS Q u DS Q

gm - h dn vo, gd - h dn ra
M hnh tng ng tn hiu nh tn thp ca D-MOSFET (1)

+ Ta c
uGS iD = f (uGS ) = I DSS 1 u GS 0

f u GS
gm0 =
+ h dn vo:
gm =
Q =
2 I DSS U GS 0
U 1 GS U GS 0
gm
2 I DS . I DSS = U GS 0

2 I DSS U GS 0
U = g m 0 1 GS U GS 0
+ Thc t th IDbh cng s thay i theo UDS mc d s thay i ny l khng ng k. Phng trnh tnh dng ID c hiu chnh c tnh n nh hng ca in p UDS nh sau:
u 1 GS i D = f (u GS , u DS ) = I DSS U GS 0
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u 1 + DS V An
VAn - in p Early (30 300V)

Trang 86
M hnh tng ng tn hiu nh tn thp ca D-MOSFET (2)

+ h dn ra :
gd = i DS u DS = I DSS
Q
u 1 GS U GS 0
=
Q
I 1 = D V An V An
+ in tr vi phn u ra: ri = rd = u DS iD
D G G S D
gm0 =
1 VAn = gd ID
D S
+ M hnh tng ng tn hiu nh tn thp ca D-MOSFET

2 I DSS U GS 0

G G D
gm.ugs
S
rd
U g m = g m 0 1 GS U GS 0
gm.ugs
S
rd
2I DSS UGS 2 I DS.I DSS 1 gm = U = U UGS0 GS0 GS0

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Trang 87
M hnh tng ng tn hiu nh tn thp ca E-MOSFET (1)

+ M ta c
iD = f (uGS ) = k (uGS U T )
+ h dn vo:
f 2.ID gm = U Q =2.k.( GS UT ) = uGS (UGS UT )
+ Thc t th IDbh cng s thay i theo UDS mc d s thay i ny l khng ng k. Phng trnh tnh dng ID c hiu chnh c tnh n nh hng ca in p UDS nh sau:
iD = f (uGS ) = k (uGS U T ) (1 + .u DS )
2
i DS g = + h dn ra : d u DS
= k (U GS U T
Q
)2 .
= I D .
: H s iu ch chiu di knh
Trang 88
+ in tr vi phn u ra:
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ri = rd =
u DS iD
=
Q
1 1 = gd .I D
M hnh tng ng tn hiu nh tn thp ca E-MOSFET (2)

+ M hnh tng ng tn hiu nh tn thp ca E-MOSFET
D G S G D G G S D D
gm.ugs
S
rd
gm.ugs
rd
f 2.ID gm = Q= uGS (UGS UT )

rd = 1 1 = gd .I D
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Trang 89
4.6 Cu trc CMOS

G B p+ S n+ D n+ G B S p+ D PEMOS p+
+VDD
xj
xj
n+
n-type well NMOS p-type substrate PMOS
UG
UD
NEMOS
B o CMOS
Cng ngh CMOS- Complementary MOS: Hai MOSFET b nhau NMOS (MOSFET knh N) v PMOS (MOSFET knh P) c ch to ng thi trn mt bn dn duy nht Gia PMOS v NMOS c cch ly vi nhau bi chuyn tip PN phn cc ngc Cng ngh CMOS hin l cng ngh ph bin trong cc vi mch s
BI GING MN
CHNG 7. Thyristor
1. 2. 3. 4. Hin tng tr it Shockley DIAC Cu kin chnh lu c iu khin Silic - SCR (SiliconControlled Rectifier) 5. TRIAC 6. Transistor n ni UJT (Unijunction Transistor)
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BI GING MN
Hin tng tr
Thyristor thuc lp cu kin bn dn c tr. Do c tnh tr m mt h thng s khng tr v trng thi ban u sau khi nguyn nhn gy ra s thay i trng thi khng cn na Thyristor l cu kin bn dn c xu hng trng thi m mi khi c bt, v c xu hng trng thi tt mi khi c tt. Mt s kin nht thi c th lt thyristor sang trng thi m hoc trng thi tt v n s t duy tr trng thi thm ch sau khi nguyn nhn gy ra s thay i trng thi khng cn na Do Thyristor c s dng nh mt cu kin chuyn mch bt/tt v n khng th c s dng nh l mt b khuch i tn hiu tng t
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BI GING MN
it Shockley (1)
Khi u cho vic ch to ra thyristor bt ngun t mt cu kin c tn l it 4 lp, cn gi l PNPN it, hay it Shockley Mt it Shockley bao gm 2 transistor lng cc, mt transistor PNP v mt transistor NPN mc vi nhau nh hnh v 7.1
Ant Ant
Catt
Catt
S vt l
S tng ng
K hiu
Hnh 7.1 - it Shockley: S vt l, S tng ng, K hiu

BI GING MN
it Shockley (2)
Nguyn l hot ng: Cp ngun cho mch tng ng ca it Shockley nh h/v Khi khng c in p ca ngun cung cp khng c dng in Khi U bt u tng ln th vn s khng c dng in bi v khng c transistor no ch dn (m): c hai transistor s u ch ngt
Dng cc gc chy qua transistor pha di c iu khin bi transistor pha trn, v dng cc gc chy qua transistor pha trn c iu khin bi transistor pha di. Ni cch khc chng transistor no c th dn in cho n khi transistor kia dn (hnh 7.2)
Hnh 7.2
Trang 4
BI GING MN
it Shockley (3)
Vy lm th no m mt it Shockley c th dn in ? Nu hai transistor tht c ni theo kiu to ra mt it Shockley th mi transistor s dn khi c mt in p ln gia ant v catt khin mt trong s chng thot ra khi trng thi ngt Mi khi mt transistor thot ra khi trng thi ngt v bt u dn, n s cho php dng cc gc chy qua transistor cn li lm cho transistor ny dn in theo cch thng thng, v sau cho php dng cc gc chy qua transistor u tin. Cui cng th c hai transistor s u bo ho v s gi cho nhau trng thi dn (on) thay v trng thi ngt (off). Nhng lm cch no hai transistor li tr li trng thi ngt? Gim U cung cp ti mt gi tr rt nh sao cho ch c dng in rt nh chy qua cc cc ca transistor mt trong hai transistor s ngt, dn n vic lm ngng dng cc gc chy qua transistor kia, khin cho c hai transistor u ri vo trng thi ngt
BI GING MN
it Shockley (4)
c tuyn Vm/Ampe l ng tr kinh in, khi tn hiu in p u vo tng ln v gim xung, dng in u ra khng i theo cng mt con ng i xung ging nh khi n i ln it Shockley c xu hng duy tr trng thi dn (on) mt khi n dn in, v trng thi tt mt khi n ngt in. Khng c ch gia hay tch cc trong hot ng ca n: n ch thun tu l cu kin bt (on) hoc tt (off), ging nh tt c cc Thyristor.
Dng trong mch
Hnh 7.3 ng cong tr

in p cung cp Trang 6
BI GING MN
DIAC (1)
DIAC: hai it Shockley c th c mc song song vi nhau theo 2 hng ngc nhau. Diac c th c hot ng song hng (AC)
Mch tng ng ca DIAC Hnh 7.4 DIAC
K hiu ca DIAC
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BI GING MN
DIAC (2)
Nguyn l hot ng: Khi cp mt in p mt chiu vo hai u ca DIAC th n hot ng ging ht nh mt it Shockley. Tuy nhin, khi cp mt in p xoay chiu (AC) vo hai u ca DIAC th n hot ng hon ton khc. Do dng in lin tc o chiu, cc DIAC s khng duy tr trng thi cht lu hn mt na chu k. Nu mt DIAC bt u cht, n s ch tip tc dn dng chng no in p ln a dng in theo hng . Khi in p AC o chiu, DIAC s ngt do khng dng in v n cn phi c mt in p ln (breakover voltage) khc khin n dn tr li. Hnh 7.4 m t dng sng ca DIAC
BI GING MN
DIAC (2)
in p khin DIAC dn
Hnh 7.6 c tuyn Vn Ampe ca mt DIAC song hng

Dng Ant: +IA
Dng DIAC in p ngun cung cp
in p khin DIAC dn
Hnh 7.5 Cc dng sng ca DIAC
Cc DIAC khng bao gi c s dng mt mnh, m thng c s dng kt hp vi cc cu kin Thyristor khc.
in p nh thng, thng thng 2040V
Dng in khin DIAC dn, thng thng 50200 A
Dng in nh thng, thng thng 50200 A in p khin DIAC dn, thng thng 20-40V
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BI GING MN
SCR: Silicon-Controlled Rectifier (1)

Cu to: qu trnh bin it Shockley thnh SCR ch cn thm mt si dy th 3 ni vo cu trc PNPN nh m t hnh v 7.7
Ant Ant Ant Cc ca Catt Cc ca Catt Cc ca
Catt
S vt l
S tng ng
K hiu
Hnh 7.7 Cu kin chnh lu c iu khin Silic (SCR)

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BI GING MN

Nguyn l hot ng Nu cc cng G ca mt SCR h (khng ni) th n hot ng ging nh mt it Shockley. Do cc cng G ni trc tip vi cc gc ca transistor pha di, n c th c s dng nh mt phng tin thay th cht SCR Cung cp mt U nh gia cc cng v catt, transistor pha di s buc phi dn do c dng cc gc ln, ko theo transistor pha trn cng dn, v n li cung cp dng in cho cc gc ca transistor pha di. Kt qu l sau SCR khng cn cn c kch hot bi mt in p cng na Tt nhin, dng cc cng cn thit khi ng vic cht s nh hn rt nhiu so vi dng in chy qua SCR t catt n ant, do SCR s c kh nng khuch i
SCR (2)
BI GING MN
SCR (3)
Phng php buc SCR dn in c gi l kch hot (triggering) v trong thc t n l cch thng thng nht SCR c cht. tt mt SCR, dng ant phi gim xung di dng gi (holding current). Trong cc mch mt chiu (DC) mt s ph kin thm vo phi c s dng m bo iu ny. Trong cc mch xoay chiu (AC) mt SCR s tt khi in p cung cp (in p ant) i qua im 0 hng ti cc gi tr m.
(Dng gi) (in p nh thng ngc) (trng thi dn)
(trng thi tt)
Hnh 7.8 c tuyn V- A ca mt SCR

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(trng thi chn ngc) in p dn
in p khin mt transistor chuyn sang trng thi dn
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BI GING MN
GTO (Gate-Turn-Off Thyristor : Thyristor cng tt)

Cu to: Cc SCR v GTO c cng s tng ng (gm hai transistor ni theo kiu hi tip dng), iu khc bit duy nht l cu trc c thit k cho php mt transistor NPN c h s ln hn h s ca transistor PNP. iu ny cho php mt I cc cng nh hn (thun hoc ngc) to ra mt mc iu khin ln hn p dng cho vic dn t catt sang ant, vi trng thi cht ca transistor PNP tr nn ph thuc nhiu hn vo trng thi cht ca NPN v ngc li. Ant
GTO cn c gi l chuyn mch c iu khin bng cng- Gate-Controlled Switch ( GCS)
Cc ca Catt
Hnh 7.9 GTO

BI GING MN
TRIAC
SCR l cu kin n hng (mt chiu), do n ch hu ch cho vic iu khin mt chiu (DC). Nu hai SCR c ni vi nhau theo kiu song song nh hnh v 8.34 th ta c mt cu kin mi gi l TRIAC
Hnh 7.10 - Mch tng ng ca Triac (a) v k hiu ca Triac (b)

BI GING MN
c tuyn Vn Ampe ca mt Triac

in p ri (vT) ti dng c nh r (iT) Dng cht (IL) Dng r trng thi tt (IDRM) ti in p nh r VDRM
Dng gi nh nht (IH)
in p chn trng thi tt (VDRM) nh nht c nh r in p khin TRIAC dn
Hnh 7.11 - c tuyn Vn Ampe ca mt Triac

BI GING MN
TRANSISTOR N NI (UJT)
Cu to: gm mt thanh bn dn Silic loi N c mt u ni loi P chnh gia. Cc u ni ti hai u cui ca thanh bn dn c gi l cc cc ca B1 v B2; im ni gia loi P l cc pht (emitter). Khi cc pht h, in tr ton phn l RBB0 (mt thng s trong bn thng s (data sheet) ca linh kin) bng tng ca hai in tr RB1 v RB2.
Hnh 7.12 - Transistor n ni: (a) Cu to, (b) M hnh, (c) K hiu
BI GING MN

ng cong c tuyn gia dng cc pht n ni v in p c m t nh sau: khi VE tng, dng IE tng n IP (im nh peak point). Sau khi tng n im nh (IP), trong vng in tr m (negative reisistance region) dng IE tng tip mc d in p gim. in p t gi tr nh nht ti im y (valley point). in tr ca RB1, in tr bo ho l nh nht ti im y
im nh
Tr khng m Bo ha
im y
Hnh 7.13 - Transistor n ni: (a) ng cong c tuyn pht, (b) M hnh cho VP
BI GING MN
ng dng ca UJT:
Dng ch to b to dao ng hi phc (relaxation). in p ngun cung cp VBB s np in cho CE qua RE cho n im nh (peak point). Cc pht n ni khng c tc ng g n t in cho n khi im nh c t ti. Mi khi in p ca t (VE) t ti im in p nh VP, in tr cc pht -cc ca1 (E-B1) b nh i s khin t phng mt cch nhanh chng. Mi khi t phng in n di im y VV, in tr E-B1 quay tr li thnh in tr cao, v t in li c np
Trong khi t phng in qua in tr bo ho E-B1, mt xung c th xut hin trn cc in tr ti ngoi B1 v B2 (Hnh v 7.14). in tr ti ti B1 cn phi nh khng nh hng n thi gian phng in. in tr ngoi ti B2 l tu chn. N c th c thay th bi mt ngn mch. Tn s xp x c cho bi 1/f = T = RC
BI GING MN

in tr np RE phi gim i trong cc gii hn nht nh. N buc phi nh cho php dng IP chy da trn vic ngun cung cp VBB nh hn VP. N cng buc phi ln cung cp dng IV da trn vic ngun cung cp VBB nh hn VV.
Hnh 7.14 - B to dao ng hi phc (relaxation oscillator) dng UJT v cc dng sng. B to dao ng iu khin SCR
BI GING MN
CHNG 8 CU KIN QUANG IN T

1. GII THIU 2. CC CU KIN BIN I IN QUANG 2.1 it pht quang (LED) 2.2 Laser bn dn 2.3 Mt ch th tinh th lng (LCD) 3. CC CU KIN CHUYN I QUANG IN 3.1 in tr quang 3.2 it quang 3.3 Transistor quang lng cc 4. CC B GHP QUANG (OPTO- COUPLERS)
BI GING MN
Gii thiu chung (1)

1. Khi nim chung v k thut quang in t a. nh ngha v k thut quang in t: Quang in t l nhng hiu ng tng h gia bc x nh sng v mch in t. Bc x nh sng l mt dng ca bc x in t c di tn s dao ng rt cao ( = 50nm 100m) Cc bc x quang c chia ra thnh ba vng: Vng cc tm c = 50nm 380nm. Vng nh sng nhn thy c = 380nm 780nm. Vng hng ngoi c = 780nm 100m.
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BI GING MN
Gii thiu chung (2)

b. Phn loi linh kin quang in t:
Linh kin quang in t gm c linh kin bn dn quang in t v linh kin khng bn dn quang in t Linh kin bn dn quang in t: l nhng linh kin c ch to t vt liu bn dn nh in tr quang, it quang, tranzito quang, LED, LASER bn dn,v.v.. Linh kin khng phi bn dn quang in t: nh si quang dn, mt ch th tinh th lng LCD, ng nhn quang v.v..
BI GING MN
Gii thiu chung (3)

2. H thng truyn dn quang S khi ca cc h thng thng tin:
Ngun tn hiu Mch in t Khi iu ch Si ng Khi gii iu ch Tn hiu Mch thu in t
a. H thng thng tin in Ngun tn hiu Mch in t Tn hiu thu
Khi E/ O Si quang b. H thng thng tin quang
Khi O/ E
Mch in t
Hnh 8-1: a. H thng thng tin in . b. H thng thng tin quang.
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BI GING MN
Gii thiu chung (4)

u im ca h thng truyn dn quang:
Si quang nh, nh hn dy kim loi, d un cong, tn t vt liu Si quang ch to t thu tinh thch anh khng b nh hng ca nc, axit, kim nn khng b n mn. ng thi, si l cht in mi nn cch in hon ton, tn hiu truyn trong si quang khng b nh hng ca nhiu bn ngoi ti v cng khng gy nhiu ra mi trng xung quanh m bo b mt thng tin, khng s b nghe trm Kh nng truyn c rt nhiu knh trong mt si quang c ng knh rt nh. Tiu hao nh v khng ph thuc tn s nn cho php truyn dn bng rng v tc truyn ln hn nhiu so vi si kim loi Gi thnh rt r
BI GING MN
Cc cu kin bin i in Quang (Cu kin pht quang)

S tng tc gia nh sng v vt cht S tng tc gia nh sng v vt cht gm c 3 qu trnh: qu trnh hp th, qu trnh pht x t pht v qu trnh pht x kch thch
a. Qu trnh hp th
b. Qu trnh pht x t pht c. Qu trnh pht x kch thch
hf = Ei Ek
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Ei: Mc nng lng kch thch

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Hnh 8- 2: Ba qu trnh ch yu ca s tng tc gia nh sng v vt cht

BI GING MN
S tng tc gia nh sng v vt cht

Qu trnh hp th: qu trnh m ti khi c mt photon tng tc vi vt cht th mt in t mc nng lng c bn Ek s nhn thm nng lng ca photon (quang nng) v nhy ln mc nng lng kch thch Ei Qu trnh pht x t pht: qu trnh m cc in t nhy ln mc nng lng kch thch Ei, nhng chng nhanh chng tr v mc nng lng c bn Ek v pht ra photon c nng lng h. Mi mt pht x t pht ta thu c mt photon. Hin tng ny xy ra khng c s kch thch bn ngoi no gi l qu trnh pht x t pht. Pht x ny ng hng v c pha ngu nhin Qu trnh pht x kch thch: Nu c mt photon c nng lng h ti tng tc vi vt cht m trong lc c mt in t ang cn trng thi kch thch Ei, th in t ny c kch thch v ngay lp tc n di chuyn tr v mc nng lng c bn Ek v pht x ra mt photon khc c nng lng cng ng bng. Photon mi pht x ra ny c cng pha vi photon i n v c gi l pht x kch thch (hay pht x cm ng)
BI GING MN
it pht quang (LED) ch th (1)

it pht quang l linh kin bn dn quang in t. N c kh nng pht ra nh sng khi c hin tng ti hp xy ra trong tip xc P-N. Tu theo vt liu ch to m ta c nh sng bc x ra cc vng bc sng khc nhau Trong mc ny ta s trnh by trc ht v LED bc x ra nh sng nhn thy gi l LED ch th. LED ch th c u im l tn s hot ng cao, kch thc nh, cng sut tiu hao nh, khng st p khi bt u lm vic. LED khng cn knh lc m vn cho ra mu sc. LED ch th rt r khi tri ti. Tui th ca LED khong 100 ngn gi
BI GING MN
LED ch th (2)
a. Cu to v k hiu ca LED:
A Tip xc P-N P N K
Hnh 8- 3 : M hnh cu to v k hiu ca LED.
Vt liu ch to it pht quang u l cc lin kt ca cc nguyn t thuc nhm 3 & nhm 5 ca bng tun hon Menlep nh GaAs, hoc lin kt 3 nguyn t nh GaAsP v.v.. y l cc vt liu ti hp trc tip, c ngha l s ti hp xy ra gia cc in t st y di dn v cc l trng st nh di ha tr.
BI GING MN

Cc cu trc ca LED
Light output n Light output p type epitaxial layer n type substrate ohmic contacts
Dome LED
ohmic contacts diffused p-type
Planar LED
LED vm v LED phng c s dng trong phn ln cc thit b hin th vi li ch l rt c lng nh sng cc i t thit b => nh sng c pht ra theo tt c cc hng v s dng cc ng knh c sp xp theo trt t nht nh hi t nh sng. Burrus LED v LED pht x cnh ch yu c dng trong cc h thng thng tin si quang
BI GING MN

Burrus LED
Metal tab 250 m Multimode optical fiber Epoxy resin ~ 250 m 50 m
Etched well 50m SiO2
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SiO2 Edge-emitting p+-AlGaAs LED p-AlGaAs Gold stud AlGaAs (Active layer) n-AlGaAs Metal contact Primary lightn-GaAs ~ 50 m emitting region Cc lp gii hn ht dn : p-AlGaAs and n-AlGaAs GING VIN: ThS. Trn Thc Linh
B MN: K thut in t - KHOA KTT1
n-AlGaAs p-GaAs p-AlGaAs p+-GaAs
n-GaAs substrate Metal contact
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BI GING MN
LED ch th (3)
b. Nguyn l lm vic:
+ LED U R _
Hnh 8- 4 : S nguyn l ca LED
Khi LED phn cc thun, cc ht dn a s khuch tn t qua tip xc P-N, chng gp nhau s ti hp v cc photon c pht sinh. Tc ti hp trong qu trnh bc x t pht ny t l vi nng in t trong phn bn dn P v nng l trng trong phn bn dn N. y l cc ht dn thiu s trong cht bn dn. Nh vy, tng s photon bc x ra cn phi gia tng nng ht dn thiu s trong cc phn bn dn. Cng dng in ca it t l vi nng ht dn c "chch" vo cc phn bn dn, do cng pht quang ca LED t l vi cng dng in qua it
BI GING MN
LED ch th (4)
in p phn cc cho LED gn bng rng vng cm ca vt liu cc LED bc x cc bc sng khc nhau s c ch to t cc vt liu bn dn c rng vng cm khc nhau v in p phn cc cho chng cng khc nhau Tuy nhin LED c in p phn cc thun tng i cao (1,6V 3V) v c in p ngc cho php tng i thp (3V 5V) c tuyn Vn - Ampe ca LED: c tuyn Vn - Ampe ca it pht quang biu din mi quan h gia I dng in quang vi in p t ln LED.
Ungc max 0 UD UAK
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GING VIN: ThS. Trn Thc Linh Hnh 8- 5: c tuyn Vn B MN: K thut in t - KHOA KTT1 - Ampe ca LED
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BI GING MN
LED ch th (5)
Mt s loi LED ch th: LED n: linh kin mt LED LED i: dng cho nhng ng dng c bit
1 3 2 Xanh/Vng LED1 LED2
Hnh 8- 6 : LED i
A a f g e d c b
Hnh 8- 7: Cu trc ca mt LED 7 on sng u kiu Ant chung
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BI GING MN
LED hng ngoi (1)

Cc h thng thng tin quang yu cu tc bit xp x 100 n 200Mbit/s cng si quang a mt vi cng sut quang khong vi chc W th cc it pht quang bn dn thng l cc ngun sng tt nht Cu to: Cu to ca LED hng ngoi c bn l ging cc LED ch th. bc x nh sng hng ngoi, LED hng ngoi c ch to t vt liu Galium Asenit (GaAs) vi rng vng cm EG = 1,43 eV tng ng vi bc x bc sng khong 900nm. Hnh 8- 8 m t cu trc ca mt LED hng ngoi bc x nh sng 950nm. nh sng pht ra Trong phn epitaxy lng trong sut GaAs
Chn cc = 950nm GaAs (P) GaAsSi (N) (N) GaAsSi GaAs (N) trong sut Chn cc Mt mi nhn Hnh 8- 8 : Cu trc ca LED hng ngoi bc x =950nm Tip xc P-N
(N) to mt lp tinh th c tnh cht lng tnh vi tp cht Silic l GaAsSi (N) v mt tip xc P-N c hnh thnh. Vi s pha tp cht Silic ta c bc x vi bc sng 950nm. Mt di ca LED c mi nhn to thnh mt gng phn chiu tia hng ngoi pht ra t lp tip xc P-N
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BI GING MN
LED hng ngoi (2)

Nguyn l lm vic v c im:
Khi phn cc thun cho it, cc ht dn a s s khuch tn qua tip xc PN, chng ti hp vi nhau v pht ra bc x hng ngoi. Cc tia hng ngoi bc x ra theo nhiu hng khc nhau. Nhng tia hng ngoi c hng i vo trong cc lp cht bn dn, gp gng phn chiu s c phn x tr li i ra ngoi theo cng hng vi cc tia khc tng hiu sut ca LED nh sng hng ngoi c c tnh quang hc ging nh nh sng nhn thy, ngha l n c kh nng hi t, phn k qua thu knh, c tiu c.... Tuy nhin, nh sng hng ngoi rt khc nh sng nhn thy kh nng xuyn sut qua vt cht, trong c cht bn dn. iu ny gii thch ti sao LED hng ngoi c hiu sut cao hn LED ch th v tia hng ngoi khng b yu i khi vt qua cc lp bn dn ra ngoi Tui th ca LED hng ngoi di n 100.000 gi. LED hng ngoi khng pht ra nh sng nhn thy nn rt c li trong cc thit b kim sot v khng gy s ch
BI GING MN
Mt s hnh nh ca LED
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BI GING MN
Mt ch th tinh th lng - LCD (1)

Khi nim:
Tinh th lng s dng trong LCD l nhng hp cht hu c c bit. Cc phn t ca tinh th lng ny c phn b sao cho cc trc dc ca chng nm song song vi nhau. nhit thp LCD trng thi rn, khi t0 tng ln n nhit nng chy th LCD chuyn sang trng thi lng. Pha trung gian gia hai trng thi ny l trng thi tinh th lng LCD khng phi l linh kin bn dn quang in t. LCD c ch to di dng thanh v chm - ma trn. LCD l cu kin th ng, n khng pht sng nn cng d c nu xung quanh cng sng LCD: dng lm mt ch th cho ng h, my tnh con, cc thit b o s, chi tr em, mn hnh ti vi.
BI GING MN
LCD (2)
c im: Khong nhit s dng: (- 100C + 600C) in p: 3V 6V (chun l 4,5V) Tn s: 30 Hz 200 Hz Thi gian ng: 40 ms Thi gian ngt: 80 ms Dng in tiu hao khong 0,2 A LCD c tui th kh cao t 10.000 n 100.000 gi v ngy nay n thay th dn cc mt ch th loi LED hay hunh quang
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BI GING MN
LCD (3)
Cu to ca thanh LCD:
o o o Gm c 2 tm knh t cch nhau khong 10m. Mt pha trong ca 2 tm knh trng mt lp oxit km (ZnO) trong sut lm hai in cc. Xung quanh bn cnh hai tm knh c hn kn, sau tinh th lng vo khong gia 2 tm knh v gn kn li. Hai tm nha c tnh phn cc nh sng c dn bn ngoi hai tm knh sao cho hnh nh phn chiu ca mt ch th c nhn t mt pha nh gng phn chiu. Tm nha phn cc th 2 Gng phn chiu
Knh in cc trong sut Knh Tm nha phn cc th 1 Keo Tinh th lng
Hnh 8-9 : Cu to ca mt thanh LCD
nh sng chiu vo Mt ngi quan st
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BI GING MN
Laser bn dn (1)
Relative optical power
Laser = Light Amplification by Stimulated Emission of Radiation c im: - Ph pht sng hp - Kch thc nh - n nh cao - C bc sng nh sng trong cc ca s quang 1, 2, 3 - iu ch trc tip c th ln n vi Gb/s - Bn knh bc x nh (ghp vi si quang)
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Diode Laser LED
< 3 nm ~ 75 nm
Wavelength (nm)
Hnh 8-10
Trang 21
BI GING MN
Laser bn dn (2)
Light output (mW) 7 Slope gives external efficiency T Lasing emission
Ith
Dng in (mA) Hnh 8-11
40
Bc x kch thch
- Gim dng in ngng - Tng cng sut tng ca nh sng u ra - Tng hiu sut quantum m rng
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ci thin cht lng ca thit b laser

Trang 22
BI GING MN
Cu trc ca laser
Kt ni in
Cc loi laser: Laser a mode: Fabry-Perot Laser Laser n mode: dng trong cc h thng thng tin tin tin - DFB Laser (Distributed Feedback) - DBR Laser (Distributed Bragg Reflector) - MQW Laser (Multi Quantum Well) Laser c th iu chnh c: iu chnh bc sng pht ra bng cch (i) thay i chiu di h (ko dn c hc), (ii) thay i h s khc x (iu khin nhit )
Hnh 8-12 Laser vi cu trc d th kp a) Index-Guided b) Gain-Guided
Trang 23
BI GING MN
Cc cu kin chuyn i Quang in

Cc b thu quang in hot ng da trn nguyn l hiu ng chuyn i quang in. s hp th photon bi vt liu bn dn to ra cc cp in t - l trng to ra tn hiu quang in di dng dng in hay in th c th o c Thit b quan trng nht l it quang bn dn (photodiode) Yu cu: - nhy cao - Nhiu trong nh - Bng thng rng
BI GING MN
Quang tr (LDR-Light Dependent Resistor) (1)

Cu to & nguyn l: L b thu tn hiu quang n gin nht. Quang tr thng c lm bng cht Sunfit Cadimium (CdS), Selenid Cadimium (CdSe), Sunfit ch (PbS) trong loi quang tr CdS c nhy ph gn vi mt ngi nn thng dng nht Quang tr c ch to bng cch to mt mn bn dn trn nn cch in ni ra 2 u kim loi ri t trong mt v nha, mt trn c lp thu tinh trong sut nhn nh sng bn ngoi tc ng vo
h
Bn in cc Dy dn ni t in cc ra ngoi
Bn dn cch in www.ptit.edu.vn Hnh 8-13 Trang 25
BI GING MN
Quang tr (2)
Khi nh sng chiu vo b mt quang tr, cc cp e-l trng c sinh ra v c in trng cun ra pha cc in cc. Ph thuc vo thng lng nh sng chiu vo, dng in bn ngoi cng thay i theo. Tr s in tr ca quang tr thay i theo sng chiu vo n. Khi b che ti th quang tr c tr s in tr rt ln (vi M), khi c chiu sng th in tr gim nh (vi chc vi trm ). u im ca quang tr: c khuch i trong, ngha l dng quang in thu c c s in t (hay l trng) ln hn s in t (hay l trng) do photon to ra
RCdS
Hnh 8.14. K hiu, hnh dng ca quang tr
Lux
Hnh 8.15. c tnh ca quang tr
ng dng: dng trong cc mch thu tn hiu quang, trong bo ng, ng ngt cc mch in, trong o c, iu khin v t ng ho
BI GING MN
Nguyn l ca it quang
Cung cp mt in p phn cc ngc ph hp cho mt tip gip P-N n gin to ra mt in trng tch cc cp e--l -V trng do nh sng to ra (do s hp thu nh sng trong cht bn dn) Tc p ng c xc nh bi in dung ca thit b b chi phi bi dy ca vng chuyn tip thit b din tch nh v cc vng tch cc c pha tp thp s c in dung nh, ngha l tc cao Nhiu: nhiu thp nu gim nh dng in r (ch yu l dng r b mt) bng cch dng cc vt liu c vng cm rng b mt
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n +V
Electric field
Distance (x) Hnh 8-16
Trang 27
BI GING MN
PIN Diode (Photodiode c lp bn dn thun)

Hnh 8-17
(a) M hnh b thu quang PIN. (b) p ng / bc sng i vi b thu quang InGaAs/InP
it PIN bao gm lp P, lp I v lp N. Lp I l lp bn dn thun c in tr rt cao khi it PIN c phn cc ngc, lp ngho c th lan ra rt rng trong lp I hng phn ln cc photon ri v hp th trong Trong lp I c in trng cun rt cao cun ht ti nhanh chng v 2 cc to nn dng quang in mch ngoi
BI GING MN
PIN Diode (2)

Hp th cc photon cp e-l trng dng in:
i ( t ) = R. p ( t ) R E ( t ) q R = R = p ng hc
2
= hiu sut lng t < 1(vd: 0,95%), q = in

tch e-; h = hng s Planck (6,63.10-34 J/Hz) Cu trc PIN c thi gian p ng rt nhanh v hiu sut lng t cao. Nhc im: dng ti v nhiu tng i ln, c bit l i vi cc bn dn c vng cm nh nh Ge
c tuyn ca PIN
Hnh 8-18
BI GING MN
APD
Min tng tc (min hp th nh sng) & min nhn ht ti l tch bit nhau Khi c nh sng chiu vo, cc ht ti i qua min hp th s c tng tc, chng va p mnh vo cc nguyn t ca bn dn gy nn s ion ho v to ra cc cp e - l trng mi. Qu trnh c lp i lp li nhiu ln hiu ng thc l tng dng quang in bn ngoi, tng khuch i (tng nhy ca APD) in p phn cc ngc cao (>100V) Photon to ra cc cp e-l trng cc cp e/l trng tng thm do hiu ng thc l M = khuch i thc l (vd: 100) q R APD l , R A P D = M .R , khuch i cao, nhng bng thng thng thp hn, nhiu nhiu trong hn so vi it PIN
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hc
Hnh 8.19 M hnh APD vi vng nhn v vng hp th tch bit GING VIN: ThS. Trn Thc Linh Trang 30 B MN: K thut in t - KHOA KTT1
BI GING MN
Cc c im ca it quang
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Trang 31
BI GING MN
Transistor quang (1)

Cu to v nguyn l: Transistor quang c cu trc 3 lp nh BJT thng thng nhng min cc gc h, c mt din tch thch hp tip nhn nh sng chiu vo qua ca s Khi Transistor quang ch hot ng th tip gip BC c phn cc ngc cn tip gip BE phn cc thun Khi nh sng chiu vo Transistor quang, cc ht ti c sinh ra v c khuch tn ti tip gip BC, tip gip ny s tch in t v l trng gp phn to nn dng quang in Tip gip BC c vai tr nh mt it quang, cc ht ti t pha tip gip thun BE c tim chch vo cc gc B. Dng quang in trong min B (dng r ICB) s tr thnh dng IB v c khuch i ln (+1) ln collector
BI GING MN

K hiu:
(a)
!NPN !NPN
(b)
Hnh 8.20 K hiu ca Transistor quang 2 cc (a) v Transistor quang 3 cc (b)
c im:
khuch i: 100 1000 ln v khuch i l khng tuyn tnh theo cng nh sng chiu vo mi ni gia cc C v B Tc lm vic chm do t in k sinh Ccb gy hiu ng Miller Tn s lm vic max vi trm KHz tng nhy ngi ta ch to loi Transistor lp theo kiu Darlington
BI GING MN

ng dng:
(a) +VCC
1m 1N1183
(b) D +VCC
1m 1N1183
(c) +VCC
D
!NPN
RY
R
!NPN
1k
!NPN
1k
RY
!NPN
!NPN
!PNP
Hnh 8.21
Mch in a) dng transistor quang lp Darlington vi transistor cng sut iu khin rle RY. Khi c chiu sng transistor quang dn lm transistor cng sut dn cp in cho rle
1m 1N1183
RY
BI GING MN

Mch in hnh (b) ly in p Vc ca transistor quang phn cc cho cc B ca transistor cng sut. Khi transistor quang c chiu sng s dn in v lm in p Vc gim, cc B transistor cng sut khng c phn cc nn ngng dn v rle khng c cp in. Mch in hnh (c) dng transistor loi PNP nn c nguyn l ngc li mch in hnh (b) khi quang transistor c chiu sng c dn in to st p trn in tr phn cc cho cc B ca transistor cng sut loi PNP lm transistor cng sut dn, cp in cho rle. Hin nay ngi ta cn ch to JFET quang v Thyristor quang
BI GING MN
Cc b ghp quang (Opto- Couplers) (1)

Mc ch: dng cch in gia cc mch c s khc bit ln v in p VD: mch t ng iu khin cng sut c in p cao (U = 200V380V, 660V hay 1000V); mch iu khin thng c in p thp nh cc mch logic, my tnh hay cc h thng phi tip xc vi con ngi Cu to: B ghp quang gm 2 thnh phn gi l s cp v th cp. Phn s cp l mt it loi GaAs pht ra tia hng ngoi, phn th cp l mt Transistor quang loi Silic. Khi c phn cc thun, it pht ra bc x hng ngoi chiu ln trn mch ca Transistor quang. Nguyn l: Phn s cp l LED hng ngoi bin i tn hiu in thnh tn hiu nh sng. Tn hiu nh sng ny s c phn th cp (Transistor quang) bin i li thnh tn hiu in
BI GING MN
Cc b ghp quang (2)

IF
1N1183 !NPN
IC
1N1183
!NPN
1 2 3
!NPN
6 5 4
Hnh 8.22 Nguyn l
Hnh 8.23. B ghp quang transistor
c im:
in p cch in gia s cp v th cp (vi trm vn hng ngn vn) B ghp quang c th lm vic vi IDC hoc IAC c tn s cao in tr cch in gia s cp v th cp c tr s rt ln (vi chc Mvi trm M) i vi IDC H s truyn t dng in (IC/IF): vi chc % vi trm % tu loi b ghp quang
1N1183
BI GING MN
Cc b ghp quang (3)

Cc loi b ghp quang:
a) B ghp quang Transistor:
Phn th cp: Transistor loi Si. i vi b ghp quang transistor c 4 chn th transistor khng c cc B, trng hp b ghp quang transistor c 6 chn th cc B c ni ra ngoi (hv). B ghp quang khng c cc B c u im l h s truyn t ln, nhng c nhc im l n nh nhit km. Nu ni gia cc B v E mt in tr th cc b ghp quang transistor ny lm vic kh n nh vi nhit nhng h s truyn t b gim i.
BI GING MN
Cc b ghp quang (4)

b) Transistor quang Darlington: c nguyn l nh b ghp quang vi transistor quang nhng vi h s truyn t ln hn vi trm ln nh tnh cht khuch i ca mch Darlington.
Nhc im: nh hng bi nhit rt ln nn gia chn B v E ca transistor sau thng c in tr n nh nhit.
NDAR1
1
1N1183
6 5
2 3
1k
Hnh 8.24 Transistor quang Darlington

BI GING MN
Cc b ghp quang (5)

c) B ghp quang vi Thyristor quang: Gm mt it quang v 2 transistor lp theo nguyn l ca SCR Khi c nh sng hng ngoi do LED s cp chiu vo it quang th s c dng in IB cp cho transistor NPN v khi transistor NPN dn th s iu khin transistor PNP dn in. Thyristor quang c dn in th s duy tr trng thi dn m khng cn kch lin tc s cp tng kh nng chng nhiu ngi ta ni gia chn G v K bng mt in tr t vi Kvi chc K A
Hnh 8.25 K hiu v cu trc bn dn tng ng ca 2 Thyristor quang 3
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1
2N1595
6 5 4
!PNP
1N1183
FD1 BP104S
!NPN
K
Trang 40
BI GING MN
Cc b ghp quang (6)

d) OPTO- Triac: c cu trc bn dn nh hnh v
T2 1
2N5444
6 5 4 G BP104S FD1 BP104S !NPN FD1 !PNP !NPN !PNP

1k 1k
Hnh 8.26 K hiu v cu trc bn dn tng ng ca Triac quang
1N1183
T1
BI GING MN
Cc b ghp quang (7)

ng dng: Cc loi b ghp quang c dng in s cp cho LED hng ngoi khong 10 mA i vi transistor quang khi thay i tr s dng in qua LED hng ngoi s cp s lm thay i dng in ra IC ca transistor quang th cp. Cc b ghp quang c th dng thay cho rle hay bin p xung giao tip vi ti thng c in p cao v dng in ln.
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Trang 42
BI GING MN
Cc b ghp quang (8)

Mch in hnh 8.27 l ng dng ca transistor quang iu khin ng ngt rle Transistor quang trong b ghp quang c ghp Darlington vi transistor cng sut bn ngoi Khi LED hng ngoi s cp c cp ngun 5V th transistor quang dn, iu khin transistor 390 1k cng sut dn cp in cho rle RY +5V in tr 390 gii hn dng qua LED hng ngoi khong 10mA
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+24V
1m 1N1183
RY
NDAR1
1N1183
Hnh 8.27
Trang 43
BI GING MN
Cc b ghp quang (9)

Mch in hnh 8.28 l ng dng ca OPTO- Triac ng ngt in cho ti dng ngun xoay chiu 220V in tr 1k gii hn dng qua LED hng ngoi khong 10mA. Khi LED s cp c cp ngun 12V th Triac quang s c kch v dn in to dng kch cho Triac cng sut. Khi Triac cng sut c kch s dn in nh mt cng tc ng in cho ti. 1k
Ti
U1 D30 2N5444
+12V
1N1183
~220V
Hnh 8.28
Trang 44
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